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Laser Annealing Of Gaas
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Book Synopsis Laser Annealing of GaAs by : F. H. Eisen
Download or read book Laser Annealing of GaAs written by F. H. Eisen and published by . This book was released on 1980 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt: Irradiations of appropriate energy densities from a pulsed ruby laser lambda = 0.69 microns, tp approx. 15 or 59 ns) or a pulsed electron beam (energy approx. 20 keV, t(p) approx. 100 ns) were found to anneal implanted amorphous layers in GaAs successfully without using an encapsulant. This was confirmed by backscattering/channeling and TEM measurements. Good electrical activation of high dose (greater than 10 to the 15th power sq. cm) implanted donor ions, with peak electron concentrations higher than 10 to the 19th power cc), was achieved after both pulsed ruby laser and pulsed electron beam irradiations. Low dose less than 10 to the 13th power sq. cm) donor ion implanted samples irradiated with ruby laser or electron beam pulses did not show any measurable electrical activity. Possible reasons for this apparent inactivity were explored but the exact reasons are not clear at present. Au-Ge/Pt ohmic contacts with specific contact resistance as low as 10 to the -7th power omega/sq.cm were fabricated on n-type GaAs by pulsed electron beam alloying. This value of the specific contact resistance is one of the lowest values reported so far. (Author).
Book Synopsis Laser Annealing of Ion Implanted Gallium Arsenide by : Robert S. Mason
Download or read book Laser Annealing of Ion Implanted Gallium Arsenide written by Robert S. Mason and published by . This book was released on 1978 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implanted GaAs, irradiated by a Q-switched ruby laser, is examined primarily by cathodoluminescence, as well as ellipsometry and electrical measurements, to evaluate the quality of laser anneal. Weak cathodoluminescence spectra from laser irradiated samples indicate far less radiative centers than in thermally annealed samples. Emitted radiation from existing centers is attenuated by the formation of a surface layer on GaAs during exposure to the ruby laser, resulting in spectra which is slightly weaker than spectra representative of the material's condition. This attenuating layer occurs in both virgin and implanted GaAs exposed to ruby laser radiation. Ion implanted Si, exposed to the same Q-switched ruby laser, is examined by Rutherford backscattering and indicates a return to crystallinity of the implant layer. (Author).
Book Synopsis Pulsed Laser Annealing and Characterization of GaAs Substrates by : Yanan F. Shieh
Download or read book Pulsed Laser Annealing and Characterization of GaAs Substrates written by Yanan F. Shieh and published by . This book was released on 1989 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Laser Annealing of Semiconductors by : J Poate
Download or read book Laser Annealing of Semiconductors written by J Poate and published by Elsevier. This book was released on 2012-12-02 with total page 577 pages. Available in PDF, EPUB and Kindle. Book excerpt: Laser Annealing of Semiconductors deals with the materials science of surfaces that have been subjected to ultrafast heating by intense laser or electron beams. This book is organized into 13 chapters that specifically tackle transient annealing of compound semiconductors. After briefly dealing with an overview of laser annealing, this book goes on discussing the concepts of solidification and crystallization pertinent to the field. These topics are followed by discussions on the main mechanisms of interaction of photon and electron beams with condensed matter; the calculation of thermophysical properties of crystalline materials; and high-speed crystal growth by laser annealing of ion-implanted silicon. The subsequent chapters describe the microstructural and topographical properties of annealed semiconductor layers and the epitaxy of ion-implanted silicon irradiated with a laser or electron beam single pulse. This text also explores the electronic and surface properties and the continuous-wave beam processing of semiconductors. The concluding chapters cover various reactions in metal-semiconductor systems, such as fast and laser-induced melting, solidification, mixing, and quenching. Laser-induced interactions in metal-semiconductor systems and the factors involved in control of the heat treatment process are also discussed in these chapters. Materials scientists and researchers and device engineers will find this book invaluable.
Book Synopsis Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity by : Bill W. Mullins (2LT, USAF.)
Download or read book Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity written by Bill W. Mullins (2LT, USAF.) and published by . This book was released on 1979 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Laser Annealing of Donor Implanted Gallium Arsenide by : J. A. Akintunde
Download or read book Laser Annealing of Donor Implanted Gallium Arsenide written by J. A. Akintunde and published by . This book was released on 1981 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Multipulse Laser Annealing of Selenium Implanted GaAs by : Ricardo Antonio Contreras (CAPT, USAF.)
Download or read book Multipulse Laser Annealing of Selenium Implanted GaAs written by Ricardo Antonio Contreras (CAPT, USAF.) and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Pulsed Laser Annealing of Ion Implanted Gallium Arsenide by : Arkady Michael Horak
Download or read book Pulsed Laser Annealing of Ion Implanted Gallium Arsenide written by Arkady Michael Horak and published by . This book was released on 1987 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Laser Annealing of Ion Implanted Gallium Arsenide by : Robert S. Mason (2LT, USAF.)
Download or read book Laser Annealing of Ion Implanted Gallium Arsenide written by Robert S. Mason (2LT, USAF.) and published by . This book was released on 1978 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis CW Laser Annealing and CW Laser Assisted Diffusion in Gallium Arsenide by : Yves Isaac Nissim
Download or read book CW Laser Annealing and CW Laser Assisted Diffusion in Gallium Arsenide written by Yves Isaac Nissim and published by . This book was released on 1981 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Multipulse Laser Annealing of Selenium Implanted GaAs by : Ricardo Antonio Contreras
Download or read book Multipulse Laser Annealing of Selenium Implanted GaAs written by Ricardo Antonio Contreras and published by . This book was released on 1980 with total page 89 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs implanted with 120 keV Se at a fluence of 10 to the 14th power ions/sq cm was laser annealed using .53 micrometers energy from a Q-switched, frequency doubled, Neodymium:YAG laser. The substrates were irradiated in air by either a single pulse or multipulse with an average energy density of 300 mj/sq cm per pulse. The pulse width (FWHM) was 15 ns. Optical reflectivity in the ultraviolet spectrum of 210 nm to 380 nm was used to evaluate the crystal-line structure. The relative crystalline damage versus depth profile was obtained and compared to that of an as-implanted sample. The depth profiling was accomplished using a chemical etch. Implanted samples annealed at 1, 2, 4, 8, and 12 pulses all showed a dramatic reduction of damage as compared to the as-implanted sample. However, the results of the two pulse anneal show the highest degree of recrystallization approaching that of a virgin sample. (Author).
Book Synopsis Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity by : Bill W. Mullins
Download or read book Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity written by Bill W. Mullins and published by . This book was released on 1979 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effect of laser annealing on ion implanted GaAs and Si has been assessed using optical reflectivity spectra. The spectra were recorded over the range of 2100A to 4500A and reflectivity peaks were obtained near 2400A and 4100A for GaAs and 2700A and 3700A for Si. The magnitude of these peaks was then observed as a function of annealing parameters. Laser annealing was carried out using a 30 nsec ruby laser pulse. The GaAs samples were implanted 120 KeV Te at a fluence of 10 to the 14th power ions/sq. cm; Si samples were implanted with 30 KeV In at a fluence of 10 to the 15th power ions/sq cm. The reflectivity spectrum of implanted GaAs was found to return to that of unimplanted materials at an annealing energy density of approximately 0.35 J sq. cm. whereas the spectrum of Si was found to approach that of the unimplanted samples at energy densities of 1.34 J/sq. cm. The values obtained compare well with those obtained from other diagnostic techniques. (Author).
Book Synopsis Cathodoluminescence on the Effects of Te Implantation and Laser Annealing in Gallium Arsenide by : Ronald L. Lusk
Download or read book Cathodoluminescence on the Effects of Te Implantation and Laser Annealing in Gallium Arsenide written by Ronald L. Lusk and published by . This book was released on 1978 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt: The United States Air Force uses devices which must operate in high temperature environments where intrinsic (pure) semiconductors do not perform well. With the intentional addition of impurity ions (doping) into the lattice of a crystal, the semiconductor gallium arsenide (GaAs) should have the electrical properties required for operation in the environments mentioned above. Gallium arsenide is an intermetallic compound formed from a group III element (gallium) and a group V element (arsenic). It crystallizes in the zinc blende structure and has physical properties which are similar to those of the covalent group IV semiconductors, germanium and silicon. The electrical properties, such as high electron mobility, have made GaAs very useful in many technical applications. However, the promise that GaAs shows for use in future devices, such as microwave devices, is based upon the ability to provide the necessary impurity concentrations in the 'pure' crystal.
Book Synopsis Laser Annealing of Refractory OHMIC Contracts to GaAs by : J. F. Giuliani
Download or read book Laser Annealing of Refractory OHMIC Contracts to GaAs written by J. F. Giuliani and published by . This book was released on 1981 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: Laser annealing has been successfully applied in producing low resistance ohmic contact to GaAs using refractory metallizations. These alloy systems include TiW, Ta, Mo, and Ni deposited on epitaxial Ge layers grown on (100) n-type GaAs substrates. In some cases an N+ layer obtained by ion implantation was present at the GaAs surface. Ohmic contact resistances of 1-5 X .0000001 omega-sq cm have been produced by laser annealing. These values compare favorably with the results obtained by thermal annealing. The refractory ohmic contacts reported here are intended to improve the reliability of devices operated under high-temperature and/or high-power conditions.
Book Synopsis KrF-laser Annealing of Native Oxides on GaAs by :
Download or read book KrF-laser Annealing of Native Oxides on GaAs written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Annealing of native oxides grown on GaAs has been performed using a pulsed KrF laser. This process allows the oxides to be heated to temperatures well above 350°C without arsenic loss from the GaAs substrate. The physical, chemical, and electronic properties of the oxide are markedly changed by laser processing.
Book Synopsis Cathodoluminescence on the Effects of Te Implantation and Laser Annealing in Gallium Arsenide by : Ronald L. Lusk (CAPT, USAF.)
Download or read book Cathodoluminescence on the Effects of Te Implantation and Laser Annealing in Gallium Arsenide written by Ronald L. Lusk (CAPT, USAF.) and published by . This book was released on 1978 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Laser Annealing of Ion Implanted Semiconductors by : J. F. Morhange
Download or read book Laser Annealing of Ion Implanted Semiconductors written by J. F. Morhange and published by . This book was released on 1984 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contents: Raman Spectroscopy of Amorphous GaAs of Crystalline Transition Induced by Laser Annealing; The Vibration of a Gallium Arsenide Microcristallite; Experimental Determination of the Temperature of Silicon at the Spot of a Continuous Laser; Raman Spectroscopy of Very Heavily Doped Silicon; Sub-Picosecond Spectroscopy. Annexes: Lattice Dynamics of Thin Ionic Slabs; Anharmonic Effects in Light Scattering Due to Optical Phonons in Silicon; Fundamental of Laser Annealing.
