Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Large Signal Transistor Modeling With Applications To Investigations Of Rf Power Amplifier Behavior
Download Large Signal Transistor Modeling With Applications To Investigations Of Rf Power Amplifier Behavior full books in PDF, epub, and Kindle. Read online Large Signal Transistor Modeling With Applications To Investigations Of Rf Power Amplifier Behavior ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Large Signal Transistor Modeling with Applications to Investigations of RF Power Amplifier Behavior by : Jens Vidkjaer
Download or read book Large Signal Transistor Modeling with Applications to Investigations of RF Power Amplifier Behavior written by Jens Vidkjaer and published by . This book was released on 1974 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Behavioral Modeling and Linearization of RF Power Amplifiers by : John Wood
Download or read book Behavioral Modeling and Linearization of RF Power Amplifiers written by John Wood and published by Artech House. This book was released on 2014-06-01 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wireless voice and data communications have made great improvements, with connectivity now virtually ubiquitous. Users are demanding essentially perfect transmission and reception of voice and data. The infrastructure that supports this wide connectivity and nearly error-free delivery of information is complex, costly, and continually being improved. This resource describes the mathematical methods and practical implementations of linearization techniques for RF power amplifiers for mobile communications. This includes a review of RF power amplifier design for high efficiency operation. Readers are also provided with mathematical approaches to modeling nonlinear dynamical systems, which can be applied in the context of modeling the PA for identification in a pre-distortion system. This book also describes typical approaches to linearization and digital pre-distortion that are used in practice.
Book Synopsis Modeling and Design Techniques for RF Power Amplifiers by : Arvind Raghavan
Download or read book Modeling and Design Techniques for RF Power Amplifiers written by Arvind Raghavan and published by John Wiley & Sons. This book was released on 2008-01-09 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt: Achieve higher levels of performance, integration, compactness, and cost-effectiveness in the design and modeling of radio-frequency (RF) power amplifiers RF power amplifiers are important components of any wireless transmitter, but are often the limiting factors in achieving better performance and lower cost in a wireless communication system—presenting the RF IC design community with many challenges. The next-generation technological advances presented in this book are the result of cutting-edge research in the area of large-signal device modeling and RF power amplifier design at the Georgia Institute of Technology, and have the potential to significantly address issues of performance and cost-effectiveness in this area. Richly complemented with hundreds of figures and equations, Modeling and Design Techniques for RF Power Amplifiers introduces and explores the most important topics related to RF power amplifier design under one concise cover. With a focus on efficiency enhancement techniques and the latest advances in the field, coverage includes: Device modeling for CAD Empirical modeling of bipolar devices Scalable modeling of RF MOSFETs Power amplifier IC design Power amplifier design in silicon Efficiency enhancement of RF power amplifiers The description of state-of-the-art techniques makes this book a valuable and handy reference for practicing engineers and researchers, while the breadth of coverage makes it an ideal text for graduate- and advanced undergraduate-level courses in the area of RF power amplifier design and modeling.
Book Synopsis Modular Nonlinear Characterization System and Large-signal Behavioral Modelling of Unmatched Transistors for Streamlined Power Amplifier Design by : Dylan Bespalko
Download or read book Modular Nonlinear Characterization System and Large-signal Behavioral Modelling of Unmatched Transistors for Streamlined Power Amplifier Design written by Dylan Bespalko and published by . This book was released on 2016 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis provides a comprehensive approach to the characterization and modelling of large-signal nonlinear RF/microwave devices, circuits and systems. This research is moti- vated by the increased linearity and power-efficiency requirements of modern power ampli- fier technology for wireless communications. For instance, maximizing the power amplifier's efficiency can only be achieved by operating RF transistors under strong nonlinear condi- tions, however this is contradictory to maximizing PA linearity. Simultaneously designing for efficiency and linearity is a challenging trade-off in today's fragmented design process, therefore the advancement of computer-aided design (CAD) tools is essential for achieving an optimal solution. The successful and effective CAD tool based PA design relies on the availability of accurate nonlinear models to mimic the electro-thermal behaviour of RF transistors. The accuracy of these models depends on three factors: 1. The formulation of the model. 2. The model extraction procedure. 3. The accuracy of the measurement data. While prior work focuses separately on the improved model formulations or improving characterization accuracy, this thesis provides a comprehensive analysis of all three factors. This thesis proposes a modular large-signal RF device characterization system, and a non- linear behavioral model capable of handling strongly nonlinear unmatched RF transistors, each necessary to streamline the design process and achieve a first-pass PA design. iii As a first step, a large-signal characterization system has been developed to measure the multi-harmonic frequency response of RF transistors and has the ability to i) Perform high-power measurements, ii) Characterize unmatched transistors, iii) Operate the DUT under any possible operating condition, iv) Synthesize any multi-harmonic stimulus, and v) Reconstruct the time-domain I/V waveforms at the ports of the DUT. The proposed characterization system eliminates fragmentation between measurement and simulation environments by providing seamless integration with Harmonic Balance simulations. This provides a common framework that integrates all steps of the PA design process from device-level characterization, to circuit-level measurement and validation. This system is implemented using modular instruments consisting of mixer-based receivers, arbitrary waveform generators, impedance tuners, and a multi-harmonic phase-coherent reference source. It also integrates sequential calibration routines to provide receiver, port match, and source-power corrections to the DUT measurement plane and measurement routines for automated data collection. The second part of the thesis researches black-box frequency-domain behavioral mod- els that can approximate strongly nonlinear, unmatched devices. Our investigation yielded two complimentary solutions to ensure the targeted modelling accuracy. First, improving the accuracy of a first-order expansion-based Poly-Harmonic Distortion (PHD) model by 5dB, in terms of Normalized Mean-Squared Error (NMSE), by minimizing multi-harmonic reflections that artificially increase the order of the nonlinear system. While this addresses the fictitious need for higher-order models due to the deficiencies in the model extraction procedure, strongly nonlinear devices will require high-order models to achieve the targeted accuracy over a larger measurement distribution. Hence, a variable order Multi-Harmonic Volterra (MHV) model is proposed to extend the PHD model formulation to strong non- linear devices. This model is extracted by utilizing the proposed characterization system to extract higher-order multi-variate model coefficients not included in the PHD model. The resulting model improves DC drain current prediction by 5dB and improves funda- mental output-power prediction by 2dB. The MHV model improves the vector power-gain prediction by 3.4dB in realistic PA design applications, thereby providing better emulation of linearization techniques within a simulation environment. Finally, a concurrent dual-band PA design is studied as an example of how the pro- iv posed nonlinear characterization system and behavioural modelling approach can be used to enable complex PA designs. First, a 10W Class-AB PA is designed using dual-band matching-network theory, however it is difficult to implement because the design technique does not control the matching fractional bandwidth as a design parameter. Therefore, an alternative Class-J 45W dual-band PA was designed using a low-impedance matching network, combined with a trans-impedance dual-band filter. Although the dual-band PA can achieve comparable performance to an equivalent single-band PA at each separate fre- quency, further development of characterization, modeling, and circuit design techniques is needed to achieve high-efficiency during concurrent operation.
Book Synopsis RF Power Amplifier Behavioral Modeling by : Dominique Schreurs
Download or read book RF Power Amplifier Behavioral Modeling written by Dominique Schreurs and published by Cambridge University Press. This book was released on 2008-10-30 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive and up-to-date one-stop reference for engineers working in power amplifier modeling or RF designers using power amplifier models.
Book Synopsis Fundamentals of RF and Microwave Transistor Amplifiers by : Inder Bahl
Download or read book Fundamentals of RF and Microwave Transistor Amplifiers written by Inder Bahl and published by John Wiley & Sons. This book was released on 2009-06-17 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
Book Synopsis Analysis of Power Transistor Behavioural Modeling Techniques Suitable for Narrow-band Power Amplifier Design by : Amir-Reza Amini
Download or read book Analysis of Power Transistor Behavioural Modeling Techniques Suitable for Narrow-band Power Amplifier Design written by Amir-Reza Amini and published by . This book was released on 2012 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: The design of power amplifiers within a circuit simulator requires a good non-linear model that accurately predicts the electormagnetic behaviour of the power transistor. In recent years, a certain class of large signal frequency-dependent black-box behavioural modeling techniques known as Poly-Harmonic Distortion (PHD) models has been devised to mimic the non-linear unmatched RF transistor. These models promise a good prediction of the device behaviour under multi-harmonic periodic continuous wave inputs. This thesis describes the capabilities of the PHD modeling framework and the theoretical type of behaviour that it is capable of predicting. Specifically, the PHD framework cannot necessarily predict the response of a broadband aperiodic signal. This analysis will be performed by deriving the PHD modeling framework as a simplification of the Volterra series kernel functions under the assumption that the power transistor is operating under continuous periodic multi-harmonic voltage and current signals in a stable circuit. A PHD model will be seen as a set of describing functions that predict the response of the Device Under Test (DUT) for any given non-linear periodic continuous-wave inputs that have a specific fundamental frequency. Two popular implementations of PHD models that can be found in the literature are the X-parameter and Cardiff models. Each model formulates the describing functions of the general PHD model differently. The mathematical formulation of the X-parameter and Cardiff models will be discussed in order to provide a theoretical ground for comparing their robustness. The X-parameter model will be seen as the first-order Taylor series approximation of the PHD model describing functions around a Large Signal Operating Point (LSOP) of the device under test. The Cardiff large-signal model uses Fourier series coefficient functions that vary with the magnitude of the large signal(s) as the PHD model describing functions. This thesis will provide a breakdown of the measurement procedure required for the extraction of these models, the challenges involved in the measurement, as well as the mathematical extraction of the model coe cients from measurement data. As each of these models contain have extended versions that enhance the predictive capability of the model under stronger nonlinear modes of operation, a comparison is used to represent the cost of increasing model accuracy as a function of the increasing model complexity for each model. The order of complexity of each model can manifest itself in terms of the mathematical formulation, the number of parameters required and the measurement time that is required to extract each model for a given DUT. This comparison will fairly assess the relative strengths and weaknesses of each model.
Book Synopsis Radio Frequency Transistors by : Helge Granberg
Download or read book Radio Frequency Transistors written by Helge Granberg and published by Elsevier. This book was released on 2013-10-22 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Cellular telephones, satellite communications and radar systems are adding to the increasing demand for radio frequency circuit design principles. At the same time, several generations of digitally-oriented graduates are missing the essential RF skills. This book contains a wealth of valuable design information difficult to find elsewhere. It's a complete 'tool kit' for successful RF circuit design. Written by experienced RF design engineers from Motorola's semiconductors product section.Book covers design examples of circuits (e.g. amplifiers; oscillators; switches; pulsed power; modular systems; wiring state-of-the-art devices; design techniques).
Book Synopsis Large Signal Modeling of GaN Device for High Power Amplifier Design by : Anwar Hasan Jarndal
Download or read book Large Signal Modeling of GaN Device for High Power Amplifier Design written by Anwar Hasan Jarndal and published by kassel university press GmbH. This book was released on 2006 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Distortion in RF Power Amplifiers by : Joel Vuolevi
Download or read book Distortion in RF Power Amplifiers written by Joel Vuolevi and published by Artech House. This book was released on 2003 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here is a thorough treatment of distortion in RF power amplifiers. This unique resource offers expert guidance in designing easily linearizable systems that have low memory effects. It offers you a detailed understanding of how the matching impedances of a power amplifier and other RF circuits can be tuned to minimize overall distortion. What's more, you see how to build models that can be used for distortion simulations.
Book Synopsis Modeling and Characterization of RF and Microwave Power FETs by : Peter Aaen
Download or read book Modeling and Characterization of RF and Microwave Power FETs written by Peter Aaen and published by Cambridge University Press. This book was released on 2007-06-25 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Book Synopsis Load-Pull Techniques with Applications to Power Amplifier Design by : Fadhel M. Ghannouchi
Download or read book Load-Pull Techniques with Applications to Power Amplifier Design written by Fadhel M. Ghannouchi and published by Springer Science & Business Media. This book was released on 2012-06-06 with total page 241 pages. Available in PDF, EPUB and Kindle. Book excerpt: This first book on load-pull systems is intended for readers with a broad knowledge of high frequency transistor device characterization, nonlinear and linear microwave measurements, RF power amplifiers and transmitters. Load-Pull Techniques with Applications to Power Amplifier Design fulfills the demands of users, designers, and researchers both from industry and academia who have felt the need of a book on this topic. It presents a comprehensive reference spanning different load-pull measurement systems, waveform measurement and engineering systems, and associated calibration procedures for accurate large signal characterization. Besides, this book also provides in-depth practical considerations required in the realization and usage of load-pull and waveform engineering systems. In addition, it also provides procedure to design application specific load-pull setup and includes several case studies where the user can customize architecture of load-pull setups to meet any specific measurement requirements. Furthermore, the materials covered in this book can be part of a full semester graduate course on microwave device characterization and power amplifier design.
Book Synopsis GaN Transistor Modeling for RF and Power Electronics by : Yogesh Singh Chauhan
Download or read book GaN Transistor Modeling for RF and Power Electronics written by Yogesh Singh Chauhan and published by Elsevier. This book was released on 2024-05-31 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. This book provides an overview of the operation and physics of GaN-based transistors All aspects of the ASM-HEMT model for GaN circuits, an industry standard model, are described in depth by the developers of the model Parameter extraction of GaN devices and measurement data requirements for GaN model extraction are detailed
Book Synopsis Fundamentals of Nonlinear Behavioral Modeling for RF and Microwave Design by : John Wood
Download or read book Fundamentals of Nonlinear Behavioral Modeling for RF and Microwave Design written by John Wood and published by Artech House Publishers. This book was released on 2005 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: A revised collection of groundbreaking presentations made at a recent IMS (International Microwave Symposium) workshop, this cutting-edge resource provides a comprehensive treatment of nonlinear behavioral modeling for RF and microwave circuits and systems from renowned experts in the field. Presenting state-of-the-art RF and microwave applications, this practical book gives you hands-on techniques that you can use immediately on your current projects.
Book Synopsis Transistor Level Modeling for Analog/RF IC Design by : Wladyslaw Grabinski
Download or read book Transistor Level Modeling for Analog/RF IC Design written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2006-07-01 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
Book Synopsis Large Signal Electro-thermal LDMOSFET Modeling and the Thermal Memory Effects in RF Power Amplifiers by : Wenhua Dai
Download or read book Large Signal Electro-thermal LDMOSFET Modeling and the Thermal Memory Effects in RF Power Amplifiers written by Wenhua Dai and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: In this dissertation an analytical large signal electro-thermal LDMOSFET model -- Agere Electro-Thermal (AET) model -- is presented. Composed by three parts: a die level device model, an equivalent circuit for the package portion and a thermal network, AET model was implemented in Agilent EESOF's RF circuit design software -- Advanced Design System (ADS). The methodology developed could be applied to other high power device models development as well. The LDMOSFET's distributed and dynamic thermal responses are computed by a modified image method. Thermal memory effects are studied with the aid of the newly developed distributed and dynamic thermal models. The package model in such discrete devices are extracted from geometry estimation, and S-parameter measurements. Loadpull design technique was implemented in simulation level, and the contours of output power and efficiency agree with those obtained in loadpull measurement. The model exhibits a good accuracy in predicting P1dB, gain, PAE, IMD3 and IMD. Pros and cons between analytical model and table based model are compared by using AET and a formally developed BSpline table model -- OSUFET. A distributed electro-thermal model was developed to investigate the impact of a non-uniformly distributed temperature profile on the model accuracy. A 3D image method was used to compute the device's thermal resistance matrix. The complexity of the distributed electro-thermal model was further reduced by using its symmetry. Temperature distribution is reproduced in this model and it is found to have no significant impacts on electrical performance. The image method was further extended to compute the 3D transient temperature step responses, from which multiple thermal time constants can be extracted and applied to electro-thermal models. This improved transient thermal model is found to have a strong impact on the thermal memory effects in RF power amplifiers. With the aid of several electro-thermal models with different thermal transient accuracy, thermal memory effects and electrical memory effects can be characterized separately. Thermal memory effects are found to be stronger in amplifiers where predistortion technique is present, and is most significant for envelop frequency below 1 MHz.
