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Ion Implantation In Semiconductors 1976
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Book Synopsis Ion Implantation in Semiconductors 1976 by : Fred Chernow
Download or read book Ion Implantation in Semiconductors 1976 written by Fred Chernow and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 733 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Fifth International Conference on Ion Implantation took place in Boulder, Colorado between the 9th and 13th of August 1976. Papers were delivered by scientists and engineers from 15 countries, and the attendees represented 19 countries. As has become the custom at these conferences, the sessions were intense with the coffee breaks and evenings given to informal meetings among the participants. It was a time to renew old friendships, begin new ones, exchange ideas, personally question authors of papers that appeared in the literature since the last conference and find out what was generally happening in Ion Implantation. In recent years it has beome more difficult to get funding to travel to such meetings. To assist the participating authors financial aid was solicited from industry and the Office of Naval Research. We are most grateful for their positive response to our requests. The success of the conference was in part due to their generous contributions. The Program Committee had the unhappy task of the reviewing of more than 170 abstracts. The result of their labors was well worth their effort. Much thanks goes to them for molding the conference into an accurate representation of activities in the field. Behind the scenes in Boulder, local arrangements were handled ably by Graeme Eldridge. The difficulty of this task cannot be overemphasized. Our thanks to him for a job well done.
Book Synopsis The Physics of Micro/Nano-Fabrication by : Ivor Brodie
Download or read book The Physics of Micro/Nano-Fabrication written by Ivor Brodie and published by Springer Science & Business Media. This book was released on 1992 with total page 676 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this revised and expanded edition, the authors provide a comprehensive overview of the tools, technologies, and physical models needed to understand, build, and analyze microdevices. Students, specialists within the field, and researchers in related fields will appreciate their unified presentation and extensive references.
Book Synopsis Ion Implantation Science and Technology by : J.F. Ziegler
Download or read book Ion Implantation Science and Technology written by J.F. Ziegler and published by Elsevier. This book was released on 2012-12-02 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation Science and Technology: Second Edition, just like the first edition, serves as both an introduction and tutorial to the science, techniques, and machines involved in the subject. The book is divided into two parts - Part 1: Ion Implantation Science and Part 2: Ion Implantation Technology. Part 1 covers topics such as the stopping and range of ions in solids; ion implantation damage in silicon; experimental annealing and activation; and the measurement on ion implantation. Part 2 includes ion optics and focusing on implanter design; photoresist problems and particle contamination; ion implantation diagnostics and process control; and emission of ionizing radiation from ion implanters. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.
Book Synopsis Ion Implantation and Beam Processing by : J. S. Williams
Download or read book Ion Implantation and Beam Processing written by J. S. Williams and published by Academic Press. This book was released on 2014-06-28 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.
Book Synopsis III-V Semiconductor Materials and Devices by : R.J. Malik
Download or read book III-V Semiconductor Materials and Devices written by R.J. Malik and published by Elsevier. This book was released on 2012-12-02 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.
Book Synopsis Site Characterization and Aggregation of Implanted Atoms in Materials by : A. Perez
Download or read book Site Characterization and Aggregation of Implanted Atoms in Materials written by A. Perez and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: Explosive developments in microelectronics, interest in nuclear metallurgy, and widespread applications in surface science have all produced many advances in the field of ion implantation. The research activity has become so intensive and so broad that the field has become divided into many specialized subfields. An Advanced Study Institute, covering the basic and common phenomena of aggregation, seems opportune for initiating interested scientists and engineers into these various active subfields since aggregation usually follows ion implantation. As a consequence, Drs. Perez, Coussement, Marest, Cachard and I submitted such a pro posal to the Scientific Affairs Division of NATO, the approval of which resulted in the present volume. For the physicist studying nuclear hyperfine interactions, the consequences of aggregation of implanted atoms, even at low doses, need to be taken into account if the results are to be correctly interpreted. For materials scientists and device engineers, under standing aggregation mechanisms and methods of control is clearly essential in the tailoring of the end products.
Book Synopsis 国立国会図書館所蔵科学技術関係欧文会議錄目錄 by : 国立国会図書館 (Japan)
Download or read book 国立国会図書館所蔵科学技術関係欧文会議錄目錄 written by 国立国会図書館 (Japan) and published by . This book was released on 1972 with total page 672 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Backscattering Spectrometry by : Wei-Kan Chu
Download or read book Backscattering Spectrometry written by Wei-Kan Chu and published by Elsevier. This book was released on 2012-12-02 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: Backscattering Spectrometry reviews developments in backscattering spectrometry and covers topics ranging from instrumentation and experimental techniques to beam parameters and energy loss measurements. Backscattering spectrometry of thin films is also considered, and examples of backscattering analysis are given. This book is comprised of 10 chapters and begins with an introduction to backscattering spectrometry, what it can and what it cannot accomplish, and some ""rules of thumb"" for interpreting or reading spectra. The relative strengths and weaknesses of backscattering spectrometry in the framework of materials analysis are outlined. The following chapters focus on kinematics, scattering cross sections, energy loss, and energy straggling; backscattering analysis of thin films of various degrees of complications; the influence of beam parameters; and mass and depth resolutions and their relationships to the mass and energy of projectiles. Many examples of backscattering analysis are also presented to illustrate the capability and limitation of backscattering. Backscattering applications when combined with channeling effects are considered as well. The final chapter provides a list of references on the applications of backscattering spectrometry. This monograph will be a useful resource for physicists.
Book Synopsis Semiconductor Devices and Integrated Electronics by : A. G. Milnes
Download or read book Semiconductor Devices and Integrated Electronics written by A. G. Milnes and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 1014 pages. Available in PDF, EPUB and Kindle. Book excerpt: For some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1985 with total page 1076 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Impurity Doping Processes in Silicon by : F.F.Y. Wang
Download or read book Impurity Doping Processes in Silicon written by F.F.Y. Wang and published by Elsevier. This book was released on 2012-12-02 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.
Book Synopsis Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization by :
Download or read book Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization written by and published by Academic Press. This book was released on 1997-06-12 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Book Synopsis Semiconductor Silicon 1977 by : Howard R. Huff
Download or read book Semiconductor Silicon 1977 written by Howard R. Huff and published by . This book was released on 1977 with total page 1170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrochemical Corrosion Behavior of Alloys Formed by Ion Implantation by : United States. Bureau of Mines
Download or read book Electrochemical Corrosion Behavior of Alloys Formed by Ion Implantation written by United States. Bureau of Mines and published by . This book was released on 1979 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1982 with total page 1696 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Report of Investigations written by and published by . This book was released on 1979 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Treatise on Heavy-Ion Science by : D.A. Bromley
Download or read book Treatise on Heavy-Ion Science written by D.A. Bromley and published by Springer Science & Business Media. This book was released on 2012-11-27 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: For 75 years the stopping of energetic ions in matter has been a subject of great theoretical and experimental interest. The theoretical treatment of the stopping of ions in matter is largely due to the work of Bohr, 1-3 Bethe,4-6 Bloch,7. s and Lindhard,9-12 and it has been reviewed by Bohr,3 Fano,13 17 20 Jackson,14 Sigmund,15 Ahlen,16 and Ziegler et al. - Soon after the discovery of energetic particle emission from radioactive materials, there was interest in how these corpuscles were slowed down in traversing matter. In 1900, Marie Curie stated 21 the hypothesis that Hies rayons alpha sont des projectiles materiels susceptibles de perdre de leur vitesse en travers ant la matiere." Early attempts to evaluate this were incon clusive for there was not yet an accurate proposed model of the atom. Enough experimental evidence was collected in the next decade to make stopping power theory one of the central concerns of those attempting to develop an atomic model. J.J. Thomson, director of the prestigious Cavendish Laboratory, and Niels Bohr, a fresh postdoctoral scientist at Rutherford's Manchester Laboratory, both published almost simultaneously22. 23 an analysis of the stopping of charged particles by matter, and each contained many of their divergent ideas on the model of an atom. Thomson ignored in his paper the Rutherford alpha-particle scattering 24 experiment of a year before. But the nuclear atom with a heavy positively 25 charged core was the basis of Bohr's ideas.
