Ion Implantation

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Ion Implantation and Synthesis of Materials

Author : Michael Nastasi
Publisher : Springer Science & Business Media
ISBN 13 : 3540452982
Total Pages : 271 pages
Book Rating : 4.5/5 (44 download)

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Book Synopsis Ion Implantation and Synthesis of Materials by : Michael Nastasi

Download or read book Ion Implantation and Synthesis of Materials written by Michael Nastasi and published by Springer Science & Business Media. This book was released on 2007-05-16 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

Ion Implantation: Basics to Device Fabrication

Author : Emanuele Rimini
Publisher : Springer Science & Business Media
ISBN 13 : 1461522595
Total Pages : 400 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Ion Implantation: Basics to Device Fabrication by : Emanuele Rimini

Download or read book Ion Implantation: Basics to Device Fabrication written by Emanuele Rimini and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.

Ion Implantation Science and Technology

Author : J.F. Ziegler
Publisher : Elsevier
ISBN 13 : 0323144012
Total Pages : 649 pages
Book Rating : 4.3/5 (231 download)

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Book Synopsis Ion Implantation Science and Technology by : J.F. Ziegler

Download or read book Ion Implantation Science and Technology written by J.F. Ziegler and published by Elsevier. This book was released on 2012-12-02 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.

Ion Implantation in Diamond, Graphite and Related Materials

Author : M.S. Dresselhaus
Publisher : Springer Science & Business Media
ISBN 13 : 3642771718
Total Pages : 212 pages
Book Rating : 4.6/5 (427 download)

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Book Synopsis Ion Implantation in Diamond, Graphite and Related Materials by : M.S. Dresselhaus

Download or read book Ion Implantation in Diamond, Graphite and Related Materials written by M.S. Dresselhaus and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbon has always been a unique and intriguing material from a funda mental standpoint and, at the same time, a material with many technological uses. Carbon-based materials, diamond, graphite and their many deriva tives, have attracted much attention in recent years for many reasons. Ion implantation, which has proven to be most useful in modifying the near surface properties of many kinds of materials, in particular semiconductors, has also been applied to carbon-based materials. This has yielded, mainly in the last decade, many scientifically interesting and technologically impor tant results. Reports on these studies have been published in a wide variety of journals and topical conferences, which often have little disciplinary overlap, and which often address very different audiences. The need for a review to cover in an integrated way the various diverse aspects of the field has become increasingly obvious. Such a review should allow the reader to get an overview of the research that has been done thus far, to gain an ap preciation of the common features in the response of the various carbon to ion impact, and to become aware of current research oppor allotropes tunities and unresolved questions waiting to be addressed. Realizing this, and having ourselves both contributed to the field, we decided to write a review paper summarizing the experimental and theoretical status of ion implantation into diamond, graphite and related materials.

Ion Implantation: Basics to Device Fabrication

Author : Emanuele Rimini
Publisher : Springer Science & Business Media
ISBN 13 : 9780792395201
Total Pages : 418 pages
Book Rating : 4.3/5 (952 download)

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Book Synopsis Ion Implantation: Basics to Device Fabrication by : Emanuele Rimini

Download or read book Ion Implantation: Basics to Device Fabrication written by Emanuele Rimini and published by Springer Science & Business Media. This book was released on 1994-12-31 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.

Ion-Solid Interactions

Author : Michael Nastasi
Publisher : Cambridge University Press
ISBN 13 : 052137376X
Total Pages : 572 pages
Book Rating : 4.5/5 (213 download)

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Book Synopsis Ion-Solid Interactions by : Michael Nastasi

Download or read book Ion-Solid Interactions written by Michael Nastasi and published by Cambridge University Press. This book was released on 1996-03-29 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive guide to an important materials science technique for students and researchers.

Ion Implantation - Research and Application

Author :
Publisher :
ISBN 13 : 9789535132387
Total Pages : pages
Book Rating : 4.1/5 (323 download)

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Book Synopsis Ion Implantation - Research and Application by :

Download or read book Ion Implantation - Research and Application written by and published by . This book was released on 19?? with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Ion Implantation

Author : Ishaq Ahmad
Publisher : BoD – Books on Demand
ISBN 13 : 9535132377
Total Pages : 154 pages
Book Rating : 4.5/5 (351 download)

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Book Synopsis Ion Implantation by : Ishaq Ahmad

Download or read book Ion Implantation written by Ishaq Ahmad and published by BoD – Books on Demand. This book was released on 2017-06-14 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation is one of the promising areas of sciences and technologies. It has been observed as a continuously evolving technology. In this book, there is a detailed overview of the recent ion implantation research and innovation along with the existing ion implantation technological issues especially in microelectronics. The book also reviews the basic knowledge of the radiation-induced defects production during the ion implantation in case of a semiconductor structure for fabrication and development of the required perfect microelectronic devices. The improvement of the biocompatibility of biomaterials by ion implantation, which is a hot research topic, has been summarized in the book as well. Moreover, advanced materials characterization techniques are also covered in this book to evaluate the ion implantation impact on the materials.

Ion Implantation Technology - 94

Author : S. Coffa
Publisher : Newnes
ISBN 13 : 044459972X
Total Pages : 1031 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Ion Implantation Technology - 94 by : S. Coffa

Download or read book Ion Implantation Technology - 94 written by S. Coffa and published by Newnes. This book was released on 1995-05-16 with total page 1031 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.

Ion Implantation Technology - 92

Author : D.F. Downey
Publisher : Elsevier
ISBN 13 : 0444599800
Total Pages : 716 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Ion Implantation Technology - 92 by : D.F. Downey

Download or read book Ion Implantation Technology - 92 written by D.F. Downey and published by Elsevier. This book was released on 2012-12-02 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approaches are described. The implications for ion implantation technology as well as additional observations of needs and opportunities are discussed. The volume will be of value to all those who are interested in acquiring a more complete understanding of the current developments in ion implantation processes and comprehensive implant models.

Ion Implantation and Activation

Author : Kunihiro Suzuki
Publisher : Bentham Science Publishers
ISBN 13 : 1608057909
Total Pages : 171 pages
Book Rating : 4.6/5 (8 download)

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Book Synopsis Ion Implantation and Activation by : Kunihiro Suzuki

Download or read book Ion Implantation and Activation written by Kunihiro Suzuki and published by Bentham Science Publishers. This book was released on 2013-11-05 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories. Ion implantation can be expressed theoretically as a binary collision, and, experimentally using various mathematical functions. Readers can understand how to establish an ion implantation database by combining theory and experimental data. The models described in this ebook can be directly related to practical experimental data with various approaches: physical, empirical or experimental. Readers can also understand the approximations, and assumptions to reach these models. The redistribution and activation of implanted impurities during subsequent thermal processes are also important subjects and they are described in a broad manner with the combination of theory and experiment, even though many of the models are not well established. Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory, Monte Carlo simulations, Edgeworth Polynomials and much more. This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling. Readers can also benefit from this volume by acquiring the necessary information to improve contemporary process models by themselves.

Ion Implantation Techniques

Author : H. Ryssel
Publisher : Springer Science & Business Media
ISBN 13 : 3642687792
Total Pages : 377 pages
Book Rating : 4.6/5 (426 download)

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Book Synopsis Ion Implantation Techniques by : H. Ryssel

Download or read book Ion Implantation Techniques written by H. Ryssel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, ion implantation has developed into the major doping technique for integrated circuits. Several series of conferences have dealt with the application of ion implantation to semiconductors and other materials (Thousand Oaks 1970, Garmisch-Partenkirchen 1971, Osaka 1974, Warwick 1975, Boulder 1976, Budapest 1978, and Albany 1980). Another series of conferences was devoted more to implantation equipment and tech niques (Salford 1977, Trento 1978, and Kingston 1980). In connection with the Third International Conference on Ion Implantation: Equipment and Tech niques, held at Queen's University, ' Kingston, Ontario, Canada, July 8-11, 1980, a two-day instructional program was organized parallel to an implan tation conference for the first time. This implantation school concentra ted on aspects of implantation-equipment design. This book contains all lectures presented at the International Ion Implantation School organized in connection with the Fourth International Conference on Ion Implantation: Equipment and Techniques, held at the Convention Center, Berchtesgaden, Germany, September 13-17, 1982. In con trast to the first .school, the main emphasis in thiS school was placed on practical aspects of implanter operation and application. In three chap ters, various machine aspects of ion implantation (general concepts, ion sources, safety, calibration, dOSimetry), range distributions (stopping power, range profiles), and measuring techniques (electrical and nonelec tri ca 1 measu ri ng techni ques, annea 1 i ng) are di scussed. In the appendi x, a review of the state of the art in modern implantation equipment is given.

Ion Implantation Into Metals

Author : V. Ashworth
Publisher : Elsevier
ISBN 13 : 1483280187
Total Pages : 385 pages
Book Rating : 4.4/5 (832 download)

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Book Synopsis Ion Implantation Into Metals by : V. Ashworth

Download or read book Ion Implantation Into Metals written by V. Ashworth and published by Elsevier. This book was released on 2016-04-20 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation into Metals presents the proceedings of the 3rd International Conference on the Modification of Surface Properties of Metals by Ion Implantation, held at UMIST, Manchester, UK on June 23-26, 1981. The book includes papers on aqueous corrosion of ion-implanted iron; the mechanical properties and high temperature oxidation behavior in aqueous corrosion; and the potential of ion beam processing in this field of materials science and engineering. The text also presents papers on the important scientific progress in metal physics and related subjects.

Ion Implantation in Semiconductors

Author : Ingolf Ruge
Publisher : Springer Science & Business Media
ISBN 13 : 3642806600
Total Pages : 519 pages
Book Rating : 4.6/5 (428 download)

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Book Synopsis Ion Implantation in Semiconductors by : Ingolf Ruge

Download or read book Ion Implantation in Semiconductors written by Ingolf Ruge and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 519 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume contains the papers that were presented at the Conference. Due to the tremendous volume of research presented, publication here of all the works in full detail was not possible. Many authors therefore graciously agreed to submit abbreviated versions of their papers.

High Energy and High Dose Ion Implantation

Author : S.U. Campisano
Publisher : Elsevier
ISBN 13 : 0444596798
Total Pages : 320 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis High Energy and High Dose Ion Implantation by : S.U. Campisano

Download or read book High Energy and High Dose Ion Implantation written by S.U. Campisano and published by Elsevier. This book was released on 1992-06-16 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion beam processing is a means of producing both novel materials and structures. The contributions in this volume strongly focus on this aspect and include many papers reporting on the modification of the electrical and structural properties of the target materials, both metals and semiconductors, as well as the synthesis of buried and surface compound layers. Many examples on the applications of high energy and high dose ion implantation are also given. All of the papers from Symposia C and D are presented in this single volume because the interests of many of the participants span both topics. Additionally many of the materials science aspects, including experimental methods, equipment and processing problems, diagnostic and analytical techniques are common to both symposia.

Ion Implantation: Equipment and Techniques

Author : H. Ryssel
Publisher : Springer Science & Business Media
ISBN 13 : 3642691560
Total Pages : 564 pages
Book Rating : 4.6/5 (426 download)

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Book Synopsis Ion Implantation: Equipment and Techniques by : H. Ryssel

Download or read book Ion Implantation: Equipment and Techniques written by H. Ryssel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Fourth International Conference on Ion Implantation: Equipment and Tech niques was held at the Convention Center in Berchtesgaden, Bavaria, Germany, from September 13 to 17, 1982. It was attended by more than 200 participants from over 20 different countries. Severa1 series of conferences have dealt with the app1ication of ion implantation to semiconductors and other materials (Thousand Oaks, 1970; Garmisch-Partenkirchen, 1971; Osaka, 1974; Warwick, 1975; Bou1der, 1975; Budapest, 1978; and Albany, 1980). Another series of conferences has been devoted to implantation equipment and techniques (S- ford, 1977; Trento, 1978; and Kingston, 1980). This conference was the fourth in the 1atter series. Twe1ve invited papers and 55 contributed papers covered the areas of ion implantation equipment, measuring techniques, and app1ica tions of implantation to metals and semiconductors. A schoo1 on ion implantation was held in connection with the conference, and the 1ectures presented at this schoo1 were pub1ished as Vo1. 10 of the Springer Series in E1ectrophysics under the tit1e Ion Implantation Techniques (edited by H. Rysse1 and H. G1awischnig). During the conference, space was also provided for presentations and demonstrations by manufacturers of ion implantation equipment. Once again, this conference provided a forum for free discussion among implantation specia1ists in industry as we11 as research institutions. Espe cially effective in stimulating a free exchange of information was the daily get-together over free beer at the "Bier Adam". Many people contributed to the success of this conference.

Ion Implantation in Semiconductors

Author : Susumu Namba
Publisher : Springer Science & Business Media
ISBN 13 : 1468421514
Total Pages : 716 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Ion Implantation in Semiconductors by : Susumu Namba

Download or read book Ion Implantation in Semiconductors written by Susumu Namba and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.