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Ion Channeling Study Of Damage In Neutron Transmutation Doped Semiconductors
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Book Synopsis Ion Channeling Study of Damage in Neutron Transmutation Doped Semiconductors by : K. Kuriyama
Download or read book Ion Channeling Study of Damage in Neutron Transmutation Doped Semiconductors written by K. Kuriyama and published by . This book was released on 1984 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: Neutron irradiation at a flux of 5 x 1011 neutrons /cm2 sec for 18 hr has been performed on n-type GaAs with 5.9 x 10-2?-cm (n= 2.1 x 1016/cm3). In annealing experiments for electrical properties, it is found that neutron irradiated-induced damages are removed by the annealing temperature at 800°C. The recovery of radiation damage is also confirmed from the improvement of photoluminescence for GaAs annealed at 800°C. The magnitude of the average displacement damage introduced during neutron irradiation is estimated to be 0.15 A by the measurement of Rutherford Backscattering channeling.
Book Synopsis Neutron Transmutation Doping of Semiconductor Materials by : Robert D. Larrabee
Download or read book Neutron Transmutation Doping of Semiconductor Materials written by Robert D. Larrabee and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
Book Synopsis Semiconductor Processing by : Dinesh C. Gupta
Download or read book Semiconductor Processing written by Dinesh C. Gupta and published by ASTM International. This book was released on 1984 with total page 673 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Neutron Transmutation Doping in Semiconductors by : J. Meese
Download or read book Neutron Transmutation Doping in Semiconductors written by J. Meese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.
Book Synopsis Technical Impediments to a More Effective Utilization of Neutron Transmutation Doped Silicon for High-power Device Fabrication by : David R. Myers
Download or read book Technical Impediments to a More Effective Utilization of Neutron Transmutation Doped Silicon for High-power Device Fabrication written by David R. Myers and published by . This book was released on 1980 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis ASTM Special Technical Publication by :
Download or read book ASTM Special Technical Publication written by and published by . This book was released on 1911 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Study of Radiation Damages in Neutron Transmutation Doped Silicon Using EPR Technique by : Mohammad Saeed Uddin
Download or read book The Study of Radiation Damages in Neutron Transmutation Doped Silicon Using EPR Technique written by Mohammad Saeed Uddin and published by . This book was released on 1985 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nuclear Methods in Semiconductor Physics by : G. Langouche
Download or read book Nuclear Methods in Semiconductor Physics written by G. Langouche and published by Elsevier. This book was released on 1992-04-01 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: The two areas of experimental research explored in this volume are: the Hyperfine Interaction Methods, focusing on the microscopic configuration surrounding radioactive probe atoms in semiconductors, and Ion Beam Techniques using scattering, energy loss and channeling properties of highly energetic ions penetrating in semiconductors. A large area of interesting local defect studies is discussed. Less commonly used methods in the semiconductor field, such as nuclear magnetic resonance, electron nuclear double resonance, muon spin resonance and positron annihilation, are also reviewed. The broad scope of the contributions clearly demonstrates the growing interest in the use of sometimes fairly unconventional nuclear methods in the field of semiconductor physics.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1988 with total page 752 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Neutron-Transmutation-Doped Silicon by : Jens Guldberg
Download or read book Neutron-Transmutation-Doped Silicon written by Jens Guldberg and published by . This book was released on 2014-01-15 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Neutron Transmutation Doping of Silicon at Research Reactors by : International Atomic Energy Agency
Download or read book Neutron Transmutation Doping of Silicon at Research Reactors written by International Atomic Energy Agency and published by . This book was released on 2012 with total page 95 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication details the processes and history of neutron transmutation doping of silicon, particularly its commercial pathway, followed by the requirements for a technologically modern and economically viable production scheme and the current trends in the global market for semiconductor products. It should serve as guidelines on the technical requirements, involved processes and required quality standards for the transmission of sound practices and advice for research reactor managers and operators planning commercial scale production of silicon. Furthermore, a detailed and specific database of most of the worlds research reactor facilities in this domain is included, featuring their irradiation capabilities, associated production capacities and processing.
Book Synopsis Fabrication of Semiconductor Devices by Neutron Transmutation Doping by :
Download or read book Fabrication of Semiconductor Devices by Neutron Transmutation Doping written by and published by . This book was released on 1962-12 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1974 with total page 764 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis ERDA Energy Research Abstracts by : United States. Energy Research and Development Administration
Download or read book ERDA Energy Research Abstracts written by United States. Energy Research and Development Administration and published by . This book was released on 1977 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Damage and Defects in Semiconductors by : J. E. Whitehouse
Download or read book Radiation Damage and Defects in Semiconductors written by J. E. Whitehouse and published by . This book was released on 1972 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report presents the proceedings of International Conference on Defects in Semiconductors, consisting of 54 articles showing recent research results on the production and properties of lattice defects in semiconductors. As in the previous meetings of this bi-annual series, emphasis was on electron and neutron damage in silicon, gallium arsenide and germanium, closely followed by ion implantation defect studies. Interest in the other III-V and II-VI compounds has increased. Reported use of special techniques includes electron microscopy, channeling, local vibrational modes, electron spin resonance and Mossbauer effect. (Author).
Download or read book ERDA Energy Research Abstracts written by and published by . This book was released on 1985 with total page 676 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Neutron Transmutation Doping of Silicon for the Production of Radiation Detectors by : D. Alexiev
Download or read book Neutron Transmutation Doping of Silicon for the Production of Radiation Detectors written by D. Alexiev and published by . This book was released on 1987 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt:
