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Investigations Of The Molecular Beam Epitaxial Growth And Characteristics Of External Excitation Induced Non Equilibrium Phases Of Immiscible Iii V Compound Semiconductors
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Book Synopsis Investigations of the Molecular Beam Epitaxial Growth and Characteristics of External Excitation Induced Non-Equilibrium Phases of Immiscible III-V Compound Semiconductors by : A. Madhukar
Download or read book Investigations of the Molecular Beam Epitaxial Growth and Characteristics of External Excitation Induced Non-Equilibrium Phases of Immiscible III-V Compound Semiconductors written by A. Madhukar and published by . This book was released on 1985 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: This program undertakes experimental and theoretical investigation of the role of growth kinetics and mechanism(s) in molecular beam epitaxial growth of III-V semiconductors and its possible control via laser excitation to effect metastable structures and phases. The experimental work on laser induced MBE growth is collaboratively carried out. Specifically, progress is reported on (i) Monte-Carlo computer simulations of MBE growth and predictions of the dynamics of reflection-high-energy-electron-diffraction (RHEED) intensities (ii) a theory of laser--induced-desorption (iii) Experimental studies of the RHEED intensity dynamics for GaAs/InxGa1-xAs(100) MBE growth (iv) the first realization of GaAs/InAs strained layer structures (with 7.4% lattice mismatch) and transmission electron microscopy studies showing high quality interfaces, and (v) establishment of a facility for magneto-absorption studies.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1985 with total page 1346 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Study of the Initial Stages of Molecular Beam Epitaxial Growth of III-V Compound Semiconductors on Silicon by : Hitoshi Kawanami
Download or read book Study of the Initial Stages of Molecular Beam Epitaxial Growth of III-V Compound Semiconductors on Silicon written by Hitoshi Kawanami and published by . This book was released on 1991 with total page 87 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxial Growth of Complex Novel Oxides by : N. J. C. Ingle
Download or read book Molecular Beam Epitaxial Growth of Complex Novel Oxides written by N. J. C. Ingle and published by . This book was released on 2001 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Some Investigations of Molecular Beam Epitaxial Growth of III-V Semiconductor Films Via Monte-Carlo Computer Simulations, Carrier Tunneling and Spectroscopic Ellipsometry by : A. Madbukar
Download or read book Some Investigations of Molecular Beam Epitaxial Growth of III-V Semiconductor Films Via Monte-Carlo Computer Simulations, Carrier Tunneling and Spectroscopic Ellipsometry written by A. Madbukar and published by . This book was released on 1984 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Experimental work this past year was primarily directed toward enhancing the growth and characterization capabilities of the PI's laboratory. Significant improvements were completed on the MBE system and the in-situ ellipsometry apparatus was demonstrated in a bread board setup. Theoretical work consisted of preliminary Monte-Carlo investigation of the MBE growth III-V compounds. Extensive progress was made on modeling the phase separation occurring during growth of Al(x)Ga(1-x)As on (110) GaAs. A mismatch induced, strain dependent exchange reaction between Al and Ga was shown to give long period variations in the Al concentration. The specific predictions of the theory will be tested in a collaborative effort with JPL.
Book Synopsis Molecular Beam Epitaxy by : John Orton
Download or read book Molecular Beam Epitaxy written by John Orton and published by OUP Oxford. This book was released on 2015-06-25 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Book Synopsis Epitaxial Growth Processes by : Chris J. Palmstrøm
Download or read book Epitaxial Growth Processes written by Chris J. Palmstrøm and published by . This book was released on 1994 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy by : Brian R. Pamplin
Download or read book Molecular Beam Epitaxy written by Brian R. Pamplin and published by Elsevier. This book was released on 2017-08-31 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semiconductor surface and crystal physics is also considered. This book is comprised of eight chapters and opens with an overview of MBE as a crystal growth technique. The discussion then turns to the deposition of semiconductor superlattices of GaAs by MBE; important factors that must be considered in the design of a MBE system such as flux uniformity, crucible volume, heat shielding, source baffling, and shutters; and control of stoichiometry deviation in MBE growth of compound semiconductors, along with the effects of such deviation on the electronic properties of the grown films. The following chapters focus on the use of MBE techniques for growth of IV-VI optoelectronic devices; for fabrication of integrated optical devices; and for the study of semiconductor surface and crystal physics. The final chapter examines a superlattice consisting of a periodic sequence of ultrathin p- and n-doped semiconductor layers, possibly with intrinsic layers in between. This monograph will be of interest to chemists, physicists, and crystallographers.
Book Synopsis Materials Fundamentals of Molecular Beam Epitaxy by : Jeffrey Y. Tsao
Download or read book Materials Fundamentals of Molecular Beam Epitaxy written by Jeffrey Y. Tsao and published by Academic Press. This book was released on 2012-12-02 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE. * Provides comprehensive treatment of the basic materials and surface science principles that apply to molecular beam epitaxy * Thorough enough to benefit molecular beam epitaxy researchers * Broad enough to benefit materials, surface, and device researchers * Referenes articles at the forefront of modern research as well as those of historical interest
Book Synopsis Molecular Beam Epitaxial Growth and Electrical and Optical Investigations of III-V Compound Semiconductors by : Anupam Madhukar
Download or read book Molecular Beam Epitaxial Growth and Electrical and Optical Investigations of III-V Compound Semiconductors written by Anupam Madhukar and published by . This book was released on 1986 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: A list of capital equipment acquired for updating the Perkin-Elmer 400 molecular beam epitaxial growth system and establishing capabilities for reflection high energy electron diffraction intensity dynamics, spectroscopic ellipsometry in the near Infrared regime, Hall mobility, capacitance voltage and current voltage measurements is provided, along with a description of the salient features of each of these systems. Keywords: Molecular Beam Epitaxy; Spectroscopic Ellipsometry; Photoluminescence; Hall Mobility.
Book Synopsis Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and Their Device Applications, by : M. G. Astles
Download or read book Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and Their Device Applications, written by M. G. Astles and published by CRC Press. This book was released on 1990 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: An introduction to the basic principles of the technique of liquid-phase epitaxy (LPE) as applied to the growth of the III-V family of compounds.
Book Synopsis Molecular Beam Epitaxial Growth and Characterization of III-V Compound Semiconductor Single and Multiple Interface Structures by : Anupam Madhukar
Download or read book Molecular Beam Epitaxial Growth and Characterization of III-V Compound Semiconductor Single and Multiple Interface Structures written by Anupam Madhukar and published by . This book was released on 1986 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: A brief description of equipment acquired under the present grant is provided, along with a list of equipment. The equipment has enhanced molecular beam epitaxial growth and characterization capabilities in the principal investigator's laboratory.
Book Synopsis Atomistic Aspects of Epitaxial Growth by : Miroslav Kotrla
Download or read book Atomistic Aspects of Epitaxial Growth written by Miroslav Kotrla and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring. The contributions to Atomistic Aspects of Epitaxial Growth are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field.
Book Synopsis Molecular Beam Epitaxy by : Robin F.C. Farrow
Download or read book Molecular Beam Epitaxy written by Robin F.C. Farrow and published by Elsevier. This book was released on 1995-12-31 with total page 795 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Book Synopsis Molecular Beam Epitaxial and Chemical Beam Epitaxial Growth and Doping Studies of (001) CdTe by : Damodaran Rajavel
Download or read book Molecular Beam Epitaxial and Chemical Beam Epitaxial Growth and Doping Studies of (001) CdTe written by Damodaran Rajavel and published by . This book was released on 1991 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemical Beam, Gas-source Molecular Beam, and Molecular Beam Epitaxial Growth of III/V Compound Semiconductor Materials by : Mark John McCollum
Download or read book Chemical Beam, Gas-source Molecular Beam, and Molecular Beam Epitaxial Growth of III/V Compound Semiconductor Materials written by Mark John McCollum and published by . This book was released on 1990 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: A new and unique high vacuum crystal growth system has been developed. The gas source molecular beam/chemical beam epitaxial growth system features a 7000 l/s diffusion pumping system mounted directly beneath a molecular beam epitaxial growth chamber. After careful thermal cleaning of the new growth chamber, p-type GaAs of higher purity than previously reported has been grown by diffusion pumped molecular beam epitaxy. The purity of GaAs grown by this method increases directly from increased pumping. The system has also been used for growth of GaAs by gas-source molecular beam epitaxy and chemical beam epitaxy and the effects of a number of growth parameters on background carrier concentration are reported. High quality InGaP has been grown by gas-source molecular beam epitaxy. The differential thermal expansion coefficient of InGaP on GaAs has been determined directly from variable temperature x-ray measurements. InGaP has also been grown by chemical beam epitaxy. Although the quality of the layers is inferior to those grown by gas-source molecular beam epitaxy, the work presented here is one of the first reports of InGaP grown by chemical beam epitaxy. The results of these investigations are presented and the problems and advantages of the system are discussed.
