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Author : 李仁宏
Publisher :
ISBN 13 :
Total Pages : 117 pages
Book Rating : 4.:/5 (658 download)
Download or read book Investigation of Nitride Semiconductor Nanostructures with Transmission Electron Microscopy written by 李仁宏 and published by . This book was released on 2009 with total page 117 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Maxim Korytov
Publisher :
ISBN 13 :
Total Pages : 180 pages
Book Rating : 4.:/5 (758 download)
Download or read book Quantitative Transmission Electron Microscopy Study of III-Nitride Semiconductor Nanostructures written by Maxim Korytov and published by . This book was released on 2010 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theoretical part of this thesis is dedicated to the adaptation of high-resolution transmission electron microscopy (HRTEM) for the study of GaN-based materials. First, the principle of heterostructure composition evaluation by means of the relative atomic displacement measurement is stated. The comparison of two strain measurement techniques, geometric phase analysis and projection method, is then presented. Finally, the effects of acquisition conditions on strain measurements were studied. The experimental part of this thesis is dedicated to the characterization of GaN quantum dots (QDs) realized on Al0.5Ga0.5N templates. This study revealed several phenomena original for nitride semiconductors. The surface QD shape changes from perfect pyramidal to truncated pyramidal with the increase of the nominal thickness of the deposited GaN layer. The capping of QDs having a perfect pyramidal shape leads to a QD shape truncation and a QD volume increase. Moreover, a phase separation was found in the AlGaN barriers with Al-rich zones formed above the QDs and Ga-rich regions placed around the Al-rich zones. The Al concentration into the Al-rich zones is about 70% and it decreases as the distance from the QD increases. To explain the observed phenomena, various models founded on the principle of total energy minimization have been developed. Several approaches, based on the results of this study and aimed for the improvement of the optoelectronic devices properties, are proposed.
Author : 張文明
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (9 download)
Download or read book Transmission Electron Microscopy Study of Nitride Nanostructures written by 張文明 and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Andreas Rosenauer
Publisher : Springer
ISBN 13 : 3540364072
Total Pages : 238 pages
Book Rating : 4.5/5 (43 download)
Download or read book Transmission Electron Microscopy of Semiconductor Nanostructures written by Andreas Rosenauer and published by Springer. This book was released on 2003-07-03 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides tools well suited for the quantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductor nanostructures with a spatial resolution at near atomic scales. The book focuses on new methods including strain state analysis as well as evaluation of the composition via the lattice fringe analysis (CELFA) technique. The basics of these procedures as well as their advantages, drawbacks and sources of error are all discussed. The techniques are applied to quantum wells and dots in order to give insight into kinetic growth effects such as segregation and migration. In the first part of the book the fundamentals of transmission electron microscopy are provided. These are needed for an understanding of the digital image analysis techniques described in the second part of the book. There the reader will find information on different methods of composition determination. The third part of the book focuses on applications such as composition determination in InGaAs Stranski--Krastanov quantum dots. Finally it is shown how an improvement in the precision of the composition evaluation can be obtained by combining CELFA with electron holography. This is demonstrated for an AlAs/GaAs superlattice.
Author : Richard Haight
Publisher : World Scientific
ISBN 13 : 9814322849
Total Pages : 346 pages
Book Rating : 4.8/5 (143 download)
Download or read book Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization written by Richard Haight and published by World Scientific. This book was released on 2012 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt: As we delve more deeply into the physics and chemistry of functional materials and processes, we are inexorably driven to the nanoscale. And nowhere is the development of instrumentation and associated techniques more important to scientific progress than in the area of nanoscience. The dramatic expansion of efforts to peer into nanoscale materials and processes has made it critical to capture and summarize the cutting-edge instrumentation and techniques that have become indispensable for scientific investigation in this arena. This Handbook is a key resource developed for scientists, engineers and advanced graduate students in which eminent scientists present the forefront of instrumentation and techniques for the study of structural, optical and electronic properties of semiconductor nanostructures.
Author : Giovanni Agostini
Publisher : Elsevier
ISBN 13 : 0080558151
Total Pages : 501 pages
Book Rating : 4.0/5 (85 download)
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier. This book was released on 2011-08-11 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Author : Korytov-M
Publisher : Omn.Univ.Europ.
ISBN 13 : 9786131545009
Total Pages : 196 pages
Book Rating : 4.5/5 (45 download)
Download or read book Quantitative tem study of nitride semiconductors written by Korytov-M and published by Omn.Univ.Europ.. This book was released on 2018-02-28 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theoretical part of this work is dedicated to the adaptation of high-resolution transmission electron microscopy for studying III-nitride semiconductors. First, the principle of heterostructure composition evaluation by means of atomic displacement measurement is stated. The comparison of two strain measurement techniques, geometric phase analysis and projection method, is then presented. Finally, the effects of acquisition conditions on the strain measurements were elaborated. The experimental part of this work is dedicated to the characterization of GaN quantum dots (QDs) grown on AlGaN templates. This study revealed several phenomena original for nitride semiconductors. The surface QD shape depends on the GaN layer thickness, whereas the buried QD shape and volume are influenced by the QD capping. Moreover, a phase separation occurs in the AlGaN barriers. To explain the observed phenomena, various models founded on the principle of total energy minimization have been developed. Several approaches, based on the results of this study and aimed for the improvement of the optoelectronic devices properties, are also proposed.
Author : Andreas Rosenauer
Publisher :
ISBN 13 : 9783662146170
Total Pages : 256 pages
Book Rating : 4.1/5 (461 download)
Download or read book Transmission Electron Microscopy of Semiconductor Nanostructures written by Andreas Rosenauer and published by . This book was released on 2014-01-15 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Eirini Sarigiannidou
Publisher :
ISBN 13 :
Total Pages : 212 pages
Book Rating : 4.:/5 (492 download)
Download or read book Electron Microscopy and III-nitride Nanostructures written by Eirini Sarigiannidou and published by . This book was released on 2004 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this thesis we present the structural characterization of GaN/AIN quantum wells (QWs) and quantum dots (QDs) grown by plasma assisted molecular beam epitaxy. The technique we use is the transmission electron microscopy in (i) high resolution, (ii) energy filtered, (Hi) conventional and (iv) convergent beam modes. The quantitative analysis of our nanostructures is realized using a projection method and the geometric phase analysis. In order to obtain the most accurate results those methods are optimized and specific experimental conditions, like off-axis HRTEM images, are applied. A comparison study between a Ga-face and a N-face GaN/AIN superlattice (SL) is presented and the higher structural quality (the Ga-face SL is proven: abrupt and uniform interfaces, absence of inversion domain boundaries and partially strained QWs. We also analyze the effects of AIN overgrowth on the structural quality of GaN nanostructures. We show that the overgrowth process implies a thinning of the GaN QWs and an isotropic reduction of the GaN QDs size. The phenomenon is attributed to an exchange mechanism between AI atoms from the cap layer and Ga atoms in the nanostructures. We investigate the strain distribution in a GaN/AIN QD superlattice. Using HRTEM, theoretical calculations and X-ray diffraction experiments we demonstrate that the vertical alignment of the QDs is due to a modulation of the strain state of the AIN layers. Finally, we examine the polytype conversion of a GaN film from N-face wurtzite to zinc-blende structure due to Mg high doping.
Author : Challa S.S.R. Kumar
Publisher : Springer Science & Business Media
ISBN 13 : 3642389341
Total Pages : 718 pages
Book Rating : 4.6/5 (423 download)
Download or read book Transmission Electron Microscopy Characterization of Nanomaterials written by Challa S.S.R. Kumar and published by Springer Science & Business Media. This book was released on 2013-12-09 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: Third volume of a 40volume series on nanoscience and nanotechnology, edited by the renowned scientist Challa S.S.R. Kumar. This handbook gives a comprehensive overview about Transmission electron microscopy characterization of nanomaterials. Modern applications and state-of-the-art techniques are covered and make this volume an essential reading for research scientists in academia and industry.
Author : Dai-Ming Tang
Publisher : Springer
ISBN 13 : 9783662524114
Total Pages : 0 pages
Book Rating : 4.5/5 (241 download)
Download or read book In Situ Transmission Electron Microscopy Studies of Carbon Nanotube Nucleation Mechanism and Carbon Nanotube-Clamped Metal Atomic Chains written by Dai-Ming Tang and published by Springer. This book was released on 2016-10-01 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using an in situ transmission electron microscopy (TEM) approach to investigate the growth mechanism of carbon nanotubes (CNTs) as well as the fabrication and properties of CNT-clamped metal atomic chains (MACs) is the focus of the research summarized in this thesis. The application of an in situ TEM approach in the above-mentioned research provides not only real-time observation but also monitored machining and structural evolvement at the atomic level. In this thesis, the author introduces a CNT tubular nano furnace that can be operated under TEM for investigation of the CNT nucleation mechanism. By studying the nucleation process of CNTs in the presence of various catalysts, including iron-based metallic catalysts and silicon oxide-based non-metallic catalysts, the physical states of the catalysts as well as the nucleation and growth process of CNTs are revealed. Based on the understanding of the nucleation mechanism, the author proposes a hetero-epitaxial growth strategy of CNTs from boron nitride, which provides a new route for the controllable growth of CNTs. In addition, the author presents an electron beam-assisted nanomachining technique and the fabrication of a CNT-clamped MAC prototype device based on this technique. The formation process of CNT-clamped Fe atomic chains (ACs) can be monitored with atomic resolution. The demonstrated quantized conductance and uninfluenced half-metallic properties of Fe ACs indicate that CNTs can be promising nanoscale electrodes or interconnectors for the linking and assembly of nano and subnano structures.
Author : A.G. Cullis
Publisher : Springer Science & Business Media
ISBN 13 : 1402086156
Total Pages : 504 pages
Book Rating : 4.4/5 (2 download)
Download or read book Microscopy of Semiconducting Materials 2007 written by A.G. Cullis and published by Springer Science & Business Media. This book was released on 2008-12-02 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains invited and contributed papers presented at the conference on ‘Microscopy of Semiconducting Materials’ held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.
Author : Alexander V. Latyshev
Publisher : Elsevier
ISBN 13 : 0128105135
Total Pages : 553 pages
Book Rating : 4.1/5 (281 download)
Download or read book Advances in Semiconductor Nanostructures written by Alexander V. Latyshev and published by Elsevier. This book was released on 2016-11-10 with total page 553 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures Covers recent developments in the field from all over the world Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries
Author : Chun Maw Tey
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (277 download)
Download or read book Advanced Transmission Electron Microscopy Studies of III-V Semiconductor Nanostructures written by Chun Maw Tey and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yang Qiu
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (926 download)
Download or read book Study of InAs and InP Semiconductor Quantum Dot Nanostructures by Transmission Electron Microscopy written by Yang Qiu and published by . This book was released on 2012 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Laura Lazzarini
Publisher : Elsevier Inc. Chapters
ISBN 13 : 0128083433
Total Pages : 78 pages
Book Rating : 4.1/5 (28 download)
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Laura Lazzarini and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Karen Andre Mkhoyan
Publisher :
ISBN 13 :
Total Pages : 420 pages
Book Rating : 4.E/5 ( download)
Download or read book Scanning Transmission Electron Microscopy Study of III-V Nitrides written by Karen Andre Mkhoyan and published by . This book was released on 2004 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt:
