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Download or read book International Electron Devices Meeting : IEDM ; 21 written by and published by . This book was released on 1975 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : IEEE
ISBN 13 : 9781424415076
Total Pages : 1043 pages
Book Rating : 4.4/5 (15 download)
Download or read book 2007 IEEE International Electron Devices Meeting written by and published by IEEE. This book was released on 2003 with total page 1043 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book 1974 International Electron Devices Meeting (IEDM). written by and published by . This book was released on 1974 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Joachim N. Burghartz
Publisher : John Wiley & Sons
ISBN 13 : 1118517539
Total Pages : 637 pages
Book Rating : 4.1/5 (185 download)
Download or read book Guide to State-of-the-Art Electron Devices written by Joachim N. Burghartz and published by John Wiley & Sons. This book was released on 2013-03-19 with total page 637 pages. Available in PDF, EPUB and Kindle. Book excerpt: Winner, 2013 PROSE Award, Engineering and Technology Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field. Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society Contributed by internationally respected members of the electron devices community A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered A valuable resource R&D managers; engineers in the semiconductor industry; applied scientists; circuit designers; Masters students in power electronics; and members of the IEEE Electron Device Society.
Author : Jaejun Kim
Publisher : Springer Nature
ISBN 13 : 9811639078
Total Pages : 86 pages
Book Rating : 4.8/5 (116 download)
Download or read book Design of Electronic Devices Using Redox-Active Organic Molecules and Their Porous Coordination Networks written by Jaejun Kim and published by Springer Nature. This book was released on 2021-08-23 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses the development of electronic devices using redox-active organic molecules and their porous coordination networks (PCNs), and highlights the importance of the molecular arrangement. Redox-active organic molecules hold considerable promise as flexible electronic elements, because their electronic state can easily be controlled using external energy. Although various kinds of redox-active organic molecules have been synthesized, attempts to apply them to electronic devices have been limited, owing to the lack of proper structural design. Moreover, ligand-based redox-active PCNs remain largely unexplored because of the limited availability of redox-active ligands. In addition to developing new redox-active organic molecules, in order to design electronic devices based on these molecules/PCNs, it is essential to understand the connections between their molecular arrangement, electrical properties, and redox activity. In this thesis, the redox-active organic molecule 2,5,8-tri(4-pyridyl)1,3-diazaphenalene (TPDAP), which features a large pi plane and multi-intermolecular interactivity, is used to develop a resistive switching memory device. In addition, its PCNs are synthesized to fabricate chemiresistive sensors, and the electrical properties are modulated using post-synthetic modification. Each mechanism is systematically investigated by means of structural determination and well-defined control experiments. Subsequently, the book proposes general guidelines for designing electronic devices using redox-active organic molecules. The book will appeal to a broad range of readers, from basic scientists to materials engineers, as well as general, non-expert readers.
Author :
Publisher :
ISBN 13 : 9780780386846
Total Pages : 1085 pages
Book Rating : 4.3/5 (868 download)
Download or read book 2004 IEEE International Electron Devices Meeting written by and published by . This book was released on 2004 with total page 1085 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : An Chen
Publisher : John Wiley & Sons
ISBN 13 : 1118447743
Total Pages : 570 pages
Book Rating : 4.1/5 (184 download)
Download or read book Emerging Nanoelectronic Devices written by An Chen and published by John Wiley & Sons. This book was released on 2015-01-27 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging Nanoelectronic Devices focuses on the future direction of semiconductor and emerging nanoscale device technology. As the dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain increasing functionality at decreasing cost into the indefinite future. This is driving new paradigms of information processing enabled by innovative new devices, circuits, and architectures, necessary to support an increasingly interconnected world through a rapidly evolving internet. This original title provides a fresh perspective on emerging research devices in 26 up to date chapters written by the leading researchers in their respective areas. It supplements and extends the work performed by the Emerging Research Devices working group of the International Technology Roadmap for Semiconductors (ITRS). Key features: • Serves as an authoritative tutorial on innovative devices and architectures that populate the dynamic world of “Beyond CMOS” technologies. • Provides a realistic assessment of the strengths, weaknesses and key unknowns associated with each technology. • Suggests guidelines for the directions of future development of each technology. • Emphasizes physical concepts over mathematical development. • Provides an essential resource for students, researchers and practicing engineers.
Author : F. Roozeboom
Publisher : The Electrochemical Society
ISBN 13 : 1607688344
Total Pages : 188 pages
Book Rating : 4.6/5 (76 download)
Download or read book Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 8 written by F. Roozeboom and published by The Electrochemical Society. This book was released on 2018-05-04 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Arokia Nathan
Publisher : John Wiley & Sons
ISBN 13 : 139420244X
Total Pages : 469 pages
Book Rating : 4.3/5 (942 download)
Download or read book 75th Anniversary of the Transistor written by Arokia Nathan and published by John Wiley & Sons. This book was released on 2023-08-01 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: 75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.
Author : Shimeng Yu
Publisher : CRC Press
ISBN 13 : 1000567575
Total Pages : 214 pages
Book Rating : 4.0/5 (5 download)
Download or read book Semiconductor Memory Devices and Circuits written by Shimeng Yu and published by CRC Press. This book was released on 2022-04-19 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers semiconductor memory technologies from device bit-cell structures to memory array design with an emphasis on recent industry scaling trends and cutting-edge technologies. The first part of the book discusses the mainstream semiconductor memory technologies. The second part of the book discusses the emerging memory candidates that may have the potential to change the memory hierarchy, and surveys new applications of memory technologies for machine/deep learning applications. This book is intended for graduate students in electrical and computer engineering programs and researchers or industry professionals in semiconductors and microelectronics. Explains the design of basic memory bit-cells including 6-transistor SRAM, 1-transistor-1-capacitor DRAM, and floating gate/charge trap FLASH transistor Examines the design of the peripheral circuits including the sense amplifier and array-level organization for the memory array Examines industry trends of memory technologies such as FinFET based SRAM, High-Bandwidth-Memory (HBM), 3D NAND Flash, and 3D X-point array Discusses the prospects and challenges of emerging memory technologies such as PCM, RRAM, STT-MRAM/SOT-MRAM and FeRAM/FeFET Explores the new applications such as in-memory computing for AI hardware acceleration.
Author : Simon Deleonibus
Publisher : CRC Press
ISBN 13 : 0429533624
Total Pages : 332 pages
Book Rating : 4.4/5 (295 download)
Download or read book Electronic Devices Architectures for the NANO-CMOS Era written by Simon Deleonibus and published by CRC Press. This book was released on 2019-05-08 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, internationally recognized researchers give a state-of-the-art overview of the electronic device architectures required for the nano-CMOS era and beyond. Challenges relevant to the scaling of CMOS nanoelectronics are addressed through different core CMOS and memory device options in the first part of the book. The second part reviews new device concepts for nanoelectronics beyond CMOS. The book covers the fundamental limits of core CMOS, improving scaling by the introduction of new materials or processes, new architectures using SOI, multigates and multichannels, and quantum computing.
Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 143987431X
Total Pages : 1041 pages
Book Rating : 4.4/5 (398 download)
Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1041 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.
Author : Cor L. Claeys
Publisher : The Electrochemical Society
ISBN 13 : 1566775728
Total Pages : 509 pages
Book Rating : 4.5/5 (667 download)
Download or read book ULSI Process Integration 5 written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 2007 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: The symposium provided a forum for reviewing and discussing all aspects of process integration, with special focus on nanoscaled technologies, 65 nm and beyond on DRAM, SRAM, flash memory, high density logic-low power, RF, mixed analog-digital, process integration yield, CMP chemistries, low-k processes, gate stacks, metal gates, rapid thermal processing, silicides, copper interconnects, carbon nanotubes, novel materials, high mobility substrates (SOI, sSi, SiGe, GeOI), strain engineering, and hybrid integration.
Author : Chinmay K. Maiti
Publisher : CRC Press
ISBN 13 : 1000638111
Total Pages : 314 pages
Book Rating : 4.0/5 (6 download)
Download or read book Fabless Semiconductor Manufacturing written by Chinmay K. Maiti and published by CRC Press. This book was released on 2022-11-17 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals with 3D nanodevices such as nanowire and nanosheet transistors at 7 nm and smaller technology nodes. It discusses technology computer-aided design (TCAD) simulations of stress- and strain-engineered advanced semiconductor devices, including III-nitride and RF FDSOI CMOS, for flexible and stretchable electronics. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including fabless intelligent manufacturing. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. In order to extend the role of TCAD in the More-than-Moore era, the design issues related to strain engineering for flexible and stretchable electronics have been introduced for the first time.
Author : INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS. GROUP ON ELECTRON DEVICES.
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (846 download)
Download or read book 21ST INTERNATIONAL ELECTRON DEVICES MEETING- PAPERS AND PROGRAMME. written by INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS. GROUP ON ELECTRON DEVICES. and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Brajesh Kumar Kaushik
Publisher : Springer
ISBN 13 : 9811074704
Total Pages : 820 pages
Book Rating : 4.8/5 (11 download)
Download or read book VLSI Design and Test written by Brajesh Kumar Kaushik and published by Springer. This book was released on 2017-12-21 with total page 820 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book constitutes the refereed proceedings of the 21st International Symposium on VLSI Design and Test, VDAT 2017, held in Roorkee, India, in June/July 2017. The 48 full papers presented together with 27 short papers were carefully reviewed and selected from 246 submissions. The papers were organized in topical sections named: digital design; analog/mixed signal; VLSI testing; devices and technology; VLSI architectures; emerging technologies and memory; system design; low power design and test; RF circuits; architecture and CAD; and design verification.
Author : Steven H. Voldman
Publisher : John Wiley & Sons
ISBN 13 : 0470012900
Total Pages : 420 pages
Book Rating : 4.4/5 (7 download)
Download or read book ESD written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2005-12-13 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon. In addition it also addresses ESD in advanced CMOS with discussions on shallow trench isolation (STI), Copper and Low K materials. Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena. Analyses the behaviour of semiconductor devices under ESD conditions. Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits. Covers ESD testing, failure criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time. Discusses the design and development implications of ESD in semiconductor technologies. An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design. Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.
