Insulating Films on Semiconductors, 1979

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Publisher :
ISBN 13 :
Total Pages : 292 pages
Book Rating : 4.:/5 (632 download)

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Book Synopsis Insulating Films on Semiconductors, 1979 by : INFOS (Conference on Insulating Films on Semiconductors)

Download or read book Insulating Films on Semiconductors, 1979 written by INFOS (Conference on Insulating Films on Semiconductors) and published by . This book was released on 1979 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Insulating Films on Semiconductors, 1979

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Author :
Publisher : Institute of Physics Publishing (GB)
ISBN 13 :
Total Pages : 320 pages
Book Rating : 4.:/5 (41 download)

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Book Synopsis Insulating Films on Semiconductors, 1979 by : Gareth Gwyn Roberts

Download or read book Insulating Films on Semiconductors, 1979 written by Gareth Gwyn Roberts and published by Institute of Physics Publishing (GB). This book was released on 1980 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Insulating Films on Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 3642682472
Total Pages : 323 pages
Book Rating : 4.6/5 (426 download)

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Book Synopsis Insulating Films on Semiconductors by : M. Schulz

Download or read book Insulating Films on Semiconductors written by M. Schulz and published by Springer Science & Business Media. This book was released on 2013-03-12 with total page 323 pages. Available in PDF, EPUB and Kindle. Book excerpt: The INFOS 81 Conference on Insulating Films on Semiconductors was held at the University of Erlangen-NUrnberg in Erlangen from 27 to 29 April 1981. This conference was a sequel to the first conference INFOS 79 held in Durham. INFOS 81 attracted 170 participants from universities, research institutes and industry. Attendants were registered from 15 nations. The biannual topical conference series will be continued by INFOS 83 to be held in Eindhoven, The Netherlands, in April 1983. The conference proceedings include all the invited (Y) and contrlDUtea (42) papers presented at the meeting. The topics range from the basic physical understanding of the properties of insulating films and their interface to semiconductors to the discussion of stability and dielectric strength as well as growing and deposition techniques which are relevant for technical applications. Strong emphasis was given to the semiconductor silicon and its native oxide; however, sessions on compound semiconductors and other insulating films also raised strong interest. The proceedings survey the present state of our understanding of the system of insulating films on semiconductors. As a new aspect of the topic, the properties of semiconductors deposited and laser processed on insulating films was in cluded for the first time.

Insulating Films on Semiconductors, 1979

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Publisher : Institute of Physics Publishing (GB)
ISBN 13 :
Total Pages : 318 pages
Book Rating : 4.X/5 (1 download)

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Book Synopsis Insulating Films on Semiconductors, 1979 by : Gareth Gwyn Roberts

Download or read book Insulating Films on Semiconductors, 1979 written by Gareth Gwyn Roberts and published by Institute of Physics Publishing (GB). This book was released on 1980 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Materials and Process Characterization

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Publisher : Academic Press
ISBN 13 : 1483217736
Total Pages : 614 pages
Book Rating : 4.4/5 (832 download)

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Book Synopsis Materials and Process Characterization by : Norman G. Einspruch

Download or read book Materials and Process Characterization written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics: Microstructure Science, Volume 6: Materials and Process Characterization addresses the problem of how to apply a broad range of sophisticated materials characterization tools to materials and processes used for development and production of very large scale integration (VLSI) electronics. This book discusses the various characterization techniques, such as Auger spectroscopy, secondary ion mass spectroscopy, X-ray topography, transmission electron microscopy, and spreading resistance. The systematic approach to the technologies of VLSI electronic materials and device manufacture are also considered. This volume is beneficial to materials scientists, chemists, and engineers who are commissioned with the responsibility of developing and implementing the production of materials and devices to support the VLSI era.

Crystalline Semiconducting Materials and Devices

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Publisher : Springer Science & Business Media
ISBN 13 : 1475799004
Total Pages : 657 pages
Book Rating : 4.4/5 (757 download)

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Book Synopsis Crystalline Semiconducting Materials and Devices by : Paul N. Butcher

Download or read book Crystalline Semiconducting Materials and Devices written by Paul N. Butcher and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 657 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is concerned primarily with the fundamental theory underlying the physical and chemical properties of crystalIine semiconductors. After basic introductory material on chemical bonding, electronic band structure, phonons, and electronic transport, some emphasis is placed on surface and interfacial properties, as weil as effects of doping with a variety of impurities. Against this background, the use of such materials in device physics is examined and aspects of materials preparation are discussed briefty. The level of presentation is suitable for postgraduate students and research workers in solid-state physics and chemistry, materials science, and electrical and electronic engineering. Finally, it may be of interest to note that this book originated in a College organized at the International Centre for Theoretical Physics, Trieste, in Spring 1984. P. N. Butcher N. H. March M. P. Tosi vii Contents 1. Bonds and Bands in Semiconductors 1 E. Mooser 1. 1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1. 2. The Semiconducting Bond . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1. 3. Bond Approach Versus Band Model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1. 4. Construction of the Localized X by Linear Combination of n Atomic Orbitals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 1. 5. The General Octet Rule . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 1. 6. The Aufbau-Principle of the Crystal Structure of Semiconductors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 1. 7. A Building Principle for Polyanionic Structures . . . . . . . . . . . . . . . . . . . . . . 29 I. H. Structural Sorting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 1. 9. Chemical Bonds and Semiconductivity in Transition-Element Compounds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 1. 10. Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 2. Electronic Band Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 G. Grosso 2. 1. Two Different Strategies for Band-Structure Calculations . . . . . . . 55 2. 2. The Tight-Binding Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Insulating Films on Semiconductors 1991, Proceedings from the 7th Biennial European Conference.

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Author :
Publisher : CRC Press
ISBN 13 : 9780750301688
Total Pages : 368 pages
Book Rating : 4.3/5 (16 download)

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Book Synopsis Insulating Films on Semiconductors 1991, Proceedings from the 7th Biennial European Conference. by : W. Eccleston

Download or read book Insulating Films on Semiconductors 1991, Proceedings from the 7th Biennial European Conference. written by W. Eccleston and published by CRC Press. This book was released on 1991-09-01 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: Insulating Films on Semiconductors 1991 covers the fundamental aspects of the properties of dielectrics/semiconductor structures, the study of high field/hot electron/radiation induced phenomena, and the developments in measurement techniques for looking at interfaces and surfaces on semiconductor materials. The volume is written for researchers in physics, materials science, electronics, and electrical engineering.

Silicon Nitride and Silicon Dioxide Thin Insulating Films

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Publisher : The Electrochemical Society
ISBN 13 : 9781566771375
Total Pages : 610 pages
Book Rating : 4.7/5 (713 download)

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Book Synopsis Silicon Nitride and Silicon Dioxide Thin Insulating Films by : M. Jamal Deen

Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by M. Jamal Deen and published by The Electrochemical Society. This book was released on 1997 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt:

High-Efficient Low-Cost Photovoltaics

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Publisher : Springer Nature
ISBN 13 : 3030228649
Total Pages : 320 pages
Book Rating : 4.0/5 (32 download)

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Book Synopsis High-Efficient Low-Cost Photovoltaics by : Vesselinka Petrova-Koch

Download or read book High-Efficient Low-Cost Photovoltaics written by Vesselinka Petrova-Koch and published by Springer Nature. This book was released on 2019-11-27 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a bird’s-eye view of the recent development trends in photovoltaics – a big business field that is rapidly growing and well on its way to maturity. The book describes current efforts to develop highly efficient, low-cost photovoltaic devices based on crystalline silicon, III–V compounds, copper indium gallium selenide (CIGS) and perovskite photovoltaic cells along with innovative, cost-competitive glass/ flexible tubular glass concentrator modules and systems, highlighting recent attempts to develop highly efficient, low-cost, flexible photovoltaic cells based on CIGS and perovskite thin films. This second edition presents, for the first time, the possible applications of perovskite modules together with Augsburger Tubular photovoltaics.

The Physics of MOS Insulators

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Publisher : Elsevier
ISBN 13 : 1483162443
Total Pages : 382 pages
Book Rating : 4.4/5 (831 download)

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Book Synopsis The Physics of MOS Insulators by : Gerald Lucovsky

Download or read book The Physics of MOS Insulators written by Gerald Lucovsky and published by Elsevier. This book was released on 2013-10-22 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Physics of MOS Insulators focuses on the experiments, research, and discussions made on MOS insulators. Divided into eight parts and having 72 chapters, the selection features the lengthy literature of contributors in the field of biochemistry who have continuously worked to highlight the structure, properties, applications, processes, experiments, and research done on MOS insulators. Scattered within the numerous chapters of the selection are experiments that are supported by lengthy discussions and data necessary to validate the claims of the authors. Although the chapters cover different topics, generally, they present how MOS insulators have captured the interest of biochemists and other individuals who are interested in this discipline. The papers generally include samples and measurements, observations, discussions, numerical representations, methodologies, conclusions, and recommendations. This book is a dependable source of information for those who are keen enough to study the physics of MOS insulators. This text is highly recommended to biochemists, students, and scholars who find this area of study interesting.

Surfaces and Interfaces: Physics and Electronics

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Publisher : Elsevier
ISBN 13 : 0444600167
Total Pages : 663 pages
Book Rating : 4.4/5 (446 download)

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Book Synopsis Surfaces and Interfaces: Physics and Electronics by : R.S. Bauer

Download or read book Surfaces and Interfaces: Physics and Electronics written by R.S. Bauer and published by Elsevier. This book was released on 2012-12-02 with total page 663 pages. Available in PDF, EPUB and Kindle. Book excerpt: Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics. The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces. The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.

Thin Films by Chemical Vapour Deposition

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Publisher : Elsevier
ISBN 13 : 1483291731
Total Pages : 720 pages
Book Rating : 4.4/5 (832 download)

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Book Synopsis Thin Films by Chemical Vapour Deposition by : C.E. Morosanu

Download or read book Thin Films by Chemical Vapour Deposition written by C.E. Morosanu and published by Elsevier. This book was released on 2016-06-22 with total page 720 pages. Available in PDF, EPUB and Kindle. Book excerpt: The explosive growth in the semiconductor industry has caused a rapid evolution of thin film materials that lend themselves to the fabrication of state-of-the-art semiconductor devices. Early in the 1960s an old research technique named chemical vapour phase deposition (CVD), which has several unique advantages, developed into the most widely used technique for thin film preparation in electronics technology. In the last 25 years, tremendous advances have been made in the science and technology of thin films prepared by means of CVD. This book presents in a single volume, an up-to-date overview of the important field of CVD processes which has never been completely reviewed previously. Contents: Part I. 1. Evolution of CVD Films. Introductory remarks. Short history of CVD thin films. II. Fundamentals. 2. Techniques of Preparing Thin Films. Electrolytic deposition techniques. Vacuum deposition techniques. Plasma deposition techniques. Liquid-phase deposition techniques. Solid-phase deposition techniques. Chemical vapour conversion of substrate. Chemical vapour deposition. Comparison between CVD and other thin film deposition techniques. 3. Chemical Processes Used in CVD. Introduction. Description of chemical reactions used in CVD. 4. Thermodynamics of CVD. Feasibility of a CVD process. Techniques for equilibrium calculations in CVD systems. Examples of thermodynamic studies of CVD systems. 5. Kinetics of CVD. Steps and control type of a CVD heterogeneous reaction. Influence of experimental parameters on thin film deposition rate. Continuous measurement of the deposition rate. Experimental methods for studying CVD kinetics. Role of homogeneous reactions in CVD. Mechanism of CVD processes. Kinetics and mechanism of dopant incorporation. Transport phenomena in CVD. Status of kinetic and mechanism investigations in CVD systems. 6. Measurement of Thin Film Thickness. Mechanical methods. Mechanical-optical methods. Optical methods. Electrical methods. Miscellaneous methods. 7. Nucleation and Growth of CVD Films. Stages in the nucleation and growth mechanism. Regimes of nucleation and growth. Nucleation theory. Dependence of nucleation on deposition parameters. Heterogeneous nucleation and CVD film structural forms. Homogeneous nucleation. Experimental techniques. Experimental results of CVD film nucleation. 8. Thin Film Structure. Techniques for studying thin film structure. Structural defects in CVD thin films. 9. Analysis of CVD Films. Analysis techniques of thin film bulk. Analysis techniques of thin film surfaces. Film composition measurement. Depth concentration profiling. 10. Properties of CVD Films. Mechanical properties. Thermal properties. Optical properties. Photoelectric properties. Electrical properties. Magnetic properties. Chemical properties. Part III. 11. Equipment and Substrates. Equipment for CVD. Safety in CVD. Substrates. 12. Preparation and Properties of Semiconducting Thin Films. Homoepitaxial semiconducting films. Heteroepitaxial semiconducting films. 13. Preparation and Properties of Amorphous Insulating Thin Films. Oxides. Nitrides and Oxynitrides. Polymeric thin films. 14. Preparation and Properties of Conductive Thin Films. Metals and metal alloys. Resistor materials. Transparent conducting films. Miscellaneous materials. 15. Preparation and Properties of Superconducting and Magnetic Thin Films. Superconducting materials. Magnetic materials. 16. Uses of CVD Thin Films. Applications in electronics and microelectronics. Applications in the field of microwaves and optoelectronics. Miscellaneous applications. Artificial heterostructures (Quantum wells, superlattices, monolayers, two-dimensional electron gases). Part V. 17. Present and Future Importance of CVD Films.

Physics and Chemistry of III-V Compound Semiconductor Interfaces

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Publisher : Springer Science & Business Media
ISBN 13 : 1468448358
Total Pages : 472 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Physics and Chemistry of III-V Compound Semiconductor Interfaces by : Carl Wilmsen

Download or read book Physics and Chemistry of III-V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.

Insulating Films on Semiconductors

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Publisher :
ISBN 13 : 9783642682483
Total Pages : 332 pages
Book Rating : 4.6/5 (824 download)

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Book Synopsis Insulating Films on Semiconductors by : Max J. Schulz

Download or read book Insulating Films on Semiconductors written by Max J. Schulz and published by . This book was released on 1981-09-01 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Internal Photoemission Spectroscopy

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Publisher : Elsevier
ISBN 13 : 9780080555898
Total Pages : 312 pages
Book Rating : 4.5/5 (558 download)

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Book Synopsis Internal Photoemission Spectroscopy by : Valeri V. Afanas'ev

Download or read book Internal Photoemission Spectroscopy written by Valeri V. Afanas'ev and published by Elsevier. This book was released on 2010-07-07 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method provides the unique capability of analysing the heterostructures relevant to the modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. In addition to the discussion of fundamental physical and technical aspects of IPE spectroscopic applications, several “hot topics are addressed. These include development of new insulating materials for advances Si MOS technology (both high-k gate insulators and low-k dielectrics for interconnect insulation), metal gate materials, development of heterostructures based on high-mobility semiconductors, etc. Thanks to a considerable activity in this field over the last few years, the recent results concerning band structure of most important interfaces involving novel materials can now be documented. - First complete description of the internal photoemission phenomena - A practical guide to internal photoemission measurements - Describes reliable energy barrier determination procedures - Surveys trap spectroscopy methods applicable to thin insulating layers - Provides an overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces - Contains a complete collection of reference data on interface band alignment for wide-bandgap insulating materials in contact with metals and semiconductors

Fundamentals Of Solar Cells

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Publisher : Elsevier
ISBN 13 : 0323145388
Total Pages : 580 pages
Book Rating : 4.3/5 (231 download)

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Book Synopsis Fundamentals Of Solar Cells by : Alan Fahrenbruch

Download or read book Fundamentals Of Solar Cells written by Alan Fahrenbruch and published by Elsevier. This book was released on 2012-12-02 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Solar Cells: Photovoltaic Solar Energy Conversion provides an introduction to the fundamental physical principles of solar cells. It aims to promote the expansion of solar photovoltaics from relatively small and specialized use to a large-scale contribution to energy supply. The book begins with a review of basic concepts such as the source of energy, the role of photovoltaic conversion, the development of photovoltaic cells, and sequence of phenomena involved in solar power generation. This is followed by separate chapters on each of the processes that take place in solar cell. These include solar input; properties of semiconductors; recombination and the flow of photogenerated carriers; charge separation and the characteristics of junction barriers; and calculation of solar efficiency. Subsequent chapters deal with the operation of specific solar cell devices such as a single-crystal homojunction (Si); a single-crystal-heterojunction/buried-homojunction (AlGaAs/GaAs); and a polycrystalline, thin-film cell (CuxS/CdS). This book is intended for upper-level graduate students who have a reasonably good understanding of solid state physics and for scientists and engineers involved in research and development of solar cells.

Official Gazette of the United States Patent and Trademark Office

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Publisher :
ISBN 13 :
Total Pages : 816 pages
Book Rating : 4.0/5 ( download)

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Book Synopsis Official Gazette of the United States Patent and Trademark Office by :

Download or read book Official Gazette of the United States Patent and Trademark Office written by and published by . This book was released on 1993 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt: