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Indium Phosphide Heterojunction Bipolar Transistors With Emitter Regrowth By Molecular Beam Epitaxy
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Book Synopsis Indium Phosphide Heterojunction Bipolar Transistors with Emitter Regrowth by Molecular Beam Epitaxy by : Dennis W. Scott
Download or read book Indium Phosphide Heterojunction Bipolar Transistors with Emitter Regrowth by Molecular Beam Epitaxy written by Dennis W. Scott and published by . This book was released on 2013 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first small-area regrown emitter InP HBT with emitter contact area wider than the 0.7 x 8 μm2 base-emitter junction demonstrated 160 GHz peak fô and simultaneous 140 GHz fmax. Further studies into the base-collector template surface preparation process produced an improved regrowth surface with near-epitaxial smoothness. A simplified, abrupt InP emitter regrowth onto this surface produces regrowth similar to what is observed for growth onto epi-ready InP substrates. The improved regrown emitter HBT with 0.7 x 8 μm2 InP emitter area is used to demonstrate a simultaneous 183 GHz fô and 165 GHz fmax.
Book Synopsis Development of Metalorganic Molecular Beam Epitaxy for the Growth of Indium(0.53) Gallium(0.47) Arsenic/indium Phosphide Heterojunction Bipolar Transistors and Quantum Well Optoelectronic Devices by : Steven Lee Jackson
Download or read book Development of Metalorganic Molecular Beam Epitaxy for the Growth of Indium(0.53) Gallium(0.47) Arsenic/indium Phosphide Heterojunction Bipolar Transistors and Quantum Well Optoelectronic Devices written by Steven Lee Jackson and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Metalorganic molecular beam epitaxy (MOMBE) offers several potential advantages over molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) for the development of high-speed/reliability C-doped In$\rm\sb{0.53}Ga\sb{0.47}$As/InP heterojunction bipolar transistors (HBTs). Improvements in reproducibility of alloy composition and layer thickness for $\rm In\sb xGa\sb{1-x}As$ and InP, which are afforded by MOMBE relative to MBE, offer clear advantages for manufacturing. The potential for reduction of the H passivation of C acceptors and substrate temperature sensitivity of the alloy composition, using CCl$\sb4$ as the C source, offers advantages relative to MOCVD. However, the lack of an efficient gaseous n-type dopant source limits the potential for scalability of MOMBE. This thesis describes recent work on the development of MOMBE for the growth of C-doped $\rm In\sb{0.53}Ga\sb{0.47}As/InP$ HBTs. Issues relevant to obtaining abrupt heterointerfaces, the development of a new gaseous Si dopant source, SiBr$\sb4$, and the sources of H passivation of C acceptors in C-doped $\rm In\sb{0.53}Ga\sb{0.47}As$ have been investigated. The use of a common Ta-baffled hydride cracker for the dissociation of AsH$\sb3$ and PH$\sb3$ at 950$\sp\circ$C was found to result in the generation of As$\sb2$, P$\sb2$, and H$\sb2$. However, severe group V memory effects were observed for P and As. Significantly faster switching was obtained, by using separate open Ta tube crackers. Single and multiple quantum well $\rm In\sb{0.53}Ga\sb{0.47}As/InP$ heterostructures containing quantum wells as narrow as 10 A exhibit intense photoluminescence and ninth order satellite peaks in resolution x-ray diffraction rocking curves. SiBr$\sb4$ has been demonstrated as an extremely efficient gaseous Si doping source which is compatible with MOMBE. Net electron concentrations of n = $\rm2.3\times10\sp{20}\ cm\sp{-3}$ have been obtained in InP grown at 450$\sp\circ$C without morphology degradation. Specific contact resistances of $\rm\rho\sb c=6\times10\sp{-8}\ \Omega$-cm$\sp{2}$ have been obtained by using nonalloyed Ti/Pt/Au contacts directly to these heavily-doped InP layers. $\rm In\sb{0.53}Ga\sb{0.47}As/InP$ HBTs using InP contact layers with comparably low specific contact resistances have been demonstrated. A blue shift in the photoluminescence peak energy of approximately 265 meV is observed for InP layers doped to n = $\rm7\times10\sp{19}\ cm\sp{-3}.$ Carbon doping of $\rm In\sb{0.53}Ga\sb{0.47}As$ in gas source molecular beam epitaxy and MOMBE using CCl$\sb4$ has been investigated. Net hole concentrations of p = $\rm1.8\times10\sp{20}\ cm\sp{-3}$ have been obtained with negligible H passivation for hole concentrations as high as p = $\rm8\times10\sp{19}\ cm\sp{-3}$. The degree of H passivation was found to be highly dependent on the AsH$\sb3$ cracking temperature with an enhanced effect at substrate temperatures ${
Book Synopsis InP-Based Materials and Devices by : Osamu Wada
Download or read book InP-Based Materials and Devices written by Osamu Wada and published by Wiley-Interscience. This book was released on 1999-04-13 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive guide to current techniques, applications, and trends in InP-based technologies. Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include: * Basic materials physics involved in a wide range of InP-based compounds. * Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE. * Hetero-interface control and dry process techniques for device fabrication. * High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications. * Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks. * Optoelectronic integration and packing for functional, low-cost modules.
Book Synopsis Ultra-Fast Silicon Bipolar Technology by : Ludwig Treitinger
Download or read book Ultra-Fast Silicon Bipolar Technology written by Ludwig Treitinger and published by Springer Science & Business Media. This book was released on 2013-03-13 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.
Download or read book InP HBTs written by B. Jalali and published by Artech House Materials Science. This book was released on 1995 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work provides a comprehensive overview of current InP HBT technology and its applications. Each chapter is written by a world-renowned expert on topics including crystal growth, processing, physics, modelling, and digital and analog circuits.
Book Synopsis International Conference on Indium Phosphide and Related Materials by :
Download or read book International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 2000 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis High Performance Indium Phosphide Based Electronic Devices Grown by Chemical Beam Epitaxy by : Gordon Orvis Munns
Download or read book High Performance Indium Phosphide Based Electronic Devices Grown by Chemical Beam Epitaxy written by Gordon Orvis Munns and published by . This book was released on 1996 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Heterostructure Bipolar Transistors by Molecular Beam Epitaxy by : Michael James Werner
Download or read book Heterostructure Bipolar Transistors by Molecular Beam Epitaxy written by Michael James Werner and published by . This book was released on 1988 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis InP/InGaAs Heterojunction Bipolar Transistors and Field Effect Transistors Grown by Gas-source Molecular Beam Epitaxy by : Hao-Chung Kuo
Download or read book InP/InGaAs Heterojunction Bipolar Transistors and Field Effect Transistors Grown by Gas-source Molecular Beam Epitaxy written by Hao-Chung Kuo and published by . This book was released on 1999 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of High-speed C-doped Base InP/InGaAs Heterojunction Bipolar Transistors Using Metalorganic Molecular Beam Epitaxy by : Sunil Thomas
Download or read book Growth and Characterization of High-speed C-doped Base InP/InGaAs Heterojunction Bipolar Transistors Using Metalorganic Molecular Beam Epitaxy written by Sunil Thomas and published by . This book was released on 1998 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Carbon-doped InP/InGaAs Heterojunction Bipolar Transistors for High Speed Applications by : Russell C. Gee
Download or read book Carbon-doped InP/InGaAs Heterojunction Bipolar Transistors for High Speed Applications written by Russell C. Gee and published by . This book was released on 1993 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Fabrication of InGaAs/InAlAs/InP Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy by : Wai Lee
Download or read book The Fabrication of InGaAs/InAlAs/InP Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy written by Wai Lee and published by . This book was released on 1986 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis International Conference on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices by :
Download or read book International Conference on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices written by and published by . This book was released on 1989 with total page 672 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Materials and Device Characterization of Indium Gallium Arsenide Pseudomorphic Base Heterojunction Bipolar Transistors by : Shahzad Akbar
Download or read book Materials and Device Characterization of Indium Gallium Arsenide Pseudomorphic Base Heterojunction Bipolar Transistors written by Shahzad Akbar and published by . This book was released on 1989 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis High-speed InP Heterojunction Bipolar Transistors and Integrated Circuits in Transferred Substrate Technology by : Tomas Krämer
Download or read book High-speed InP Heterojunction Bipolar Transistors and Integrated Circuits in Transferred Substrate Technology written by Tomas Krämer and published by . This book was released on 2010 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis InP-based Heterojunction Bipolar Transistor Technology for High Speed Devices and Circuits by : John Charles Cowles (Jr.)
Download or read book InP-based Heterojunction Bipolar Transistor Technology for High Speed Devices and Circuits written by John Charles Cowles (Jr.) and published by . This book was released on 1994 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis First International Conference on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices by : Rajendra Singh
Download or read book First International Conference on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices written by Rajendra Singh and published by . This book was released on 1989 with total page 672 pages. Available in PDF, EPUB and Kindle. Book excerpt: