Iii Nitride Semiconductors Grown By Plasma Assisted Molecular Beam Epitaxy

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Iii-nitride Semiconductor Materials

Author : Zhe Chuan Feng
Publisher : World Scientific
ISBN 13 : 1908979941
Total Pages : 442 pages
Book Rating : 4.9/5 (89 download)

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Book Synopsis Iii-nitride Semiconductor Materials by : Zhe Chuan Feng

Download or read book Iii-nitride Semiconductor Materials written by Zhe Chuan Feng and published by World Scientific. This book was released on 2006-03-20 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a

III-Nitride Semiconductor Optoelectronics

Author :
Publisher : Academic Press
ISBN 13 : 012809723X
Total Pages : 490 pages
Book Rating : 4.1/5 (28 download)

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Book Synopsis III-Nitride Semiconductor Optoelectronics by :

Download or read book III-Nitride Semiconductor Optoelectronics written by and published by Academic Press. This book was released on 2017-01-05 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored. - Contains the latest breakthrough research in III-nitride optoelectronics - Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices - Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies

Molecular Beam Epitaxy

Author : Mohamed Henini
Publisher : Elsevier
ISBN 13 : 0128121378
Total Pages : 790 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini

Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

III-Nitride Semiconductors and Their Modern Devices

Author : Bernard Gil
Publisher : Semiconductor Science and Tech
ISBN 13 : 0199681724
Total Pages : 661 pages
Book Rating : 4.1/5 (996 download)

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Book Synopsis III-Nitride Semiconductors and Their Modern Devices by : Bernard Gil

Download or read book III-Nitride Semiconductors and Their Modern Devices written by Bernard Gil and published by Semiconductor Science and Tech. This book was released on 2013-08-22 with total page 661 pages. Available in PDF, EPUB and Kindle. Book excerpt: All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.

Dilute Nitride Semiconductors

Author : Mohamed Henini
Publisher : Elsevier
ISBN 13 : 0080455999
Total Pages : 648 pages
Book Rating : 4.0/5 (84 download)

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Book Synopsis Dilute Nitride Semiconductors by : Mohamed Henini

Download or read book Dilute Nitride Semiconductors written by Mohamed Henini and published by Elsevier. This book was released on 2004-12-15 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: - This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. - It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics - Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field - Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community

Group III-Nitride Semiconductor Optoelectronics

Author : Choudhury J. Praharaj
Publisher : John Wiley & Sons
ISBN 13 : 111970863X
Total Pages : 196 pages
Book Rating : 4.1/5 (197 download)

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Book Synopsis Group III-Nitride Semiconductor Optoelectronics by : Choudhury J. Praharaj

Download or read book Group III-Nitride Semiconductor Optoelectronics written by Choudhury J. Praharaj and published by John Wiley & Sons. This book was released on 2023-11-07 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discover a comprehensive exploration of the foundations and frontiers of the optoelectronics technology of group-III nitrides and their ternary alloys In Group III-Nitride Semiconductor Optoelectronics, expert engineer Dr. Choudhury J. Praharaj delivers an insightful overview of the optoelectronic applications of group III-nitride semiconductors. The book covers all relevant aspects of optical emission and detection, including the challenges of optoelectronic integration and a detailed comparison with other material systems. The author discusses band structure and optical properties of III-nitride semiconductors, as well as the properties of their low-dimensional structures. He also describes different optoelectronic systems such as LEDs, lasers, photodetectors, and optoelectronic integrated circuits. Group III-Nitride Semiconductor Optoelectronics covers both the fundamentals of the field and the most cutting-edge discoveries. Detailed appendices contain Maxwell's equations in dielectric media and descriptions of time-dependent perturbation theory and light-matter interaction. Readers will also benefit from: A thorough introduction to the band structure and optical properties of group III-nitride semiconductors Comprehensive explorations of growth and doping of group III-nitride devices and heterostructures Practical discussions of the optical properties of low dimensional structures in group III-nitrides In-depth examinations of lasers and light-emitting diodes, other light-emitting devices, photodetectors, photovoltaics, and optoelectronic integrated circuits Concise treatments of the quantum optical properties of nitride semiconductor devices Perfect for researchers in electrical engineering, applied physics, and materials science, Group III-Nitride Semiconductor Optoelectronics is also a must-read resource for graduate students and industry practitioners in those fields seeking a state-of-the-art reference on the optoelectronics technology of group III-nitrides.

Nitride Semiconductors

Author : Pierre Ruterana
Publisher : John Wiley & Sons
ISBN 13 : 3527607404
Total Pages : 686 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis Nitride Semiconductors by : Pierre Ruterana

Download or read book Nitride Semiconductors written by Pierre Ruterana and published by John Wiley & Sons. This book was released on 2006-05-12 with total page 686 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currently the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components. This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.

Heteroepitaxy of Semiconductors

Author : John E. Ayers
Publisher : CRC Press
ISBN 13 : 1482254360
Total Pages : 660 pages
Book Rating : 4.4/5 (822 download)

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Book Synopsis Heteroepitaxy of Semiconductors by : John E. Ayers

Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2016-10-03 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Nitride Semiconductor Technology

Author : Fabrizio Roccaforte
Publisher : John Wiley & Sons
ISBN 13 : 3527825258
Total Pages : 464 pages
Book Rating : 4.5/5 (278 download)

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Book Synopsis Nitride Semiconductor Technology by : Fabrizio Roccaforte

Download or read book Nitride Semiconductor Technology written by Fabrizio Roccaforte and published by John Wiley & Sons. This book was released on 2020-07-17 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.

Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth

Author : Hadis Morkoç
Publisher : John Wiley & Sons
ISBN 13 : 3527628460
Total Pages : 1311 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth by : Hadis Morkoç

Download or read book Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 1311 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.

Wide Band Gap Semiconductor Nanowires 1

Author : Vincent Consonni
Publisher : John Wiley & Sons
ISBN 13 : 1118984307
Total Pages : 467 pages
Book Rating : 4.1/5 (189 download)

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Book Synopsis Wide Band Gap Semiconductor Nanowires 1 by : Vincent Consonni

Download or read book Wide Band Gap Semiconductor Nanowires 1 written by Vincent Consonni and published by John Wiley & Sons. This book was released on 2014-08-08 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanisms of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.

Wide Bandgap Semiconductor Materials and Devices 12

Author : J. A. Bardwell
Publisher : The Electrochemical Society
ISBN 13 : 1566778670
Total Pages : 222 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis Wide Bandgap Semiconductor Materials and Devices 12 by : J. A. Bardwell

Download or read book Wide Bandgap Semiconductor Materials and Devices 12 written by J. A. Bardwell and published by The Electrochemical Society. This book was released on 2011-04 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and devices, encompassing inorganic wide-bandgap semiconductors: III-nitrides (e. g. gallium nitride), II-oxides, SiC, diamond, II-VI, and also emerging materials such as organic-inorganic nanoscale structures.

Indium Nitride and Related Alloys

Author : Timothy David Veal
Publisher : CRC Press
ISBN 13 : 1439859612
Total Pages : 707 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis Indium Nitride and Related Alloys by : Timothy David Veal

Download or read book Indium Nitride and Related Alloys written by Timothy David Veal and published by CRC Press. This book was released on 2011-06-03 with total page 707 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.

Handbook of GaN Semiconductor Materials and Devices

Author : Wengang (Wayne) Bi
Publisher : CRC Press
ISBN 13 : 1351648055
Total Pages : 775 pages
Book Rating : 4.3/5 (516 download)

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Book Synopsis Handbook of GaN Semiconductor Materials and Devices by : Wengang (Wayne) Bi

Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 775 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Comprehensive Semiconductor Science and Technology

Author :
Publisher : Newnes
ISBN 13 : 0080932282
Total Pages : 3572 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Comprehensive Semiconductor Science and Technology by :

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Nitride Semiconductor Light-Emitting Diodes (LEDs)

Author : Jian-Jang Huang
Publisher : Woodhead Publishing
ISBN 13 : 0081019432
Total Pages : 826 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Nitride Semiconductor Light-Emitting Diodes (LEDs) by : Jian-Jang Huang

Download or read book Nitride Semiconductor Light-Emitting Diodes (LEDs) written by Jian-Jang Huang and published by Woodhead Publishing. This book was released on 2017-10-24 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors. - Features new chapters on laser lighting, addressing the latest advances on this topic - Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development - Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots - Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting - Provides a comprehensive discussion of gallium nitride on both silicon and sapphire substrates

Emerging Trends in Nanotechnology

Author : Zishan Husain Khan
Publisher : Springer Nature
ISBN 13 : 9811599041
Total Pages : 382 pages
Book Rating : 4.8/5 (115 download)

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Book Synopsis Emerging Trends in Nanotechnology by : Zishan Husain Khan

Download or read book Emerging Trends in Nanotechnology written by Zishan Husain Khan and published by Springer Nature. This book was released on 2021-02-21 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses new trends in nanotechnology. It covers a wide range of topics starting from applications of nanomaterials in perovskite solar cells, pharmacy, and dentistry to self-assembled growth of GaN nanostructures on flexible metal foils by laser molecular beam epitaxy. It also includes other interesting topics such as advancement in carbon nanotubes; processing techniques, purification and industrial applications, metal di-chalcogenides for waste water treatment and recent advancement in nanostructured-based electrochemical genosensors for pathogen detection and many more. The book will be of great interest to researchers, professionals and students working in the areas of nanomaterials and nanotechnology.