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Identifying Electronic Properties Relevant To Improving Stability In A Sih Based Cells And Overall Performance In A Si Geh Based Cells
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Book Synopsis Identifying Electronic Properties Relevant to Improving Stability in A-Si:H-based Cells and Overall Performance in A-Si, Ge:H-based Cells by : J. David Cohen
Download or read book Identifying Electronic Properties Relevant to Improving Stability in A-Si:H-based Cells and Overall Performance in A-Si, Ge:H-based Cells written by J. David Cohen and published by . This book was released on 1998 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Identifying Electronic Properties Relevant to Improving Stability in A-Si by :
Download or read book Identifying Electronic Properties Relevant to Improving Stability in A-Si written by and published by . This book was released on 1997 with total page 31 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work done during this second phase of the University of Oregon's NREL subcontract focused on degradation studies in both pure a-Si:H and a-Si, Ge:H alloys, as well as a detailed study of the interface between these two materials in a-Si:H/a-Si, Ge:H heterostructures. All samples discussed in this report were produced by the glow-discharge method and were obtained either in collaboration with United Solar Systems Corporation or with researchers at Lawrence Berkeley laboratory. First, the results from the a-Si, Ge:H degradation studies support the conclusion that considerable quantities of charged defects exist in nominally intrinsic material. Researchers found that on light-soaking, all the observed defect sub-bands increased; however, their ratios varied significantly. Second, researchers performed voltage pulse stimulated capacitance transient measurements on a-Si:H/a-Si, Ge:H heterostructure samples and found a clear signature of trapped hole emission extending over long times. Finally, researchers began comparison studies of the electronic properties of a-Si:H grown by glow discharge either with 100% silane, or with silane diluted in H2 or He gas. The results on these samples indicate that the films grown under high hydrogen dilution exhibit roughly a factor of 3 lower deep defect densities than those grown using pure silane.
Book Synopsis Identifying Electronic Properties Relevant to Improving Stability in A-Si by :
Download or read book Identifying Electronic Properties Relevant to Improving Stability in A-Si written by and published by . This book was released on 1995 with total page 27 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes work performed by the University of Oregon focusing on the characterization and evaluation of amorphous semiconductor materials produced by novel deposition conditions and/or methods. The results are based on a variety of junction capacitance techniques: admittance spectroscopy, transient photocapacitance (and photocurrent), and drive-level capacitance profiling. These methods allow the determination of deep defect densities and their energy distributions, Urbach bandtail energies, and, in some cases, [mu][tau] products for hole transport. During this phase, the authors completed several tasks: (1) they carried out measurements on a-Si, Ge:H alloy samples produced at Harvard University by a cathodic glow discharge process, measurement indicated a smaller value of ([mu][tau]){sub h} for these samples than would have been expected given their lower defect densities; (2) they characterized several hot-wire a-Si:H samples produced with varying hydrogen levels, studies indicate that hot-wire-produced a-Si:H, with H levels between 2--5 at.% should lead to mid-gap devices with superior properties; (3) they reported some results on a-Si:H glow discharge material grown under hydrogen dilution conditions. Preliminary studies point to film strain as playing a primary role for the observed differences in behavior.
Book Synopsis Identifying Electronic Properties Relevant to Improving Stability in A-Si by :
Download or read book Identifying Electronic Properties Relevant to Improving Stability in A-Si written by and published by . This book was released on 1997 with total page 31 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work done during this second phase of the University of Oregon's NREL subcontract focused on degradation studies in both pure a-Si:H and a-Si, Ge:H alloys, as well as a detailed study of the interface between these two materials in a-Si:H/a-Si, Ge:H heterostructures. All samples discussed in this report were produced by the glow-discharge method and were obtained either in collaboration with United Solar Systems Corporation or with researchers at Lawrence Berkeley laboratory. First, the results from the a-Si, Ge:H degradation studies support the conclusion that considerable quantities of charged defects exist in nominally intrinsic material. Researchers found that on light-soaking, all the observed defect sub-bands increased; however, their ratios varied significantly. Second, researchers performed voltage pulse stimulated capacitance transient measurements on a-Si:H/a-Si, Ge:H heterostructure samples and found a clear signature of trapped hole emission extending over long times. Finally, researchers began comparison studies of the electronic properties of a-Si:H grown by glow discharge either with 100% silane, or with silane diluted in H2 or He gas. The results on these samples indicate that the films grown under high hydrogen dilution exhibit roughly a factor of 3 lower deep defect densities than those grown using pure silane.
Book Synopsis Identifying Electronic Properties Relevant to Improving Stability in A-Si:H-based Cells and Overall Performance in A-Si, Ge:H-based Cells by : J. David Cohen
Download or read book Identifying Electronic Properties Relevant to Improving Stability in A-Si:H-based Cells and Overall Performance in A-Si, Ge:H-based Cells written by J. David Cohen and published by . This book was released on 1997 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work carried out during this second phase of our NREL Subcontract has been focused on degradation studies in both pure a-Si:H and the a-Si, Ge:H alloys, as well as a detailed study of the interface between these two materials in a-Si:H/a-Si, Ge:H heterostructures. All samples discussed in this report were produced by the glow discharge method. They were obtained either in collaboration with United Solar Systems Corporation or with researchers at Lawrence Berkeley Laboratory.
Book Synopsis Identifying Electronic Properties Relevant to Improving Stability in A-Si:H-based Cells and Overall Performance in A-Si, Ge:H-based Cells. Annual Subcontract Report, April 18, 1994--April 17, 1995 by :
Download or read book Identifying Electronic Properties Relevant to Improving Stability in A-Si:H-based Cells and Overall Performance in A-Si, Ge:H-based Cells. Annual Subcontract Report, April 18, 1994--April 17, 1995 written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes work performed by the University of Oregon focusing on the characterization and evaluation of amorphous semiconductor materials produced by novel deposition conditions and/or methods. The results are based on a variety of junction capacitance techniques: admittance spectroscopy, transient photocapacitance (and photocurrent), and drive-level capacitance profiling. These methods allow the determination of deep defect densities and their energy distributions, Urbach bandtail energies, and, in some cases, [mu][tau] products for hole transport. During this phase, the authors completed several tasks: (1) they carried out measurements on a-Si, Ge:H alloy samples produced at Harvard University by a cathodic glow discharge process, measurement indicated a smaller value of ([mu][tau])[sub h] for these samples than would have been expected given their lower defect densities; (2) they characterized several hot-wire a-Si:H samples produced with varying hydrogen levels, studies indicate that hot-wire-produced a-Si:H, with H levels between 2--5 at.% should lead to mid-gap devices with superior properties; (3) they reported some results on a-Si:H glow discharge material grown under hydrogen dilution conditions. Preliminary studies point to film strain as playing a primary role for the observed differences in behavior.
Book Synopsis Identifying Electronic Properties Relevant to Improving the Performance and Stability of Amorphous Silicon Based Mid-Gap and Low-Gap Cells by :
Download or read book Identifying Electronic Properties Relevant to Improving the Performance and Stability of Amorphous Silicon Based Mid-Gap and Low-Gap Cells written by and published by . This book was released on 2002 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes our experimental studies which have been concentrated in roughly five areas. Specifically: (1) We have examined a?Si:H grown very close to the microcrystalline phase boundary, so-called''edge material, '' to help understand why such material is more stable with respect to light-induced degradation; (2) We have also studied the electronic properties, and degradation characteristics of mixed phase material that is mostly a?Si:H, but which contains a significant microcrystalline component; (3) We have examined the electronic properties of high deposition rate material. These studies have included both moderately high deposition rate material (up to 6/s) produced by the PECVD growth method, and extremely high deposition rate material (up to 130/s) produced by the HWCVD growth method. (4) We have examined series of a-Si, Ge:H alloys from several sources. In one extensive series of studies we examined low Ge fraction alloys in an attempt to learn more about the fundamentals of degradation in general. In a couple other studies we evaluated the properties of a-Si, Ge:H alloys produced by methods we had not previously examined. (5) Finally, for three different types of samples we compared basic material properties with companion cell performance data. This was carried out in each case on series of samples for which one or more specific deposition parameters were varied systematically.
Book Synopsis Stability of Amorphous Silicon Alloy Materials and Devices by : B. L. Stafford
Download or read book Stability of Amorphous Silicon Alloy Materials and Devices written by B. L. Stafford and published by American Institute of Physics. This book was released on 1987 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices. Annual Report, May 31, 1995--May 30, 1996 by :
Download or read book Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices. Annual Report, May 31, 1995--May 30, 1996 written by and published by . This book was released on 1997 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report represents the progress achieved during the second year of our program to develop a-Si:H and a-(Si, Ge):H materials and devices with better stability by changing the chemistry of the growth technique. During this year, we have shifted our emphasis from cells made on tin oxide substrates (superstrate cells) to cells made on stainless steel substrates (substrate cells). The basic growth technique is to use a remote plasma beam of H or He, created by a low pressure ECR discharge, to create both growth and ion bombardment and/or etching during the growth of the films and devices. By inducing ion bombardment and etching, we can induce a more perfect lattice structure, and thereby improve the properties of the films and devices.
Book Synopsis Comprehensive Research on the Stability and Electronic Properties of A-Si:H and A-SiGe:H Alloys and Devices by : Vikram Dalal
Download or read book Comprehensive Research on the Stability and Electronic Properties of A-Si:H and A-SiGe:H Alloys and Devices written by Vikram Dalal and published by . This book was released on 1995 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Solar Energy written by Christoph Richter and published by Springer. This book was released on 2012-11-29 with total page 744 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gathering some 30 entries from the Encyclopedia of Sustainability Science and Technology, this book presents fundamental principles and technologies for sustainably harnessing solar energy. Covers photovoltaics, solar thermal energy, solar radiation and more.
Book Synopsis Research on the Stability, Electronic Properties, and Structure of A-Si:H and Its Alloys by :
Download or read book Research on the Stability, Electronic Properties, and Structure of A-Si:H and Its Alloys written by and published by . This book was released on 1992 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1991 with total page 942 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Engineering Index Annual written by and published by . This book was released on 1992 with total page 2264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.
Download or read book Metals Abstracts written by and published by . This book was released on 1982 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Amorphous and Microcrystalline Silicon Applied in Very Thin Tandem Solar Cells by : Sandra Schicho
Download or read book Amorphous and Microcrystalline Silicon Applied in Very Thin Tandem Solar Cells written by Sandra Schicho and published by Forschungszentrum Jülich. This book was released on 2011 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Handbook of Photovoltaic Silicon by : Deren Yang
Download or read book Handbook of Photovoltaic Silicon written by Deren Yang and published by Springer. This book was released on 2019-11-28 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..
