Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Download Hydrogen Related Defects In Crystalline Semiconductors full books in PDF, epub, and Kindle. Read online Hydrogen Related Defects In Crystalline Semiconductors ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author : Stefan K.. Estreicher
Publisher :
ISBN 13 :
Total Pages : 93 pages
Book Rating : 4.:/5 (174 download)
Download or read book Hydrogen-related Defects in Crystalline Semiconductors written by Stefan K.. Estreicher and published by . This book was released on 1995 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Stefan K. Estreicher
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (174 download)
Download or read book Hydrogen Related Defects in Crystalline Semiconductors written by Stefan K. Estreicher and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Stephen J. Pearton
Publisher : Springer Science & Business Media
ISBN 13 : 3642847781
Total Pages : 374 pages
Book Rating : 4.6/5 (428 download)
Download or read book Hydrogen in Crystalline Semiconductors written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: vgl. Hardcoverausgabe.
Author : Kazuo Morigaki
Publisher : CRC Press
ISBN 13 : 9814411485
Total Pages : 213 pages
Book Rating : 4.8/5 (144 download)
Download or read book Light-Induced Defects in Semiconductors written by Kazuo Morigaki and published by CRC Press. This book was released on 2014-09-13 with total page 213 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications.
Author : M. Stutzmann
Publisher : Elsevier
ISBN 13 : 0444598839
Total Pages : 598 pages
Book Rating : 4.4/5 (445 download)
Download or read book Hydrogen in Semiconductors written by M. Stutzmann and published by Elsevier. This book was released on 2012-12-02 with total page 598 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account. This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area.
Download or read book Hydrogen-related Effects in Crystalline Semiconductors written by and published by . This book was released on 1988 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent experimental and theoretical information regarding the states of hydrogen in crystalline semiconductors is reviewed. The abundance of results illustrates that hydrogen does not preferentially occupy a few specific lattice sites but that it binds to native defects and impurities, forming a large variety of neutral and electrically active complexes. The study of hydrogen passivated shallow acceptors and donors and of partially passivated multivalent acceptors has yielded information on the electronic and real space structure and on the chemical composition of these complexes. Infrared spectroscopy, ion channeling, hydrogen isotope substitution and electric field drift experiments have shown that both static trigonal complexes as well as centers with tunneling hydrogen exist. Total energy calculations indicate that the charge state of the hydrogen ion which leads to passivation dominates, i.e., H in p-type and H/sup /minus// in n-type crystals. Recent theoretical calculations indicate that is unlikely for a large fraction of the atomic hydrogen to exist in its neutral state, a result which is consistent with the total absence of any Electron Paramagnetic Resonance (EPR) signal. An alternative explanation for this result is the formation of H2. Despite the numerous experimental and theoretical results on hydrogen-related effects in Ge and Si there remains a wealth of interesting physics to be explored, especially in compound and alloy semiconductors. 6 refs., 6 figs.
Author :
Publisher : Academic Press
ISBN 13 : 0128019409
Total Pages : 458 pages
Book Rating : 4.1/5 (28 download)
Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors
Author : Daniel M. Fleetwood
Publisher : CRC Press
ISBN 13 : 1420043773
Total Pages : 772 pages
Book Rating : 4.4/5 (2 download)
Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
Author : Jacques I. Pankove
Publisher : Academic Press
ISBN 13 : 0080864317
Total Pages : 655 pages
Book Rating : 4.0/5 (88 download)
Download or read book Hydrogen in Semiconductors written by Jacques I. Pankove and published by Academic Press. This book was released on 1991-04-23 with total page 655 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference
Author :
Publisher : Academic Press
ISBN 13 : 008086449X
Total Pages : 449 pages
Book Rating : 4.0/5 (88 download)
Download or read book Identification of Defects in Semiconductors written by and published by Academic Press. This book was released on 1998-10-27 with total page 449 pages. Available in PDF, EPUB and Kindle. Book excerpt: GENERAL DESCRIPTION OF THE SERIESSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUMEThis volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.
Author : D. B. Holt
Publisher : Cambridge University Press
ISBN 13 : 1139463594
Total Pages : 625 pages
Book Rating : 4.1/5 (394 download)
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Author : Peter Johannesen
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (471 download)
Download or read book Hydrogen-related Defects in Crystalline Silicon Studied with Electron Paramagnetic Resonance written by Peter Johannesen and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yutaka Yoshida
Publisher : Springer
ISBN 13 : 4431558004
Total Pages : 498 pages
Book Rating : 4.4/5 (315 download)
Download or read book Defects and Impurities in Silicon Materials written by Yutaka Yoshida and published by Springer. This book was released on 2016-03-30 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Author :
Publisher : Academic Press
ISBN 13 : 0080864430
Total Pages : 335 pages
Book Rating : 4.0/5 (88 download)
Download or read book Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization written by and published by Academic Press. This book was released on 1997-06-12 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Author : Ole Andersen
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (643 download)
Download or read book Electrical Properties of Hydrogen-related Defects in Crystalline Silicon written by Ole Andersen and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Marianne Cureg Tarun
Publisher :
ISBN 13 : 9781267477095
Total Pages : pages
Book Rating : 4.4/5 (77 download)
Download or read book Hydrogen and Related Defects in Oxide Semiconductors written by Marianne Cureg Tarun and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxide semiconductors are an interesting class of materials which occur in a variety of crystal structures and exhibit diverse electronic and optical properties. This thesis is primarily focused on investigating defects in zinc oxide (ZnO) and strontium titanate (SrTiO3), two important wide-bandgap oxide semiconductors.
Author :
Publisher : Academic Press
ISBN 13 : 0080864562
Total Pages : 445 pages
Book Rating : 4.0/5 (88 download)
Download or read book Nonlinear Optics in Semiconductors I written by and published by Academic Press. This book was released on 1998-10-22 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
