Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Hydrogen In Crystalline Semiconductors
Download Hydrogen In Crystalline Semiconductors full books in PDF, epub, and Kindle. Read online Hydrogen In Crystalline Semiconductors ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Hydrogen in Crystalline Semiconductors by : Stephen J. Pearton
Download or read book Hydrogen in Crystalline Semiconductors written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: vgl. Hardcoverausgabe.
Book Synopsis Hydrogen in Semiconductors by : M. Stutzmann
Download or read book Hydrogen in Semiconductors written by M. Stutzmann and published by Elsevier. This book was released on 2012-12-02 with total page 598 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account. This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area.
Book Synopsis Hydrogen-related Effects in Crystalline Semiconductors by :
Download or read book Hydrogen-related Effects in Crystalline Semiconductors written by and published by . This book was released on 1988 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent experimental and theoretical information regarding the states of hydrogen in crystalline semiconductors is reviewed. The abundance of results illustrates that hydrogen does not preferentially occupy a few specific lattice sites but that it binds to native defects and impurities, forming a large variety of neutral and electrically active complexes. The study of hydrogen passivated shallow acceptors and donors and of partially passivated multivalent acceptors has yielded information on the electronic and real space structure and on the chemical composition of these complexes. Infrared spectroscopy, ion channeling, hydrogen isotope substitution and electric field drift experiments have shown that both static trigonal complexes as well as centers with tunneling hydrogen exist. Total energy calculations indicate that the charge state of the hydrogen ion which leads to passivation dominates, i.e., H in p-type and H/sup /minus// in n-type crystals. Recent theoretical calculations indicate that is unlikely for a large fraction of the atomic hydrogen to exist in its neutral state, a result which is consistent with the total absence of any Electron Paramagnetic Resonance (EPR) signal. An alternative explanation for this result is the formation of H2. Despite the numerous experimental and theoretical results on hydrogen-related effects in Ge and Si there remains a wealth of interesting physics to be explored, especially in compound and alloy semiconductors. 6 refs., 6 figs.
Book Synopsis Hydrogen-related Defects in Crystalline Semiconductors by : Stefan K.. Estreicher
Download or read book Hydrogen-related Defects in Crystalline Semiconductors written by Stefan K.. Estreicher and published by . This book was released on 1995 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Hydrogen Related Defects in Crystalline Semiconductors by : Stefan K. Estreicher
Download or read book Hydrogen Related Defects in Crystalline Semiconductors written by Stefan K. Estreicher and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Hydrogen in Semiconductors by : Jacques I. Pankove
Download or read book Hydrogen in Semiconductors written by Jacques I. Pankove and published by Academic Press. This book was released on 1991-04-23 with total page 655 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference
Book Synopsis Hydrogen in semiconductors : bulk and surface properties ; proceedings of the sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27 - 31 August 1990 by : Martin Stutzmann
Download or read book Hydrogen in semiconductors : bulk and surface properties ; proceedings of the sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27 - 31 August 1990 written by Martin Stutzmann and published by . This book was released on 1991 with total page 581 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hydrogen in Semiconductors II written by and published by Academic Press. This book was released on 1999-05-05 with total page 541 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Provides the most in-depth coverage of hydrogen in silicon available in a single source Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors Combines both experimental and theoretical studies to form a comprehensive reference
Book Synopsis Hydrogen in Compound Semiconductors by : S.J. Pearton
Download or read book Hydrogen in Compound Semiconductors written by S.J. Pearton and published by Trans Tech Publications Ltd. This book was released on 1993-12-03 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt: State-of-the-art reviews on all the major areas of interest are brought together in this book, namely the role of hydrogen during epitaxial growth, its entry into the material during processing, its subsequent diffusivity and bonding with dopants, other impurities or defects, its effect on device performance and reliability and positive uses for hydrogen in passivating surfaces.
Book Synopsis Deep Centers in Semiconductors by : Sokrates T. Pantelides
Download or read book Deep Centers in Semiconductors written by Sokrates T. Pantelides and published by CRC Press. This book was released on 1992-11-30 with total page 952 pages. Available in PDF, EPUB and Kindle. Book excerpt: Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR
Book Synopsis Topics in Growth and Device Processing of III-V Semiconductors by : S. J. Pearton
Download or read book Topics in Growth and Device Processing of III-V Semiconductors written by S. J. Pearton and published by World Scientific. This book was released on 1996 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
Book Synopsis Defects in Silicon: Hydrogen by : J. Weber
Download or read book Defects in Silicon: Hydrogen written by J. Weber and published by Elsevier Science. This book was released on 1999-05-19 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present volume contains most of the papers presented at the Symposium A 'Defects in Silicon: Hydrogen'. The symposium took place at the 1998 Spring Meeting of the European Materials Research Society from June 16-19 1998, Strasbourg, France, and was devoted to the fundamental aspects of hydrogen in crystalline silicon and their influence on silicon technology. The two-and-a-half day scientific program included 13 invited and 35 contributed papers.
Book Synopsis Light-Induced Defects in Semiconductors by : Kazuo Morigaki
Download or read book Light-Induced Defects in Semiconductors written by Kazuo Morigaki and published by CRC Press. This book was released on 2014-09-13 with total page 213 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications.
Book Synopsis Hydrogen-bond Specific Materials Modification in Group IV Semiconductors by :
Download or read book Hydrogen-bond Specific Materials Modification in Group IV Semiconductors written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Executive summary Semiconductor dielectric crystals consist of two fundamental components: lattice atoms and electrons. The former component provides a crystalline structure that can be disrupted by various defects or the presence of an interface, or by transient oscillations known as phonons. The latter component produces an energetic structure that is responsible for the optical and electronic properties of the material, and can be perturbed by lattice defects or by photo-excitation. Over the period of this project, August 15, 1999 to March 31, 2015, a persistent theme has been the elucidation of the fundamental role of defects arising from the presence of radiation damage, impurities (in particular, hydrogen), localized strain or some combination of all three. As our research effort developed and evolved, we have experienced a few title changes, which reflected this evolution. Throughout the project, ultrafast lasers usually in a pump-probe configuration provided the ideal means to perturb and study semiconductor crystals by both forms of excitation, vibrational (phonon) and electronic (photon). Moreover, we have found in the course of this research that there are many interesting and relevant scientific questions that may be explored when phonon and photon excitations are controlled separately. Our early goals were to explore the dynamics of bond-selective vibrational excitation of hydrogen from point defects and impurities in crystalline and amorphous solids, initiating an investigation into the behavior of hydrogen isotopes utilizing a variety of ultrafast characterization techniques, principally transient bleaching spectroscopy to experimentally obtain vibrational lifetimes. The initiative could be divided into three related areas: (a) investigation of the change in electronic structure of solids due to the presence of hydrogen defect centers, (b) dynamical studies of hydrogen in materials and (c) characterization and stability of metastable hydrogen impurity states under transient compression. This research focused on the characterization of photon and ion stimulated hydrogen related defect and impurity reactions and migration in solid state matter, which requires a detailed understanding of the rates and pathways of vibrational energy flow, of the transfer channels and of the coupling mechanisms between local vibrational modes (LVMs) and phonon bath as well as the electronic system of the host material. It should be stressed that researchers at Vanderbilt and William and Mary represented a unique group with a research focus and capabilities for low temperature creation and investigation of such material systems. Later in the program, we carried out a vigorous research effort addressing the roles of defects, interfaces, and dopants on the optical and electronic characteristics of semiconductor crystals, using phonon generation by means of ultrafast coherent acoustic phonon (CAP) spectroscopy, nonlinear characterization using second harmonic generation (SHG), and ultrafast pump-and-probe reflectivity and absorption measurements. This program featured research efforts from hydrogen defects in silicon alone to other forms of defects such as interfaces and dopant layers, as well as other important semiconducting systems. Even so, the emphasis remains on phenomena and processes far from equilibrium, such as hot electron effects and travelling localized phonon waves. This program relates directly to the mission of the Department of Energy. Knowledge of the rates and pathways of vibrational energy flow in condensed matter is critical for understanding dynamical processes in solids including electronically, optically and thermally stimulated defect and impurity reactions and migration. The ability to directly probe these pathways and rates allows tests of theory and scaling laws at new levels of precision. Hydrogen embedded in model crystalline semiconductors and metal oxides is of particular interest, since the associated ...
Book Synopsis Properties of Amorphous Hydrogenated Silicon Heterojunctions with Other Crystalline Semiconductors and Their Applications by : Siyong Wu
Download or read book Properties of Amorphous Hydrogenated Silicon Heterojunctions with Other Crystalline Semiconductors and Their Applications written by Siyong Wu and published by . This book was released on 1994 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Hydrogen in Disordered and Amorphous Solids by : Gust Bambakidis Jr.
Download or read book Hydrogen in Disordered and Amorphous Solids written by Gust Bambakidis Jr. and published by Springer. This book was released on 2013-12-19 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the second volume in the NATO ASI series dealing with the topic of hydrogen in solids. The first (V. B76, Metal Hydrides) appeared five years ago and focussed primarily on crystalline phases of hydrided metallic systems. In the intervening period, the amorphous solid state has become an area of intense research activity, encompassing both metallic and non-metallic, e.g. semiconducting, systems. At the same time the problem of storage of hydrogen, which motivated the first ASI, continues to be important. In the case of metallic systems, there were early indications that metallic glasses and disordered alloys may be more corrosion resistant, less susceptible to embrittlement by hydrogen and have a higher hydrogen mobility than ordered metals or intermetallics. All of these properties are desirable for hydrogen storage. Subsequent research has shown that thermodynamic instability is a severe problem in many amorphous metal hydrides. The present ASI has provided an appropriate forum to focus on these issues.
Book Synopsis Nonlinear Optics in Semiconductors I by :
Download or read book Nonlinear Optics in Semiconductors I written by and published by Academic Press. This book was released on 1998-10-22 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
