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Author : Paul Heremans
Publisher :
ISBN 13 :
Total Pages : 275 pages
Book Rating : 4.:/5 (731 download)
Download or read book Hot-carrier Phenomena in MOS Field-effect Transistors written by Paul Heremans and published by . This book was released on 1990 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Cheng Wang
Publisher : Springer Science & Business Media
ISBN 13 : 1468485474
Total Pages : 345 pages
Book Rating : 4.4/5 (684 download)
Download or read book Hot Carrier Design Considerations for MOS Devices and Circuits written by Cheng Wang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt: As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers today is to harness the hot-carrier effects so that, without sacrificing product performance, degradation can be kept to a minimum and a reli able design obtained. To accomplish this, the physical mechanisms re sponsible for the degradations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques. It may also be considered as a reference book for graduate students who have some research interests in this excit ing, yet sometime controversial, field.
Author : Eiji Takeda
Publisher : Elsevier
ISBN 13 : 0080926223
Total Pages : 329 pages
Book Rating : 4.0/5 (89 download)
Download or read book Hot-Carrier Effects in MOS Devices written by Eiji Takeda and published by Elsevier. This book was released on 1995-11-28 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject
Author : Eiji Takeda
Publisher : Academic Press
ISBN 13 : 0126822409
Total Pages : 329 pages
Book Rating : 4.1/5 (268 download)
Download or read book Hot-Carrier Effects in MOS Devices written by Eiji Takeda and published by Academic Press. This book was released on 1995 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject
Author : Tibor Grasser
Publisher : Springer
ISBN 13 : 3319089943
Total Pages : 518 pages
Book Rating : 4.3/5 (19 download)
Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Author : Yusuf Leblebici
Publisher : Springer Science & Business Media
ISBN 13 : 1461532507
Total Pages : 223 pages
Book Rating : 4.4/5 (615 download)
Download or read book Hot-Carrier Reliability of MOS VLSI Circuits written by Yusuf Leblebici and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.
Author : Paul Richman
Publisher : Wiley-Interscience
ISBN 13 :
Total Pages : 280 pages
Book Rating : 4.3/5 (91 download)
Download or read book MOS Field-effect Transistors and Integrated Circuits written by Paul Richman and published by Wiley-Interscience. This book was released on 1973 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 956 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1987 with total page 956 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot-Carrier Effects on Total Dose Irradiated 65 Nm N-Type Metal-Oxide-Semiconductor Field-Effect Transistors*Supported by the National Natural Science Foundation of China Under Grant Nos 11475255, U1532261 and 11505282 written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract : The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field-effect transistors (nMOSFETs) is investigated. Experimental results show that hot-carrier degradations on irradiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation (STI). The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect.
Author : Hisham Haddara
Publisher : Springer Science & Business Media
ISBN 13 : 1461313554
Total Pages : 240 pages
Book Rating : 4.4/5 (613 download)
Download or read book Characterization Methods for Submicron MOSFETs written by Hisham Haddara and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.
Author : Francis Balestra
Publisher : Springer Science & Business Media
ISBN 13 : 1475733186
Total Pages : 267 pages
Book Rating : 4.4/5 (757 download)
Download or read book Device and Circuit Cryogenic Operation for Low Temperature Electronics written by Francis Balestra and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.
Author :
Publisher :
ISBN 13 :
Total Pages : 320 pages
Book Rating : 4.:/5 (318 download)
Download or read book Hitachi Review written by and published by . This book was released on 1994 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Beginning with the issue of Vol. 47, No. 2 (April 1998), the full-page edition of Hitachi Review has been available only on...web page in place of the conventional publication.
Author :
Publisher : ASM International
ISBN 13 : 0871707454
Total Pages : 162 pages
Book Rating : 4.8/5 (717 download)
Download or read book Microelectronic Failure Analysis Desk Reference written by and published by ASM International. This book was released on 2001-01-01 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: Developed by the Electronic Device Failure Analysis Society (EDFAS) Publications Committee.
Author : Santanu Kundu
Publisher : CRC Press
ISBN 13 : 1466565276
Total Pages : 388 pages
Book Rating : 4.4/5 (665 download)
Download or read book Network-on-Chip written by Santanu Kundu and published by CRC Press. This book was released on 2018-09-03 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses the Challenges Associated with System-on-Chip Integration Network-on-Chip: The Next Generation of System-on-Chip Integration examines the current issues restricting chip-on-chip communication efficiency, and explores Network-on-chip (NoC), a promising alternative that equips designers with the capability to produce a scalable, reusable, and high-performance communication backbone by allowing for the integration of a large number of cores on a single system-on-chip (SoC). This book provides a basic overview of topics associated with NoC-based design: communication infrastructure design, communication methodology, evaluation framework, and mapping of applications onto NoC. It details the design and evaluation of different proposed NoC structures, low-power techniques, signal integrity and reliability issues, application mapping, testing, and future trends. Utilizing examples of chips that have been implemented in industry and academia, this text presents the full architectural design of components verified through implementation in industrial CAD tools. It describes NoC research and developments, incorporates theoretical proofs strengthening the analysis procedures, and includes algorithms used in NoC design and synthesis. In addition, it considers other upcoming NoC issues, such as low-power NoC design, signal integrity issues, NoC testing, reconfiguration, synthesis, and 3-D NoC design. This text comprises 12 chapters and covers: The evolution of NoC from SoC—its research and developmental challenges NoC protocols, elaborating flow control, available network topologies, routing mechanisms, fault tolerance, quality-of-service support, and the design of network interfaces The router design strategies followed in NoCs The evaluation mechanism of NoC architectures The application mapping strategies followed in NoCs Low-power design techniques specifically followed in NoCs The signal integrity and reliability issues of NoC The details of NoC testing strategies reported so far The problem of synthesizing application-specific NoCs Reconfigurable NoC design issues Direction of future research and development in the field of NoC Network-on-Chip: The Next Generation of System-on-Chip Integration covers the basic topics, technology, and future trends relevant to NoC-based design, and can be used by engineers, students, and researchers and other industry professionals interested in computer architecture, embedded systems, and parallel/distributed systems.
Author : Mingliang (Michael) Liu
Publisher : Elsevier
ISBN 13 : 0080458769
Total Pages : 332 pages
Book Rating : 4.0/5 (84 download)
Download or read book Demystifying Switched Capacitor Circuits written by Mingliang (Michael) Liu and published by Elsevier. This book was released on 2006-06-12 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book helps engineers to grasp fundamental theories and design principles by presenting physical and intuitive explanations of switched-capacitor circuits. Numerous circuit examples are discussed and the author emphasizes the most important and fundamental principles involved in implementing state-of-the-art switched-capacitor circuits for analog signal processing and power management applications. Throughout the book, the author presents numerous step-by-step tutorials and gives practical design examples.While some quantitative analysis is necessary to understand underlying concepts, tedious mathematical equations and formal proofs are avoided. An intuitive appreciation for switched-capacitor circuits is achieved.Much of the existing information on contemporary switched-capacitor circuit applications is in the form of applications notes and data sheets for various switched-capacitor ICs. This book compiles such information in a single volume and coherently organizes and structures it.The author has his own website at www.mingliangliu.com * Step-by-step tutorials which emphasize the most fundamental principals of switched-capacitor circuits * Few tedious mathematical equations * The first easy-to-understand compilation on this subject--most information available is not very cohesive
Author : Tejinder Gandhi
Publisher : ASM International
ISBN 13 : 1627082468
Total Pages : 750 pages
Book Rating : 4.6/5 (27 download)
Download or read book Microelectronics Fialure Analysis Desk Reference, Seventh Edition written by Tejinder Gandhi and published by ASM International. This book was released on 2019-11-01 with total page 750 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Electronic Device Failure Analysis Society proudly announces the Seventh Edition of the Microelectronics Failure Analysis Desk Reference, published by ASM International. The new edition will help engineers improve their ability to verify, isolate, uncover, and identify the root cause of failures. Prepared by a team of experts, this updated reference offers the latest information on advanced failure analysis tools and techniques, illustrated with numerous real-life examples. This book is geared to practicing engineers and for studies in the major area of power plant engineering. For non-metallurgists, a chapter has been devoted to the basics of material science, metallurgy of steels, heat treatment, and structure-property correlation. A chapter on materials for boiler tubes covers composition and application of different grades of steels and high temperature alloys currently in use as boiler tubes and future materials to be used in supercritical, ultra-supercritical and advanced ultra-supercritical thermal power plants. A comprehensive discussion on different mechanisms of boiler tube failure is the heart of the book. Additional chapters detailing the role of advanced material characterization techniques in failure investigation and the role of water chemistry in tube failures are key contributions to the book.
Author : Chih-Tang Sah
Publisher : World Scientific Publishing Company
ISBN 13 : 9813103493
Total Pages : 1040 pages
Book Rating : 4.8/5 (131 download)
Download or read book Fundamentals of Solid State Electronics written by Chih-Tang Sah and published by World Scientific Publishing Company. This book was released on 1991-10-30 with total page 1040 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is perhaps the most comprehensive undergraduate textbook on the fundamental aspects of solid state electronics. It presents basic and state-of-the-art topics on materials physics, device physics, and basic circuit building blocks not covered by existing textbooks on the subject. Each topic is introduced with a historical background and motivations of device invention and circuit evolution. Fundamental physics is rigorously discussed with minimum need of tedious algebra and advanced mathematics. Another special feature is a systematic classification of fundamental mechanisms not found even in advanced texts. It bridges the gap between solid state device physics covered here with what students have learnt in their first two years of study. Used very successfully in a one-semester introductory core course for electrical and other engineering, materials science and physics junior students, the second part of each chapter is also used in an advanced undergraduate course on solid state devices. The inclusion of previously unavailable analyses of the basic transistor digital circuit building blocks and cells makes this an excellent reference for engineers to look up fundamental concepts and data, design formulae, and latest devices such as the GeSi heterostructure bipolar transistors. This book is also available as a set with Fundamentals of Solid-State Electronics — Study Guide and Fundamentals of Solid-State Electronics — Solution Manual.
