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Homogeneity Improvement Of Inas Gaas Self Assembled Quantum Dots Grown By Molecular Beam Epitaxy
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Book Synopsis Homogeneity Improvement of InAs/GaAs Self-assembled Quantum Dots Grown by Molecular Beam Epitaxy by : Suwit Kiravittaya
Download or read book Homogeneity Improvement of InAs/GaAs Self-assembled Quantum Dots Grown by Molecular Beam Epitaxy written by Suwit Kiravittaya and published by . This book was released on 2002 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Self-Assembled Quantum Dots by : Zhiming M Wang
Download or read book Self-Assembled Quantum Dots written by Zhiming M Wang and published by Springer Science & Business Media. This book was released on 2007-11-29 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: This multidisciplinary book provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Coverage also includes current device applications such as quantum dot lasers and detectors, as well as future applications to quantum information processing. The book will serve as a reference for anyone working with or planning to work with quantum dots.
Book Synopsis Mechanisms Governing the Growth of Self-assembled Quantum Dots by : Bruno J. Riel
Download or read book Mechanisms Governing the Growth of Self-assembled Quantum Dots written by Bruno J. Riel and published by . This book was released on 2002 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: We produced self-assembled quantum dot (QD) samples of InAs on GaAs by molecular beam epitaxy (MBE). With these, we explored growth effects as a function of InAs coverage for three arsenic pressures, and as a function of arsenic pressure at a specific InAs coverage. During growth, the samples were studied using reflection high energy electron diffraction (RHEED). These RHEED measurements were compared to low energy electron diffraction (LEED) measurements. To perform this ex-situ LEED characterisation, some samples were covered with an amorphous arsenic cap. This cap was thermally evaporated producing a clean, non-oxidised surface that was studied using LEED. We obtained non-ambiguous identification of the GaAs (001) surface reconstructions as well as timing information for the 2D to 3D transition during the growth of InAs on GaAs. Post growth characterisation of two sets of self-assembled QD samples, twelve samples in all, revealed the following: As a function of increasing the arsenic pressure used in QD growth, the photoluminescence (PL) of capped QDs is first redshifted at low arsenic pressures, and then blueshifted at high arsenic pressures. Scanning electron microscopy and atomic force microscopy of uncapped QDs show that as the arsenic pressure increases, the QD density increases while the average QD width and height decrease monotonically; these trends are consistent with the shift in PL for the high arsenic pressure samples, but are inconsistent with the shift in PL for the low pressure samples. This leads us to proposing a mechanism by which QDs may be modified as they are overgrown with capping material. We discuss the effects of adjusting the arsenic pressure on the formation of QDs and the mechanism by which QDs may be modified during capping.
Book Synopsis Self-Assembled InGaAs/GaAs Quantum Dots by :
Download or read book Self-Assembled InGaAs/GaAs Quantum Dots written by and published by Academic Press. This book was released on 1999-03-29 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major current subjects in the semiconductor research field.The atom-like density of states in quantum dots is expected to drastically improve semiconductor laser performance, and to develop new optical devices. However, since the first theoretical prediction for its great possibilities was presented in 1982, due to the difficulty of their fabrication process. Recently, the advent of self-organized quantum dots has made it possible to apply the results in important optical devices, and further progress is expected in the near future.The authors, working for Fujitsu Laboratories, are leading this quantum-dot research field. In this volume, they describe the state of the art in the entire field, with particular emphasis on practical applications.
Book Synopsis Growth of In(Ga)As/GaAs Self-organized Quantum Dots and Their Application to High-speed Lasers and Spin-polarized Light Sources by : Siddhārtha Ghosha
Download or read book Growth of In(Ga)As/GaAs Self-organized Quantum Dots and Their Application to High-speed Lasers and Spin-polarized Light Sources written by Siddhārtha Ghosha and published by . This book was released on 2003 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Size Control of Self-assembled CdSe Quantum Dots Grown by Molecular Beam Epitaxy by :
Download or read book Size Control of Self-assembled CdSe Quantum Dots Grown by Molecular Beam Epitaxy written by and published by . This book was released on 2003 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Exploring Single Hole States in InAs/GaAs Quantum Dots and Quantum Dot Molecules Under 2-D Electric Fields by : Xiangyu Ma
Download or read book Exploring Single Hole States in InAs/GaAs Quantum Dots and Quantum Dot Molecules Under 2-D Electric Fields written by Xiangyu Ma and published by . This book was released on 2019 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: InAs/GaAs quantum dots (QDs) and quantum dot molecules (QDMs) are self-assembled semiconductor nanostructures that can trap a single electron or hole in a 3-D potential-well. Grown by molecular beam epitaxy (MBE), they have excellent optical qualities that can be used in applications for quantum information processing and quantum computing. Specifically, hole spins in a single QD/QDM have longer decoherence time than electron spins due to the lack of hyperfine interaction, making hole spins a great qubit candidate. However, many challenges such as QD growth, device integration, and spin manipulation inhibit the scalability of a hole-spin-based quantum information platform. A deeper understanding of the hole spin physics and the QD/QDM material system is needed to advance device engineering opportunities.
Book Synopsis Lateral Alignment of Epitaxial Quantum Dots by : Oliver G. Schmidt
Download or read book Lateral Alignment of Epitaxial Quantum Dots written by Oliver G. Schmidt and published by Springer Science & Business Media. This book was released on 2007-08-17 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the full range of possible strategies for laterally aligning self-assembled quantum dots on a substrate surface, beginning with pure self-ordering mechanisms and culminating with forced alignment by lithographic positioning. The text addresses both short- and long-range ordering phenomena and introduces future high integration of single quantum dot devices on a single chip. Contributions by well-known experts ensure that all relevant quantum-dot heterostructures are elucidated from diverse perspectives.
Book Synopsis Controlled Growth of InAs/GaAs Self-assembled Quantum Dots by : Peter Brian Joyce
Download or read book Controlled Growth of InAs/GaAs Self-assembled Quantum Dots written by Peter Brian Joyce and published by . This book was released on 2002 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Control of the Number of Dots in Inas Quantum Dot Molecules for Quantum Computing by : Naparat Siripitakchai
Download or read book Control of the Number of Dots in Inas Quantum Dot Molecules for Quantum Computing written by Naparat Siripitakchai and published by . This book was released on 2006 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: Self-assembled lateral InAs quantum dot molecules (QDMs) are grown by solid-source molecular beam epitaxy (MBE) technique using the thin-capping-and-regrowth MBE process. Thin-capping of GaAs on as-grown InAs quantum dots (QDs) at low temperatures leads to nanohole templates. The shape, size and depth of nanoholes are controlled by capping thickness. Subsequent regrowth with 0.6 ML of InAs on the templates result in nano-propeller QDs with different blades' dimensions. We found that the length of the propeller blades is controlled by either the capping temperature or the thickness of capping layer. When the amount of InAs regrowth layer increases from 0.6 to 1.2 and 1.5 ML, QDMs with different shapes are created. The center dots are formed by filling up nanoholes at the beginning phase until the strain relaxation at center becomes minimized. Later on, the rest of InAs regrowth material starts to form satellite dots along the blade of nano-propeller where remaining strain fields are still distributed at the perimeter of nano-propeller blades. The dot uniformity and their dot size of all QDM samples are examined by photoluminescence (PL) measurements at 77 K. Furthermore, the excitation power dependence of PL spectra of all samples is also conducted. The PL results from some case of different QDMs also exhibit the shift of the PL peaks toward higher energies. We believe that the coupling between center dot and satellite dots lead to the extending in their band structures.
Book Synopsis Self-assembled In(Al,Ga)As/Ga(Al)As Quantum Dots for Intersubband Detectors by : Jamie Dean Phillips
Download or read book Self-assembled In(Al,Ga)As/Ga(Al)As Quantum Dots for Intersubband Detectors written by Jamie Dean Phillips and published by . This book was released on 1998 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Impact of Ion Implantation on Quantum Dot Heterostructures and Devices by : Arjun Mandal
Download or read book Impact of Ion Implantation on Quantum Dot Heterostructures and Devices written by Arjun Mandal and published by Springer. This book was released on 2017-06-02 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from the system. While rapid thermal annealing, pulsed laser annealing and the hydrogen passivation technique have been popular as post-growth methods, ion implantation had not been explored largely as a post-growth method for improving the material properties of In(Ga)As/GaAs QD heterostructures. This work attempts to remedy this gap in the literature. The work also looks at introduction of a capping layer of quaternary alloy InAlGaAs over these In(Ga)As/GaAs QDs to achieve better QD characteristics. The contents of this volume will prove useful to researchers and professionals involved in the study of QDs and QD-based devices.
Book Synopsis Mme la comtesse Dash (Cisterne de Courtras, vicomtesse de Saint-Mars). by :
Download or read book Mme la comtesse Dash (Cisterne de Courtras, vicomtesse de Saint-Mars). written by and published by . This book was released on 1866 with total page 2 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Potential of Strain Induced Semiconductor Quantum Dots for Device Applications by : Serguei Albertovich Komarov
Download or read book Potential of Strain Induced Semiconductor Quantum Dots for Device Applications written by Serguei Albertovich Komarov and published by . This book was released on 2002 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Study of Quantum Confined Energy Levels in Self-organized In(Ga,Al)As/(Ga,Al)As Quantum Dots and Their Application to Mid-infrared Sources and Detections by : Sanjay Krishna
Download or read book Study of Quantum Confined Energy Levels in Self-organized In(Ga,Al)As/(Ga,Al)As Quantum Dots and Their Application to Mid-infrared Sources and Detections written by Sanjay Krishna and published by . This book was released on 2001 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Microstructural and Optical Properties of Self-assembled Quantum Dots for Optical Devices Grown by Molecular Beam Epitaxy by : Maria Noemi Perez-Paz
Download or read book Microstructural and Optical Properties of Self-assembled Quantum Dots for Optical Devices Grown by Molecular Beam Epitaxy written by Maria Noemi Perez-Paz and published by . This book was released on 2005 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Verzameling propagandamateriaal voor de parlementsverkiezingen in Indonesië, april 2009 by :
Download or read book Verzameling propagandamateriaal voor de parlementsverkiezingen in Indonesië, april 2009 written by and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
