High-frequency Simulation of Resonant Tunneling Diodes

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Publisher :
ISBN 13 :
Total Pages : 244 pages
Book Rating : 4.:/5 (313 download)

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Book Synopsis High-frequency Simulation of Resonant Tunneling Diodes by : Wan-Rone Liou

Download or read book High-frequency Simulation of Resonant Tunneling Diodes written by Wan-Rone Liou and published by . This book was released on 1993 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:

High Frequency Circuit Applications of Resonant Tunneling Diodes

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Publisher :
ISBN 13 :
Total Pages : 286 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis High Frequency Circuit Applications of Resonant Tunneling Diodes by : Scott K. Diamond

Download or read book High Frequency Circuit Applications of Resonant Tunneling Diodes written by Scott K. Diamond and published by . This book was released on 1990 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Transit Time Effects on the High Frequency Conductance of a Resonant Tunneling Diode

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Publisher :
ISBN 13 :
Total Pages : 180 pages
Book Rating : 4.3/5 (121 download)

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Book Synopsis The Transit Time Effects on the High Frequency Conductance of a Resonant Tunneling Diode by : Yun Zheng

Download or read book The Transit Time Effects on the High Frequency Conductance of a Resonant Tunneling Diode written by Yun Zheng and published by . This book was released on 2003 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:

High-Speed Heterostructure Devices

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Publisher : Cambridge University Press
ISBN 13 : 1139437461
Total Pages : 726 pages
Book Rating : 4.1/5 (394 download)

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Book Synopsis High-Speed Heterostructure Devices by : Patrick Roblin

Download or read book High-Speed Heterostructure Devices written by Patrick Roblin and published by Cambridge University Press. This book was released on 2002-03-07 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.

System Simulation and Scientific Computing

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Publisher : Springer
ISBN 13 : 3642343813
Total Pages : 480 pages
Book Rating : 4.6/5 (423 download)

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Book Synopsis System Simulation and Scientific Computing by : Tianyuan Xiao

Download or read book System Simulation and Scientific Computing written by Tianyuan Xiao and published by Springer. This book was released on 2012-10-08 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Three-Volume-Set CCIS 323, 324, 325 (AsiaSim 2012) together with the Two-Volume-Set CCIS 326, 327 (ICSC 2012) constitutes the refereed proceedings of the Asia Simulation Conference, AsiaSim 2012, and the International Conference on System Simulation, ICSC 2012, held in Shanghai, China, in October 2012. The 267 revised full papers presented were carefully reviewed and selected from 906 submissions. The papers are organized in topical sections on modeling theory and technology; modeling and simulation technology on synthesized environment and virtual reality environment; pervasive computing and simulation technology; embedded computing and simulation technology; verification, validation and accreditation technology; networked modeling and simulation technology; modeling and simulation technology of continuous system, discrete system, hybrid system, and intelligent system; high performance computing and simulation technology; cloud simulation technology; modeling and simulation technology of complex system and open, complex, huge system; simulation based acquisition and virtual prototyping engineering technology; simulator; simulation language and intelligent simulation system; parallel and distributed software; CAD, CAE, CAM, CIMS, VP, VM, and VR; visualization; computing and simulation applications in science and engineering; computing and simulation applications in management, society and economics; computing and simulation applications in life and biomedical engineering; computing and simulation applications in energy and environment; computing and simulation applications in education; computing and simulation applications in military field; computing and simulation applications in medical field.

Resonant-tunneling Diodes in High-performance Digital Circuit Applications

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Publisher :
ISBN 13 :
Total Pages : 354 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Resonant-tunneling Diodes in High-performance Digital Circuit Applications by : Alejandro Flavio González

Download or read book Resonant-tunneling Diodes in High-performance Digital Circuit Applications written by Alejandro Flavio González and published by . This book was released on 2002 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Analytical Modeling of Silicon Based Resonant Tunneling Diode for RF Oscillator Application

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Publisher :
ISBN 13 :
Total Pages : 163 pages
Book Rating : 4.:/5 (8 download)

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Book Synopsis Analytical Modeling of Silicon Based Resonant Tunneling Diode for RF Oscillator Application by : Emanuela Buccafurri

Download or read book Analytical Modeling of Silicon Based Resonant Tunneling Diode for RF Oscillator Application written by Emanuela Buccafurri and published by . This book was released on 2010 with total page 163 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the introduction in microelectronics of the MOS transistor, the trend has been to reduce the size of each device, in order to increase density and performance, and to reduce costs. Devices nowadays are in a range of dimensions governs by Quantum Physics. At the nano scale, it may be smarter to integrate new devices operating according to the law of quantum physics rather than to classical Physics. In this context, resonant tunneling diodes (RTDs) present interesting characteristics. Its maximum operating frequency is in the Terahertz range and offers a wide range of applications, in analog (analog-digital converter ADC, frequency divider or multiplier, oscillator as well as digital ("multi-value" logic) circuits. Its I-V characteristics present an unusual negative differential resistance (NDR). Such negative differential resistance is usually achieved by a circuit involving more devices, and significant power consumption. Like most of the other tunnel devices, the first RTD was realized on III-V materials. Nevertheless, difficulty to integrate III-V materials on silicon, pushed to find silicon compatible solution for RTD. In this work, an alternative option to integrate these innovative devices in a silicon process, exploiting the vertical transport (gate to gate) in a double gate MOSFET has been considered. The aim of this work is thus to estimate by the means of an original analytical models, the theoretical expected performances of silicon based RTDs (static and dynamic behavior) and to compare them with conventional heterostructures. The high operating frequency of RTD is one of the major advantages of this device, for this reason an accurate frequency analysis has been carried out in collaboration with the Universidad Autonoma de Barcelona in the Xavier Oriols team. Finally, this model has been introduced in a circuit simulator (CADENCE), and used to estimate the performances of RF oscillators based on silicon RTD.

Resonant Tunneling in Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 1461538467
Total Pages : 526 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Resonant Tunneling in Semiconductors by : L.L. Chang

Download or read book Resonant Tunneling in Semiconductors written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.

High Efficiency and High Frequency Resonant Tunneling Diode Sources

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Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (114 download)

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Book Synopsis High Efficiency and High Frequency Resonant Tunneling Diode Sources by : Andrei Cătălin Cornescu

Download or read book High Efficiency and High Frequency Resonant Tunneling Diode Sources written by Andrei Cătălin Cornescu and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Physics and Applications of Resonant Tunnelling Diodes

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Publisher : Cambridge University Press
ISBN 13 : 9780521432184
Total Pages : 256 pages
Book Rating : 4.4/5 (321 download)

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Book Synopsis The Physics and Applications of Resonant Tunnelling Diodes by : Hiroshi Mizuta

Download or read book The Physics and Applications of Resonant Tunnelling Diodes written by Hiroshi Mizuta and published by Cambridge University Press. This book was released on 1995-09-14 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first to give a comprehensive description of the physics and applications of resonant tunneling diodes. The opening chapters of the book set out the basic principles of coherent tunneling theory. The authors describe in detail the effects of impurity scattering, femtosecond dynamics, non-equilibrium distribution, and intrinsic bistabilities. They review the applications of RTDs, such as in high-frequency signal generation and multi-valued data storage, and close the book with a chapter on the new field of resonant tunneling through laterally confined zero-dimensional structures. Covering all the key theoretical and experimental aspects of this active area of research, the book will be of great value to graduate students of quantum transport physics and device engineering, as well as to researchers in both these fields.

Resonant Tunneling Diode Photonics

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Publisher : Morgan & Claypool Publishers
ISBN 13 : 1643277448
Total Pages : 129 pages
Book Rating : 4.6/5 (432 download)

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Book Synopsis Resonant Tunneling Diode Photonics by : Charlie Ironside

Download or read book Resonant Tunneling Diode Photonics written by Charlie Ironside and published by Morgan & Claypool Publishers. This book was released on 2019-11-11 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together two broad themes that have generated a great deal of interest and excitement in the scientific and technical community in the last 100 years or so: quantum tunnelling and nonlinear dynamical systems. It applies these themes to nanostructured solid state heterostructures operating at room temperature to gain insight into novel photonic devices, systems and applications.

Simulation and Emulation of Digital Integrated Circuits Containing Resonant Tunneling Diodes

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Publisher :
ISBN 13 : 9780599633438
Total Pages : pages
Book Rating : 4.6/5 (334 download)

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Book Synopsis Simulation and Emulation of Digital Integrated Circuits Containing Resonant Tunneling Diodes by : Mayukh Bhattacharya

Download or read book Simulation and Emulation of Digital Integrated Circuits Containing Resonant Tunneling Diodes written by Mayukh Bhattacharya and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Principles and Applications of NanoMEMS Physics

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Publisher : Springer Science & Business Media
ISBN 13 : 0387258345
Total Pages : 264 pages
Book Rating : 4.3/5 (872 download)

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Book Synopsis Principles and Applications of NanoMEMS Physics by : Hector Santos

Download or read book Principles and Applications of NanoMEMS Physics written by Hector Santos and published by Springer Science & Business Media. This book was released on 2006-07-02 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents the first unified exposition of the physical principles at the heart of NanoMEMS-based devices and applications Provides newcomers with a much needed coherent scientific base for undertaking study and research in this field Takes great pains in rendering transparent advanced physical concepts and techniques, such as quantum information, second quantization, Luttinger liquids, bosonization, and superconductivity

III-V Tunneling Based Quantum Devices for High Frequency Applications

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Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (974 download)

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Book Synopsis III-V Tunneling Based Quantum Devices for High Frequency Applications by : Tyler A. Growden

Download or read book III-V Tunneling Based Quantum Devices for High Frequency Applications written by Tyler A. Growden and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A compact and coherent terahertz (THz) source which can operate at room temperature is highly sought after for applications ranging from ultra-high speed wireless and fiber communications, medical imaging, security imaging, spectroscopy, and sensing. While the technology to generate and receive power at these frequencies does exist, it is impractical and lacks the ability to efficiently operate at room temperature. There are some electronic devices which are capable of operating at the low frequency end of the THz spectrum, however, they suffer from very low output power. The lack of viable sources, detectors, and interconnects at these frequencies has led to the well-known “THz gap” problem. This dissertation explores the use of tunneling-based devices to address these challenges. Presently, resonant tunneling diodes (RTDs) have reported the highest room temperature oscillation frequency (>1 THz) of any electronic device. However, traditional InGaAs/AlAs and InAs/AlSb RTD-based sources all struggle from very low output power (μW levels). As a result of relatively modest conduction band barrier heights, the voltage and current span of the negative differential resistance (NDR) region of these devices is insufficient for significant power generation. To address this problem, large conduction band barrier GaN-based RTDs were developed here. Highly repeatable room temperature NDR for GaN-based RTDs is reported for the first time. Subsequent simulations based on non-equilibrium Green’s functions (NEGF) were done to optimize future growths. Details of the growth, device design, process development, simulation, and characterization techniques are discussed. A fundamental understanding of the electron-transport delays associated with the operation of high frequency RTD-based devices is essential to optimize performance. To this end, research on the effect that quantum-well (QW) lifetime has on the large-signal RTD switching time was carried out. A high-speed oscilloscope was used to obtain experimental evidence that the QW lifetime and RC 10-90% switching time act independently and that the QW lifetime acts as a quantum-limit on the RTD speed. Finally, while developing GaN/AlN RTDs, high intensity near-UV (360nm) light emission was observed under both positive and negative bias just past the NDR region. Consequently, the origin of light emission in an RTD was exhaustively explored and is reported here for the first time.

Advances in Terahertz Source Technologies

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Publisher : CRC Press
ISBN 13 : 1000995453
Total Pages : 773 pages
Book Rating : 4.0/5 (9 download)

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Book Synopsis Advances in Terahertz Source Technologies by : Gun-Sik Park

Download or read book Advances in Terahertz Source Technologies written by Gun-Sik Park and published by CRC Press. This book was released on 2024-04-16 with total page 773 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the past several decades, tremendous progress has been made in terahertz (THz) science and technology. There is a continuing need to have terahertz waves ready for practical applications. Terahertz photonic and electronic devices are being readied to be employed in application systems such as communication links, satellite communications, radar, surveillance, hard/soft material heating, biomedical treatment, and biomedical diagnostics. This book focuses on the advances in terahertz source technologies both from photonics and electronics (solid-state and vacuum-state) points of view. Written in a noncomplicated language, the book will be useful for a broad spectrum of readers, including advanced undergraduate- and graduate-level students in electronics and photonics, researchers in various disciplines in physics, chemistry, biology, astronomy, and electrical engineering, system engineers in various industrial sectors, general readers, and those who are interested in the interaction between electromagnetic waves and matters and in the effects of electromagnetic waves on matters.

The Wigner Monte Carlo Method for Nanoelectronic Devices

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Publisher : John Wiley & Sons
ISBN 13 : 1118618440
Total Pages : 191 pages
Book Rating : 4.1/5 (186 download)

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Book Synopsis The Wigner Monte Carlo Method for Nanoelectronic Devices by : Damien Querlioz

Download or read book The Wigner Monte Carlo Method for Nanoelectronic Devices written by Damien Querlioz and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 191 pages. Available in PDF, EPUB and Kindle. Book excerpt: The emergence of nanoelectronics has led us to renew the concepts of transport theory used in semiconductor device physics and the engineering community. It has become crucial to question the traditional semi-classical view of charge carrier transport and to adequately take into account the wave-like nature of electrons by considering not only their coherent evolution but also the out-of-equilibrium states and the scattering effects. This book gives an overview of the quantum transport approaches for nanodevices and focuses on the Wigner formalism. It details the implementation of a particle-based Monte Carlo solution of the Wigner transport equation and how the technique is applied to typical devices exhibiting quantum phenomena, such as the resonant tunnelling diode, the ultra-short silicon MOSFET and the carbon nanotube transistor. In the final part, decoherence theory is used to explain the emergence of the semi-classical transport in nanodevices.

Next Generation Wireless Terahertz Communication Networks

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Publisher : CRC Press
ISBN 13 : 1000416348
Total Pages : 531 pages
Book Rating : 4.0/5 (4 download)

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Book Synopsis Next Generation Wireless Terahertz Communication Networks by : Saim Ghafoor

Download or read book Next Generation Wireless Terahertz Communication Networks written by Saim Ghafoor and published by CRC Press. This book was released on 2021-08-10 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapid growth of the data traffic demands new ways to achieve high-speed wireless links. The backbone networks, data centers, mission-critical applications, as well as end-users sitting in office or home, all require ultra-high throughput and ultra-low latency wireless links. Sophisticated technological advancement and huge bandwidth are required to reduce the latency. Terahertz band, in this regard, has a huge potential to provide these high-capacity links where a user can download the file in a few seconds. To realize the high-capacity wireless links for future applications, in this book, different aspects of the Terahertz band wireless communication network are presented. This book highlights the Terahertz channel characteristics and modeling, antenna design and beamforming, device characterization, applications, and protocols. It also provides state-of-the-art knowledge on different communication aspects of Terahertz communication and techniques to realize the true potential of the Terahertz band for wireless communication.