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Growth Of Gallium Nitride On Porous Templates By Metalorganic Chemical Vapor Deposition
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Book Synopsis Growth of Gallium Nitride on Porous Templates by Metalorganic Chemical Vapor Deposition by : Yi Fu
Download or read book Growth of Gallium Nitride on Porous Templates by Metalorganic Chemical Vapor Deposition written by Yi Fu and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this dissertation, GaN growth on porous templates by metalorganic chemical vapor deposition (MOCVD) was studied. The motivation of this research is pursuing an effective reduction of defects in GaN by its submicron-scale and nano-scale epitaxial lateral overgrowth (ELO) on these porous templates, which included porous TiN/GaN (P-TiN), imprint lithography patterned Ti/GaN (IL-Ti), carbon-face nano-porous SiC (C-PSC), and silicon-face nano-porous SiC (Si-PSC). The porous TiN/GaN was formed in situ in MOCVD reactor by annealing a Ti-covered GaN seed layer. This simplicity makes the GaN ELO on the P-TiN more cost-efficient than the conventional ELO which requires ex situ photolithography and/or etching. Both the GaN nano-ELO and the GaN micron-ELO could be realized on P-TiN by controlling the GaN nucleation scheme. The reduction efficacy of edge threading dislocation (TD) was ~15 times. The optical characterization indicated that the non-radiative point-defects in GaN grown were reduced significantly on the P-TiN. The imprint lithography patterned Ti/GaN had uniformly distributed submicron Ti pads on GaN seed layer. These Ti pads acted as GaN ELO masks. The TD reduction efficacy of the IL-Ti was only ~2 due to the low coverage of Ti (~25%) on the GaN seed layer and the low pressure (30 Torr) employed during GaN ELO. Even with a small reduction of TDs, the point-defects in GaN were effectively lowered by the IL-Ti. Hydrogen polishing, sacrificial oxidation, and chemical mechanical polishing were employed to remove surface damage on the PSC substrates. Nitrogen-polarity GaN grown on the C-PSC was highly dislocated because the rough surface of C-PSC induced strong misorientation between GaN nucleation islands. The efficacy of Si-PSC on defect reduction primarily depended on the GaN nucleation schemes. A high density of GaN nano-nucleation-islands was required to realize the GaN nano-ELO extensively. With such a nucleation scheme, the GaN grown on Si-PSC had a ~20 times reduction on the density of the mixed and screw TDs compared with control sample. This growth method is promising for effective defect reduction within a small GaN thickness. Reducing the GaN nucleation density further lowered the TD density but also diminished the efficacy of Si-PSC. These results were explained by a growth model based on the mosaic structure of GaN.
Book Synopsis Growth of Gallium Nitride and Indium Gallium Nitride Nano/Microstructures Via Metal Organic Chemical Vapor Deposition by : David Wood
Download or read book Growth of Gallium Nitride and Indium Gallium Nitride Nano/Microstructures Via Metal Organic Chemical Vapor Deposition written by David Wood and published by . This book was released on 2014 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: Indium gallium nitride nanostructures were grown at a temperature of 600oC and a total V/III ratio of 10,000. Below an indium fraction of 0.20 nanostructures were observed with diameters between 200 and 350 nanometers. The diameters were found to decrease with increasing indium fraction. Texturing in the (0001) c-plane direction was also enhanced as the indium fraction was increased. At indium fractions above 0.20 the formation of metal droplets within a porous indium gallium nitride film were observed. There are several untried deposition recipes that can yet be attempted to grow the nanostructures over the entire compositional range of the indium gallium nitride alloy.
Book Synopsis Porous Silicon Carbide and Gallium Nitride by : Randall M. Feenstra
Download or read book Porous Silicon Carbide and Gallium Nitride written by Randall M. Feenstra and published by John Wiley & Sons. This book was released on 2008-04-15 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more
Book Synopsis Growth and Characterization of Gallium Nitride and Boron Gallium Nitride by Metalorganic Chemical Vapor Deposition by : Chih-Hsun Wei
Download or read book Growth and Characterization of Gallium Nitride and Boron Gallium Nitride by Metalorganic Chemical Vapor Deposition written by Chih-Hsun Wei and published by . This book was released on 1999 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Cole W. Litton Publisher :SPIE-International Society for Optical Engineering ISBN 13 :9780819461636 Total Pages :322 pages Book Rating :4.4/5 (616 download)
Book Synopsis Gallium Nitride Materials and Devices by : Cole W. Litton
Download or read book Gallium Nitride Materials and Devices written by Cole W. Litton and published by SPIE-International Society for Optical Engineering. This book was released on 2006 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.
Book Synopsis The growth and characterization of gallium nitride epitaxial layers grown by low pressure metalorganic chemical vapor deposition by : Adrian Lawrence Holmes
Download or read book The growth and characterization of gallium nitride epitaxial layers grown by low pressure metalorganic chemical vapor deposition written by Adrian Lawrence Holmes and published by . This book was released on 1994 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metalorganic Chemical Vapor Deposition of Gallium Nitride on Sacrificial Substrates by : William Edward Fenwick
Download or read book Metalorganic Chemical Vapor Deposition of Gallium Nitride on Sacrificial Substrates written by William Edward Fenwick and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ZnO, because of its similar lattice constant and thermal expansion coefficient, is a promising substrate for growth of low defect-density GaN. The major hurdles for GaN growth on ZnO are the instability of ZnO in a hydrogen atmosphere and out-diffusion of zinc and oxygen from the substrate. A process was developed for the MOCVD growth of wurtzite GaN and InxGa1-xN on ZnO, and the structural and optical properties of these films were studied. High zinc and oxygen concentrations remained an issue, however, and the diffusion of zinc and oxygen into the subsequent GaN layer was studied more closely.
Book Synopsis Homo- and Hetero-epitaxial Growth of Gallium Nitride by Metalorganic Chemical Vapour Deposition by : Andreas Rudolf Antonius Zauner
Download or read book Homo- and Hetero-epitaxial Growth of Gallium Nitride by Metalorganic Chemical Vapour Deposition written by Andreas Rudolf Antonius Zauner and published by . This book was released on 2001 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Technology of Gallium Nitride Crystal Growth by : Dirk Ehrentraut
Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Book Synopsis Studies of Gallium Nitride Grown on Silicon Substrate by Metalorganic Chemical Vapor Deposition by : Jingli Chen
Download or read book Studies of Gallium Nitride Grown on Silicon Substrate by Metalorganic Chemical Vapor Deposition written by Jingli Chen and published by . This book was released on 2000 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of High Quality Gallium Nitride Layers by Metal Organic Chemical Vapour Deposition and Detection of Epitaxial Defects in Silicon by Light Scattering by : D. V. Nirmal Ramaswamy
Download or read book Growth of High Quality Gallium Nitride Layers by Metal Organic Chemical Vapour Deposition and Detection of Epitaxial Defects in Silicon by Light Scattering written by D. V. Nirmal Ramaswamy and published by . This book was released on 2002 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of Gallium Nitride on (0001) Sapphire by Plasma Enhanced Atomic Layer Epitaxy and by Low Pressure Metalorganic Chemical Vapor Deposition by : Chiao-Yi Hwang
Download or read book Growth and Characterization of Gallium Nitride on (0001) Sapphire by Plasma Enhanced Atomic Layer Epitaxy and by Low Pressure Metalorganic Chemical Vapor Deposition written by Chiao-Yi Hwang and published by . This book was released on 1996 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Pattern Dependent Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition by : Xingang Zhang
Download or read book Pattern Dependent Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition written by Xingang Zhang and published by . This book was released on 2001 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of Gallium Nitride and Indium Nitride Films and Nanostructured Materials by Hydride-metalorganic Vapor Phase Epitaxy by : Hyun Jong Park
Download or read book Growth of Gallium Nitride and Indium Nitride Films and Nanostructured Materials by Hydride-metalorganic Vapor Phase Epitaxy written by Hyun Jong Park and published by . This book was released on 2006 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crack-free, 3 mum GaN films were grown on GaN/AlGaN/Si template at 850°C although cracks developed when the thickness exceeded 7 mum. It was possible, however, to grow crack-free polycrystalline 40 mum thick GaN on Si using InN NRs as a buffer material.
Book Synopsis Iii-Nitride Devices and Nanoengineering by : Zhe Chuan Feng
Download or read book Iii-Nitride Devices and Nanoengineering written by Zhe Chuan Feng and published by Imperial College Press. This book was released on 2008 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Book Synopsis Metalorganic Chemical Vapor Depositon [sic] of Indium Nitride and Indium Gallium Nitride Thin Films and Nanostructures for Electronic and Photovoltaic Applications by : Joshua L. Mangum
Download or read book Metalorganic Chemical Vapor Depositon [sic] of Indium Nitride and Indium Gallium Nitride Thin Films and Nanostructures for Electronic and Photovoltaic Applications written by Joshua L. Mangum and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A VLS growth mechanism is proposed, however, a VS growth mechanism can be achieved at high N/In ratios. SEM and TEM analysis revealed a core-shell nanowire structure with a single crystal InN core and a poly-crystalline In2O3 shell. Nanowire growth occurs along the [0002] direction with diameters and lengths ranging from 100 to 300 nm and 10 to 40 microns, respectively for a 1 hr growth. H-MOCVD growth of InN nano- and microrods occurred on different substrates and the nanorod structure was studied by TEM. The polarity of the substrate directly affected the nanorod tip shape and prismatic stacking faults are suggested as the cause for the flower-like growth habit. Variation of growth parameters, such as temperature, N/In ratio, and Cl/In ratio proved to be ineffective at changing the aspect ratio of the nanorods. Increased growth duration produces microrod size dimensions regardless of the chosen growth conditions.
Book Synopsis Growth Process for Gallium Nitride Porous Nanorods by :
Download or read book Growth Process for Gallium Nitride Porous Nanorods written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiN.sub.x on the GaN film, etching a growth opening through the SiN.sub.x and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiN.sub.x layer can be removed after the growing step. A SiO.sub.x template can be formed on the GaN film and the GaN can be grown to cover the SiO.sub.x template before depositing SiN.sub.x on the GaN film. The SiO.sub.x template can be removed after growing the nanorods.
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