Growth of Gallium Arsenide Using Ion Cluster Beam Technology. Volume 1. Phase 2

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ISBN 13 :
Total Pages : 89 pages
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Book Synopsis Growth of Gallium Arsenide Using Ion Cluster Beam Technology. Volume 1. Phase 2 by : Robert L. Adams

Download or read book Growth of Gallium Arsenide Using Ion Cluster Beam Technology. Volume 1. Phase 2 written by Robert L. Adams and published by . This book was released on 1988 with total page 89 pages. Available in PDF, EPUB and Kindle. Book excerpt: This program was designed to study the feasibility of growing epitaxial GaAs thin films for subsequent application in electronic devices. Due to mechanical difficulties and design problems the technique of deposition via ionized clusters was not realized. Data collected is somewhat inconclusive. To answer the feasibility question further, work including modification of the hardware needs to be performed. To this point the techniques have been shown to be capable of growing single crystal GaAs, but the required electrical characteristics of the film are not present. Ion cluster beam, Ion assisted growth, Gallium arsenides. (MJM).

Growth of Gallium Arsenide Using Ion Cluster Beam Technology. Volume 2. Phase 2

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ISBN 13 :
Total Pages : 145 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis Growth of Gallium Arsenide Using Ion Cluster Beam Technology. Volume 2. Phase 2 by : Robert L. Adams

Download or read book Growth of Gallium Arsenide Using Ion Cluster Beam Technology. Volume 2. Phase 2 written by Robert L. Adams and published by . This book was released on 1988 with total page 145 pages. Available in PDF, EPUB and Kindle. Book excerpt: This program was designed to study the feasibility of growing epitaxial GaAs thin films for subsequent application in electronic devices. Due to mechanical difficulties and design problems the technique of deposition via ionized clusters was not realized. Data collected is somewhat inconclusive. To answer the feasibility question further, work including modification of the hardware needs to be performed. To this point the techniques have been shown to be capable of growing single crystal GaAs, but the required electrical characteristics of the film are not present. Keywords: Gallium Arsenides; Ion cluster beam; Ion assisted growth. (mjm).

Growth of Gallium Arsenide Using Ion Cluster Beam Technology

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ISBN 13 :
Total Pages : 51 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis Growth of Gallium Arsenide Using Ion Cluster Beam Technology by : Robert L. Adams

Download or read book Growth of Gallium Arsenide Using Ion Cluster Beam Technology written by Robert L. Adams and published by . This book was released on 1986 with total page 51 pages. Available in PDF, EPUB and Kindle. Book excerpt: The growth of single crystal gallium arsenide (GaAs) epitaxial films on high resistivity GaAs substrates has been demonstrated. Films were grown at substrate temperatures from 600C down to 400C with thicknesses from 3000A to 5 micron. Growth rates were typically 150A/minute at all growth temperatures with thickness uniformity of + or - 5% over the sample (typical sample size 0.7in. X 0.7in.). The thickness was measured by a standard cleave and stain method. Single crystal behavior was shown using x-ray diffraction and SEM channeling patterns. Auger analysis was done on the films and showed characteristics comparable to those of the substrate. Hall data taken on the samples found the samples to be n-type, but with very low mobility. The low mobility is the result of defects grown into the structure because of high energy ions impinging on the surface. The energy of the ions was in the range of 100 to 1000 ev because of the small cluster size. The cluster had sizes of 10-50 atoms instead of the desired 500-2000 atoms/cluster. This smaller cluster is likely due to non-uniform heating of the crucibles by the e-beam filament. In addition, the diameter/length of the opening in the nozzle was 1:1. Recent work suggests a 1:10 ratio will allow more interactions and thus enhance the possibility of forming larger clusters. With larger clusters, lower energy per ion will be possible and the native defects will be reduced.

Scientific and Technical Aerospace Reports

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ISBN 13 :
Total Pages : 380 pages
Book Rating : 4.X/5 (4 download)

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Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.

Demand Bibliography

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ISBN 13 :
Total Pages : 44 pages
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Download or read book Demand Bibliography written by and published by . This book was released on 1989 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Gallium Arsenide Technology

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Publisher : Sams Technical Publishing
ISBN 13 :
Total Pages : 504 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Gallium Arsenide Technology by : David K. Ferry

Download or read book Gallium Arsenide Technology written by David K. Ferry and published by Sams Technical Publishing. This book was released on 1985 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Molecular Beam Epitaxy

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Publisher : CRC Press
ISBN 13 : 1351093525
Total Pages : 411 pages
Book Rating : 4.3/5 (51 download)

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Book Synopsis Silicon Molecular Beam Epitaxy by : E. Kasper

Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Technical Reports Awareness Circular : TRAC.

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ISBN 13 :
Total Pages : 516 pages
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Download or read book Technical Reports Awareness Circular : TRAC. written by and published by . This book was released on 1989 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Growth of Gallium Nitride by Gas-cluster-ion-beam Deposition

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ISBN 13 :
Total Pages : 244 pages
Book Rating : 4.:/5 (517 download)

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Book Synopsis Growth of Gallium Nitride by Gas-cluster-ion-beam Deposition by : Tai-Chou Papo Chen

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Gallium and Gallium Arsenide

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ISBN 13 :
Total Pages : 36 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Gallium and Gallium Arsenide by : Deborah A. Kramer

Download or read book Gallium and Gallium Arsenide written by Deborah A. Kramer and published by . This book was released on 1988 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Growth, Characterization, and Applications of Gallium Arsenide and Germanium Layers Grown by Molecular Beam Epitaxy

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ISBN 13 :
Total Pages : 384 pages
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Book Synopsis Growth, Characterization, and Applications of Gallium Arsenide and Germanium Layers Grown by Molecular Beam Epitaxy by : Richard Alan Stall

Download or read book Growth, Characterization, and Applications of Gallium Arsenide and Germanium Layers Grown by Molecular Beam Epitaxy written by Richard Alan Stall and published by . This book was released on 1980 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Energy: a Continuing Bibliography with Indexes

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ISBN 13 :
Total Pages : 1100 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Energy: a Continuing Bibliography with Indexes written by and published by . This book was released on 1980 with total page 1100 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Ga Positive Focused Ion Beam Processing of Gallium Arsenide and Silicon

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ISBN 13 :
Total Pages : 388 pages
Book Rating : 4.:/5 (396 download)

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Book Synopsis Ga Positive Focused Ion Beam Processing of Gallium Arsenide and Silicon by : Wei Chen

Download or read book Ga Positive Focused Ion Beam Processing of Gallium Arsenide and Silicon written by Wei Chen and published by . This book was released on 1994 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Abstracts of Science and Technology in Japan

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ISBN 13 :
Total Pages : 1184 pages
Book Rating : 4.F/5 ( download)

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Download or read book Abstracts of Science and Technology in Japan written by and published by . This book was released on 1991 with total page 1184 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Masters Theses in the Pure and Applied Sciences

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Publisher : Springer Science & Business Media
ISBN 13 : 1461573912
Total Pages : 386 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Masters Theses in the Pure and Applied Sciences by : Wade H. Shafer

Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thougtit that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 31 (thesis year 1986) a total of 11 ,480 theses titles trom 24 Canadian and 182 United States universities. We are sure that this broader base tor these titles reported will greatly enhance the value ot this important annual reterence work. While Volume 31 reports theses submitted in 1986, on occasion, certain univer sities do re port theses submitted in previousyears but not reported at the time.

Low Temperature Growth of Gallium Arsenide by Molecular Beam Epitaxy

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (643 download)

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Book Synopsis Low Temperature Growth of Gallium Arsenide by Molecular Beam Epitaxy by : S. P. OH̀agan

Download or read book Low Temperature Growth of Gallium Arsenide by Molecular Beam Epitaxy written by S. P. OH̀agan and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Energy Research Abstracts

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ISBN 13 :
Total Pages : 582 pages
Book Rating : 4.0/5 ( download)

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Download or read book Energy Research Abstracts written by and published by . This book was released on 1991-10 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: