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Growth By Molecular Beam Epitaxy And Characterization Of Alxga1 Xn Alloy Films And Heterostructures
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Book Synopsis Growth by Molecular Beam Epitaxy and Characterization of AlxGA1-xN Alloy Films and Heterostructures by : Dimitris Korakakis
Download or read book Growth by Molecular Beam Epitaxy and Characterization of AlxGA1-xN Alloy Films and Heterostructures written by Dimitris Korakakis and published by . This book was released on 1998 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy Growth and Characterization of ZnO-based Layers and Heterostructures by : Abdelhamid Abdelrehim Mahmoud Elshaer
Download or read book Molecular Beam Epitaxy Growth and Characterization of ZnO-based Layers and Heterostructures written by Abdelhamid Abdelrehim Mahmoud Elshaer and published by Cuvillier Verlag. This book was released on 2008 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy by : John Orton
Download or read book Molecular Beam Epitaxy written by John Orton and published by OUP Oxford. This book was released on 2015-06-25 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Book Synopsis Molecular Beam Epitaxial Growth and Characterization of InGaN Based Alloys, Heterostructures and Multi-quantum Wells by : Rajminder Singh
Download or read book Molecular Beam Epitaxial Growth and Characterization of InGaN Based Alloys, Heterostructures and Multi-quantum Wells written by Rajminder Singh and published by . This book was released on 1997 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxial Growth and Characterization of the Manganese-based Heusler Alloy Films for Application in Spintronics by : Xuying Dong
Download or read book Molecular Beam Epitaxial Growth and Characterization of the Manganese-based Heusler Alloy Films for Application in Spintronics written by Xuying Dong and published by . This book was released on 2005 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Book Synopsis Molecular Beam Epitaxy and Heterostructures by : L.L. Chang
Download or read book Molecular Beam Epitaxy and Heterostructures written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.
Book Synopsis Molecular Beam Epitaxy by : Brian R. Pamplin
Download or read book Molecular Beam Epitaxy written by Brian R. Pamplin and published by Pergamon. This book was released on 1980 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy Deposition and Characterization of Thin-film Thermoelectric Devices by : Rajeev Singh
Download or read book Molecular Beam Epitaxy Deposition and Characterization of Thin-film Thermoelectric Devices written by Rajeev Singh and published by . This book was released on 2005 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy Growth and Characterization of Ultra-wide Bandgap Materials and Devices by : Ryan Lowry Page
Download or read book Molecular Beam Epitaxy Growth and Characterization of Ultra-wide Bandgap Materials and Devices written by Ryan Lowry Page and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultrawide bandgap (UWBG) semiconductors, especially those in the III-nitride family of materials with their exceptional electronic, optical, and thermal properties, will play a highly important role in the next generation of ultraviolet photonic and high power electronic devices. Currently, the performance and utilization of many UWBG materials in device applications is hampered by fundamental materials challenges with growth and doping. This thesis covers the growth and materials properties of two III-nitride UWBG materials, primarily grown by molecular beam epitaxy (MBE). First, hexagonal boron nitride, a two dimensional, layered material with unique optical properties and potential applications in van der Waals-based devices and heterostructures will be discussed. Second, recent work on aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) alloys will be presented.This work begins with an investigation into the high temperature MBE growth of hBN on several substrates. The layers show improved quality over previous reports and are thoroughly characterized. Next, the optical properties of these hBN films, as well as those of bulk doped hBN crystals, are investigated by cryogenic deep UV photoluminescence. Several new emission characteristics are identified and studied in these hBN materials, including carbon-induced luminescence, the direct bandgap transition of monolayer hBN, and single photon emission from hBN defects. Transitioning to the AlGaN platform, the growth of AlN and AlGaN by MBE on high quality single crystalline bulk AlN substrates is outlined and expanded upon, including an analysis of AlGaN doping with Si and Mg. The MBE growth, doping, and electron transport of heavily Si-doped, high Al mole fraction Al- GaN on bulk AlN is investigated, revealing upper practical limits to both Al mole fraction and Si doping density for high conductivity n-type films. In addition to this work on material growth and characterization, several AlGaN-based devices, an optically pumped UV laser and a Schottky barrier diode, will be introduced and discussed. These devices directly benefit from the preceding advances in AlGaN growth and doping. Finally, initial exploratory investigations and results on cubic phase BN as well as boron aluminum nitride alloys will be presented.
Book Synopsis MOLECULAR BEAM EPITAXY AND CHARACTERIZATION OF STRAINED HETEROSTRUCTURES AND DEVICES (IMPACT IONIZATION). by : YAOCHUNG CHEN
Download or read book MOLECULAR BEAM EPITAXY AND CHARACTERIZATION OF STRAINED HETEROSTRUCTURES AND DEVICES (IMPACT IONIZATION). written by YAOCHUNG CHEN and published by . This book was released on 1992 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt: capability.
Book Synopsis Materials Fundamentals of Molecular Beam Epitaxy by : Jeffrey Y. Tsao
Download or read book Materials Fundamentals of Molecular Beam Epitaxy written by Jeffrey Y. Tsao and published by Academic Press. This book was released on 2012-12-02 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE. * Provides comprehensive treatment of the basic materials and surface science principles that apply to molecular beam epitaxy * Thorough enough to benefit molecular beam epitaxy researchers * Broad enough to benefit materials, surface, and device researchers * Referenes articles at the forefront of modern research as well as those of historical interest
Book Synopsis Molecular Beam Epitaxial Growth, Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices by :
Download or read book Molecular Beam Epitaxial Growth, Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices written by and published by . This book was released on 1989 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research program on the growth by Molecular Beam Epitaxy of Hg- based alloys and heterostructures carried out in the Microphysics Laboratory at the University of Illinois at Chicago and supported by this contract has been extremely successful. Tremendous progress has been achieved towards the improvement of HgCdTe and related heterostructures in terms of structural, electrical and optical properties. A very important step has been passed through in the control of the twinning process during the growth in the (111)B orientation. Furthermore, it has been clearly established for the first time that twins or related dislocations are acting as acceptors in HgCdTe and are detrimental for diode performance, what was suspected but never proved until our conclusive experiments.
Book Synopsis Molecular Beam Epitaxial Growth and Characterization of Single Crystal Ferromagnetic Shape Memory Nickel-manganese-gallium Films by : Jianwei Dong
Download or read book Molecular Beam Epitaxial Growth and Characterization of Single Crystal Ferromagnetic Shape Memory Nickel-manganese-gallium Films written by Jianwei Dong and published by . This book was released on 2004 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy and Characterization of AIN/GaN Heterostructures by : Rashid Farivar
Download or read book Molecular Beam Epitaxy and Characterization of AIN/GaN Heterostructures written by Rashid Farivar and published by . This book was released on 2011 with total page 51 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy Growth and Characterization of Wide Bandgap Zn(x)Mg(1-x)Se Semiconductor Materials and Heterostructures for Intersubband Devices by : Mohammed A. Sohel
Download or read book Molecular Beam Epitaxy Growth and Characterization of Wide Bandgap Zn(x)Mg(1-x)Se Semiconductor Materials and Heterostructures for Intersubband Devices written by Mohammed A. Sohel and published by . This book was released on 2005 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1998 with total page 862 pages. Available in PDF, EPUB and Kindle. Book excerpt:
