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Growth And Characterization Of Silicon Based Dielectrics Using Plasma Enhanced Chemical Vapor Deposition
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Book Synopsis Growth and Characterization of Silicon-based Dielectrics Using Plasma Enhanced Chemical Vapor Deposition by : Daniel J. Carbaugh
Download or read book Growth and Characterization of Silicon-based Dielectrics Using Plasma Enhanced Chemical Vapor Deposition written by Daniel J. Carbaugh and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Plasma-enhanced Chemical Vapor Deposition of Silicon Dioxide by : Arjen Boogaard
Download or read book Plasma-enhanced Chemical Vapor Deposition of Silicon Dioxide written by Arjen Boogaard and published by . This book was released on 2011 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Surface Reactions During Plasma Enhanced Chemical Vapor Deposition of Silicon and Silicon Based Dielectrics by :
Download or read book Surface Reactions During Plasma Enhanced Chemical Vapor Deposition of Silicon and Silicon Based Dielectrics written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Theoretical ab-initio calculations (including both the Configuration Interaction and Density Functional approaches) are used to describe some of the critical surface reactions during plasma enhanced chemical vapor deposition of amorphous and micro-crystalline silicon films. The energetics as well as the reaction mechanism are calculated for the abstraction of surface hydrogen by incident silyl and hydrogen radicals. Another important reaction involving the insertion of these radicals (silyl and hydrogen) into strained Si-Si bonds on the surface is also evaluated. Experiments involve surface topology evolution studies of plasma deposited a-Si:H films using atomic force microscopy (AFM) as well as structural and electrical characterization of silicon dioxide films using several techniques including infrared spectroscopy, ellipsometry, and current-voltage measurements. A predictive kinetic model to describe the growth of silicon films from a predominantly silyl radical flux is developed to explain experimental observations regarding the properties of plasma deposited amorphous silicon films. The model explains diffusion length enhancements under certain processing conditions as well as lays a foundation for understanding the Si-Si network formation during the deposition of a-Si films.
Book Synopsis Remote Plasma Enhanced Chemical Vapor Deposition of Silicon Based Dielectrics by : Aditi Banerjee
Download or read book Remote Plasma Enhanced Chemical Vapor Deposition of Silicon Based Dielectrics written by Aditi Banerjee and published by . This book was released on 1996 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Plasma Deposition of Amorphous Silicon-Based Materials by : Pio Capezzuto
Download or read book Plasma Deposition of Amorphous Silicon-Based Materials written by Pio Capezzuto and published by Elsevier. This book was released on 1995-10-10 with total page 339 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Book Synopsis Characterization of Silicon Epitaxy Deposited by Plasma-enhanced Chemical Vapor Deposition at Low Temperatures and Very Low Pressures by : Linda Mason Garverick
Download or read book Characterization of Silicon Epitaxy Deposited by Plasma-enhanced Chemical Vapor Deposition at Low Temperatures and Very Low Pressures written by Linda Mason Garverick and published by . This book was released on 1987 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Deposition of Silicon Based Dielectrics by Remote Plasma Enhanced Chemical Vapor Deposition by : David Vincent Tsu
Download or read book Deposition of Silicon Based Dielectrics by Remote Plasma Enhanced Chemical Vapor Deposition written by David Vincent Tsu and published by . This book was released on 1989 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Development of Plasma Enhanced Chemical Vapor Deposition (PECVD) Gate Dielectrics for Thin-film Transistor Applications by : Germain L. Fenger
Download or read book Development of Plasma Enhanced Chemical Vapor Deposition (PECVD) Gate Dielectrics for Thin-film Transistor Applications written by Germain L. Fenger and published by . This book was released on 2010 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This study investigated a variety of electrically insulating materials for potential use as a gate dielectric in thin-film transistor applications. The materials that were investigated include silicon dioxide and oxynitride films deposited using PECVD and LPCVD techniques. Silicon source materials included tetraethylorthosilicate (TEOS) and silane (SiH4). Oxygen sources included diatomic oxygen (O2) and nitrous oxide (N2O). The optical, electrical, and material properties of the dielectrics were analyzed using Variable Angle Spectroscopic Ellipsometry (VASE), Fourier Transform Infrared Spectroscopy (FTIR), Capacitance-Voltage (C-V) analysis and current-voltage (I-V) analysis. Transistors were also fabricated at low temperatures with different gate dielectrics to investigate the impact on device performance. While a deposited gate dielectric is intrinsically inferior to a thermally grown SiO2 layer, an objective of this study was to create a high quality gate dielectric with low levels of bulk and interface charge (Qit & Qot~1x1010 cm2); this was achieved."--Abstract.
Book Synopsis Characterization of the electrical properties of epitaxial silicon films grown by remote plasma-enhanced chemical vapor deposition by : Rajan Sharma
Download or read book Characterization of the electrical properties of epitaxial silicon films grown by remote plasma-enhanced chemical vapor deposition written by Rajan Sharma and published by . This book was released on 1996 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of Dielectric Films on InP Deposited by Electron Cyclotron Resonance Chemical Vapor Deposition by : Mark W. Rowe
Download or read book Growth and Characterization of Dielectric Films on InP Deposited by Electron Cyclotron Resonance Chemical Vapor Deposition written by Mark W. Rowe and published by . This book was released on 1992 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Plasma Deposition of Amorphous Silicon-based Materials by : Giovanni Bruno
Download or read book Plasma Deposition of Amorphous Silicon-based Materials written by Giovanni Bruno and published by . This book was released on 1995 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Book Synopsis Characterization of Low-temperature Silicon Epitaxy Deposited by Plasma Enhanced Chemical Vapor Deposition by : T. J. Donahue
Download or read book Characterization of Low-temperature Silicon Epitaxy Deposited by Plasma Enhanced Chemical Vapor Deposition written by T. J. Donahue and published by . This book was released on 1985* with total page 29 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Surface Reactions During Plasma Enhanced Chemical Vapor Deposition of Silicon and Silicon Based Dielectrics by : Atul Gupta
Download or read book Surface Reactions During Plasma Enhanced Chemical Vapor Deposition of Silicon and Silicon Based Dielectrics written by Atul Gupta and published by . This book was released on 2001 with total page 163 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: Plasma deposition, Surface chemistry, Ab-initio calculations, Reaction mechanisms, Kinetics, Amorphous silicon, Silicon dioxide.
Book Synopsis Synthesis and Characterization of Silicon Dioxide Thin Films by Plasma Enhances Chemical Vapor Deposition from Diethylsilane and Nitrous Oxide by : Lan Chen
Download or read book Synthesis and Characterization of Silicon Dioxide Thin Films by Plasma Enhances Chemical Vapor Deposition from Diethylsilane and Nitrous Oxide written by Lan Chen and published by . This book was released on 1995 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Microstructural characterization of epitaxial silicon films grown by remote plasma-enhanced chemical vapor deposition by : Ting-Chen Hsu
Download or read book Microstructural characterization of epitaxial silicon films grown by remote plasma-enhanced chemical vapor deposition written by Ting-Chen Hsu and published by . This book was released on 1989 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Fabrication, and Characterization of an Ultra-low Cost Inductively-coupled Plasma Chemical Vapor Deposition Tool for Micro- and Nanofabrication by : Parker Andrew Gould
Download or read book Design, Fabrication, and Characterization of an Ultra-low Cost Inductively-coupled Plasma Chemical Vapor Deposition Tool for Micro- and Nanofabrication written by Parker Andrew Gould and published by . This book was released on 2019 with total page 235 pages. Available in PDF, EPUB and Kindle. Book excerpt: The high cost of semiconductor fabrication equipment has traditionally represented a large barrier to entry for groups seeking to develop or commercialize novel micro- and nanoscale devices. Much of the cost barrier stems from the large size of the substrates processed in this equipment, and the associated complexity of maintaining consistent operation across the full substrate area. By scaling the substrate size down from the 150-300 mm diameter sizes commonly seen in today's production environments, the capital cost and physical footprint of tools for micro- and nanoscale fabrication can be dramatically decreased, while still retaining a similarly high level of performance. In this work, an ultra-low cost inductively-coupled plasma chemical vapor deposition (ICPCVD) system for processing substrates up to 50.8 mm (2") in diameter is presented. The ICPCVD system is built within a modular vacuum tool architecture that allows sections of the full tool to be easily and inexpensively replaced to adapt to new processing conditions or provide additional functionality. The system uses a non-pyrophoric mixture of silane (1.5% in helium) and low substrate temperatures ( : 150*C) to deposit uniform silicon-based films with a high quality comparable to films deposited in research-grade commercial tools. Using response surface methods, the performance of the ICP-CVD system has been characterized for both silicon dioxide and silicon nitride films, and repeatable control of the deposited film properties, including deposition rate, index of refraction, film stress, and density, has been demonstrated.
Book Synopsis Plasma-Enhanced Atomic Layer Deposition of Boron Carbide for Interconnect Applications by : Lauren Mikal Dorsett
Download or read book Plasma-Enhanced Atomic Layer Deposition of Boron Carbide for Interconnect Applications written by Lauren Mikal Dorsett and published by . This book was released on 2018 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the semiconductor industry endeavors to scale integrated circuit dimensions-- decreasing layer thicknesses while increasing the aspect ratio of fillable features--the need for novel interconnect materials with highly specialized properties continues to rise. Meeting the requirements for the numerous types of materials needed, including low-k dielectrics, etch stops, metal diffusion barriers, hardmasks, spacer layers, and other pattern-assist layers, with traditional silicon-based materials is becoming increasingly challenging. As an alternative to silicon, amorphous hydrogenated boron carbide (a BC:H), grown through plasma-enhanced chemical vapor deposition (PECVD), has been demonstrated to possess excellent dielectric properties, combined with very high Young's modulus, electrical properties rivaling those of SiOC:H variants, very good chemical stability, and unique and useful etch chemistry. However, a problem with PECVD growth that will limit its long-term utility is its inability to scale while maintaining uniform, conformal coatings for very thin films. To combat the issues arising from PECVD grown boron carbide, a plasma enhanced molecular-layer-deposition-based process for the growth of BC films on metal (copper) substrates using solid carborane precursors was proposed. This thesis describes the design and construction of a reactor chamber capable of this hypothesized film growth as well as the characterization of those preliminary depositions. Monolayer carborane growths on copper substrates were demonstrated with characterization including in situ spectroscopic ellipsometry, as well as ex situ contact angle analysis and X-ray photoelectron spectroscopy. The surface of the monolayer was then plasma treated and preliminary multi-layer growths were tested.
