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Author : Andrea Kramer
Publisher :
ISBN 13 :
Total Pages : 117 pages
Book Rating : 4.:/5 (51 download)
Download or read book Growth and Characterization of Silicon and Germanium Nanowhiskers written by Andrea Kramer and published by . This book was released on 2009 with total page 117 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gudrun Kissinger
Publisher : CRC Press
ISBN 13 : 1466586648
Total Pages : 436 pages
Book Rating : 4.4/5 (665 download)
Download or read book Silicon, Germanium, and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
Author : Prashanth Madras
Publisher :
ISBN 13 :
Total Pages : 346 pages
Book Rating : 4.:/5 (854 download)
Download or read book Growth and Characterization of Silicon and Germanium Nanowires and Heterostructures written by Prashanth Madras and published by . This book was released on 2010 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Tilghman Lee Rittenhouse
Publisher :
ISBN 13 :
Total Pages : 180 pages
Book Rating : 4.:/5 (427 download)
Download or read book Single Crystal Growth and Characterization of Silicon Germanium Alloys written by Tilghman Lee Rittenhouse and published by . This book was released on 1999 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Y. Shiraki
Publisher : Elsevier
ISBN 13 : 0857091425
Total Pages : 649 pages
Book Rating : 4.8/5 (57 download)
Download or read book Silicon-Germanium (SiGe) Nanostructures written by Y. Shiraki and published by Elsevier. This book was released on 2011-02-26 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. Reviews the materials science of nanostructures and their properties and applications in different electronic devices Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition
Author : Tobias Südkamp
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (118 download)
Download or read book Characterization of atomic transport in nano-structured silicon and germanium to reveal properties of self- and foreign-atom defects written by Tobias Südkamp and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jimmy Yi-Jie Jia
Publisher :
ISBN 13 :
Total Pages : 50 pages
Book Rating : 4.:/5 (512 download)
Download or read book Characterization of Silicon and Germanium Nanoparticles written by Jimmy Yi-Jie Jia and published by . This book was released on 2002 with total page 50 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Cor Claeys
Publisher : Springer
ISBN 13 : 9783030067472
Total Pages : 474 pages
Book Rating : 4.0/5 (674 download)
Download or read book Metal Impurities in Silicon- And Germanium-Based Technologies written by Cor Claeys and published by Springer. This book was released on 2019-09-05 with total page 474 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices' performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.
Author : Mohamed Henini
Publisher : Newnes
ISBN 13 : 0123918596
Total Pages : 745 pages
Book Rating : 4.1/5 (239 download)
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Newnes. This book was released on 2012-12-31 with total page 745 pages. Available in PDF, EPUB and Kindle. Book excerpt: This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a ‘how to’ on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. Condenses fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community
Author : Erich Kasper
Publisher : Inst of Engineering & Technology
ISBN 13 : 9780852967836
Total Pages : 358 pages
Book Rating : 4.9/5 (678 download)
Download or read book Properties of Silicon Germanium and SiGe:Carbon written by Erich Kasper and published by Inst of Engineering & Technology. This book was released on 2000 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distills in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe; C, self-assembled nanostructures, quantum effects and device trends.
Author : Ruben Lieten
Publisher : ASP / VUBPRESS / UPA
ISBN 13 : 9054874856
Total Pages : 175 pages
Book Rating : 4.0/5 (548 download)
Download or read book Epitaxial Growth of Nitrides on Germanium written by Ruben Lieten and published by ASP / VUBPRESS / UPA. This book was released on 2009-09 with total page 175 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements.
Author : Alexander V. Latyshev
Publisher : Elsevier
ISBN 13 : 0128105135
Total Pages : 553 pages
Book Rating : 4.1/5 (281 download)
Download or read book Advances in Semiconductor Nanostructures written by Alexander V. Latyshev and published by Elsevier. This book was released on 2016-11-10 with total page 553 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures Covers recent developments in the field from all over the world Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries
Author : Erich Kasper
Publisher : Inst of Engineering & Technology
ISBN 13 : 9780863415579
Total Pages : 372 pages
Book Rating : 4.4/5 (155 download)
Download or read book Properties of Silicon Germanium and SiGe written by Erich Kasper and published by Inst of Engineering & Technology. This book was released on 1999-12 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC, with over 20 companies planning manufacture in the near future. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distils in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe: C, self-assembled nanostructures, quantum effects and device trends. The book contains 75% more text than Prof. Kasper's earlier book Properties of strained and relaxed SiGe (INSPEC, IEE, 1995), thoroughly updates its content and adds many new topics.
Author : Sujay Prabakar
Publisher :
ISBN 13 :
Total Pages : 246 pages
Book Rating : 4.:/5 (687 download)
Download or read book Synthesis and Characterization of Silicon and Germanium Nanocrystals and Titanium Disulphide Nanostructures written by Sujay Prabakar and published by . This book was released on 2010 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jianye Li
Publisher : Bentham Science Publishers
ISBN 13 : 1608050521
Total Pages : 186 pages
Book Rating : 4.6/5 (8 download)
Download or read book Advances in III-V Semiconductor Nanowires and Nanodevices written by Jianye Li and published by Bentham Science Publishers. This book was released on 2011-09-09 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"
Author : Wolfgang Jantsch
Publisher : American Institute of Physics
ISBN 13 : 9780735403970
Total Pages : 782 pages
Book Rating : 4.4/5 (39 download)
Download or read book Physics of Semiconductors written by Wolfgang Jantsch and published by American Institute of Physics. This book was released on 2007 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book features peer-reviewed papers that were presented at the 28th International Conference on the Physics of Semiconductors. This biannual conference presents and discusses all important developments and outstanding recent results in the field of semiconductor physics: one of the most important disciplines in solid state physics. Semiconductor physics provides the scientific basis for the microelectronic device industry.
Author : Hsing-Yu Tuan
Publisher :
ISBN 13 :
Total Pages : 179 pages
Book Rating : 4.:/5 (52 download)
Download or read book Synthesis and Characterization of Silicon and Germanium Nanowires, Silica Nanotubes, and Germanium Telluride/tellurium Nanostructures written by Hsing-Yu Tuan and published by . This book was released on 2007 with total page 179 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterostructured nanomaterials are interesting since they merge the properties of the individual materials and can be used in diverse applications. GeTe/Te heterostructures were synthesized by reacting diphenylgermane (DPG) and TOP-Te in the presence of organic surfactants. Aligned Te nanorods were grown on the surface facets of micrometer-size germanium telluride particles.
