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Growth And Characterization Of Heteroepitaxial Zinc Oxide Thin Films By Organometallic Vapor Phase Epitaxy
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Book Synopsis Growth and Characterization of Heteroepitaxial Zinc Oxide Thin Films by Organometallic Vapor Phase Epitaxy by : Pierre Souletie
Download or read book Growth and Characterization of Heteroepitaxial Zinc Oxide Thin Films by Organometallic Vapor Phase Epitaxy written by Pierre Souletie and published by . This book was released on 1987 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of ZnO Thin Films Produced by Metalorganic Vapor Phase Epitaxy by : Timothy Patrick Smith
Download or read book Growth and Characterization of ZnO Thin Films Produced by Metalorganic Vapor Phase Epitaxy written by Timothy Patrick Smith and published by . This book was released on 2001 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) by : Stuart Irvine
Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Book Synopsis Growth and Characterization of Epitaxial ZnO Thin Films on GaN(0001) Epilayers and ZnO{0001} Substrates Using Metalorganic Chemical Vapor Depositon by :
Download or read book Growth and Characterization of Epitaxial ZnO Thin Films on GaN(0001) Epilayers and ZnO{0001} Substrates Using Metalorganic Chemical Vapor Depositon written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ZnO thin films were produced on GaN(0001) epilayers and ZnO(0001) substrates utilizing an iterative process requiring a structured low temperature (480 & deg;C) layer followed by a high temperature (800 & deg;C) densification step to create approximately 200 nm of contiguous film. This process is subsequently repeated to achieve thicker films with each iteration producing approximately 200 nm of dense film. Diethylzinc was used as the zinc source, UHP oxygen (O2) as the oxygen source, and UHP argon as both the carrier and diluent gas. Nitrous (N2O) and nitric oxide (NO2) were also used both as potential oxygen sources in the pure state as well as mixed with oxygen in the chamber and for nitrogen doping of the growing film. Major impurities of C, H, and N were incorporated into the films with the majority of the incorporation occurring during the low temperature step. Films grown using N2O + O2 contained an average of 5 x 1017 cm-3 atomic nitrogen while films using NO2 + O2 had an average nitrogen concentrations of 9 x 1019 cm-3. Needle microstructures were observed for low temperature layers using O2 and N2O + O2, while networked structures formed when using NO2 + O2. The surface of the densified films contained hexagonal pits that increased in number and depth with an increase in film thickness. Triple-axis XRD measurements indicated that the crystal structure of the films mimic the underlying substrates. A comparative analysis of undoped and N-doped films using capacitance voltage and photoluminescence measurements showed that the N-doped films were more insulating than the undoped films and the incorporation of nitrogen decreases the amount of excitonic peaks observed in the PL spectra. The 3.367 eV ionized donor bound exciton becomes dominant in N-doped films relative to the 3.361 eV donor bound exciton that dominates the undoped films. A preliminary inductively coupled plasma etching study determined that the smoothest sidewalls and surfaces were obtained using an.
Book Synopsis Zinc Oxide Bulk, Thin Films and Nanostructures by : Chennupati Jagadish
Download or read book Zinc Oxide Bulk, Thin Films and Nanostructures written by Chennupati Jagadish and published by Elsevier. This book was released on 2011-10-10 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt: With an in-depth exploration of the following topics, this book covers the broad uses of zinc oxide within the fields of materials science and engineering: - Recent advances in bulk , thin film and nanowire growth of ZnO (including MBE, MOCVD and PLD), - The characterization of the resulting material (including the related ternary systems ZgMgO and ZnCdO), - Improvements in device processing modules (including ion implantation for doping and isolation ,Ohmic and Schottky contacts , wet and dry etching), - The role of impurities and defects on materials properties - Applications of ZnO in UV light emitters/detectors, gas, biological and chemical-sensing, transparent electronics, spintronics and thin film
Book Synopsis Growth and Characterization of Epitaxial ZnO Thin Films on GaN(0001) Epilayers and ZnO(0001) Substrates Using Metalorganic Chemical Vapor Depositon by : Jonathan Mark Pierce
Download or read book Growth and Characterization of Epitaxial ZnO Thin Films on GaN(0001) Epilayers and ZnO(0001) Substrates Using Metalorganic Chemical Vapor Depositon written by Jonathan Mark Pierce and published by . This book was released on 2004 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: epitaxial, ZnO, doping, thin films.
Author :Sanders, Brian Wayne Publisher :National Library of Canada = Bibliothèque nationale du Canada ISBN 13 :9780315762718 Total Pages :181 pages Book Rating :4.7/5 (627 download)
Book Synopsis Growth and Characterization of Electrodeposited Zinc Sulphide and Chemical Vapour Atomic Layer Deposited Zinc Oxide, Sulphide, and Oxysulphide Thin Films [microform] by : Sanders, Brian Wayne
Download or read book Growth and Characterization of Electrodeposited Zinc Sulphide and Chemical Vapour Atomic Layer Deposited Zinc Oxide, Sulphide, and Oxysulphide Thin Films [microform] written by Sanders, Brian Wayne and published by National Library of Canada = Bibliothèque nationale du Canada. This book was released on 1991 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis MOCVD Growth and Characterization of N-type Zinc Oxide Thin Films by : Tammy Ben-Yaacov
Download or read book MOCVD Growth and Characterization of N-type Zinc Oxide Thin Films written by Tammy Ben-Yaacov and published by . This book was released on 2010 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: In summary, this thesis describes the growth of ZnO(0001) films by MOCVD, the progress in developing ZnO material with excellent surface morphology, high crystal quality, and controllable n-type doping, as well as its application to GaN-based optoelectronic devices as a p-contact material.
Download or read book ZnO Thin Films written by Paolo Mele and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zinc oxide (ZnO) is an n-type semiconductor with versatile applications such as optical devices in ultraviolet region, piezoelectric transducers, transparent electrode for solar cells and gas sensors. This book "ZnO Thin Films: Properties, Performance and Applications" gives a deep insight in the intriguing science of zinc oxide thin films. It is devoted to cover the most recent advances and reviews the state of the art of ZnO thin films applications involving energy harvesting, microelectronics, magnetic devices, photocatalysis, photovoltaics, optics, thermoelectricity, piezoelectricity, electrochemistry, temperature sensing. It serves as a fundamental information source on the techniques and methodologies involved in zinc oxide thin films growth, characterization, post-deposition plasma treatments and device processing. This book will be invaluable to the experts to consolidate their knowledge and provide insight and inspiration to beginners wishing to learn about zinc oxide thin films.
Download or read book Chemical Abstracts written by and published by . This book was released on 1991 with total page 2682 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Epitaxial Growth and Characterization of Zn(Mg)O Thin Films by : Thomas Andreas Wassner
Download or read book Epitaxial Growth and Characterization of Zn(Mg)O Thin Films written by Thomas Andreas Wassner and published by . This book was released on 2012 with total page 225 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of Epitaxial Piezoelectric and Semiconductor Films by : K. M. Lakin
Download or read book Growth and Characterization of Epitaxial Piezoelectric and Semiconductor Films written by K. M. Lakin and published by . This book was released on 1979 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report contains details of the research work carried out on a one-year project on the growth and characterization of ZnO and AlN piezoelectric thin films. Material growth systems are reported for ZnO using the zinc vapor reaction with CO2, ZnCl2 with O2, and the latest metal-organic process. The growth of insulating ZnO has been achieved using lithium doping during film growth. Initial results are reported for a new AlN growth process that shows promise of overcoming some previous growth problems. (Author).
Book Synopsis Growth and Characterization of Zinc Oxide Thin Films for Light Emitting Diodes by : Hyun-Sik Kim
Download or read book Growth and Characterization of Zinc Oxide Thin Films for Light Emitting Diodes written by Hyun-Sik Kim and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ZnO-based light emitting diodes were fabricated on c-plane sapphire using ZnO:P/ Zn[subscript 0.9]Mg[subscript 0.1]O/ZnO/ Zn[subscript 0.9]Mg[subscript 0.1]O/ZnO:Ga p-i-n heterostructures. The p-i-n heterojunction diodes are rectifying and show light emission under forward bias. The electroluminescence spectra shows deep level emission at low bias, but near band edge ultraviolet emission at high voltage bias. A decrease in leakage currents in as-fabricated structures was achieved via low temperature oxygen annealing.
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1420 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical Characterization of ZnO Thin Films Grown by Molecular Beam Epitaxy by : Vladimir Petukhov
Download or read book Electrical Characterization of ZnO Thin Films Grown by Molecular Beam Epitaxy written by Vladimir Petukhov and published by . This book was released on 2012 with total page 101 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Epitaxial Growth and Characterization of Zinc Selenide Based Semiconductor Thin-films by : Jarmo Lilja
Download or read book Epitaxial Growth and Characterization of Zinc Selenide Based Semiconductor Thin-films written by Jarmo Lilja and published by . This book was released on 1990 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metal-organic Chemical Vapor Deposition of Indium Oxide Based Transparent Conducting Oxide Thin Films by : Jun Ni
Download or read book Metal-organic Chemical Vapor Deposition of Indium Oxide Based Transparent Conducting Oxide Thin Films written by Jun Ni and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Four novel diamine adducts of bis(hexafluoroacetylacetonato)zinc [Zn(hfa)2·(diamine)] can be synthesized in a single step reaction. Single crystal x-ray diffraction studies reveal monomeric, six-coordinate structures. The thermal stabilities and vapor phase transport properties of these complexes are considerably greater than those of conventional solid/liquid zinc metal-organic chemical vapor deposition (MOCVD) precursors. Of the four complexes, bis(1,1,1,5,5,5-hexafluoro-2,4-pentadionato)(N,N '-diethylethylenediamine)zinc [Zn(hfa)2 ( N,N'-DEA)], is particularly effective in the growth of thin films of the transparent conducting oxide Zn- and Sn-doped In2O3 (ZITO) due to its superior volatility and low melting point of 64°C.
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