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Growth And Characterization Of Epitaxially Aligned Titanium Nitride Thin Films On Silicon By Orthogonally Crossed Beam Pulsed Laser Deposition
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Book Synopsis Growth and Characterization of Epitaxially Aligned Titanium Nitride Thin Films on Silicon by Orthogonally Crossed-beam Pulsed Laser Deposition by : Sukill Kang
Download or read book Growth and Characterization of Epitaxially Aligned Titanium Nitride Thin Films on Silicon by Orthogonally Crossed-beam Pulsed Laser Deposition written by Sukill Kang and published by . This book was released on 2001 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2002 with total page 684 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Epitaxial Growth and Characterization of Thin Films and Superlattices of Wide Band Gap II-VI Semiconductors Grown by Pulsed Laser Deposition by : Shengxi Duan
Download or read book Epitaxial Growth and Characterization of Thin Films and Superlattices of Wide Band Gap II-VI Semiconductors Grown by Pulsed Laser Deposition written by Shengxi Duan and published by . This book was released on 1994 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Pulsed-laser Deposition of Titanium Nitride by :
Download or read book Pulsed-laser Deposition of Titanium Nitride written by and published by . This book was released on 1995 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: The pulsed-laser deposition technique has been used to form thin films of TiN on (100)oriented single crystal substrates of silicon and rocksalt. Using atomic force microscopy, it was revealed that TiN films grown on silicon at substrate temperatures ranging from 50 C to 500 C were extremely smooth -- the mean roughness being (approximately) 0.2 nm. Thin TiN films deposited on freshly cleaved NaCl were found to be epitaxial at substrate temperatures as low as 50 C. Epitaxy in this latter system is believed to be due to the structural similarity between film and substrate and the almost exact 4:3 coincident site lattice.
Book Synopsis Titanium Nitride and Silicon Nitride Films Grown by Pulsed Laser Deposition by : Won-Seok Kim
Download or read book Titanium Nitride and Silicon Nitride Films Grown by Pulsed Laser Deposition written by Won-Seok Kim and published by . This book was released on 1999 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of Epitaxial Oxide Thin Films by : Ashish Garg
Download or read book Growth and Characterization of Epitaxial Oxide Thin Films written by Ashish Garg and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial oxide thin films are used in many technologically important device applications. This work deals with the deposition and characterization of epitaxial WO3 and SrBi2Ta2O9 (SBT) thin films on single crystal oxide substrates. WO3 thin films were chosen as a subject of study because of recent findings of superconductivity at surfaces and twin boundaries in the bulk form of this oxide. Highly epitaxial thin films would be desirable in order to be able to create a device within a film without patterning it, by locally creating superconducting regions (e.g. twins) within an otherwise defect free film by reducing or doping the film with Na. Films were deposited by reactive magnetron sputtering at various temperatures on single crystal SrTiO3 (100) and R-sapphire substrates. X-ray diffraction studies showed that the optimised films were highly (001) oriented, quality of epitaxy improving with decreasing deposition temperature. AFM studies revealed columnar growth of these films. Films were heat treated with Na vapour in order to reduce or dope them with Na. Low temperature measurements of the reduced films did not show existence of any superconductivity. SBT is a ferroelectric oxide and its thin films are attractive candidates for non-volatile ferroelectric random access memory (FRAM) applications. High structural anisotropy leads to a high degree of anisotropy in its ferroelectric properties which makes it essential to study epitaxial SBT films of different orientations. In this study, SBT films of different orientations were deposited on different single crystal substrates by pulsed laser ablation. Highly epitaxial c-axis oriented and smooth SBT films were deposited on SrTiO3 (100) substrates. AFM studies revealed the growth of these films by 3-D Stranski-Krastanov mode. However, these films did not exhibit any ferroelectric activity. Highly epitaxial (116)-oriented films were deposited on SrTiO3 (110) substrates. These films were also very smooth with root mean square (RMS) roughness of 15-20 Å. Films deposited on TiO2 (110) were partially a-/b-axis oriented and showed the formation of c-axis oriented SBT and many impurities. Completely a-/b-axis oriented SBT films were deposited on LaSrAlO4 (110) substrates. Films deposited at non-optimal growth temperatures showed the formation of many impurities. Attempts were also made towards depositing Sr2RuO4 films on LaSrAlO4 (110) substrates, which can act as a bottom electrode for ferroelectric SBT films.
Book Synopsis Pulsed Laser Deposition of Aluminum Nitride and Silicon Nitride Thin Films by : Xiangqun Xu
Download or read book Pulsed Laser Deposition of Aluminum Nitride and Silicon Nitride Thin Films written by Xiangqun Xu and published by . This book was released on 1993 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of Ti-Si-N Films Grown by Pulsed Laser Deposition with a PLD TOF-QMS Plume Study by : Matthew B. Treat
Download or read book Growth and Characterization of Ti-Si-N Films Grown by Pulsed Laser Deposition with a PLD TOF-QMS Plume Study written by Matthew B. Treat and published by . This book was released on 2003 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Pulsed Laser Deposition Assisted Synthesis and Characterization of Titanium Dioxide Thin Films by : Jermaine Maurice Bradley
Download or read book Pulsed Laser Deposition Assisted Synthesis and Characterization of Titanium Dioxide Thin Films written by Jermaine Maurice Bradley and published by . This book was released on 2005 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt: Investigates the structural and mechanical properties of pulsed laser deposited (PLD) titania (TiO2) thin films. Uses nano-indentation to determine the mechanical properties of the films as a function of the growth parameters.
Book Synopsis Ultrahigh Vacuum Metalorganic Chemical Vapor Deposition and in Situ Characterization of Nanoscale Titanium Dioxide Films by : Polly Wanda Chu
Download or read book Ultrahigh Vacuum Metalorganic Chemical Vapor Deposition and in Situ Characterization of Nanoscale Titanium Dioxide Films written by Polly Wanda Chu and published by . This book was released on 1994 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin titanium dioxide films were produced by metalorganic chemical vapor deposition on sapphire(0001) in an ultrahigh vacuum (UHV) chamber. A method was developed for producing controlled submonolayer depositions from titanium isopropoxide precursor. Film thickness ranged from 0.1 to 2.7 nm. In situ X-ray photoelectron spectroscopy (XPS) was used to determine film stoichiometry with increasing thickness. The effect of isothermal annealing on desorption was evaluated. Photoelectron peak shapes and positions from the initial monolayers were analyzed for evidence of interface reaction. Deposition from titanium isopropoxide is divided into two regimes: depositions below and above the pyrolysis temperature. This temperature was determined to be 300 deg C. Controlled submonolayers of titanium oxide were produced by cycles of dosing with titanium isopropoxide vapor below and annealing above 300 deg C. Precursor adsorption below the pyrolysis temperature was observed to saturate after 15 minutes of dosing. The quantity absorbed was shown to have an upper limit of one monolayer. The stoichiometry of thin films grown by the cycling method were determined to be TiO2. Titanium dioxide film stoichiometry was unaffected by isothermal annealing at 700 deg C. Annealing produced a decrease in film thickness. This was explained as due to desorption. Desorption ceased at approximately 2.5 to 3 monolayers, suggesting bonding of the initial monolayers of film to sapphire is stronger than to itself. Evidence of sapphire reduction at the interface by the depositions was not observed. The XPS O is peak shifted with increased film thickness. The shifts were consistent with oxygen in sapphire and titanium dioxide having different O is photoelectron peak positions. Simulations showed the total shifts for thin films ranging in thickness of 0.1 to 2.7 nm to be -0.99 to -1.23 eV. Thick films were produced for comparison.
Book Synopsis Growth of Semiconductor Thin Films by Pulsed Laser Deposition by : Yilu Li
Download or read book Growth of Semiconductor Thin Films by Pulsed Laser Deposition written by Yilu Li and published by . This book was released on 2016 with total page 97 pages. Available in PDF, EPUB and Kindle. Book excerpt: Pulsed ultraviolet light from a XeF excimer laser was used to grow thin films of zinc oxide and tin dioxide on (111) p-type silicon wafers within a versatile high vacuum laser deposition system. This pulsed laser deposition system was self-designed and self-built. Parameters such as pressure, target temperature, and distance from the target to the substrate can be adjusted in the system. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction spectroscopy, Raman spectroscopy and ellipsometry were used to analyze the structures and properties of ZnO and SnO2 thin films. The critical temperature required to fabricate a crystalline ZnO thin film by pulsed laser deposition was found and has been confirmed. For the SnO2 thin film, the critical temperature required to generate a crystalline structure could not be found because of the temperature limit of the substrate heater used in the experiment. In SnO2 thin films, thermal annealing has been used to convert into crystalline structure with (110), (101) and (211) orientations. After fabricating the amorphous SnO2 thin films, they were put into an oven with specific temperatures to anneal them. The minimum annealing temperature range was found for converting the amorphous SnO2 thin films into SnO2 thin films with a crystalline structure. Thermal annealing has also been applied to some amorphous ZnO thin films which were fabricated under the critical temperature required to produce crystalline ZnO thin films. The minimum annealing temperature range for amorphous ZnO thin films was found and only one orientation (002) shown after annealing. Laser annealing technology has also been applied for converting both amorphous ZnO and SnO2 thin films, and results show that this method was not well suited for this attempt. ZnO thin films and SnO2 thin films with a crystalline structure have inportant widely used in industry, for example, application in devices such as solar cells and UV or blue-light-emitting devices. The aim of this research is to help improving the manufacturing process of ZnO and SnO2 thin films.
Book Synopsis Growth and Characterization of Barium Strontium Titanate Thin Films with Enhanced Electrical Properties Using Pulsed Laser Deposition by : Anuranjan Srivastava
Download or read book Growth and Characterization of Barium Strontium Titanate Thin Films with Enhanced Electrical Properties Using Pulsed Laser Deposition written by Anuranjan Srivastava and published by . This book was released on 1999 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Plasma-Assisted Atomic Layer Deposition of III-Nitride Thin Films by : Çağla Özgit-Akgün
Download or read book Plasma-Assisted Atomic Layer Deposition of III-Nitride Thin Films written by Çağla Özgit-Akgün and published by LAP Lambert Academic Publishing. This book was released on 2014-03 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-nitride compound semiconductors (AlN, GaN, InN) and their alloys have emerged as versatile and high-performance materials for a wide range of electronic and optoelectronic device applications. Although high quality III-nitride thin films can be grown at high temperatures (>1000 C) with significant rates, deposition of these films on temperature-sensitive device layers and substrates necessitates the adaptation of low-temperature methods such as atomic layer deposition (ALD). When compared to other low-temperature thin film deposition techniques, ALD stands out with its self-limiting growth mechanism, which enables the deposition of highly uniform and conformal thin films with sub-angstrom thickness control. These unique characteristics make ALD a powerful method especially for depositing films on nanostructured templates, as well as preparing alloy thin films with well-defined compositions. This monograph reports on the development of low-temperature ( 200 C) plasma-assisted ALD processes for III-nitrides, and presents detailed characterization results for the deposited thin films and fabricated nanostructures."
Book Synopsis Nucleation, Epitaxial Growth, and Characterization of [beta]-SiC Thin Films on Si by Rapid Thermal Chemical Vapor Deposition by : JiPing Li
Download or read book Nucleation, Epitaxial Growth, and Characterization of [beta]-SiC Thin Films on Si by Rapid Thermal Chemical Vapor Deposition written by JiPing Li and published by . This book was released on 1994 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Plasma Assisted Synthesis and Physical Chemical Characterization of Titanium Nitride Films by : Michael Robert Hilton
Download or read book Plasma Assisted Synthesis and Physical Chemical Characterization of Titanium Nitride Films written by Michael Robert Hilton and published by . This book was released on 1987 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Formation and Characterization of Ferroelectric Thin-films Deposited by Pulsed-laser Ablation by : Christopher Scarfone
Download or read book Formation and Characterization of Ferroelectric Thin-films Deposited by Pulsed-laser Ablation written by Christopher Scarfone and published by . This book was released on 1991 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Epitaxial Growth and Characterization of II-VI-semiconductor, One Dimensional Nanostructures and Thin Films by : Zuoming Zhu
Download or read book Epitaxial Growth and Characterization of II-VI-semiconductor, One Dimensional Nanostructures and Thin Films written by Zuoming Zhu and published by . This book was released on 2006 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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