GaN and Related Alloys: Volume 537

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ISBN 13 :
Total Pages : 1056 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis GaN and Related Alloys: Volume 537 by : S. J. Pearton

Download or read book GaN and Related Alloys: Volume 537 written by S. J. Pearton and published by . This book was released on 1999-09-14 with total page 1056 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.

GaN-based Materials and Devices

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Publisher : World Scientific
ISBN 13 : 9812388443
Total Pages : 295 pages
Book Rating : 4.8/5 (123 download)

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Book Synopsis GaN-based Materials and Devices by : Michael Shur

Download or read book GaN-based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride

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Publisher : BoD – Books on Demand
ISBN 13 : 3752884924
Total Pages : 166 pages
Book Rating : 4.7/5 (528 download)

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Book Synopsis Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride by : Patrick Hofmann

Download or read book Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride written by Patrick Hofmann and published by BoD – Books on Demand. This book was released on 2018-08-15 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation employs doping to investigate basic gallium nitride (GaN) crystal properties and to solve challenges of the hydride vapour phase epitaxy (HVPE) growth process. Whereas the first chapter is a short introduction to the history of the GaN single crystal growth, the 2nd chapter introduces to current crystal growth techniques, discusses properties of the GaN material system and the resulting influence on the applicable crystal growth techniques. HVPE, as a vapour phase epitaxy crystal growth method will be explained in greater detail, with focus on the used vertical reactor and its capabilities for doping. The 3rd chapter then focusses on point defects in GaN, specifically on intentionally introduced extrinsic point defects used for doping purposes, i.e. to achieve p-type, n-type or semi-insulating behaviour. Different dopants will be reviewed before the diffusion of point defects in a solid will be discussed. The in-situ introduction of iron, manganese, and carbon during crystal growth is employed in chapter 4 to compensate the unintentional doping (UID) of the GaN crystals, and therefore to achieve truly semi-insulating behaviour of the HVPE GaN. However the focus of this chapter lies on the characterisation of the pyroelectric coefficient (p), as semi-insulating properties are a necessary requirement for the applied Sharp-Garn measurement method. The creation of tensile stress due to in-situ silicon doping during GaN crystal growth is the topic of the 5th chapter. The tensile stress generation effect will be reproduced and the strain inside the crystal will be monitored ex-situ employing Raman spectroscopy. The n-type doping is achieved by using a vapour phase doping line and a process is developed to hinder the tensile strain generation effect. The 6th chapter concentrates on the delivery of the doping precursor via a solid state doping line, a newly developed doping method. Similar to chapter 5, the doping line is characterised carefully before the germanium doping is employed to the GaN growth. The focus lies on the homogeneity of the germanium doping and it is compared compared to the silicon doping and the vapour phase doping line. Benefits and drawbacks are discussed in conjunction with the obtained results. The germanium doping via solid state doping line is applied to the HVPE GaN growth process to measure accurately growth process related properties unique to the applied set of GaN growth parameters.

GaN and Related Alloys

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Publisher :
ISBN 13 :
Total Pages : 872 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis GaN and Related Alloys by :

Download or read book GaN and Related Alloys written by and published by . This book was released on 2004 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Optical Properties of Semiconductor Nanostructures

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Publisher : Springer Science & Business Media
ISBN 13 : 9401141584
Total Pages : 443 pages
Book Rating : 4.4/5 (11 download)

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Book Synopsis Optical Properties of Semiconductor Nanostructures by : Marcin L. Sadowski

Download or read book Optical Properties of Semiconductor Nanostructures written by Marcin L. Sadowski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 443 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optical methods for investigating semiconductors and the theoretical description of optical processes have always been an important part of semiconductor physics. Only the emphasis placed on different materials changes with time. Here, a large number of papers are devoted to quantum dots, presenting the theory, spectroscopic investigation and methods of producing such structures. Another major part of the book reflects the growing interest in diluted semiconductors and II-IV nanosystems in general. There are also discussions of the fascinating field of photonic crystals. `Classical' low dimensional systems, such as GsAs/GaAlAs quantum wells and heterostructures, still make up a significant part of the results presented, and they also serve as model systems for new phenomena. New materials are being sought, and new experimental techniques are coming on stream, in particular the combination of different spectroscopic modalities.

GaN and Related Alloys - 1999: Volume 595

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Publisher :
ISBN 13 :
Total Pages : 1070 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis GaN and Related Alloys - 1999: Volume 595 by : Thomas H. Myers

Download or read book GaN and Related Alloys - 1999: Volume 595 written by Thomas H. Myers and published by . This book was released on 2000-05-05 with total page 1070 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.

High-temperature Ordered Intermetallic Alloys

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Publisher :
ISBN 13 :
Total Pages : 882 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis High-temperature Ordered Intermetallic Alloys by :

Download or read book High-temperature Ordered Intermetallic Alloys written by and published by . This book was released on 1999 with total page 882 pages. Available in PDF, EPUB and Kindle. Book excerpt:

High-Temperature Ordered Intermetallic Alloys VIII: Volume 552

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Publisher :
ISBN 13 :
Total Pages : 864 pages
Book Rating : 4.4/5 (91 download)

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Book Synopsis High-Temperature Ordered Intermetallic Alloys VIII: Volume 552 by : Easo P. George

Download or read book High-Temperature Ordered Intermetallic Alloys VIII: Volume 552 written by Easo P. George and published by . This book was released on 1999-07-19 with total page 864 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Luminescent Materials: Volume 560

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Publisher :
ISBN 13 :
Total Pages : 392 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Luminescent Materials: Volume 560 by : Joanna McKittrick

Download or read book Luminescent Materials: Volume 560 written by Joanna McKittrick and published by . This book was released on 1999-09-21 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Luminescent materials are of interest to members of the spectroscopic, basic science, engineering and display communities. This book presents a wide range of topics from basic research of fluorescence to applications-driven research on phosphors and scintillators. Papers on various luminescent, fluorescent or phosphorescent mechanisms arising in inorganic crystalline and noncrystalline materials, as well as in organic materials, are featured. The use of fluorescence as a sensing technique has emerged as a sensitive and noninvasive way to probe biological activity or measure physical phenomena. To that end, progress in understanding fluorescence, the development of novel applications of fluorescence, and novel material structures are addressed. Phosphors for the emerging flat-panel-display industry are also highlighted. Topics include: inorganic phosphors; thin-film phosphors; synthesis, processing and characterization; mechanisms and defects; organic luminescence and theory and luminescence sensors.

Solid-State Chemistry of Inorganic Materials II: Volume 547

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Publisher :
ISBN 13 :
Total Pages : 568 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Solid-State Chemistry of Inorganic Materials II: Volume 547 by : Susan M. Kauzlarich

Download or read book Solid-State Chemistry of Inorganic Materials II: Volume 547 written by Susan M. Kauzlarich and published by . This book was released on 1999-04 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Organic/Inorganic Hybrid Materials II: Volume 576

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Publisher :
ISBN 13 :
Total Pages : 488 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Organic/Inorganic Hybrid Materials II: Volume 576 by : Lisa C. Klein

Download or read book Organic/Inorganic Hybrid Materials II: Volume 576 written by Lisa C. Klein and published by . This book was released on 1999-11-10 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Materials in Space - Science, Technology and Exploration: Volume 551

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Publisher :
ISBN 13 :
Total Pages : 336 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Materials in Space - Science, Technology and Exploration: Volume 551 by : Aloysius F. Hepp

Download or read book Materials in Space - Science, Technology and Exploration: Volume 551 written by Aloysius F. Hepp and published by . This book was released on 1999-11-26 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Liquid Crystals Materials and Devices: Volume 559

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Publisher :
ISBN 13 :
Total Pages : 312 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Liquid Crystals Materials and Devices: Volume 559 by : Timothy J. Bunning

Download or read book Liquid Crystals Materials and Devices: Volume 559 written by Timothy J. Bunning and published by . This book was released on 1999-08-11 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Liquid crystal (LC) materials and devices play a central role in numerous established and emerging technologies. This book focuses on several large areas of research including polymer-dispersed liquid crystal technology and twisted smectic materials and applications, as well as nontraditional LC materials and applications. Various aspects of liquid crystal composite technology are featured. Of note is the work concentrating on the use of holography to imprint information into thin films of these systems. Three different approaches for employing holography with liquid crystal materials are discussed. In the ferroelectric liquid crystal arena, the intricacies of different chiral smectic-C architectures are described using detailed X-ray structural experiments on freestanding films. The differences between a molecule and a phase are explored. A number of nondisplay applications using this class of materials are presented and include topics such as adaptive optics, real-time holography and fiber-to-fiber interconnects. Also discussed are glass-forming liquid crystalline films and their ability to polarize photoluminescent emission, their utility in the fabrication of mid-wavelength infrared polarizers, and their utility in the fabrication of bistable electro-optical elements and broadband reflectors.

Organic Nonlinear Optical Materials and Devices: Volume 561

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Publisher :
ISBN 13 :
Total Pages : 248 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Organic Nonlinear Optical Materials and Devices: Volume 561 by : B. Kippelen

Download or read book Organic Nonlinear Optical Materials and Devices: Volume 561 written by B. Kippelen and published by . This book was released on 1999-08-11 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: The field of organic optical materials is rapidly growing, and advances are being made both in attaining a deeper understanding of device phenomena and in designing improved materials for thin films, fibers and waveguides. This book offers an interdisciplinary discussion of research on electronic and photonic devices made with organic and polymeric materials. The 1999 MRS Spring Meeting was highlighted by several major advances in fields ranging from nonlinear absorbers and electro-optic polymers, to photorefractive polymers, organic transistors and electroluminescent materials and devices for displays. This book highlights developments in materials chemistry and physics relevant to such devices and strikes a balance between basic science and technology. Topics include: nonlinear optical materials; photorefractive polymers; and electronic and light-emitting materials.

Advanced Hard and Soft Magnetic Materials: Volume 577

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Publisher :
ISBN 13 :
Total Pages : 656 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Advanced Hard and Soft Magnetic Materials: Volume 577 by :

Download or read book Advanced Hard and Soft Magnetic Materials: Volume 577 written by and published by . This book was released on 1999-11-03 with total page 656 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Flat-Panel Displays and Sensors - Principles, Materials, and Processes: Volume 558

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Publisher :
ISBN 13 :
Total Pages : 648 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Flat-Panel Displays and Sensors - Principles, Materials, and Processes: Volume 558 by : Babu R. Chalamala

Download or read book Flat-Panel Displays and Sensors - Principles, Materials, and Processes: Volume 558 written by Babu R. Chalamala and published by . This book was released on 2000-05 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics: Volume 567

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Publisher :
ISBN 13 :
Total Pages : 650 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics: Volume 567 by : H. R. Huff

Download or read book Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics: Volume 567 written by H. R. Huff and published by . This book was released on 1999-09 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt: Device scaling has been the engine driving the continued pervasiveness of the microelectronics revolution. The SIA roadmap calls for 4-5nm films (oxide equivalent thickness) in 2000, and