Gallium Nitride Vertical Devices For High Power And High Frequency Applications

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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Author : Gaudenzio Meneghesso
Publisher : Springer
ISBN 13 : 331977994X
Total Pages : 242 pages
Book Rating : 4.3/5 (197 download)

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Book Synopsis Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion by : Gaudenzio Meneghesso

Download or read book Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion written by Gaudenzio Meneghesso and published by Springer. This book was released on 2018-05-12 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

Gallium Nitride Vertical Devices for High-power and High-frequency Applications

Author : Siwei Li
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.5/5 (825 download)

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Book Synopsis Gallium Nitride Vertical Devices for High-power and High-frequency Applications by : Siwei Li

Download or read book Gallium Nitride Vertical Devices for High-power and High-frequency Applications written by Siwei Li and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride (GaN) has gained considerable interest in the areas of power electronics and radio frequency (RF) devices in recent years due to its significantly higher material figure-of-merits (FOMs) than silicon (Si). The capability of operating faster as power switches also overwhelms another wide-bandgap contender, silicon carbide (SiC), especially for applications at ~600-1200 V level. GaN devices with a lateral topology such as high electron mobility transistors (HEMTs) have been extensively studied, while the development of vertical devices on high-quality free-standing GaN substrates is opening new opportunities towards improved power handling capability in high-power applications. There are still science and technology issues associated with GaN that limit its applications in high-power scenarios. One of the fundamental properties is its avalanche behavior, which is expected to be considered as a benchmark for the material but was rarely seen in GaN devices grown on foreign substrates, including sapphire, Si and SiC. Avalanche is observed and gaining increasing attention recently with the improvement of GaN-on-GaN substrate, especially in diodes. Several issues of GaN in high-power and high-speed applications are addressed in the present work. Edge terminations play a vital role in GaN devices targeting a high voltage range, and enable avalanche by optimizing the electric filed distribution, eliminating peak electric field at device edges. An ion-compensated moat etch structure is studied on GaN vertical p-n diodes. Parameters including moat etching depth and ion implantation dose are optimized. P-n diodes with a breakdown voltage (V[subscript BR]) of 1500 V and a specific on-state resistance (R[subscript ON,sp]) of 0.7 m[omega]·cm2 is demonstrated with the optimized structure, showing a device FOM of 3.2 GW·cm−2 and avalanche behavior. With avalanche performance as a prerequisite confirmed on vertical p-n diodes on bulk GaN substrates with dislocation density ranging from 1e4 cm−2 to 1e6 cm−2, the effect of dislocation density on device behavior, especially off-state leakage current is experimentally and studied in detail. The leakage mechanism is analyzed by considering its relationship to electric field and temperature. Lower leakage could be achieved on the substrate with 1e4 cm−2 dislocation density, with variable-range-hopping (VRH) procedure dominating low electric field range and Poole-Frenkel (PF) effect dominating the higher part, while VRH and other more trap-related processes may play more roles on the substrate with 1e6 cm−2 dislocation density. Large current capability is another factor for high-power applications. A DC current up to 50 A is successfully demonstrated on large-area p-n diodes by applying backside gold-to-gold thermal compression bonding. A successful scaling-up is achieved with essential factors studied. There have been few works on the RF performance of GaN vertical devices though the lateral RF devices have been widely explored. To study RF properties of GaN vertical devices, a Silvaco TCAD simulation model is established for nitride (N)-polar GaN current aperture vertical electron transistor (CAVET) based on a fitting of N-polar lateral HEMT experimental results. DC and RF properties of an N-polar CAVET are simulated, and a maximum output power of 15 W·mm−1 is expected. To experimentally demonstrate RF characteristics of a CAVET, the 1st-generation RF CAVET is then built on gallium (Ga)-polar substrate. Based on the DC characteristics, a current gain cutoff frequency (fT) at ~13 GHz is expected.

GaN-based Vertical Power Devices

Author : Yuhao Zhang (Ph. D.)
Publisher :
ISBN 13 :
Total Pages : 170 pages
Book Rating : 4.:/5 (1 download)

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Book Synopsis GaN-based Vertical Power Devices by : Yuhao Zhang (Ph. D.)

Download or read book GaN-based Vertical Power Devices written by Yuhao Zhang (Ph. D.) and published by . This book was released on 2017 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power electronics based on Gallium Nitride (GaN) is expected to significantly reduce the losses in power conversion circuits and increase the power density. This makes GaN devices very exciting candidates for next-generation power electronics, for the applications in electric vehicles, data centers, high-power and high-frequency communications. Currently, both lateral and vertical structures are considered for GaN power devices. In particular, vertical GaN power devices have attracted significant attention recently, due to the potential for achieving high breakdown voltage and current levels without enlarging the chip size. In addition, these vertical devices show superior thermal performance than their lateral counterparts. This PhD thesis addresses several key obstacles in developing vertical GaN power devices. The commercialization of vertical GaN power devices has been hindered by the high cost of bulk GaN. The first project in this PhD thesis demonstrated the feasibility of making vertical devices on a low-cost silicon (Si) substrate for the first time. The demonstrated high performance shows the great potential of low-cost vertical GaN-on-Si devices for 600-V level high-current and high-power applications. This thesis has also studied the origin of the off-state leakage current in vertical GaN pn diodes on Si, sapphire and GaN substrates, by experiments, analytical calculations and TCAD simulations. Variable-range-hopping through threading dislocations was identified as the main off-state leakage mechanism in these devices. The design space of leakage current of vertical GaN devices has been subsequently derived. Thirdly, a novel GaN vertical Schottky rectifier with trench MIS structures and trench field rings was demonstrated. The new structure greatly enhanced the reverse blocking characteristics while maintaining a Schottky-like good forward conduction. This new device shows great potential for using advanced vertical Schottky rectifiers for high-power and high-frequency applications. Finally, we investigated a fundamental and significant challenge for GaN power devices: the lack of reliable and generally useable patterned pn junctions. Two approaches have been proposed to make lateral patterned pn junctions. Two devices, junction barrier Schottky devices and super-junction devices, have been designed and optimized. Preliminary experimental results were also demonstrated for the feasibility of making patterned pn junctions and fabricating novel power devices.

Power GaN Devices

Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Gallium Nitride (GaN)

Author : Farid Medjdoub
Publisher : CRC Press
ISBN 13 : 1482220040
Total Pages : 372 pages
Book Rating : 4.4/5 (822 download)

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Book Synopsis Gallium Nitride (GaN) by : Farid Medjdoub

Download or read book Gallium Nitride (GaN) written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

Gallium Nitride Power Devices

Author : Hongyu Yu
Publisher : CRC Press
ISBN 13 : 1351767615
Total Pages : 298 pages
Book Rating : 4.3/5 (517 download)

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Book Synopsis Gallium Nitride Power Devices by : Hongyu Yu

Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

GaN Technology

Author : Maurizio Di Paolo Emilio
Publisher : Springer Nature
ISBN 13 : 3031632389
Total Pages : 388 pages
Book Rating : 4.0/5 (316 download)

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Book Synopsis GaN Technology by : Maurizio Di Paolo Emilio

Download or read book GaN Technology written by Maurizio Di Paolo Emilio and published by Springer Nature. This book was released on with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Gallium Nitride Power Devices

Author : Hongyu Yu
Publisher : CRC Press
ISBN 13 : 1351767607
Total Pages : 301 pages
Book Rating : 4.3/5 (517 download)

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Book Synopsis Gallium Nitride Power Devices by : Hongyu Yu

Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

Vertical Gallium Nitride Fin Transistors for RF Applications

Author : Joshua Andrew Perozek
Publisher :
ISBN 13 :
Total Pages : 80 pages
Book Rating : 4.:/5 (12 download)

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Book Synopsis Vertical Gallium Nitride Fin Transistors for RF Applications by : Joshua Andrew Perozek

Download or read book Vertical Gallium Nitride Fin Transistors for RF Applications written by Joshua Andrew Perozek and published by . This book was released on 2020 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the development, fabrication, and characterization of the first vertical gallium nitride fin transistors for radio frequency applications. The basic device design is adapted from vertical fin power transistors with modifications made to improve frequency performance, system integration, and uniformity. Specifically, a new, self-aligned gate process allows for dramatic scaling of gate lengths; a highly uniform planarization process improves device yield and reliability; and layout adjustments reduce parasitics and allow for on-wafer, high-frequency testing of vertical devices. These advancements are a promising step in enabling the next generation of radio frequency electronics powered by gallium nitride.

GaN Transistors for Efficient Power Conversion

Author : Alex Lidow
Publisher : John Wiley & Sons
ISBN 13 : 1119594421
Total Pages : 470 pages
Book Rating : 4.1/5 (195 download)

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Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-12 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

Design and Fabrication of Nitrogen Polar Gallium Nitride Vertical Transistors for High-power and High-frequency Applications

Author : Saba Rajabi
Publisher :
ISBN 13 : 9781085572613
Total Pages : pages
Book Rating : 4.5/5 (726 download)

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Book Synopsis Design and Fabrication of Nitrogen Polar Gallium Nitride Vertical Transistors for High-power and High-frequency Applications by : Saba Rajabi

Download or read book Design and Fabrication of Nitrogen Polar Gallium Nitride Vertical Transistors for High-power and High-frequency Applications written by Saba Rajabi and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride (GaN) has remarkable potential to extend the silicon-based semiconductor industry, which is currently plateauing in performance due to its materials limits Any significant improvement comes with a price that may not be a sustainable way to support the need for next generation electronic devices. With a more efficient semiconductor, such as a GaN, engineers could design and fabricate compact devices with ultra-high-scale density, because of GaN’s high electric field strength, saturation velocity, and electron mobility. Studies have already indicated that GaN device technology has tremendous potential for high-frequency communications and photonic applications. Because of advances in growth on commercially feasible large-area substrates, high radio frequency (RF) power applications of GaN are approaching commercialization. The basic material properties of GaN translate to smaller devices, which can lead to higher operation frequencies and lower switching losses. At the same time, the component count and size of passives has decreased. To date, most reported GaN-based field effect transistors have been in a Gallium polar (Ga-polar) orientation. Recent reports have suggested that Nitrogen polar (N-polar) GaN device technology is highly attractive for high RF power applications. The reverse polarization field in N-polar GaN compared to Ga-polar GaN promises unique design advantages. For example, an Al(Ga)N back barrier induces two-dimensional electron gas (2DEG) in the GaN channel and simultaneously confines electrons into the channel. Because of improved electron confinement in the channel and the higher aspect ratio, N-polar devices can presumably achieve superior performance. Additionally, N-polar devices offer lower specific contact resistance since the contacts to the 2DEG occur through GaN rather than wider-bandgap AlGaN material, which is necessary in Ga-polar devices. Previous results have clearly established that vertical devices in the form of current aperture vertical electron transistors (CAVETs) produce dispersion-less output current-voltage (IV) characteristics with a higher blocking electric field than that of lateral devices. The electric field being buried in the bulk of the material is helpful to achieve dispersion-less output characteristics compared to high electron mobility transistors (HEMTs), where surface states cause “knee walkout” or current collapse under high frequencies. Therefore, merging a N-polar high aspect ratio channel with a vertical drift region, as a CAVET does, is an attractive design to accomplish higher RF power performance compared to lateral counterparts. An integral part of a CAVET is the current blocking layer (CBL), which blocks the current flow from all paths except the aperture. Ga-polar CAVETs have been developed with either a Mg-doped GaN CBL or [Mg2+] ion-implanted GaN CBL. The latter is an attractive technique since it can alleviate regrowth in trenches. Notably, Mg ions diffuse out during the channel regrowth process at high temperatures. An AlN interlayer with a thickness of less than a nanometer is an effective solution to stop Mg ions from diffusing out into the channel layer and thereby causing uncontrollable threshold voltage shifts. It is crucial to mention that an AlN back barrier is an essential part of the structure of a vertical N-polar device design, as it is necessary to form the 2DEG channel as well as a diffusion barrier to arrest Mg out-diffusion. Thus, it renders N-polar vertical devices an especially appealing class of devices for RF application.This dissertation aims to provide a physical understanding and insight regarding the N-polar CAVET as well as the device’s design, performance and thermal analysis.

Gallium Nitride Electronics for Cryogenic and High Frequency Applications

Author : Qingyun Xie (S.M.)
Publisher :
ISBN 13 :
Total Pages : 88 pages
Book Rating : 4.:/5 (119 download)

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Book Synopsis Gallium Nitride Electronics for Cryogenic and High Frequency Applications by : Qingyun Xie (S.M.)

Download or read book Gallium Nitride Electronics for Cryogenic and High Frequency Applications written by Qingyun Xie (S.M.) and published by . This book was released on 2020 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Cryogenic and high frequency electronics have received renewed attention due to their application in the control and readout electronics of quantum computing systems, among others. The potential of AlGaN/GaN HEMTs for cryogenic high frequency application was explored. The performance of AlGaN/GaN HEMTs with both conventional gate material (Ni/Au) and superconducting gate material (NbN) was studied at cryogenic temperature. Furthermore, in order to study device-circuit interaction of the devices, a simulation framework bridging the device-level and circuit-level was developed. The framework was tested on two device concepts, namely GaN p-channel FETs for complementary logic application and the vertical fin transistor for high power RF application.

Vertical Gallium Nitride PowerDevices: Fabrication and Characterisation

Author : Rico Hentschel
Publisher : BoD – Books on Demand
ISBN 13 : 3752641762
Total Pages : 156 pages
Book Rating : 4.7/5 (526 download)

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Book Synopsis Vertical Gallium Nitride PowerDevices: Fabrication and Characterisation by : Rico Hentschel

Download or read book Vertical Gallium Nitride PowerDevices: Fabrication and Characterisation written by Rico Hentschel and published by BoD – Books on Demand. This book was released on 2021-01-03 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Efficient power conversion is essential to face the continuously increasing energy consumption of our society. GaN based vertical power field effect transistors provide excellent performance figures for power-conversion switches, due to their capability of handling high voltages and current densities with very low area consumption. This work focuses on a vertical trench gate metal oxide semiconductor field effect transistor (MOSFET) with conceptional advantages in a device fabrication preceded GaN epitaxy and enhancement mode characteristics. The functional layer stack comprises from the bottom an n+/n--drift/p-body/n+-source GaN layer sequence. Special attention is paid to the Mg doping of the p-GaN body layer, which is a complex topic by itself. Hydrogen passivation of magnesium plays an essential role, since only the active (hydrogen-free) Mg concentration determines the threshold voltage of the MOSFET and the blocking capability of the body diode. Fabrication specific challenges of the concept are related to the complex integration, formation of ohmic contacts to the functional layers, the specific implementation and processing scheme of the gate trench module and the lateral edge termination. The maximum electric field, which was achieved in the pn- junction of the body diode of the MOSFET is estimated to be around 2.1 MV/cm. From double-sweep transfer measurements with relatively small hysteresis, steep subthreshold slope and a threshold voltage of 3 - 4 V a reasonably good Al2O3/GaN interface quality is indicated. In the conductive state a channel mobility of around 80 - 100 cm2/Vs is estimated. This value is comparable to device with additional overgrowth of the channel. Further enhancement of the OFF-state and ON-state characteristics is expected for optimization of the device termination and the high-k/GaN interface of the vertical trench gate, respectively. From the obtained results and dependencies key figures of an area efficient and competitive device design with thick drift layer is extrapolated. Finally, an outlook is given and advancement possibilities as well as technological limits are discussed.

Design and Fabrication of Vertical GaN Transistors for High-power and High-frequency Applications

Author : Wenwen Li
Publisher :
ISBN 13 : 9780355764277
Total Pages : pages
Book Rating : 4.7/5 (642 download)

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Book Synopsis Design and Fabrication of Vertical GaN Transistors for High-power and High-frequency Applications by : Wenwen Li

Download or read book Design and Fabrication of Vertical GaN Transistors for High-power and High-frequency Applications written by Wenwen Li and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride (GaN) is proving itself as the preferred material for high-power and high-frequency applications. Due to the increasing availability of bulk GaN substrates, vertical GaN transistors are coming to the forefront of research. Vertical structure is suitable for high-power applications as it minimizes surface-related dispersion issues prevailing in lateral high-electron-mobility transistors (HEMTs) and simultaneously provides a more economical solution for the same current rating. The two main devices studied and discussed in this thesis are Static Induction Transistors (SITs) and Metal Oxide Semiconductor Vertical Field Electron Transistors (MOSVFETs). Both structures are novel in their design with respect to GaN and relied on only GaN in their device structure. To achieve normally-off, high-voltage power switching, MOSVFET was designed and fabricated. Through proper design of the drift region thickness and doping parameters, an on-state resistance as low as 2.8 m[omega]·cm2 was achieved. The thesis also examines the effects of key parameters, such as electron mobility in the channel and in the bulk, gate to gate distance, and gate length on the on-state resistance, blocking voltage, and threshold voltage. Fully fabricated transistors were realized with different gate dielectrics. With SiN as the gate insulator, the gate was able to modulate the channel. However, with PEALD Al2O3 at the GaN and metal interface, the Fermi level pinning at the interface resulted in no modulation of the channel by the gate, and C-V measurement further verified this finding. MOCVD Al2O3 allowed the best possible gate modulation indicating substantially lower interface states. SIT (static induction transistor) looks similar to a MOSVFET where a Schottky structure is used as the gate instead of an oxide layer. In a way, an SIT acts as a predecessor of a MOSVFET and needs no oxide or p-type GaN for its functioning. GaN SIT using the self-aligned technology was accomplished using a SiO2 lift-off step in buffered oxide etching (BOE). The low power dry etching combined with wet etching was proved to be effective in reducing the etch damages, decreasing the gate leakage, and enhancing the gate control over the channel. Finally, a photoresist planarization-assisted method was developed which achieved a MOSVFET with more than 8 kA/cm2 of output current, 0.57 m[omega]·cm2 of on-state resistance, and higher-quality oxide.

Nitride Semiconductor Technology

Author : Fabrizio Roccaforte
Publisher : John Wiley & Sons
ISBN 13 : 3527825274
Total Pages : 464 pages
Book Rating : 4.5/5 (278 download)

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Book Synopsis Nitride Semiconductor Technology by : Fabrizio Roccaforte

Download or read book Nitride Semiconductor Technology written by Fabrizio Roccaforte and published by John Wiley & Sons. This book was released on 2020-07-30 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.

Novel Gallium Nitride Transistor Architectures for Wireless Communications and Power Electronics

Author : Woojin Choi
Publisher :
ISBN 13 :
Total Pages : 121 pages
Book Rating : 4.:/5 (119 download)

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Book Synopsis Novel Gallium Nitride Transistor Architectures for Wireless Communications and Power Electronics by : Woojin Choi

Download or read book Novel Gallium Nitride Transistor Architectures for Wireless Communications and Power Electronics written by Woojin Choi and published by . This book was released on 2020 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transistors are the backbone of any electronic system. The Si complementary metal-oxide-semiconductor (CMOS) technology with extremely scaled process has governed the electronic world in the last few decades, but many other materials with novel design architectures are emerging to alternate it in some applications. Gallium nitride (GaN) is one of them and coming into view recently for high power and high frequency applications due to the surge of electric power usage and data transmission rate. This dissertation provides a comprehensive study of two types of GaN transistors, lateral and vertical, for power electronics and wireless communications. The first half of the dissertation investigates vertical GaN transistors for high power switches. The epitaxial layers grown by a novel selective area growth (SAG) method on a Si substrate were utilized to pursue demonstration of cheap and high-performance GaN devices, and commercialized GaN wafers were used to identify and resolve existing problems, and to improve the key device metrics. An evolution of the vertical GaN transistor by optimizing the device design and the fabrication process is shown and discussed in detail with experiments and TCAD simulations. In the second half of this dissertation, we propose a novel approach to address the intrinsic linearity of GaN transistors for radio frequency (RF) amplifiers. A new device design methodology was presented by simple lithographic modifications that can create a flat transconductance (gm) profile for AlGaN/GaN Fin field-effect transistors (FinFETs). Then, it is discussed how this flat gm impacts on the intermodulation distortion characteristics at microwave as well as millimeter wave frequencies with a record linearity figure-of-merit at 5 GHz. Finally, with a measured noise performance of the realized device, we present a record dynamic range figure-of-merit at 30 GHz for GaN transistors and much higher linearity performance than any existing semiconductor technologies, exhibiting a great potential for mm-wave low noise amplifiers (LNAs).

Wide Bandgap Semiconductor Power Devices

Author : B. Jayant Baliga
Publisher : Woodhead Publishing
ISBN 13 : 0081023073
Total Pages : 420 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Wide Bandgap Semiconductor Power Devices by : B. Jayant Baliga

Download or read book Wide Bandgap Semiconductor Power Devices written by B. Jayant Baliga and published by Woodhead Publishing. This book was released on 2018-10-17 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact