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Author : G. E. Stillman
Publisher : CRC Press
ISBN 13 :
Total Pages : 684 pages
Book Rating : 4.:/5 (45 download)
Download or read book Gallium Arsenide and Related Compounds 1982, written by G. E. Stillman and published by CRC Press. This book was released on 1983-04 with total page 684 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 876 pages
Book Rating : 4.:/5 (42 download)
Download or read book Gallium Arsenide and Related Compounds written by and published by . This book was released on 1993 with total page 876 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gerald B. Stringfellow
Publisher : CRC Press
ISBN 13 : 100011225X
Total Pages : 680 pages
Book Rating : 4.0/5 (1 download)
Download or read book Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA written by Gerald B. Stringfellow and published by CRC Press. This book was released on 2020-11-25 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Author : Ikegami
Publisher : CRC Press
ISBN 13 : 9780750302500
Total Pages : 1002 pages
Book Rating : 4.3/5 (25 download)
Download or read book Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan written by Ikegami and published by CRC Press. This book was released on 1993-01-01 with total page 1002 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.
Author : Günter Weimann
Publisher : CRC Press
ISBN 13 : 9780750302951
Total Pages : 880 pages
Book Rating : 4.3/5 (29 download)
Download or read book Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany written by Günter Weimann and published by CRC Press. This book was released on 1994-01-01 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
Author : V. G. Keramidas
Publisher :
ISBN 13 :
Total Pages : 314 pages
Book Rating : 4.:/5 (44 download)
Download or read book Proceedings of the Symposium on III-V Opto-Electronics Epitaxy and Device Related Processes written by V. G. Keramidas and published by . This book was released on 1983 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : McD. Robinson
Publisher :
ISBN 13 :
Total Pages : 828 pages
Book Rating : 4.E/5 ( download)
Download or read book Proceedings of the Ninth International Conference on Chemical Vapor Deposition, 1984 written by McD. Robinson and published by . This book was released on 1984 with total page 828 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : R.J. Malik
Publisher : Elsevier
ISBN 13 : 0444596356
Total Pages : 740 pages
Book Rating : 4.4/5 (445 download)
Download or read book III-V Semiconductor Materials and Devices written by R.J. Malik and published by Elsevier. This book was released on 2012-12-02 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.
Author : Norman G. Einspruch
Publisher : Academic Press
ISBN 13 : 1483217752
Total Pages : 544 pages
Book Rating : 4.4/5 (832 download)
Download or read book Plasma Processing for VLSI written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics: Microstructure Science, Volume 8: Plasma Processing for VLSI (Very Large Scale Integration) discusses the utilization of plasmas for general semiconductor processing. It also includes expositions on advanced deposition of materials for metallization, lithographic methods that use plasmas as exposure sources and for multiple resist patterning, and device structures made possible by anisotropic etching. This volume is divided into four sections. It begins with the history of plasma processing, a discussion of some of the early developments and trends for VLSI. The second section, Deposition, discusses deposition techniques for VLSI such as sputtering metals for metallization and contacts, plasma-enhanced chemical vapor deposition of metals and suicides, and plasma enhanced chemical vapor deposition of dielectrics. The part on Lithography presents the high-resolution trilayer resist system, pulsed x-ray sources for submicrometer x-ray lithography, and high-intensity deep-UV sources. The last part, Etching, provides methods in etching, like ion-beam etching using reactive gases, low-pressure reactive ion etching, and the uses of inert-gas ion milling. The theory and mechanisms of plasma etching are described and a number of new device structures made possible by anisotropic etching are enumerated as well. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
Author : Norman G. Einspruch
Publisher : Academic Press
ISBN 13 : 1483217779
Total Pages : 472 pages
Book Rating : 4.4/5 (832 download)
Download or read book GaAs Microelectronics written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
Author : Niloy K Dutta
Publisher : World Scientific
ISBN 13 : 9811290180
Total Pages : 325 pages
Book Rating : 4.8/5 (112 download)
Download or read book Mode-locked Lasers: Introduction To Ultrafast Semiconductor And Fiber Lasers written by Niloy K Dutta and published by World Scientific. This book was released on 2024-05-21 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: This invaluable book provides a comprehensive treatment of the design and application of Mode Locked Lasers and Short Pulse Generation. With the advances in semiconductor laser and fiber laser technologies in the 1980s to now, these devices have been made compact, refined, and developed for a wide range of applications including further scientific studies.Semiconductor mode-locked lasers are stable pulse sources and can be made over a range of wavelengths where laser operation is feasible. Rare earth doped fiber lasers or planar waveguides extend this range further and can provide compact pulsed sources. The principles of operation, analysis, design and fabrication of these sources are described. Recent results on high repetition rate and high-power pulse generation from these compacts sources are also described, together with current and future directions of application of these types of laser sources.Mode-Locked Lasers: Introduction to Ultrafast Semiconductor and Fiber Lasers is self-contained and unified in presentation. It can be used as an advanced text by graduate students and by practicing engineers. It is also suitable for non-experts who wish to have an overview of mode-locked lasers and pulse generation. The explanations in the book are detailed enough to capture the interest of the curious reader and complete enough to provide the necessary background to explore the subject further.
Author : J.D. Chadi
Publisher : Springer Science & Business Media
ISBN 13 : 1461576822
Total Pages : 1580 pages
Book Rating : 4.4/5 (615 download)
Download or read book Proceedings of the 17th International Conference on the Physics of Semiconductors written by J.D. Chadi and published by Springer Science & Business Media. This book was released on 2013-12-01 with total page 1580 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.
Author : L.L. Chang
Publisher : Springer Science & Business Media
ISBN 13 : 940095073X
Total Pages : 718 pages
Book Rating : 4.4/5 (9 download)
Download or read book Molecular Beam Epitaxy and Heterostructures written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.
Author :
Publisher : Academic Press
ISBN 13 : 0080577261
Total Pages : 407 pages
Book Rating : 4.0/5 (85 download)
Download or read book Advances in Electronics and Electron Physics written by and published by Academic Press. This book was released on 1983-11-01 with total page 407 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Electronics and Electron Physics
Author : C.R.M. Grovenor
Publisher : Routledge
ISBN 13 : 1351431544
Total Pages : 557 pages
Book Rating : 4.3/5 (514 download)
Download or read book Microelectronic Materials written by C.R.M. Grovenor and published by Routledge. This book was released on 2017-10-05 with total page 557 pages. Available in PDF, EPUB and Kindle. Book excerpt: This practical book shows how an understanding of structure, thermodynamics, and electrical properties can explain some of the choices of materials used in microelectronics, and can assist in the design of new materials for specific applications. It emphasizes the importance of the phase chemistry of semiconductor and metal systems for ensuring the long-term stability of new devices. The book discusses single-crystal and polycrystalline silicon, aluminium- and gold-based metallisation schemes, packaging semiconductor devices, failure analysis, and the suitability of various materials for optoelectronic devices and solar cells. It has been designed for senior undergraduates, graduates, and researchers in physics, electronic engineering, and materials science.
Author : A. Benninghoven
Publisher : Springer Science & Business Media
ISBN 13 : 3642881521
Total Pages : 455 pages
Book Rating : 4.6/5 (428 download)
Download or read book Secondary Ion Mass Spectrometry SIMS III written by A. Benninghoven and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 455 pages. Available in PDF, EPUB and Kindle. Book excerpt: Following the biannual meetings in MUnster (1977) and Stanford (1979) the Third International Conference on Secondary Ion Mass Spectroscopy was held in Budapest from August 31 to September 5, 1981. The Conference was attended by about 250 participants. The success of the 1981 Conference in Budapest was especially due to the excellent preparation and organization by the Local Organizing Committee. We would also like to acknowledge the generous hospitality and cooperation of the Hungarian Academy of Sciences. Japan was chosen to be the location for the next conference in 1983. SIMS conferences are devoted to two main issues: improving the application of SIMS in different and especially new fields, and understanding the ion formation process. Needless to say, there is a very strong interaction be tween these two issues. The major reason for the rapid increase in SIMS activities in the last few years is the fact that SIMS is a powerful tool for bulk, thin-film, and surface analysis. Today it is extensively and successfully applied in such different fields as depth profiling and imaging of semiconductor devices, in isotope analysis of minerals, in imaging biological tissues, in the study of catalysts and catalytic reactions, in oxide-layer analysis on metals in drug detection, and in the analysis of body fluids.
Author : Herbert Kroemer
Publisher : World Scientific
ISBN 13 : 9814474681
Total Pages : 385 pages
Book Rating : 4.8/5 (144 download)
Download or read book Selected Works Of Professor Herbert Kroemer written by Herbert Kroemer and published by World Scientific. This book was released on 2008-05-09 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Information technology has changed our society radically. Just as the integrated circuits have been the prime mover for electronics, high-speed transistors and semiconductor lasers based on heterostructures are now playing the same role in modern telecommunications. Professor Kroemer's conceptual work on heterostructures began in the early 1950s as he was looking for a way to improve transistor speed and performance. In the 1960s, he applied the same principles to the development of lasers and light-emitting diodes, showing that they could achieve continuous operation at room temperature — something thought impossible at that time. His deep fundamental scientific work has had a profound effect on technology and society, transforming and improving our lives.This reprint collection brings together Professor Kroemer's most important papers, presenting a comprehensive perspective of the field. It covers topics ranging from substrate materials, electronic properties, process technology, and devices, to circuits and applications. This reprint collection will help the reader identify the key stages in the development of heterostructure devices and lasers from early research through to its integration in current manufacturing. Devoted to R&D engineers and scientists who are actively involved in extending the nano- and microelectronics roadmap mainly via heterostructure engineering, this volume may also serve as a reference for postgraduate and research students.
