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Author : Thomas P. Pearsall
Publisher :
ISBN 13 : 9780783758756
Total Pages : 480 pages
Book Rating : 4.7/5 (587 download)
Download or read book GaInAsP Alloy Semiconductors written by Thomas P. Pearsall and published by . This book was released on with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Pearsall TP Ed
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (985 download)
Download or read book GaInAsP Alloy Semiconductors written by Pearsall TP Ed and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : T. P. Pearsall
Publisher :
ISBN 13 :
Total Pages : 488 pages
Book Rating : 4.3/5 (91 download)
Download or read book Gainasp Alloy Semiconductors written by T. P. Pearsall and published by . This book was released on 1982-11-19 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides an in-depth introduction to the growth, characterization, and device technology of the GaInAsP conductor, the cornerstone of the optical fibre telecommunications industry. Includes a comprehensive treatment of all known crystal growth methods. Relates particular physical properties of materials systems to the performance of semiconductor devices.
Author : An-Ben Chen
Publisher : Springer Science & Business Media
ISBN 13 : 1461303176
Total Pages : 358 pages
Book Rating : 4.4/5 (613 download)
Download or read book Semiconductor Alloys written by An-Ben Chen and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the first comprehensive treatment of these technologically important materials, the authors provide theories linking the properties of semiconductor alloys to their constituent compounds. Topics include crystal structures, bonding, elastic properties, phase diagrams, band structures, transport, ab-initio theories, and semi-empirical theories. Each chapter includes extensive tables and figures as well as problem sets.
Author : Sadao Adachi
Publisher : John Wiley & Sons
ISBN 13 : 9780470744390
Total Pages : 422 pages
Book Rating : 4.7/5 (443 download)
Download or read book Properties of Semiconductor Alloys written by Sadao Adachi and published by John Wiley & Sons. This book was released on 2009-03-12 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III−V and II−VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III−N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II−VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys.
Author : V. Swaminathan
Publisher :
ISBN 13 :
Total Pages : 630 pages
Book Rating : 4.3/5 (91 download)
Download or read book Materials Aspects of GaAs and InP Based Structures written by V. Swaminathan and published by . This book was released on 1991 with total page 630 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses materials aspects of GaAs, InP and related alloys used in the fabricating of photonic and electronic devices. Coverage includes state-of-the-art materials growth and characterization; and physics and chemistry of point defects and dislocations, defects and device reliability.
Author : James D. Oliver
Publisher :
ISBN 13 :
Total Pages : 372 pages
Book Rating : 4.E/5 ( download)
Download or read book Liquid Phase Epitaxial Growth and Characterization of High Purity Gallium-indium-arsenide-phosphide Semiconductor Alloys Lattice Matched to Indium Phosphide Substrates written by James D. Oliver and published by . This book was released on 1980 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Padmanabhan Parayanthal
Publisher :
ISBN 13 :
Total Pages : 334 pages
Book Rating : 4.:/5 (796 download)
Download or read book Spectroscopic Study of Alloy Semiconductors Ga1−xAlxAs/GaAs and (Ga1−xAlx)0.47In53As/InP written by Padmanabhan Parayanthal and published by . This book was released on 1984 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Arthur R. Calawa
Publisher :
ISBN 13 :
Total Pages : 53 pages
Book Rating : 4.:/5 (227 download)
Download or read book GaInAs and GaInAsP MBE Crystal Growth written by Arthur R. Calawa and published by . This book was released on 1978 with total page 53 pages. Available in PDF, EPUB and Kindle. Book excerpt: The use of epitaxial layers and of heteroepitaxial layers of compound semiconductors in recent years has had a significant impact on the development of new and useful semiconductor devices. Interest in the quaternary alloy Ga1-xInxAs1-yPy is primarily based on the applications of this material to optical devices such as light emitting diodes (LED), photo-emissive cathodes and heterojunction lasers. The principal advantages of this material are that lattice-matched layers can be epitaxially grown on InP over a wide composition range, which permits the light emission of lasers and LEDs to be extended to longer wavelengths where optical fiber transmission is optimal. (Current state-of-the-art optical fibers have their best characteristics--minimum loss and minimum dispersion). It is also of importance in electroopitcal device applications that GaInAsP is lattice-matched to a binary compound substrate (InP), which is transparent at the operating wavelength of the devices. The potential importance of these materials in microwave devices such as the metal-epitaxial semiconductor field-effect transistor (MESFET) and transferred electron devices is demonstrated in a comparison of the electron velocity-field characteristics of these alloys and of GaAs.
Author : Robert K. Willardson
Publisher :
ISBN 13 :
Total Pages : 584 pages
Book Rating : 4.:/5 ( download)
Download or read book Compound Semiconductors written by Robert K. Willardson and published by . This book was released on 1962 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Pantelija M. Nikolic
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (125 download)
Download or read book Properties of Alloy Semiconductors written by Pantelija M. Nikolic and published by . This book was released on 1964 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Govind P. Agrawal
Publisher : Springer Science & Business Media
ISBN 13 : 1461304814
Total Pages : 630 pages
Book Rating : 4.4/5 (613 download)
Download or read book Semiconductor Lasers written by Govind P. Agrawal and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 630 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ~m. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8-0. 9 ~m, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage oflow losses in silica fibers occurring around 1. 3 and 1. 55 ~m, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths.
Author : Bobby Lee Pitts
Publisher :
ISBN 13 :
Total Pages : 324 pages
Book Rating : 4.E/5 ( download)
Download or read book Growth and Characterization of GaInAsP on GaAs Using Flow Modulation Epitaxy written by Bobby Lee Pitts and published by . This book was released on 1994 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Harold M. Manasevit
Publisher :
ISBN 13 :
Total Pages : 37 pages
Book Rating : 4.:/5 (227 download)
Download or read book Study of the Preparation of III-V Alloy Semiconductors with Controlled Band Gaps written by Harold M. Manasevit and published by . This book was released on 1971 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt: The feasibility of using a metalorganic-hydride process for the formation of epitaxial layers of Ga(1-x)InxAs alloy semiconductors on n-type GaAs and InAs single-crystal substrates has been investigated. Conditions have been established for the preparation of single-crystal layers with bandgap energies between 0.7 and 0.8 eV. The investigation has been based on a chemical vapor deposition process employing metalorganics such as trimethylgallium and triethylindium and gaseous hydrides such as arsine for growth of the alloys on the above substrates and on sapphire (Al2O3), the latter to facilitate evaluation of the alloy films. The feasibility of growth of alloys in a range of compositions has been clearly demonstrated. Carrier concentrations the order of 10 to the 16th power cu cm or below have been obtained, and room temperature mobilities as high as nearly 10,000 sq cm/V-sec on (0001) Al2O3 and over 4000 sq cm/v-sec on (111) GaAs ('A' face) have been achieved. Experimentally determined optical bandgap energies and alloy compositions for the Ga1-xInxAs films indicate a smooth continuous variation of bandgap with the mole fraction of either cation. A bandgap energy of 0.7 eV results for a film containing 0.40 - 0.45 mole fraction of Ga. (Author).
Author : Charles Michael Gillet
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (125 download)
Download or read book Electrical Properties of Alloy Semiconductors with Zinc Blende Structure written by Charles Michael Gillet and published by . This book was released on 1960 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Otfried Madelung
Publisher : Springer Science & Business Media
ISBN 13 : 3642456812
Total Pages : 170 pages
Book Rating : 4.6/5 (424 download)
Download or read book Semiconductors written by Otfried Madelung and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt: The frequent use of well known critical data handbooks like Beilstein, Gmelin and Landolt Bornstein is impeded by the fact that merely larger libraries - often far away from the scientist's working place - can afford such precious collections. To satisfy an urgent need of many scientists for having at their working place a comprehensive, high quality, but cheap collection of at least the basic data oftheirfield of interest the series "Data in Science and Technology"is started now. This first volume presents the most important data on two groups of semiconductors, the elements of the IVth group of the periodic system and the III-V compounds. All data were compiled from information on about 2500 pages in various volumes of the New Series of Landolt-Bornstein. For each critically chosen data set and each figure the original literature is cited. In addition, tables of content refer to the handbooks the data were drawn from. Thus the presentation of data in this volume is of the same high quality standard as in the original evaluated data collections. We hope to meet the needs of the physical community with the volumes of the series "Data in Science and Technology", forming bridges between the laboratory and additional information sources in the libraries.
Author : C.R.M. Grovenor
Publisher : Routledge
ISBN 13 : 1351431536
Total Pages : 560 pages
Book Rating : 4.3/5 (514 download)
Download or read book Microelectronic Materials written by C.R.M. Grovenor and published by Routledge. This book was released on 2017-10-05 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: This practical book shows how an understanding of structure, thermodynamics, and electrical properties can explain some of the choices of materials used in microelectronics, and can assist in the design of new materials for specific applications. It emphasizes the importance of the phase chemistry of semiconductor and metal systems for ensuring the long-term stability of new devices. The book discusses single-crystal and polycrystalline silicon, aluminium- and gold-based metallisation schemes, packaging semiconductor devices, failure analysis, and the suitability of various materials for optoelectronic devices and solar cells. It has been designed for senior undergraduates, graduates, and researchers in physics, electronic engineering, and materials science.
