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Gaas Based Components For Photonic Integrated Circuits
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Book Synopsis GaAs-based components for photonic integrated circuits by : Bassem Arar
Download or read book GaAs-based components for photonic integrated circuits written by Bassem Arar and published by Cuvillier Verlag. This book was released on 2019-03-06 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt: Successful miniaturization of complex electro-optic devices is a prerequisite for bringing quantum optical sensors to work outside optical labs in a real-world application scenario. Monolithic, i.e. chip-scale integration, holds the promise of achieving the highest level of compactness, robustness, and reliability at the lowest production cost possible. This work focuses on modelling, simulation, design, manufacturing, and testing of functional building blocks for photonic integrated circuits. GaAs-based waveguides, NxM multi-mode interference couplers, and electro-optic phase modulators were developed for applications of rubidium precision spectroscopy at 780 nm for the first time. As an example for photonic integrated circuits a monolithic amplitude modulator based on a Mach-Zehnder-interferometer was demonstrated. Further, GaAs-based phase modulators were developed for applications at 1064 nm. For operation at 780 nm single-mode waveguides with an exceptionally small loss of 1.2 dB/cm and phase modulators with an efficiency as large as 16 deg/(Vxmm) were demonstrated. This work additionally advances the experimental methods available to investigate the electro-optic properties of phase modulators: a novel method based on the I&Q-demodulation of time domain modulation signals derived with a heterodyne interferometer does not only provide access to the phase but also to the (residual) amplitude modulation and allows to separate linear from quadratic phase modulation effects. This provides novel experimental insights into the physical effects governing phase modulation. In fact, it is shown that the current understanding according to which carrier-density related effects contribute solely to the linearly of phase modulation is questionable.
Book Synopsis GaAs Photonic Integrated Circuit (PIC) Development for High Performance Communications by :
Download or read book GaAs Photonic Integrated Circuit (PIC) Development for High Performance Communications written by and published by . This book was released on 1998 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: Sandia has established a foundational technology in photonic integrated circuits (PICs) based on the (Al, Ga, In)As material system for optical communication, radar control and testing, and network switching applications at the important 1.3[mu]m/1.55[mu]m wavelengths. We investigated the optical, electrooptical, and microwave performance characteristics of the fundamental building-block PIC elements designed to be as simple and process-tolerant as possible, with particular emphasis placed on reducing optical insertion loss. Relatively conventional device array and circuit designs were built using these PIC elements: (1) to establish a baseline performance standard; (2) to assess the impact of epitaxial growth accuracy and uniformity, and of fabrication uniformity and yield; (3) to validate our theoretical and numerical models; and (4) to resolve the optical and microwave packaging issues associated with building fully packaged prototypes. Novel and more complex PIC designs and fabrication processes, viewed as higher payoff but higher risk, were explored in a parallel effort with the intention of meshing those advances into our baseline higher-yield capability as they mature. The application focus targeted the design and fabrication of packaged solitary modulators meeting the requirements of future wideband and high-speed analog and digital data links. Successfully prototyped devices are expected to feed into more complex PICs solving specific problems in high-performance communications, such as optical beamforming networks for phased array antennas.
Book Synopsis GaAs High-Speed Devices by : C. Y. Chang
Download or read book GaAs High-Speed Devices written by C. Y. Chang and published by John Wiley & Sons. This book was released on 1994-10-28 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
Book Synopsis High-performance GaAs/AlGaAs Optical Phase Modulators for Microwave/photonic Integrated Circuits by :
Download or read book High-performance GaAs/AlGaAs Optical Phase Modulators for Microwave/photonic Integrated Circuits written by and published by . This book was released on 1993 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-speed high-performance optical phase modulators are being developed for use in a coherent Photonic Integrated Circuit (PIC) technology. These phase modulators are the critical component of a PIC program at Sandia National Laboratories targeted for microwave/millimeter-wave signal processing and control including phased-array antenna control. The primary design goals for these modulators are amenability for integration into PICs, high f̀̀igure of merit ̀̀(FOM -- phase shift per unit length-voltage), and large bandwidths allowing for operation at millimeter wave frequencies. Depletion-edge-translation optical phase modulators (GaAs/AlGaAs based) have been selected as the device technology of choice due to their high FOM (>60°/V·mm @ 1.3?m). These modulators unfortunately suffer from a large terminal capacitance which greatly limits speed. To overcome this problem, a distributed electrode design based on the use of slow-wave coplanar strips has been developed. Device design and measurements are presented in this paper.
Book Synopsis GaAs Microelectronics by : Norman G. Einspruch
Download or read book GaAs Microelectronics written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
Book Synopsis GaAs Devices and Circuits by : Michael S. Shur
Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
Book Synopsis Diode Lasers and Photonic Integrated Circuits by : Larry A. Coldren
Download or read book Diode Lasers and Photonic Integrated Circuits written by Larry A. Coldren and published by John Wiley & Sons. This book was released on 2012-03-20 with total page 752 pages. Available in PDF, EPUB and Kindle. Book excerpt: Diode Lasers and Photonic Integrated Circuits, Second Edition provides a comprehensive treatment of optical communication technology, its principles and theory, treating students as well as experienced engineers to an in-depth exploration of this field. Diode lasers are still of significant importance in the areas of optical communication, storage, and sensing. Using the the same well received theoretical foundations of the first edition, the Second Edition now introduces timely updates in the technology and in focus of the book. After 15 years of development in the field, this book will offer brand new and updated material on GaN-based and quantum-dot lasers, photonic IC technology, detectors, modulators and SOAs, DVDs and storage, eye diagrams and BER concepts, and DFB lasers. Appendices will also be expanded to include quantum-dot issues and more on the relation between spontaneous emission and gain.
Book Synopsis GaAs Technology and Its Impact on Circuits and Systems by : David Haigh
Download or read book GaAs Technology and Its Impact on Circuits and Systems written by David Haigh and published by Institution of Electrical Engineers. This book was released on 1989 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book captures the essence of developments of Gallium Arsenide technology from the research laboratory to the marketplace along with the dramatic increases in complexity from early single devices to ICs of MSI complexity for both analog and digital applications.
Download or read book High-performance GaAs written by and published by . This book was released on 1994 with total page 2 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of this effort is to build and package photonic integrated circuits (PICs). This infers that compact device design is very important, with all building blocks of the circuit aimed toward integration, low voltage operation, and manufacturability. With such a device, it is important that optical packaging by considered in the initial design. To this end, an advanced photonic packaging concept was designed. This concept employs vertical coupling of light both in and out of the package. This package concept is aimed at hermeticity, with no fiber penetrations through the walls of the package. This paper will describe the building blocks of this package, including output gratings, binary optics, and an automatic fiber capture device, called CLASP.
Book Synopsis Gallium Arsenide Digital Circuits by : Omar Wing
Download or read book Gallium Arsenide Digital Circuits written by Omar Wing and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat ing speed will further increase and the cost of production will reach a point where large scale application of GaAs circuits will be economical in these and other systems where speed is paramount. This book is written for students and engineers who wish to enter into this new field of electronics for the first time and who wish to embark on a serious study of the subject of GaAs circuit design. No prior knowledge of GaAs technology is assumed though some previous experience with MOS circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi mate circuit performance are also derived. Computer simulation is used throughout the book to show the expected performance and to study the effects of parameter variations.
Book Synopsis Strained Ge and GeSn Band Engineering for Si Photonic Integrated Circuits by : Yijie Huo
Download or read book Strained Ge and GeSn Band Engineering for Si Photonic Integrated Circuits written by Yijie Huo and published by Stanford University. This book was released on 2010 with total page 139 pages. Available in PDF, EPUB and Kindle. Book excerpt: The on-chip interconnect bandwidth limitation is becoming an increasingly critical challenge for integrated circuits (ICs) as device scaling continues to push the speed and density of ICs. Silicon photonics has the ability to solve this emerging problem due to its high speed, high bandwidth, low power consumption, and ability to be monolithically integrated on silicon. Most of the key devices for Si photonic ICs have already been demonstrated. However, a practical CMOS compatible coherent light source is still a major challenge. Germanium (Ge) has already been demonstrated to be a promising material for optoelectronic devices, such as photo-detectors and modulators. However, Ge is an indirect band gap semiconductor, which makes Ge-based light sources very inefficient and limits their practical use. Fortunately, the direct [uppercase Gamma] valley of the Ge conduction band is only 0.14 eV higher than the indirect L valley, suggesting that with band-structure engineering, Ge has the potential to become a direct band gap material and an efficient light emitter. In this dissertation, we first discuss our work on highly biaxial tensile strained Ge grown by molecular beam epitaxy (MBE). Relaxed step-graded InGaAs buffer layers, which are prepared with low temperature growth and high temperature annealing, are used to provide a larger lattice constant substrate to produce tensile strain in Ge epitaxial layers. Up to 2.3% in-plane biaxial tensile strained thin Ge epitaxial layers were achieved with smooth surfaces and low threading dislocation density. A strong increase of photoluminescence with highly tensile strained Ge layers at low temperature suggests that a direct band gap semiconductor has been achieved. This dissertation also presents our work on more than 9% Sn incorporation in epitaxial GeSn alloys using a low temperature MBE growth method. This amount of Sn is 10 times greater than the solid-solubility of Sn in crystalline Ge. Material characterization shows good crystalline quality without Sn precipitation or phase segregation. With increasing Sn percentage, direct band gap narrowing is observed by optical transmission measurements. The studies described in this dissertation will help enable efficient germanium based CMOS compatible coherent light sources. Other possible applications of this work are also discussed in the concluding chapter.
Book Synopsis Topics on GaAs Integrated Circuit by : Yu-Hwa Lo
Download or read book Topics on GaAs Integrated Circuit written by Yu-Hwa Lo and published by . This book was released on 1987 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Quasi-optical Circuit Applications of GaAs Devices by :
Download or read book Quasi-optical Circuit Applications of GaAs Devices written by and published by . This book was released on 1904 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper will summarize some of the recent developments in the applications of GaAs based devices in planar quasi-optical integrated circuits. After a short review of quasi-optical mixers, more recent efforts on increasing the catalog of components made of quasi-optical planar technology are presented.
Book Synopsis GaAs Integrated Circuits by : Joseph Mun
Download or read book GaAs Integrated Circuits written by Joseph Mun and published by . This book was released on 1988 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced GaAs MMIC Technology by : Fazal Ali
Download or read book Advanced GaAs MMIC Technology written by Fazal Ali and published by . This book was released on 1989 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany by : Günter Weimann
Download or read book Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany written by Günter Weimann and published by CRC Press. This book was released on 1994-01-01 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
Download or read book Thin Films written by Fatma Sarf and published by BoD – Books on Demand. This book was released on 2024-01-17 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the growth of nanomaterials as thin films. It covers the recent development of thin films using different techniques, such as electrodeposition. It also discusses the widespread use of electrochemical and magnetic applications. This book brings together multidisciplinary chapters written by leading specialists in the field.
