Fundamentals of Bias Temperature Instability in MOS Transistors

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Publisher : Springer
ISBN 13 : 8132225082
Total Pages : 282 pages
Book Rating : 4.1/5 (322 download)

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Book Synopsis Fundamentals of Bias Temperature Instability in MOS Transistors by : Souvik Mahapatra

Download or read book Fundamentals of Bias Temperature Instability in MOS Transistors written by Souvik Mahapatra and published by Springer. This book was released on 2015-08-05 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.

Implications of Negative Bias Temperature Instability in Power MOS Transistors

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Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (115 download)

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Book Synopsis Implications of Negative Bias Temperature Instability in Power MOS Transistors by : Danijel Danković

Download or read book Implications of Negative Bias Temperature Instability in Power MOS Transistors written by Danijel Danković and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Implications of Negative Bias Temperature Instability in Power MOS Transistors.

Bias Temperature Instability for Devices and Circuits

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Publisher : Springer Science & Business Media
ISBN 13 : 1461479096
Total Pages : 805 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Bias Temperature Instability for Devices and Circuits by : Tibor Grasser

Download or read book Bias Temperature Instability for Devices and Circuits written by Tibor Grasser and published by Springer Science & Business Media. This book was released on 2013-10-22 with total page 805 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.

Recent Advances in PMOS Negative Bias Temperature Instability

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Publisher : Springer Nature
ISBN 13 : 9811661200
Total Pages : 322 pages
Book Rating : 4.8/5 (116 download)

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Book Synopsis Recent Advances in PMOS Negative Bias Temperature Instability by : Souvik Mahapatra

Download or read book Recent Advances in PMOS Negative Bias Temperature Instability written by Souvik Mahapatra and published by Springer Nature. This book was released on 2021-11-25 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and AC stress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.

Nanometer CMOS ICs

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Publisher : Springer
ISBN 13 : 3319475975
Total Pages : 639 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Nanometer CMOS ICs by : Harry J.M. Veendrick

Download or read book Nanometer CMOS ICs written by Harry J.M. Veendrick and published by Springer. This book was released on 2017-04-28 with total page 639 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

Circadian Rhythms for Future Resilient Electronic Systems

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Publisher : Springer
ISBN 13 : 3030200515
Total Pages : 208 pages
Book Rating : 4.0/5 (32 download)

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Book Synopsis Circadian Rhythms for Future Resilient Electronic Systems by : Xinfei Guo

Download or read book Circadian Rhythms for Future Resilient Electronic Systems written by Xinfei Guo and published by Springer. This book was released on 2019-06-12 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes methods to address wearout/aging degradations in electronic chips and systems, caused by several physical mechanisms at the device level. The authors introduce a novel technique called accelerated active self-healing, which fixes wearout issues by enabling accelerated recovery. Coverage includes recovery theory, experimental results, implementations and applications, across multiple nodes ranging from planar, FD-SOI to FinFET, based on both foundry provided models and predictive models. Presents novel techniques, tested with experiments on real hardware; Discusses circuit and system level wearout recovery implementations, many of these designs are portable and friendly to the standard design flow; Provides circuit-architecture-system infrastructures that enable the accelerated self-healing for future resilient systems; Discusses wearout issues at both transistor and interconnect level, providing solutions that apply to both; Includes coverage of resilient aspects of emerging applications such as IoT.

Negative-bias-temperature Instability (NBTI) in Mos Devices

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Author :
Publisher :
ISBN 13 :
Total Pages : 198 pages
Book Rating : 4.:/5 (633 download)

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Book Synopsis Negative-bias-temperature Instability (NBTI) in Mos Devices by :

Download or read book Negative-bias-temperature Instability (NBTI) in Mos Devices written by and published by . This book was released on 2005 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Modeling and Simulation of Negative Bias Temperature Instability

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Publisher :
ISBN 13 : 9783836459976
Total Pages : 126 pages
Book Rating : 4.4/5 (599 download)

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Book Synopsis Modeling and Simulation of Negative Bias Temperature Instability by : Robert Entner

Download or read book Modeling and Simulation of Negative Bias Temperature Instability written by Robert Entner and published by . This book was released on 2010 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor process and device simulators are well established tools for the reduction of the development time for semiconductor devices. Nowadays simulation efforts go beyond solving the basic semiconductor device equations. Especially the modeling and simulation of aging processes has tremendously gained in importance. This book gives insight into the topic of semiconductor device simulation and focuses on the modeling of degradation mechanisms. Negative bias temperature instability (NBTI) causes degradation of MOS structures at elevated temperatures and negative gate voltages. An elaborate investigation of literature from the first report to the recent understanding of this degradation mechanism is presented. A comprehensive model is derived, combining research results from different groups and the coupling to the basic semiconductor device equations. The new NBTI model is compared to measurement data and gives excellent results. This book is addressed to researchers in the field of semiconductor process development but also recommended to engineers in IC design to strengthen their understanding for device degradation.

Fundamentals of Silicon Carbide Technology

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Publisher : John Wiley & Sons
ISBN 13 : 1118313526
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)

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Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Fundamentals of III-V Semiconductor MOSFETs

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Publisher : Springer Science & Business Media
ISBN 13 : 1441915478
Total Pages : 451 pages
Book Rating : 4.4/5 (419 download)

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Book Synopsis Fundamentals of III-V Semiconductor MOSFETs by : Serge Oktyabrsky

Download or read book Fundamentals of III-V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Junctionless Field-Effect Transistors

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Publisher : John Wiley & Sons
ISBN 13 : 1119523516
Total Pages : 496 pages
Book Rating : 4.1/5 (195 download)

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Book Synopsis Junctionless Field-Effect Transistors by : Shubham Sahay

Download or read book Junctionless Field-Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-01-25 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.

Fundamentals of Modern VLSI Devices

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Publisher : Cambridge University Press
ISBN 13 : 1108848052
Total Pages : 628 pages
Book Rating : 4.1/5 (88 download)

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Book Synopsis Fundamentals of Modern VLSI Devices by : Yuan Taur

Download or read book Fundamentals of Modern VLSI Devices written by Yuan Taur and published by Cambridge University Press. This book was released on 2021-12-02 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.

Semiconductors

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Publisher : CRC Press
ISBN 13 : 1439817154
Total Pages : 249 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis Semiconductors by : Artur Balasinski

Download or read book Semiconductors written by Artur Balasinski and published by CRC Press. This book was released on 2018-09-03 with total page 249 pages. Available in PDF, EPUB and Kindle. Book excerpt: Because of the continuous evolution of integrated circuit manufacturing (ICM) and design for manufacturability (DfM), most books on the subject are obsolete before they even go to press. That’s why the field requires a reference that takes the focus off of numbers and concentrates more on larger economic concepts than on technical details. Semiconductors: Integrated Circuit Design for Manufacturability covers the gradual evolution of integrated circuit design (ICD) as a basis to propose strategies for improving return-on-investment (ROI) for ICD in manufacturing. Where most books put the spotlight on detailed engineering enhancements and their implications for device functionality, in contrast, this one offers, among other things, crucial, valuable historical background and roadmapping, all illustrated with examples. Presents actual test cases that illustrate product challenges, examine possible solution strategies, and demonstrate how to select and implement the right one This book shows that DfM is a powerful generic engineering concept with potential extending beyond its usual application in automated layout enhancements centered on proximity correction and pattern density. This material explores the concept of ICD for production by breaking down its major steps: product definition, design, layout, and manufacturing. Averting extended discussion of technology, techniques, or specific device dimensions, the author also avoids the clumsy chapter architecture that can hinder other books on this subject. The result is an extremely functional, systematic presentation that simplifies existing approaches to DfM, outlining a clear set of criteria to help readers assess reliability, functionality, and yield. With careful consideration of the economic and technical trade-offs involved in ICD for manufacturing, this reference addresses techniques for physical, electrical, and logical design, keeping coverage fresh and concise for the designers, manufacturers, and researchers defining product architecture and research programs.

Bias Temperature Instability Modelling and Lifetime Prediction on Nano-scale MOSFETs

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Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (17 download)

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Book Synopsis Bias Temperature Instability Modelling and Lifetime Prediction on Nano-scale MOSFETs by : R. Gao

Download or read book Bias Temperature Instability Modelling and Lifetime Prediction on Nano-scale MOSFETs written by R. Gao and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Negative Bias Temperature Instability (NBTI) Experiment

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Publisher :
ISBN 13 :
Total Pages : 57 pages
Book Rating : 4.:/5 (76 download)

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Book Synopsis Negative Bias Temperature Instability (NBTI) Experiment by :

Download or read book Negative Bias Temperature Instability (NBTI) Experiment written by and published by . This book was released on 2006 with total page 57 pages. Available in PDF, EPUB and Kindle. Book excerpt: The phenomenon known as Negative Bias Temperature Instability (NBTI) impacts the operational characteristics of Complementary Metal Oxide Semiconductor (CMOS) devices, and tends to have a stronger effect on p-channel devices. This instability is observed with an applied "on" biasing during normal operation and can be accelerated with thermal stress. A normal applied electrical bias on CMOS transistors can lead to the generation of interface states at the junction of the gate oxide and the transistor channel. The hydrogen that normally passivates the interface states can diffuse away from the interface. As a result, the threshold voltage and transconductance will change. These interface states can be measured to determine the susceptibility to NBTI of the devices. For this purpose, a charge pumping experiment and other On-the-Fly techniques at certain temperatures can provide the interface state density and other valuable data. NBTI can impact current technological fabrication processes, such as those provided to the government from IBM. This paper explains this testing of current submicron transistor technology that will be used for military applications.

On the Atomic Scale Defects Involved in the Negative Bias Temperature Instability in 4H-SiC MOSFETs

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Publisher :
ISBN 13 :
Total Pages : 70 pages
Book Rating : 4.:/5 (857 download)

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Book Synopsis On the Atomic Scale Defects Involved in the Negative Bias Temperature Instability in 4H-SiC MOSFETs by : Jacob J. Follman

Download or read book On the Atomic Scale Defects Involved in the Negative Bias Temperature Instability in 4H-SiC MOSFETs written by Jacob J. Follman and published by . This book was released on 2013 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Negative Bias Temperature Instability Frequency Degradation of CMOS-90 Process

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Publisher :
ISBN 13 :
Total Pages : 108 pages
Book Rating : 4.:/5 (646 download)

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Book Synopsis Negative Bias Temperature Instability Frequency Degradation of CMOS-90 Process by : Hezi Rahamim

Download or read book Negative Bias Temperature Instability Frequency Degradation of CMOS-90 Process written by Hezi Rahamim and published by . This book was released on 2008 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: