Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Full Band Monte Carlo Simulation Of Electron Transport In Silicon Germanium Compound
Download Full Band Monte Carlo Simulation Of Electron Transport In Silicon Germanium Compound full books in PDF, epub, and Kindle. Read online Full Band Monte Carlo Simulation Of Electron Transport In Silicon Germanium Compound ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Full-band Monte Carlo Simulation of Electron Transport in Silicon Germanium Compound by : Surachai Pengmanayol
Download or read book Full-band Monte Carlo Simulation of Electron Transport in Silicon Germanium Compound written by Surachai Pengmanayol and published by . This book was released on 2002 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe by : Fabian M. Bufler
Download or read book Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe written by Fabian M. Bufler and published by Herbert Utz Verlag. This book was released on 1998 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Monte Carlo Device Simulation by : Karl Hess
Download or read book Monte Carlo Device Simulation written by Karl Hess and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.
Book Synopsis Monte Carlo Simulation of Semiconductor Devices by : C. Moglestue
Download or read book Monte Carlo Simulation of Semiconductor Devices written by C. Moglestue and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 343 pages. Available in PDF, EPUB and Kindle. Book excerpt: Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.
Book Synopsis The Monte Carlo Method for Semiconductor Device Simulation by : Carlo Jacoboni
Download or read book The Monte Carlo Method for Semiconductor Device Simulation written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.
Book Synopsis Monte Carlo Transport of Electrons and Photons by : T.M. Jenkins
Download or read book Monte Carlo Transport of Electrons and Photons written by T.M. Jenkins and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 637 pages. Available in PDF, EPUB and Kindle. Book excerpt: For ten days at the end of September, 1987, a group of about 75 scientists from 21 different countries gathered in a restored monastery on a 750 meter high piece of rock jutting out of the Mediterranean Sea to discuss the simulation of the transport of electrons and photons using Monte Carlo techniques. When we first had the idea for this meeting, Ralph Nelson, who had organized a previous course at the "Ettore Majorana" Centre for Scientific Culture, suggested that Erice would be the ideal place for such a meeting. Nahum, Nelson and Rogers became Co-Directors of the Course, with the help of Alessandro Rindi, the Director of the School of Radiation Damage and Protection, and Professor Antonino Zichichi, Director of the "Ettore Majorana" Centre. The course was an outstanding success, both scientifically and socially, and those at the meeting will carry the marks of having attended, both intellectually and on a personal level where many friendships were made. The scientific content of the course was at a very high caliber, both because of the hard work done by all the lecturers in preparing their lectures (e. g. , complete copies of each lecture were available at the beginning of the course) and because of the high quality of the "students", many of whom were accomplished experts in the field. The outstanding facilities of the Centre contributed greatly to the success. This volume contains the formal record of the course lectures.
Book Synopsis Full-band Monte Carlo Simulation of Hot Electrons in Scaled Silicon Devices by : Amanda Watson Duncan
Download or read book Full-band Monte Carlo Simulation of Hot Electrons in Scaled Silicon Devices written by Amanda Watson Duncan and published by . This book was released on 1996 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: A full-band Monte Carlo device simulator has been used to study the effects of device scaling on hot electrons in different types of n-channel MOSFETs and flash memory structures. A MOSFET with a single source/drain implant, an LDD MOSFET, an SOI MOSFET, and a MOSFET built on top of a heavily doped "ground plane" have been simulated. Different scaling techniques have been applied to the devices to see the effects on the electric field, the energy distributions of the electrons, and the drain, substrate, and gate currents. The locations of impact ionization events and injection into the gate oxide are examined. It is shown that simpler models cannot adequately predict hot carrier behavior at the channel lengths studied (below 0.3 $mu$m) and that several strategies that are successful at suppressing the hot carrier population for longer channel lengths are not as useful when 0.1 $mu$m channel lengths are approached. The effect of scaling on the programming of stacked-gate and split-gate flash memory devices was also studied. Predictions of hot carrier behavior in small MOSFETs and flash memory devices are made, and suggestions for device design are given.
Book Synopsis THE RESPONSE HISTORY MONTE CARLO METHOD FOR ELECTRON TRANSPORT (MONTE CARLO METHOD). by : CLINTON TROY BALLINGER
Download or read book THE RESPONSE HISTORY MONTE CARLO METHOD FOR ELECTRON TRANSPORT (MONTE CARLO METHOD). written by CLINTON TROY BALLINGER and published by . This book was released on 1991 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: particularly attractive for use on sub-MeV electrons, because analog Monte Carlo calculations are too time-consuming and condensed history calculations are inaccurate.
Book Synopsis Monte Carlo Simulation of Silicon-germanium Transistors by : Anucha Yangthiasong
Download or read book Monte Carlo Simulation of Silicon-germanium Transistors written by Anucha Yangthiasong and published by . This book was released on 2002 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Full Band Ensemble Monte Carlo Simulation of Silicon Devices by : Christopher Heechang Lee
Download or read book Full Band Ensemble Monte Carlo Simulation of Silicon Devices written by Christopher Heechang Lee and published by . This book was released on 1994 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Monte Carlo simulator for silicon devices has been developed. The band structure data for this self-consistent device simulator were computed using the empirical pseudopotential method. The ensemble Monte Carlo technique used in the simulations is described in detail. A homogeneous simulator, based on the same transport physics, is used to calibrate the device simulator as well as to indicate the shortcomings of more traditional simulators such as drift-diffusion based models, hydrodynamic and energy balance based models, and nonparabolic band approximation Monte Carlo models. A conventional metal-oxide-semiconductor field effect transistor (MOSFET) is simulated as a test case to validate the simulator. Finally, a floating gate memory element (non-volatile memory) is also examined. In this simulation, the Monte Carlo simulator is used as a post-processor to PISCES IIB in the interest of execution time. Despite the lack of self-consistency and rigor, the simulator is able to produce results which are in good agreement with experimental data.
Book Synopsis Monte Carlo Method for Simulation of Electron Transport in Semiconductors by : Joel Reuben Phillips
Download or read book Monte Carlo Method for Simulation of Electron Transport in Semiconductors written by Joel Reuben Phillips and published by . This book was released on 1991 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A Full Band Monte Carlo Charge Transport Model for Nanoscale Silicon Devices Including Strain by : Björn Fischer
Download or read book A Full Band Monte Carlo Charge Transport Model for Nanoscale Silicon Devices Including Strain written by Björn Fischer and published by . This book was released on 2000 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Monte Carlo Studies of Nonlinear Electron Transport in III-V Semiconductors by : Ki Wook Kim
Download or read book Monte Carlo Studies of Nonlinear Electron Transport in III-V Semiconductors written by Ki Wook Kim and published by . This book was released on 1988 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron transport in III-V semiconductors, especially the Ga/As/AlGaAs material systems, is studied in various nonequilibrium situations. Throughout the study, a Monte Carlo simulation method is used for the analysis of transport properties in the semiclassical Boltzmann transport picture. The present work essentially consists of two aspects. The first topic is hot electron transport in GaAs, focusing on the electron impact ionization effects. The dependence of impact ionization rates on the details of the band structure is investigated by using two (local and nonlocal) pseudopotential methods. The spatial evolution of the ionization rate and the average electron energy are studied in nonuniform fields characteristic of p+-n junctions. The effects of field fluctuations due to the random distribution of dopants are studied as well. The possibility of new GaAs electron-emitting diodes is explored numerically and compared with the corresponding Si devices. The second aspect deals with the effects of conduction band discontinuities on the electron transport. In particular, one-dimensional heterostructures are modeled to study the nonlinear transport across heterointerfaces. (RH).
Book Synopsis Monte Carlo Simulation of KeV-electron Transport in Solid Media by : Naim Ozturk
Download or read book Monte Carlo Simulation of KeV-electron Transport in Solid Media written by Naim Ozturk and published by . This book was released on 1993 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Monte Carlo for Radiation Physics, Particle Transport Simulation and Applications by : Andreas Kling
Download or read book Advanced Monte Carlo for Radiation Physics, Particle Transport Simulation and Applications written by Andreas Kling and published by Springer Science & Business Media. This book was released on 2014-02-22 with total page 1200 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the state of the art of Monte Carlo methods in radiation physics and particle transport simulation and applications. Special attention is paid to algorithm development for modeling, and the analysis of experiments and measurements in a variety of fields.
Book Synopsis Estimators in Monte Carlo Semiconductor Electron Transport Simulations by : Daniel William Bailey
Download or read book Estimators in Monte Carlo Semiconductor Electron Transport Simulations written by Daniel William Bailey and published by . This book was released on 1986 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Monte Carlo Simulation of Electron Transport in a Helium Gas by : Matthew John Burnard
Download or read book Monte Carlo Simulation of Electron Transport in a Helium Gas written by Matthew John Burnard and published by . This book was released on 1989 with total page 117 pages. Available in PDF, EPUB and Kindle. Book excerpt:
