Full Band Ensemble Monte Carlo Simulation Of Silicon Devices

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Full Band Ensemble Monte Carlo Simulation of Silicon Devices

Author : Christopher Heechang Lee
Publisher :
ISBN 13 :
Total Pages : 186 pages
Book Rating : 4.:/5 (312 download)

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Book Synopsis Full Band Ensemble Monte Carlo Simulation of Silicon Devices by : Christopher Heechang Lee

Download or read book Full Band Ensemble Monte Carlo Simulation of Silicon Devices written by Christopher Heechang Lee and published by . This book was released on 1994 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Monte Carlo simulator for silicon devices has been developed. The band structure data for this self-consistent device simulator were computed using the empirical pseudopotential method. The ensemble Monte Carlo technique used in the simulations is described in detail. A homogeneous simulator, based on the same transport physics, is used to calibrate the device simulator as well as to indicate the shortcomings of more traditional simulators such as drift-diffusion based models, hydrodynamic and energy balance based models, and nonparabolic band approximation Monte Carlo models. A conventional metal-oxide-semiconductor field effect transistor (MOSFET) is simulated as a test case to validate the simulator. Finally, a floating gate memory element (non-volatile memory) is also examined. In this simulation, the Monte Carlo simulator is used as a post-processor to PISCES IIB in the interest of execution time. Despite the lack of self-consistency and rigor, the simulator is able to produce results which are in good agreement with experimental data.

Monte Carlo Device Simulation

Author : Karl Hess
Publisher : Springer
ISBN 13 : 9781461368007
Total Pages : 310 pages
Book Rating : 4.3/5 (68 download)

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Book Synopsis Monte Carlo Device Simulation by : Karl Hess

Download or read book Monte Carlo Device Simulation written by Karl Hess and published by Springer. This book was released on 2012-10-11 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.

Monte Carlo Simulation of Semiconductor Devices

Author : C. Moglestue
Publisher : Springer Science & Business Media
ISBN 13 : 9401581339
Total Pages : 343 pages
Book Rating : 4.4/5 (15 download)

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Book Synopsis Monte Carlo Simulation of Semiconductor Devices by : C. Moglestue

Download or read book Monte Carlo Simulation of Semiconductor Devices written by C. Moglestue and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 343 pages. Available in PDF, EPUB and Kindle. Book excerpt: Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.

Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe

Author : Fabian M. Bufler
Publisher : Herbert Utz Verlag
ISBN 13 : 9783896752703
Total Pages : 196 pages
Book Rating : 4.7/5 (527 download)

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Book Synopsis Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe by : Fabian M. Bufler

Download or read book Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe written by Fabian M. Bufler and published by Herbert Utz Verlag. This book was released on 1998 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Full-band Monte Carlo Simulation of Hot Electrons in Scaled Silicon Devices

Author : Amanda Watson Duncan
Publisher :
ISBN 13 :
Total Pages : 270 pages
Book Rating : 4.:/5 (39 download)

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Book Synopsis Full-band Monte Carlo Simulation of Hot Electrons in Scaled Silicon Devices by : Amanda Watson Duncan

Download or read book Full-band Monte Carlo Simulation of Hot Electrons in Scaled Silicon Devices written by Amanda Watson Duncan and published by . This book was released on 1996 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: A full-band Monte Carlo device simulator has been used to study the effects of device scaling on hot electrons in different types of n-channel MOSFETs and flash memory structures. A MOSFET with a single source/drain implant, an LDD MOSFET, an SOI MOSFET, and a MOSFET built on top of a heavily doped "ground plane" have been simulated. Different scaling techniques have been applied to the devices to see the effects on the electric field, the energy distributions of the electrons, and the drain, substrate, and gate currents. The locations of impact ionization events and injection into the gate oxide are examined. It is shown that simpler models cannot adequately predict hot carrier behavior at the channel lengths studied (below 0.3 $mu$m) and that several strategies that are successful at suppressing the hot carrier population for longer channel lengths are not as useful when 0.1 $mu$m channel lengths are approached. The effect of scaling on the programming of stacked-gate and split-gate flash memory devices was also studied. Predictions of hot carrier behavior in small MOSFETs and flash memory devices are made, and suggestions for device design are given.

The Monte Carlo Method for Semiconductor Device Simulation

Author : Carlo Jacoboni
Publisher : Springer Science & Business Media
ISBN 13 : 3709169631
Total Pages : 370 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis The Monte Carlo Method for Semiconductor Device Simulation by : Carlo Jacoboni

Download or read book The Monte Carlo Method for Semiconductor Device Simulation written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.

Hierarchical Device Simulation

Author : Christoph Jungemann
Publisher : Springer Science & Business Media
ISBN 13 : 3709160863
Total Pages : 278 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Hierarchical Device Simulation by : Christoph Jungemann

Download or read book Hierarchical Device Simulation written by Christoph Jungemann and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.

A Full Band Monte Carlo Charge Transport Model for Nanoscale Silicon Devices Including Strain

Author : Björn Fischer
Publisher :
ISBN 13 : 9783826570186
Total Pages : 140 pages
Book Rating : 4.5/5 (71 download)

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Book Synopsis A Full Band Monte Carlo Charge Transport Model for Nanoscale Silicon Devices Including Strain by : Björn Fischer

Download or read book A Full Band Monte Carlo Charge Transport Model for Nanoscale Silicon Devices Including Strain written by Björn Fischer and published by . This book was released on 2000 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advanced Device Modeling and Simulation

Author : Tibor Grasser
Publisher : World Scientific
ISBN 13 : 9789812386076
Total Pages : 220 pages
Book Rating : 4.3/5 (86 download)

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Book Synopsis Advanced Device Modeling and Simulation by : Tibor Grasser

Download or read book Advanced Device Modeling and Simulation written by Tibor Grasser and published by World Scientific. This book was released on 2003 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods.

Nanoscale MOS Transistors

Author : David Esseni
Publisher : Cambridge University Press
ISBN 13 : 1139494384
Total Pages : 489 pages
Book Rating : 4.1/5 (394 download)

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Book Synopsis Nanoscale MOS Transistors by : David Esseni

Download or read book Nanoscale MOS Transistors written by David Esseni and published by Cambridge University Press. This book was released on 2011-01-20 with total page 489 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results

Monte Carlo Simulation of Silicon Devices

Author : Gulzar Ahmed Kathawala
Publisher :
ISBN 13 :
Total Pages : 74 pages
Book Rating : 4.:/5 (534 download)

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Book Synopsis Monte Carlo Simulation of Silicon Devices by : Gulzar Ahmed Kathawala

Download or read book Monte Carlo Simulation of Silicon Devices written by Gulzar Ahmed Kathawala and published by . This book was released on 2003 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Hot Carrier Degradation in Semiconductor Devices

Author : Tibor Grasser
Publisher : Springer
ISBN 13 : 3319089943
Total Pages : 518 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Hot Carrier Degradation in Semiconductor Devices by : Tibor Grasser

Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

Nanophononics

Author : Zlatan Aksamija
Publisher : CRC Press
ISBN 13 : 1351609432
Total Pages : 188 pages
Book Rating : 4.3/5 (516 download)

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Book Synopsis Nanophononics by : Zlatan Aksamija

Download or read book Nanophononics written by Zlatan Aksamija and published by CRC Press. This book was released on 2017-11-22 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heat in most semiconductor materials, including the traditional group IV elements (Si, Ge, diamond), III–V compounds (GaAs, wide-bandgap GaN), and carbon allotropes (graphene, CNTs), as well as emerging new materials like transition metal dichalcogenides (TMDCs), is stored and transported by lattice vibrations (phonons). Phonon generation through interactions with electrons (in nanoelectronics, power, and nonequilibrium devices) and light (optoelectronics) is the central mechanism of heat dissipation in nanoelectronics. This book focuses on the area of thermal effects in nanostructures, including the generation, transport, and conversion of heat at the nanoscale level. Phonon transport, including thermal conductivity in nanostructured materials, as well as numerical simulation methods, such as phonon Monte Carlo, Green’s functions, and first principles methods, feature prominently in the book, which comprises four main themes: (i) phonon generation/heat dissipation, (i) nanoscale phonon transport, (iii) applications/devices (including thermoelectrics), and (iv) emerging materials (graphene/2D). The book also covers recent advances in nanophononics—the study of phonons at the nanoscale. Applications of nanophononics focus on thermoelectric (TE) and tandem TE/photovoltaic energy conversion. The applications are augmented by a chapter on heat dissipation and self-heating in nanoelectronic devices. The book concludes with a chapter on thermal transport in nanoscale graphene ribbons, covering recent advances in phonon transport in 2D materials. The book will be an excellent reference for researchers and graduate students of nanoelectronics, device engineering, nanoscale heat transfer, and thermoelectric energy conversion. The book could also be a basis for a graduate special topics course in the field of nanoscale heat and energy.

Efficient Full-band Monte Carlo Simulation for Device Engineering

Author : Christoph Jungemann
Publisher :
ISBN 13 :
Total Pages : 159 pages
Book Rating : 4.:/5 (249 download)

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Book Synopsis Efficient Full-band Monte Carlo Simulation for Device Engineering by : Christoph Jungemann

Download or read book Efficient Full-band Monte Carlo Simulation for Device Engineering written by Christoph Jungemann and published by . This book was released on 2003 with total page 159 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Monte Carlo Simulation of Silicon Devices Including Quantum Correction and Strain

Author : Brian Winstead
Publisher :
ISBN 13 :
Total Pages : 202 pages
Book Rating : 4.:/5 (52 download)

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Book Synopsis Monte Carlo Simulation of Silicon Devices Including Quantum Correction and Strain by : Brian Winstead

Download or read book Monte Carlo Simulation of Silicon Devices Including Quantum Correction and Strain written by Brian Winstead and published by . This book was released on 2001 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Frontiers In Electronics: Advanced Modeling Of Nanoscale Electron Devices

Author : Benjamin Iniguez
Publisher : World Scientific
ISBN 13 : 9814583200
Total Pages : 204 pages
Book Rating : 4.8/5 (145 download)

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Book Synopsis Frontiers In Electronics: Advanced Modeling Of Nanoscale Electron Devices by : Benjamin Iniguez

Download or read book Frontiers In Electronics: Advanced Modeling Of Nanoscale Electron Devices written by Benjamin Iniguez and published by World Scientific. This book was released on 2014-01-10 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels.

Topics in High Field Transport in Semiconductors

Author : Kevin F. Brennan
Publisher : World Scientific
ISBN 13 : 9810246714
Total Pages : 270 pages
Book Rating : 4.8/5 (12 download)

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Book Synopsis Topics in High Field Transport in Semiconductors by : Kevin F. Brennan

Download or read book Topics in High Field Transport in Semiconductors written by Kevin F. Brennan and published by World Scientific. This book was released on 2001 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book examines some of the charge carrier transport issues encountered in the field of modern semiconductor devices and novel materials. Theoretical approaches to the understanding and modeling of the relevant physical phenomena, seen in devices that have very small spatial dimensions and that operate under high electric field strength, are described in papers written by leading experts and pioneers in this field. In addition, the book examines the transport physics encountered in novel materials such as wide band gap semiconductors (GaN, SiC, etc.) as well as organic semiconductors. Topics in High Field Transport in Semiconductors provides a comprehensive overview that will be beneficial to newcomers as well as engineers and researchers engaged in this exciting field.