Fabrication, Performance and Degradation Mechanism of Aluminium [i.e. Aluminum] Gallium Nitride/gallium Nitride Heterostructure Field Effect Transistors

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ISBN 13 :
Total Pages : 276 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Fabrication, Performance and Degradation Mechanism of Aluminium [i.e. Aluminum] Gallium Nitride/gallium Nitride Heterostructure Field Effect Transistors by : Hyungtak Kim

Download or read book Fabrication, Performance and Degradation Mechanism of Aluminium [i.e. Aluminum] Gallium Nitride/gallium Nitride Heterostructure Field Effect Transistors written by Hyungtak Kim and published by . This book was released on 2003 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication, Performance and Degradation Mechanism of Aluminum Gallium Nitride/gallium Nitride Heterostructure Field-effect Transistors

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ISBN 13 : 9780496520169
Total Pages : 133 pages
Book Rating : 4.5/5 (21 download)

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Book Synopsis Fabrication, Performance and Degradation Mechanism of Aluminum Gallium Nitride/gallium Nitride Heterostructure Field-effect Transistors by : Hyungtak Kim

Download or read book Fabrication, Performance and Degradation Mechanism of Aluminum Gallium Nitride/gallium Nitride Heterostructure Field-effect Transistors written by Hyungtak Kim and published by . This book was released on 2003 with total page 133 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous efforts to realize the potential of Al-GaN/GaN HFETs have been made over the last decade focusing on improving microwave power performance via optimizing material growth and semiconductor processing technologies. As the device performance is getting mature, the device's reliability becomes a major concern for manufacturability of commercially available AlGaN/GaN HFETs. However, comprehensive study on the reliability of these devices is still lacking.

Undoped Aluminum Gallium Nitride/gallium Nitride Based Heterostructure High Electron Mobility Transistors for Microwave Applications

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ISBN 13 :
Total Pages : 320 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Undoped Aluminum Gallium Nitride/gallium Nitride Based Heterostructure High Electron Mobility Transistors for Microwave Applications by : Yunju Sun

Download or read book Undoped Aluminum Gallium Nitride/gallium Nitride Based Heterostructure High Electron Mobility Transistors for Microwave Applications written by Yunju Sun and published by . This book was released on 2006 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Design and Fabrication of Aluminum Gallium Nitride

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ISBN 13 :
Total Pages : 298 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Design and Fabrication of Aluminum Gallium Nitride by : Kenneth Kanin Chu

Download or read book Design and Fabrication of Aluminum Gallium Nitride written by Kenneth Kanin Chu and published by . This book was released on 2000 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Charge Instability and Localization in Aluminum Gallium Nitride/gallium Nitride Heterostructures and Heterostructure Field Effect Transistors Studied by Kelvin Probe Microscopy

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ISBN 13 :
Total Pages : 378 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Charge Instability and Localization in Aluminum Gallium Nitride/gallium Nitride Heterostructures and Heterostructure Field Effect Transistors Studied by Kelvin Probe Microscopy by : Goutam Koley

Download or read book Charge Instability and Localization in Aluminum Gallium Nitride/gallium Nitride Heterostructures and Heterostructure Field Effect Transistors Studied by Kelvin Probe Microscopy written by Goutam Koley and published by . This book was released on 2003 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Aluminum gallium nitride/gallium nitride heterojunction field-effect transistors grown by metalorganic chemical vapor deposition

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ISBN 13 :
Total Pages : 124 pages
Book Rating : 4.:/5 (426 download)

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Book Synopsis Aluminum gallium nitride/gallium nitride heterojunction field-effect transistors grown by metalorganic chemical vapor deposition by : Michael Ming Wong

Download or read book Aluminum gallium nitride/gallium nitride heterojunction field-effect transistors grown by metalorganic chemical vapor deposition written by Michael Ming Wong and published by . This book was released on 1999 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt:

A Study of Aluminum Gallium Nitride/gallium Nitride Polarization Barriers, Aluminum Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors and Polarization-based Ohmic Contacts

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ISBN 13 :
Total Pages : 238 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis A Study of Aluminum Gallium Nitride/gallium Nitride Polarization Barriers, Aluminum Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors and Polarization-based Ohmic Contacts by : Choudhury Jayant Praharaj

Download or read book A Study of Aluminum Gallium Nitride/gallium Nitride Polarization Barriers, Aluminum Gallium Nitride/silicon Carbide Heterojunction Bipolar Transistors and Polarization-based Ohmic Contacts written by Choudhury Jayant Praharaj and published by . This book was released on 2004 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electrical Performance and Physics of Ohmic Contact on Undoped Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistor

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ISBN 13 :
Total Pages : 148 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Electrical Performance and Physics of Ohmic Contact on Undoped Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistor by : Yun-Ju Sun

Download or read book Electrical Performance and Physics of Ohmic Contact on Undoped Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistor written by Yun-Ju Sun and published by . This book was released on 2004 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Design, Fabrication, and Performance of Aluminum Gallium Arsenide/gallium Arsenide Modulation-doped Field-effect Transistors for High-speed Applications

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ISBN 13 :
Total Pages : 468 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Design, Fabrication, and Performance of Aluminum Gallium Arsenide/gallium Arsenide Modulation-doped Field-effect Transistors for High-speed Applications by : Allen Nicholas Lepore

Download or read book Design, Fabrication, and Performance of Aluminum Gallium Arsenide/gallium Arsenide Modulation-doped Field-effect Transistors for High-speed Applications written by Allen Nicholas Lepore and published by . This book was released on 1988 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Investigation of Aluminum Gallium Nitride/gallium Nitride Modulation Doped Field Effect Transistors

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ISBN 13 :
Total Pages : 110 pages
Book Rating : 4.:/5 (397 download)

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Book Synopsis Investigation of Aluminum Gallium Nitride/gallium Nitride Modulation Doped Field Effect Transistors by : Ozgur Aktas

Download or read book Investigation of Aluminum Gallium Nitride/gallium Nitride Modulation Doped Field Effect Transistors written by Ozgur Aktas and published by . This book was released on 1997 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Aluminum Gallium Nitride/gallium Nitride HEMTs for High-Power Applications: Transistor Design Issues and Process Development

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (931 download)

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Book Synopsis Aluminum Gallium Nitride/gallium Nitride HEMTs for High-Power Applications: Transistor Design Issues and Process Development by :

Download or read book Aluminum Gallium Nitride/gallium Nitride HEMTs for High-Power Applications: Transistor Design Issues and Process Development written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Process Development and Characterization of AlGaN/GaN Heterostructure Field-Effect Transistors

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (931 download)

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Book Synopsis Process Development and Characterization of AlGaN/GaN Heterostructure Field-Effect Transistors by :

Download or read book Process Development and Characterization of AlGaN/GaN Heterostructure Field-Effect Transistors written by and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride/Gallium Nitride Heterostructures

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ISBN 13 :
Total Pages : 176 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride/Gallium Nitride Heterostructures by : John W. McClory

Download or read book The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride/Gallium Nitride Heterostructures written by John W. McClory and published by . This book was released on 2008 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) were irradiated at low temperature and the temperature dependent changes to drain current, gate current, capacitance, and transconductance were measured. The results were compared to the charge control model of the drain current and trap-assisted tunneling model of the gate current to determine the source of the radiation-induced changes. AlGaN/GaN HFETs demonstrated threshold voltage shifts and drain current changes after irradiation. After electron and neutron irradiation applied at ~80 K, measurement of the drain current at this temperature showed an increase that saturated after 10^13 electrons/cm^2 or 10^10 neutrons/cm^2 due to positive charge build-up in the AlGaN layer. Measurement at room temperature after low-temperature irradiation showed a decrease in drain current due to the build up of charged defects along the AlGaN-GaN interface that decrease the mobility in the 2DEG and hence decrease the current. Gate leakage currents increased after low temperature irradiation and the increase was persistent after room temperature annealing. The increased leakage current was attributed to trap-assisted tunneling after application of the trap-assisted tunneling model. Comparison of the model to post-irradiation vs. pre-irradiation data showed that the dominant parameter change causing increased gate current was an increase in trap concentration.

ReliabilityStudy Of Power Gallium Nitride Transistors

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Publisher : Marcon Denis
ISBN 13 : 9460183751
Total Pages : 229 pages
Book Rating : 4.4/5 (61 download)

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Book Synopsis ReliabilityStudy Of Power Gallium Nitride Transistors by :

Download or read book ReliabilityStudy Of Power Gallium Nitride Transistors written by and published by Marcon Denis. This book was released on with total page 229 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication and Characterization of Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors

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ISBN 13 :
Total Pages : 312 pages
Book Rating : 4.:/5 (529 download)

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Book Synopsis Fabrication and Characterization of Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors by : Vinayak Tilak

Download or read book Fabrication and Characterization of Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors written by Vinayak Tilak and published by . This book was released on 2002 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication of Aluminum Gallium Nitride/Gallium Nitride MESFET And It's Applications in Biosensing

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ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (14 download)

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Book Synopsis Fabrication of Aluminum Gallium Nitride/Gallium Nitride MESFET And It's Applications in Biosensing by : Siddharth Alur

Download or read book Fabrication of Aluminum Gallium Nitride/Gallium Nitride MESFET And It's Applications in Biosensing written by Siddharth Alur and published by . This book was released on 2010 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Process Development for Aluminum Gallium Nitride-Based Enhancement- and Depletion -Mode HEMTs

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (931 download)

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Book Synopsis Process Development for Aluminum Gallium Nitride-Based Enhancement- and Depletion -Mode HEMTs by : William B. Lanford

Download or read book Process Development for Aluminum Gallium Nitride-Based Enhancement- and Depletion -Mode HEMTs written by William B. Lanford and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: