Introductory Nanoelectronics

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Publisher : CRC Press
ISBN 13 : 1351204661
Total Pages : 410 pages
Book Rating : 4.3/5 (512 download)

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Book Synopsis Introductory Nanoelectronics by : Vinod Kumar Khanna

Download or read book Introductory Nanoelectronics written by Vinod Kumar Khanna and published by CRC Press. This book was released on 2020-07-20 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt: This introductory text develops the reader’s fundamental understanding of core principles and experimental aspects underlying the operation of nanoelectronic devices. The author makes a thorough and systematic presentation of electron transport in quantum-confined systems such as quantum dots, quantum wires, and quantum wells together with Landauer-Büttiker formalism and non-equilibrium Green’s function approach. The coverage encompasses nanofabrication techniques and characterization tools followed by a comprehensive exposition of nanoelectronic devices including resonant tunneling diodes, nanoscale MOSFETs, carbon nanotube FETs, high-electron-mobility transistors, single-electron transistors, and heterostructure optoelectronic devices. The writing throughout is simple and straightforward, with clearly drawn illustrations and extensive self-study exercises for each chapter. Introduces the basic concepts underlying the operation of nanoelectronic devices. Offers a broad overview of the field, including state-of-the-art developments. Covers the relevant quantum and solid-state physics and nanoelectronic device principles. Written in lucid language with accessible mathematical treatment. Includes extensive end-of-chapter exercises and many insightful diagrams.

III-Nitride Based Light Emitting Diodes and Applications

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 9400758634
Total Pages : 434 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis III-Nitride Based Light Emitting Diodes and Applications by : Tae-Yeon Seong

Download or read book III-Nitride Based Light Emitting Diodes and Applications written by Tae-Yeon Seong and published by Springer Science & Business Media. This book was released on 2014-07-08 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.

Scientific and Technical Aerospace Reports

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Publisher :
ISBN 13 :
Total Pages : 500 pages
Book Rating : 4.X/5 (4 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:

High Brightness Light Emitting Diodes

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Publisher : Academic Press
ISBN 13 : 0080864457
Total Pages : 489 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis High Brightness Light Emitting Diodes by :

Download or read book High Brightness Light Emitting Diodes written by and published by Academic Press. This book was released on 1998-02-09 with total page 489 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume 48in the Semiconductors and Semimetals series discusses the physics and chemistry of electronic materials, a subject of growing practical importance in the semiconductor devices industry. The contributors discuss the current state of knowledge and provide insight into future developments of this important field.

Electrical & Electronics Abstracts

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Publisher :
ISBN 13 :
Total Pages : 1948 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Electrical & Electronics Abstracts by :

Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1948 pages. Available in PDF, EPUB and Kindle. Book excerpt:

International Aerospace Abstracts

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Publisher :
ISBN 13 :
Total Pages : 974 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis International Aerospace Abstracts by :

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Power GaN Devices

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Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Nitrides and Related Wide Band Gap Materials

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Publisher :
ISBN 13 :
Total Pages : 440 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Nitrides and Related Wide Band Gap Materials by : A. Hangleiter

Download or read book Nitrides and Related Wide Band Gap Materials written by A. Hangleiter and published by . This book was released on 1999-08-19 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Symposium on 'Nitrides and related wide band gap materials' at the 1998 Spring Meeting of the European Materials Research Society (E-MRS) in Strasbourg, France, was the third Symposium of its kind at an E-MRS meeting. Beginning in 1996, these Symposia enjoyed a steadily increasing popularity among European and international nitride researchers. Contributions covered the areas of hetero-epitaxy, bulk growth, structural, electrical and optical characterisation and device fabrication. Researchers from about 20 different countries presented their work at this symposium. Naturally, most papers were from within Europe (Germany, France, Russia and the United Kingdom) but there was also a remarkable number of contributions from overseas (USA, Japan and Korea.) For about 5 years now, semiconducting group-III nitrides have attracted an enormous level of research activity all over the world. Essentially this was triggered by the breakthroughs achieved by Shuji Nakamura and his group in Japan, who succeeded in making highly efficient blue, green and yellow light emitting diodes as well as violet laser diodes based on A1GaInN. Since then, intensive research related to material growth, device development, as well as to the fundamental properties of these materials is being carried out. The outstanding contribution of Shuji Nakamura to this field was underlined by his plenary lecture during this E-MRS meeting. He presented his most recent progress towards amber LED's and long-lived violet laser diodes.

Advanced Semiconductor Devices - Proceedings Of The 2006 Lester Eastman Conference

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Author :
Publisher : World Scientific
ISBN 13 : 9814474746
Total Pages : 205 pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis Advanced Semiconductor Devices - Proceedings Of The 2006 Lester Eastman Conference by : Paul Maki

Download or read book Advanced Semiconductor Devices - Proceedings Of The 2006 Lester Eastman Conference written by Paul Maki and published by World Scientific. This book was released on 2007-06-27 with total page 205 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume covers five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicon-germanium devices, nanoelectronics and ballistic devices, and the characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many “firsts” and breakthrough results, as has become a tradition with the Lester Eastman Conference, and will allow readers to obtain up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of state-of-the-art and “hot off the press” results making the book required reading for engineers, scientists, and students working on advanced and high speed device technology.

GaN and Related Materials

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Publisher : CRC Press
ISBN 13 : 1000448428
Total Pages : 556 pages
Book Rating : 4.0/5 (4 download)

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Book Synopsis GaN and Related Materials by : Stephen J. Pearton

Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 2021-10-08 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.

Wide Bandgap Based Devices

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Publisher : MDPI
ISBN 13 : 3036505660
Total Pages : 242 pages
Book Rating : 4.0/5 (365 download)

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Book Synopsis Wide Bandgap Based Devices by : Farid Medjdoub

Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Optics in Our Time

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Publisher : Springer
ISBN 13 : 3319319035
Total Pages : 509 pages
Book Rating : 4.3/5 (193 download)

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Book Synopsis Optics in Our Time by : Mohammad D. Al-Amri

Download or read book Optics in Our Time written by Mohammad D. Al-Amri and published by Springer. This book was released on 2016-12-12 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: Light and light based technologies have played an important role in transforming our lives via scientific contributions spanned over thousands of years. In this book we present a vast collection of articles on various aspects of light and its applications in the contemporary world at a popular or semi-popular level. These articles are written by the world authorities in their respective fields. This is therefore a rare volume where the world experts have come together to present the developments in this most important field of science in an almost pedagogical manner. This volume covers five aspects related to light. The first presents two articles, one on the history of the nature of light, and the other on the scientific achievements of Ibn-Haitham (Alhazen), who is broadly considered the father of modern optics. These are then followed by an article on ultrafast phenomena and the invisible world. The third part includes papers on specific sources of light, the discoveries of which have revolutionized optical technologies in our lifetime. They discuss the nature and the characteristics of lasers, Solid-state lighting based on the Light Emitting Diode (LED) technology, and finally modern electron optics and its relationship to the Muslim golden age in science. The book’s fourth part discusses various applications of optics and light in today's world, including biophotonics, art, optical communication, nanotechnology, the eye as an optical instrument, remote sensing, and optics in medicine. In turn, the last part focuses on quantum optics, a modern field that grew out of the interaction of light and matter. Topics addressed include atom optics, slow, stored and stationary light, optical tests of the foundation of physics, quantum mechanical properties of light fields carrying orbital angular momentum, quantum communication, and Wave-Particle dualism in action.

III-nitride Devices and Nanoengineering

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Author :
Publisher : World Scientific
ISBN 13 : 1848162235
Total Pages : 477 pages
Book Rating : 4.8/5 (481 download)

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Book Synopsis III-nitride Devices and Nanoengineering by : Zhe Chuan Feng

Download or read book III-nitride Devices and Nanoengineering written by Zhe Chuan Feng and published by World Scientific. This book was released on 2008 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.

Physics Briefs

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Publisher :
ISBN 13 :
Total Pages : 950 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Physics Briefs by :

Download or read book Physics Briefs written by and published by . This book was released on 1992 with total page 950 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII)

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Author :
Publisher : The Electrochemical Society
ISBN 13 : 9781566771160
Total Pages : 524 pages
Book Rating : 4.7/5 (711 download)

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Book Synopsis Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII) by : F. Ren

Download or read book Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII) written by F. Ren and published by The Electrochemical Society. This book was released on 1995 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt:

GaN Transistors for Efficient Power Conversion

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Publisher : John Wiley & Sons
ISBN 13 : 1119594421
Total Pages : 518 pages
Book Rating : 4.1/5 (195 download)

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Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-12 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

Master's Theses Directories

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Publisher :
ISBN 13 :
Total Pages : 316 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Master's Theses Directories written by and published by . This book was released on 2005 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Education, arts and social sciences, natural and technical sciences in the United States and Canada".