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Experiments And Modeling Of High Frequency Noise In Deep Submicron Mosfets
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Book Synopsis Compact Modeling by : Gennady Gildenblat
Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Book Synopsis 75th Anniversary of the Transistor by : Arokia Nathan
Download or read book 75th Anniversary of the Transistor written by Arokia Nathan and published by John Wiley & Sons. This book was released on 2023-08-01 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: 75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.
Book Synopsis Tradeoffs and Optimization in Analog CMOS Design by : David Binkley
Download or read book Tradeoffs and Optimization in Analog CMOS Design written by David Binkley and published by John Wiley & Sons. This book was released on 2008-09-15 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analog CMOS integrated circuits are in widespread use for communications, entertainment, multimedia, biomedical, and many other applications that interface with the physical world. Although analog CMOS design is greatly complicated by the design choices of drain current, channel width, and channel length present for every MOS device in a circuit, these design choices afford significant opportunities for optimizing circuit performance. This book addresses tradeoffs and optimization of device and circuit performance for selections of the drain current, inversion coefficient, and channel length, where channel width is implicitly considered. The inversion coefficient is used as a technology independent measure of MOS inversion that permits design freely in weak, moderate, and strong inversion. This book details the significant performance tradeoffs available in analog CMOS design and guides the designer towards optimum design by describing: An interpretation of MOS modeling for the analog designer, motivated by the EKV MOS model, using tabulated hand expressions and figures that give performance and tradeoffs for the design choices of drain current, inversion coefficient, and channel length; performance includes effective gate-source bias and drain-source saturation voltages, transconductance efficiency, transconductance distortion, normalized drain-source conductance, capacitances, gain and bandwidth measures, thermal and flicker noise, mismatch, and gate and drain leakage current Measured data that validates the inclusion of important small-geometry effects like velocity saturation, vertical-field mobility reduction, drain-induced barrier lowering, and inversion-level increases in gate-referred, flicker noise voltage In-depth treatment of moderate inversion, which offers low bias compliance voltages, high transconductance efficiency, and good immunity to velocity saturation effects for circuits designed in modern, low-voltage processes Fabricated design examples that include operational transconductance amplifiers optimized for various tradeoffs in DC and AC performance, and micropower, low-noise preamplifiers optimized for minimum thermal and flicker noise A design spreadsheet, available at the book web site, that facilitates rapid, optimum design of MOS devices and circuits Tradeoffs and Optimization in Analog CMOS Design is the first book dedicated to this important topic. It will help practicing analog circuit designers and advanced students of electrical engineering build design intuition, rapidly optimize circuit performance during initial design, and minimize trial-and-error circuit simulations.
Book Synopsis Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices by : Josef Sikula
Download or read book Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices written by Josef Sikula and published by Springer Science & Business Media. This book was released on 2006-02-21 with total page 371 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of recently developed experimental methods for noise research in nanoscale electronic devices, conducted by specialists in transport and stochastic phenomena in nanoscale physics. The approach described is to create methods for experimental observations of noise sources, their localization and their frequency spectrum, voltage-current and thermal dependences. Our current knowledge of measurement methods for mesoscopic devices is summarized to identify directions for future research, related to downscaling effects. The directions for future research into fluctuation phenomena in quantum dot and quantum wire devices are specified. Nanoscale electronic devices will be the basic components for electronics of the 21st century. From this point of view the signal-to-noise ratio is a very important parameter for the device application. Since the noise is also a quality and reliability indicator, experimental methods will have a wide application in the future.
Book Synopsis Simulation of Semiconductor Processes and Devices 2001 by : Dimitris Tsoukalas
Download or read book Simulation of Semiconductor Processes and Devices 2001 written by Dimitris Tsoukalas and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Book Synopsis Modeling And Parameter Extraction Techniques Of Silicon-based Radio Frequency Devices by : Ao Zhang
Download or read book Modeling And Parameter Extraction Techniques Of Silicon-based Radio Frequency Devices written by Ao Zhang and published by World Scientific. This book was released on 2023-03-21 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods.The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.
Book Synopsis Noise in Nanoscale Semiconductor Devices by : Tibor Grasser
Download or read book Noise in Nanoscale Semiconductor Devices written by Tibor Grasser and published by Springer Nature. This book was released on 2020-04-26 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
Book Synopsis Low-Frequency Noise in Advanced MOS Devices by : Martin Haartman
Download or read book Low-Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.
Book Synopsis Cmos Rf Modeling, Characterization And Applications by : M Jamal Deen
Download or read book Cmos Rf Modeling, Characterization And Applications written by M Jamal Deen and published by World Scientific. This book was released on 2002-04-10 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.
Book Synopsis Analog Circuit Design by : Willy M.C. Sansen
Download or read book Analog Circuit Design written by Willy M.C. Sansen and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new book on Analog Circuit Design contains the revised contributions of all the tutorial speakers of the eight workshop AACD (Advances in Analog Circuit Design), which was held at Nice, France on March 23-25, 1999. The workshop was organized by Yves Leduc of TI Nice, France. The program committee consisted of Willy Sansen, K.U.Leuven, Belgium, Han Huijsing, T.U.Delft, The Netherlands and Rudy van de Plassche, T.U.Eindhoven, The Netherlands. The aim of these AACD workshops is to bring together a restricted group of about 100 people who are personally advancing the frontiers of analog circuit design to brainstorm on new possibilities and future developments in a restricted number of fields. They are concentrated around three topics. In each topic six speakers give a tutorial presentation. Eighteen papers are thus included in this book. The topics of 1999 are: (X)DSL and other communication systems RF MOST models Integrated filters and oscillators The other topics, which have been coverd before, are: 1992 Operational amplifiers A-D Converters Analog CAD 1993 Mixed-mode A+D design Sensor interfaces Communication circuits 1994 Low-power low-voltage design Integrated filters Smart power 1995 Low-noise low-power low-voltge design Mixed-mode design with CAD tools Voltage, current and time references vii viii 1996 RF CMOS circuit design Bandpass sigma-delta and other data converters Translinear circuits 1997 RF A-D Converters Sensor and actuator interfaces Low-noise oscillators, PLL's and synthesizers 1998 I-Volt electronics Design and implementation of mixed-mode systems Low-noise amplifiers and RF power amplifiers for telecommunications
Download or read book Noise in Devices and Circuits written by and published by . This book was released on 2003 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Hierarchical Device Simulation by : Christoph Jungemann
Download or read book Hierarchical Device Simulation written by Christoph Jungemann and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Download or read book Essderc'98 written by and published by Atlantica Séguier Frontières. This book was released on 1998 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advances in Imaging and Electron Physics by :
Download or read book Advances in Imaging and Electron Physics written by and published by Academic Press. This book was released on 2012-11-01 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Imaging and Electron Physics merges two long-running serials--Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. This series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains. - Contributions from leading authorities - Informs and updates on all the latest developments in the field
Book Synopsis Progress in SOI Structures and Devices Operating at Extreme Conditions by : Francis Balestra
Download or read book Progress in SOI Structures and Devices Operating at Extreme Conditions written by Francis Balestra and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.
Book Synopsis Noise in Solid State Devices and Circuits by : Albert Van der Ziel
Download or read book Noise in Solid State Devices and Circuits written by Albert Van der Ziel and published by Wiley-Interscience. This book was released on 1986-05-13 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gives basic and up-to-date information about noise sources in electronic devices. Demonstrates how this information can be used to calculate the noise performance, in particular the noise figure, of electronic circuits using these devices. Optimization procedures, both for the circuits and for the devices, are then devised based on these data. Gives an elementary treatment of thermal noise, diffusion noise, and velocity-fluctuation noise, including quantum effects in thermal noise and maser noise.
Book Synopsis Mosfet Modeling For Circuit Analysis And Design by : Carlos Galup-montoro
Download or read book Mosfet Modeling For Circuit Analysis And Design written by Carlos Galup-montoro and published by World Scientific. This book was released on 2007-02-27 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
