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Evaluation Of Organometallic As And P Sources For The Growth Of Iii V Semiconductors In Organometallic Vapor Phase Epitaxy
Download Evaluation Of Organometallic As And P Sources For The Growth Of Iii V Semiconductors In Organometallic Vapor Phase Epitaxy full books in PDF, epub, and Kindle. Read online Evaluation Of Organometallic As And P Sources For The Growth Of Iii V Semiconductors In Organometallic Vapor Phase Epitaxy ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Evaluation of Organometallic As and P Sources for the Growth of III-V Semiconductors in Organometallic Vapor Phase Epitaxy by : Changhua Chen
Download or read book Evaluation of Organometallic As and P Sources for the Growth of III-V Semiconductors in Organometallic Vapor Phase Epitaxy written by Changhua Chen and published by . This book was released on 1990 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Organometallic Vapor-Phase Epitaxy by : Gerald B. Stringfellow
Download or read book Organometallic Vapor-Phase Epitaxy written by Gerald B. Stringfellow and published by Elsevier. This book was released on 2012-12-02 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.
Book Synopsis Novel Precursors for Organometallic Vapor Phase Epitaxy by :
Download or read book Novel Precursors for Organometallic Vapor Phase Epitaxy written by and published by . This book was released on 1992 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the development of organometallic vapor phase epitaxy (OMVPE) for the growth of III/V semiconductor materials, the choice of group III and group V source molecules has been limited: (1) only trimethyl- and triethyl- group IV and antimony compounds, developed for other applications, were available; (2) the hydrides were the only As and P sources capable of producing device quality material. The hazard posed by the hydride sources, due to their extreme toxicity as well as their storage in high pressure cylinders, was a major motivation for the development of new precursor molecules. This led to the realization that many features of the OMVPE process could be improved by the development of designer source molecules. This paper will emphasize the tertiarybutyl- As, P, and Sb precursors C4H9AsH2, C4H9PH2, and C4H9Sb(CH3)2. However, recent results using alternate In precursors, such as triisopropylindium (C3H7)31n, will be included. The fundamental aspects of the design of source molecules, including pyrolysis routes, will be mentioned; however, the focus is on the practical results obtained using these precursors for the OMVPE growth of III/V semiconductors.
Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) by : Stuart Irvine
Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-09-04 with total page 907 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1994 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Organometallic Vapor-Phase Epitaxy by : Gerald B. Stringfellow
Download or read book Organometallic Vapor-Phase Epitaxy written by Gerald B. Stringfellow and published by Elsevier. This book was released on 1999-03-04 with total page 599 pages. Available in PDF, EPUB and Kindle. Book excerpt: Organometallic Vapor-Phase Epitaxy describes the operation of a particular technique for the production of compound semiconductor materials. It describes how the technique works, how it can be used for the growth of particular materials and structures, and the application of these materials for specific devices. It contains not only a fundamental description of the operation of the technique but also contains lists of data useful for the everyday operation of OMVPE reactors. It also offers specific recipes that can be used to produce a wide range of specific materials, structures, and devices. Updated with new emphasis on the semiconducting nitride materials—GaN and its alloys with In and Al Emphasizes the newly understood aspects of surface processes Contains a new chapter, as well as several new sections in chapters on thermodynamics and kinetics
Book Synopsis Organometallic Vapor-phase Epitaxial Growth and Characterization of III-V Semiconductor Alloys Emitting Visible Light by : Diansheng Cao
Download or read book Organometallic Vapor-phase Epitaxial Growth and Characterization of III-V Semiconductor Alloys Emitting Visible Light written by Diansheng Cao and published by . This book was released on 1991 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Comparison of Epitaxial Growth Techniques for III-V Layer Structures by :
Download or read book Comparison of Epitaxial Growth Techniques for III-V Layer Structures written by and published by . This book was released on 1992 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial processes are essential for the growth of III/V alloy semiconductors for electronic and photonic devices. For the growth of elaborately structured materials such as heterojunctions, quantum wells, and superlattices for the fabrication of the most advanced electronic and photonic devices, in particular, vapor phase growth processes have become standard. This paper will deal specifically with the epitaxial (mainly vapor phase) growth of III/V semiconductor materials. The approach taken here is somewhat non-traditional due to the recent hybridization of both precursor molecules and growth techniques. The distinctions between the various growth techniques are traditionally based on the nature of the precursor molecules. Chloride VPE uses chloride group III and and group V molecules and hydride VPE uses hydride group V precursors, while organometallic vapor phase epitaxy uses organometallic group III precursors and either hydride or organometallic group V precursors. Recently, we have developed group III precursors with both organic and Cl radicals on the same molecule. Similarly, group V precursors containing both organic and H radicals have been developed. Thus, it is unclear whether the techniques using such molecules should be called organometallic, chloride, or hydride VPE.
Book Synopsis Mechanistic Study of Organometallic Vapor Phase Epitaxy by :
Download or read book Mechanistic Study of Organometallic Vapor Phase Epitaxy written by and published by . This book was released on 1990 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: Only AsH3 and PH3 have been used as the group V source molecules for organometallic vapor phase epitaxy (OMVPE) of III/V semiconductors until recently, since they have been the only precursors yielding device quality materials. This paper reviews recent work on the pyrolysis of individual organometallic molecules, with emphasis on the group V sources, including: (1) the methylarsines, di- and tri-methylarsine, (2) the ethylarsines, mono-, di-, and tri-ethylarsine, and (3) the singly substituted tertiarybutyl arsine and phosphine molecules. The pyrolysis and growth reactions occurring when both group III and group V precursors are present simultaneously, i.e., the reactions occuring during OMVPE growth of several III/V semiconductors, are also briefly reviewed.
Book Synopsis Organometallic Vapor Phase Epitaxial Growth of Bismuth-containing III/V Alloy Semiconductors by : Kevin Yan-Wing Ma
Download or read book Organometallic Vapor Phase Epitaxial Growth of Bismuth-containing III/V Alloy Semiconductors written by Kevin Yan-Wing Ma and published by . This book was released on 1992 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2001 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Organometallic Vapor Phase Epitaxy by :
Download or read book Organometallic Vapor Phase Epitaxy written by and published by . This book was released on 1992 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Organometallic Vapor-phase Epitaxy Process Design for Indium-based III-V Semiconductors by : Kirk Lee Fry
Download or read book Organometallic Vapor-phase Epitaxy Process Design for Indium-based III-V Semiconductors written by Kirk Lee Fry and published by . This book was released on 1990 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metal Organic Vapour Phase Epitaxy for the Growth of III-V Semiconductor Structures by : Maarten Reinier Leys
Download or read book Metal Organic Vapour Phase Epitaxy for the Growth of III-V Semiconductor Structures written by Maarten Reinier Leys and published by . This book was released on 1990 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Organometallic Vapor Phase Epitaxial Growth of New III-V Semiconductor Alloys by : Ming-Jiunn Jou
Download or read book Organometallic Vapor Phase Epitaxial Growth of New III-V Semiconductor Alloys written by Ming-Jiunn Jou and published by . This book was released on 1990 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Heteroepitaxy of Semiconductors by : John E. Ayers
Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2018-10-08 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field.
