Etude A Lechelle Atomique De Limplantation Du Fer Dans Le Carbure De Silicium Sic

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Electrical Characterization of Ion-Implanted 4H-Silicon Carbide

Author : Christian Morath
Publisher :
ISBN 13 : 9781423546870
Total Pages : 166 pages
Book Rating : 4.5/5 (468 download)

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Book Synopsis Electrical Characterization of Ion-Implanted 4H-Silicon Carbide by : Christian Morath

Download or read book Electrical Characterization of Ion-Implanted 4H-Silicon Carbide written by Christian Morath and published by . This book was released on 1999-03-01 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrical characterization has been performed on ion-implanted p- type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantation/annealing scheme. Low doped (Na - Nd = 5x10(exp 15)/cu cm) epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1x10(exp 13) to 1x10(exp 14)/sq cm at room temperature or 500 deg. C. The electrical technique of Temperature Dependent Hall Effect (TDHE) indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of ^252 and ^285 meV, respectively. The highest activation efficiency for Al and B implanted samples was found to occur at anneal temperatures of ^1650 deg C and ^1550 deg C, respectively. The implantation dose resulting in the highest concentration for Al and B implantation was found to be 3x10(exp 13)/sq cm. An average peak mobility of ^200 sq cm/ V s was found for an Al implanted sample; this is considerably higher than the average peak mobility for the B implanted samples, ^100 sq cm/ V s. No significant gains in activation efficiency or mobility were evident with high temperature implantation compared to the room temperature implantation. Overall, Al implantation of 4H-SiC appears superior with regard to these properties compared to B implantation.

Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors

Author : Toan Dinh
Publisher : Springer
ISBN 13 : 9811325715
Total Pages : 122 pages
Book Rating : 4.8/5 (113 download)

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Book Synopsis Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors by : Toan Dinh

Download or read book Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors written by Toan Dinh and published by Springer. This book was released on 2018-10-05 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the fundamentals of the thermoelectrical effect in silicon carbide (SiC), including the thermoresistive, thermoelectric, thermocapacitive and thermoelectronic effects. It summarizes the growth of SiC, its properties and fabrication processes for SiC devices and introduces the thermoelectrical sensing theories in different SiC morphologies and polytypes. Further, it reviews the recent advances in the characterization of the thermoelectrical effect in SiC at high temperatures. Discussing several desirable features of thermoelectrical SiC sensors and recent developments in these sensors, the book provides useful guidance on developing high sensitivity and linearity, fast-response SiC sensing devices based on thermoelectrical effects.

Process Technology for Silicon Carbide Devices

Author : Carl-Mikael Zetterling
Publisher : IET
ISBN 13 : 9780852969984
Total Pages : 202 pages
Book Rating : 4.9/5 (699 download)

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Book Synopsis Process Technology for Silicon Carbide Devices by : Carl-Mikael Zetterling

Download or read book Process Technology for Silicon Carbide Devices written by Carl-Mikael Zetterling and published by IET. This book was released on 2002 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics etc) and describes how these are integrated in device manufacture.

Physics and Technology of Silicon Carbide Devices

Author : Yasuto Hijikata
Publisher : BoD – Books on Demand
ISBN 13 : 9535109170
Total Pages : 416 pages
Book Rating : 4.5/5 (351 download)

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Book Synopsis Physics and Technology of Silicon Carbide Devices by : Yasuto Hijikata

Download or read book Physics and Technology of Silicon Carbide Devices written by Yasuto Hijikata and published by BoD – Books on Demand. This book was released on 2012-10-16 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.

Properties and Applications of Silicon Carbide

Author : Rosario Gerhardt
Publisher : BoD – Books on Demand
ISBN 13 : 9533072016
Total Pages : 550 pages
Book Rating : 4.5/5 (33 download)

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Book Synopsis Properties and Applications of Silicon Carbide by : Rosario Gerhardt

Download or read book Properties and Applications of Silicon Carbide written by Rosario Gerhardt and published by BoD – Books on Demand. This book was released on 2011-04-04 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, we explore an eclectic mix of articles that highlight some new potential applications of SiC and different ways to achieve specific properties. Some articles describe well-established processing methods, while others highlight phase equilibria or machining methods. A resurgence of interest in the structural arena is evident, while new ways to utilize the interesting electromagnetic properties of SiC continue to increase.

Sic Materials And Devices - Volume 1

Author : Sergey Rumyantsev
Publisher : World Scientific
ISBN 13 : 981447777X
Total Pages : 342 pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis Sic Materials And Devices - Volume 1 by : Sergey Rumyantsev

Download or read book Sic Materials And Devices - Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

Fundamentals of Silicon Carbide Technology

Author : Tsunenobu Kimoto
Publisher : John Wiley & Sons
ISBN 13 : 1118313550
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)

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Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Silicon Carbide and Related Materials 2021

Author : Jean François Michaud
Publisher : Trans Tech Publications Ltd
ISBN 13 : 3035738246
Total Pages : 728 pages
Book Rating : 4.0/5 (357 download)

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Book Synopsis Silicon Carbide and Related Materials 2021 by : Jean François Michaud

Download or read book Silicon Carbide and Related Materials 2021 written by Jean François Michaud and published by Trans Tech Publications Ltd. This book was released on 2022-05-31 with total page 728 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021)

Silicon Carbide

Author : Chuan Feng Zhe
Publisher : CRC Press
ISBN 13 : 1591690234
Total Pages : 412 pages
Book Rating : 4.5/5 (916 download)

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Book Synopsis Silicon Carbide by : Chuan Feng Zhe

Download or read book Silicon Carbide written by Chuan Feng Zhe and published by CRC Press. This book was released on 2003-10-30 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.

Some Factors Affecting the Growth of Beta Silicon Carbide

Author : Charles Edward Ryan
Publisher :
ISBN 13 :
Total Pages : 28 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Some Factors Affecting the Growth of Beta Silicon Carbide by : Charles Edward Ryan

Download or read book Some Factors Affecting the Growth of Beta Silicon Carbide written by Charles Edward Ryan and published by . This book was released on 1966 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report discusses the growth of beta silicon carbide by the hydrogen reduction of methyl trichlorine onto carbon substrates at 1500C. It is shown that alpha inclusions present are the rare 2H (Wurtzite) modification of silicon carbide and that their presence resulted from a vapor-liquid-solid growth mechanism which was dominated by impurities in the substrate. By carefully cleaning the substrate and purifying the methyltrichlorosilane, the alpha inclusions were eliminated. The 2H alpha crystals were then deliberately grown by introducing selected impurities locally on the substrate. Beta crystals were also intentionally grown by the vapor-liquid-solid technique by introducing appropriate impurities. Growth of beta silicon carbide from the melt is also briefly discussed. (Author).

Silicon Carbide, a High Temperature Semiconductor

Author : Joseph R. O'Connor
Publisher :
ISBN 13 :
Total Pages : 552 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Silicon Carbide, a High Temperature Semiconductor by : Joseph R. O'Connor

Download or read book Silicon Carbide, a High Temperature Semiconductor written by Joseph R. O'Connor and published by . This book was released on 1960 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:

On the Formation of Beta-SiC in the Initial Growth Stage

Author : Yoshizō Inomata
Publisher :
ISBN 13 :
Total Pages : 30 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis On the Formation of Beta-SiC in the Initial Growth Stage by : Yoshizō Inomata

Download or read book On the Formation of Beta-SiC in the Initial Growth Stage written by Yoshizō Inomata and published by . This book was released on 1972 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt: The formation of Beta-SiC at temperatures outside its thermally stable range of 1,400-1,600C was studied experimentally using the sublimation procedure and the synthetic method with molten silicon. From consideration of the molar surface energy of Beta- and alpha-SiC, the following are shown to be the main causes for the phenomenon: (1) Given an equal volume of crystallites, the molar surface energy of the Beta-type is always lower than that of the alpha-type based on its higher lattice symmetry; (2) the bonding energy of the Beta-type is the lowest among the SiC polytypes from comparison of the band gaps; (3) the rate of transition from the Beta- to the alpha-type is not too large. The free energy gaps among the SiC polytypes were found to be smaller than 100 cal/mole. The effects of pressure and polarity are also discussed.

The Growth of SiC Crystals from Vapor by the Bridgman-Stockbarger Method

Author : Juris Smiltens
Publisher :
ISBN 13 :
Total Pages : 40 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis The Growth of SiC Crystals from Vapor by the Bridgman-Stockbarger Method by : Juris Smiltens

Download or read book The Growth of SiC Crystals from Vapor by the Bridgman-Stockbarger Method written by Juris Smiltens and published by . This book was released on 1974 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt: From the dissociation curve (P vs. T), an equation for the rate of raising the pressure P of the binary vapor for obtaining the required linear growth rate of the crystal of c centimeters per hour is derived. It is shown that the rate is nearly proportional to P. Modifications of the furnace since the last report (Mat. Res. Bull. 4, S85, 1969) are described. Justification for the use of helium as the inert ambient gas is given. Two techniques are used: (1) growing with constant temperature of the crucible point and (2) growing with constant pressure of the sublimation bottle. To date, only polycrystalline boules consisting of large grains have been obtained. It is believed, however, that with certain technological improvements the methods that are developed here will ultimately yield single crystal boules. As a by-product, small cubic crystals, about one mm in the largest dimension, with good quality faces (cube and octahedron) have been obtained.

SiC Materials and Devices

Author :
Publisher : Academic Press
ISBN 13 : 0080864503
Total Pages : 435 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis SiC Materials and Devices by :

Download or read book SiC Materials and Devices written by and published by Academic Press. This book was released on 1998-07-02 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.

Properties of Silicon Carbide

Author : Gary Lynn Harris
Publisher : IET
ISBN 13 : 9780852968703
Total Pages : 312 pages
Book Rating : 4.9/5 (687 download)

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Book Synopsis Properties of Silicon Carbide by : Gary Lynn Harris

Download or read book Properties of Silicon Carbide written by Gary Lynn Harris and published by IET. This book was released on 1995 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: This well structured and fully indexed book helps to understand and fully characterize the SiC system.

Silicon Chemistry

Author : Peter Jutzi
Publisher : John Wiley & Sons
ISBN 13 : 3527611215
Total Pages : 506 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis Silicon Chemistry by : Peter Jutzi

Download or read book Silicon Chemistry written by Peter Jutzi and published by John Wiley & Sons. This book was released on 2007-09-24 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: The combined results from an international research project involving 40 interdisciplinary groups, providing the latest knowledge from the past few years. Adopting an application-oriented approach, this handy reference is a must-have for every silicon chemist, whether working in inorganic, organic, physical or polymer chemistry, materials science or physics.

Silicon Carbide, III-Nitrides and Related Materials

Author : Gerhard Pensl
Publisher : Trans Tech Publications Ltd
ISBN 13 : 3035705259
Total Pages : 1493 pages
Book Rating : 4.0/5 (357 download)

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Book Synopsis Silicon Carbide, III-Nitrides and Related Materials by : Gerhard Pensl

Download or read book Silicon Carbide, III-Nitrides and Related Materials written by Gerhard Pensl and published by Trans Tech Publications Ltd. This book was released on 1998-02-01 with total page 1493 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Stockholm, Sweden, September 1997