ESSDERC ’89

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Publisher : Springer
ISBN 13 :
Total Pages : 1004 pages
Book Rating : 4.:/5 (2 download)

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Book Synopsis ESSDERC ’89 by : Anton Heuberger

Download or read book ESSDERC ’89 written by Anton Heuberger and published by Springer. This book was released on 1989-09 with total page 1004 pages. Available in PDF, EPUB and Kindle. Book excerpt: The conference ESSDERC '89 held in September 1989 in Berlin was concerned with the physics, electrical characteristics, reliability and processing of solid state devices and electronic materials. The proceedings contain all invited and contributed papers of the conference and thus becomes a state-of-the-art-report of solid state device research in Europe 1989.

Esprit ’89

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Publisher : Springer Science & Business Media
ISBN 13 : 9400910630
Total Pages : 1136 pages
Book Rating : 4.4/5 (9 download)

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Book Synopsis Esprit ’89 by : CEC, DG for Telecommunications

Download or read book Esprit ’89 written by CEC, DG for Telecommunications and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 1136 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 6th ESPRIT Conference is being held in Brussels from the 27th November to the 1 st December 1989. Well over 1500 participants from all over Europe are expected to attend the various events during the week. The Conference will offer the opportunity to be updated on the results of ongoing Esprit projects and to develop Europe-wide contacts with colleagues, both within a specific branch of Information Technology and across different branches. The first three days of the week are devoted to presentations of Esprit I projects, structured into plenary and parallel sessions; this year there is special emphasis on panels and workshops where participants can exchange ideas and hold in-depth discussions on specific topics. The different areas of Esprit work are covered: Microelectronics, Informa tion Processing Systems, Office and Business Systems, Computer Integrated Manufac turing, Basic Research and different aspects of the Information Exchange System. During the IT Forum on Thursday 30th November, major European industrial and political decision-makers will address the audience in the morning. In the afternoon, different aspects of Technology Transfer will be discussed with the participation of outside experts, and presentations on the future plans for community R&D in IT will take place.

Device and Circuit Cryogenic Operation for Low Temperature Electronics

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Publisher : Springer Science & Business Media
ISBN 13 : 1475733186
Total Pages : 267 pages
Book Rating : 4.4/5 (757 download)

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Book Synopsis Device and Circuit Cryogenic Operation for Low Temperature Electronics by : Francis Balestra

Download or read book Device and Circuit Cryogenic Operation for Low Temperature Electronics written by Francis Balestra and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.

ESSDERC 88

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Publisher :
ISBN 13 :
Total Pages : 868 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis ESSDERC 88 by : Jean-Pierre Nougier

Download or read book ESSDERC 88 written by Jean-Pierre Nougier and published by . This book was released on 1988 with total page 868 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 1461384109
Total Pages : 413 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Semiconductors by : W.M. Jr. Coughran

Download or read book Semiconductors written by W.M. Jr. Coughran and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: This IMA Volume in Mathematics and its Applications SEMICONDUCTORS, PART II is based on the proceedings of the IMA summer program "Semiconductors." Our goal was to foster interaction in this interdisciplinary field which involves electrical engineers, computer scientists, semiconductor physicists and mathematicians, from both university and industry. In particular, the program was meant to encourage the participation of numerical and mathematical analysts with backgrounds in ordinary and partial differential equations, to help get them involved in the mathematical as pects of semiconductor models and circuits. We are grateful to W.M. Coughran, Jr., Julian Cole, Peter Lloyd, and Jacob White for helping Farouk Odeh organize this activity and trust that the proceedings will provide a fitting memorial to Farouk. We also take this opportunity to thank those agencies whose financial support made the program possible: the Air Force Office of Scientific Research, the Army Research Office, the National Science Foundation, and the Office of Naval Research. A vner Friedman Willard Miller, J r. Preface to Part II Semiconductor and integrated-circuit modeling are an important part of the high technology "chip" industry, whose high-performance, low-cost microprocessors and high-density memory designs form the basis for supercomputers, engineering work stations, laptop computers, and other modern information appliances. There are a variety of differential equation problems that must be solved to facilitate such mod eling.

Proceedings of the Fifth Symposium on Automated Integrated Circuits Manufacturing

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Publisher :
ISBN 13 :
Total Pages : 302 pages
Book Rating : 4.:/5 (2 download)

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Book Synopsis Proceedings of the Fifth Symposium on Automated Integrated Circuits Manufacturing by : Vaughn E. Akins

Download or read book Proceedings of the Fifth Symposium on Automated Integrated Circuits Manufacturing written by Vaughn E. Akins and published by . This book was released on 1990 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:

High Energy and High Dose Ion Implantation

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Publisher : Elsevier
ISBN 13 : 0444596798
Total Pages : 320 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis High Energy and High Dose Ion Implantation by : S.U. Campisano

Download or read book High Energy and High Dose Ion Implantation written by S.U. Campisano and published by Elsevier. This book was released on 1992-06-16 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion beam processing is a means of producing both novel materials and structures. The contributions in this volume strongly focus on this aspect and include many papers reporting on the modification of the electrical and structural properties of the target materials, both metals and semiconductors, as well as the synthesis of buried and surface compound layers. Many examples on the applications of high energy and high dose ion implantation are also given. All of the papers from Symposia C and D are presented in this single volume because the interests of many of the participants span both topics. Additionally many of the materials science aspects, including experimental methods, equipment and processing problems, diagnostic and analytical techniques are common to both symposia.

Proceedings of the ... Symposium on Automated Integrated Circuits Manufacturing

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Publisher :
ISBN 13 :
Total Pages : 304 pages
Book Rating : 4.0/5 ( download)

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Book Synopsis Proceedings of the ... Symposium on Automated Integrated Circuits Manufacturing by :

Download or read book Proceedings of the ... Symposium on Automated Integrated Circuits Manufacturing written by and published by . This book was released on 1990 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductor Laser Engineering, Reliability and Diagnostics

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Publisher : John Wiley & Sons
ISBN 13 : 1118481860
Total Pages : 522 pages
Book Rating : 4.1/5 (184 download)

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Book Synopsis Semiconductor Laser Engineering, Reliability and Diagnostics by : Peter W. Epperlein

Download or read book Semiconductor Laser Engineering, Reliability and Diagnostics written by Peter W. Epperlein and published by John Wiley & Sons. This book was released on 2013-01-25 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performance- and reliability-impacting factors such as temperature, stress and material instabilities. Further key features include: practical design guidelines that consider also reliability related effects, key laser robustness factors, basic laser fabrication and packaging issues; detailed discussion of diagnostic investigations of diode lasers, the fundamentals of the applied approaches and techniques, many of them pioneered by the author to be fit-for-purpose and novel in the application; systematic insight into laser degradation modes such as catastrophic optical damage, and a wide range of technologies to increase the optical strength of diode lasers; coverage of basic concepts and techniques of laser reliability engineering with details on a standard commercial high power laser reliability test program. Semiconductor Laser Engineering, Reliability and Diagnostics reflects the extensive expertise of the author in the diode laser field both as a top scientific researcher as well as a key developer of high-power highly reliable devices. With invaluable practical advice, this new reference book is suited to practising researchers in diode laser technologies, and to postgraduate engineering students.

Surface Processing and Laser Assisted Chemistry

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Publisher : Elsevier
ISBN 13 : 0444596682
Total Pages : 495 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Surface Processing and Laser Assisted Chemistry by : E. Fogarassy

Download or read book Surface Processing and Laser Assisted Chemistry written by E. Fogarassy and published by Elsevier. This book was released on 1990-12-01 with total page 495 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers in this volume cover all aspects of laser assisted surface processing ranging from the preparation of high-Tc superconducting layer structures to industrial laser applications for device fabrication. The topics presented give recent results in organometallic chemistry and laser photochemistry, and novel surface characterization techniques. The ability to control the surface morphology by digital deposition and etching shows one of the future directions for exciting applications of laser surface processing, some of which may apply UV and VUV excitation. The understanding of elementary proceses is essential for the design of novel deposition methods, with diamond CVD being an outstanding example. The high quality of these contributions once again demonstrates that the E-MRS is an efficient forum for interaction between research workers and industry.

Silicon-on-Insulator Technology

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Publisher : Springer Science & Business Media
ISBN 13 : 1475721218
Total Pages : 236 pages
Book Rating : 4.4/5 (757 download)

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Book Synopsis Silicon-on-Insulator Technology by : J.-P. Colinge

Download or read book Silicon-on-Insulator Technology written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: 5. 2. Distinction between thick- and thin-film devices . . . . . . . . . . . . . . . . . . . . 109 5. 3. I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 5. 3 . 2. Body effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 8 5. 3. 3. Short-channel effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 5. 3. 4. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 24 5. 4. Transconductance and mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 1 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 2. Mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5. 5. Subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 5. 6. Impact ionization and high-field effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 5. 6. 1. Kink effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 39 5. 6. 2. Hot-electron degradation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 5. 7. Parasitic bipolar effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 5. 7. 1. Anomalous subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 45 5. 7. 2. Reduced drain breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 5. 8. Accumulation-mode p-channel MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 CHAPTER 6 - Other SOl Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 9 6. 1. Non-conventional devices adapted from bulk . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6. 1. 1. COMFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 6. 1. 2. High-voltage lateral MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 6 1 6. 1. 3. PIN photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 6. 1. 4. JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 6. 2. Novel SOl devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 1. Lubistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 2. Bipolar-MOS device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166 6. 2. 3. Double-gate MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 69 6. 2. 4. Bipolar transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 6. 2. 5. Optical modulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 74 CHAPTER 7 - The sm MOSFET Operating in a Harsh Environment. . . . . . . . 1 77 7. 1. Radiation environment. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 7 7 7. 1. 1. SEU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178 7. 1. 2. Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 7. 1. 3. Dose-rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 8 4 7. 2. High-temperature operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 85 7. 2. 1. Leakage currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

ESSDERC'89

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Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (17 download)

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Book Synopsis ESSDERC'89 by :

Download or read book ESSDERC'89 written by and published by . This book was released on 1988 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Low-Temperature Technologies and Applications

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Publisher : BoD – Books on Demand
ISBN 13 : 1839685840
Total Pages : 146 pages
Book Rating : 4.8/5 (396 download)

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Book Synopsis Low-Temperature Technologies and Applications by : Md Salim Newaz Kazi

Download or read book Low-Temperature Technologies and Applications written by Md Salim Newaz Kazi and published by BoD – Books on Demand. This book was released on 2022-03-30 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book on low-temperature technology is a notable collection of different aspects of the technology and its application in varieties of research and practical engineering fields. It contains, sterilization and preservation techniques and their engineering and scientific characteristics. Ultra-low temperature refrigeration, the refrigerants, applications, and economic aspects are highlighted in this issue. The readers will find the low temperature, and vacuum systems for industrial applications. This book has given attention to global energy resources, conservation of energy, and alternative sources of energy for the application of low-temperature technologies.

Proceedings of the Second Symposium on Defects in Silicon

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Publisher :
ISBN 13 :
Total Pages : 716 pages
Book Rating : 4.:/5 (44 download)

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Book Synopsis Proceedings of the Second Symposium on Defects in Silicon by : W. Murray Bullis

Download or read book Proceedings of the Second Symposium on Defects in Silicon written by W. Murray Bullis and published by . This book was released on 1991 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Insulating Films on Semiconductors 1991, Proceedings from the 7th Biennial European Conference.

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Publisher : CRC Press
ISBN 13 : 9780750301688
Total Pages : 368 pages
Book Rating : 4.3/5 (16 download)

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Book Synopsis Insulating Films on Semiconductors 1991, Proceedings from the 7th Biennial European Conference. by : W. Eccleston

Download or read book Insulating Films on Semiconductors 1991, Proceedings from the 7th Biennial European Conference. written by W. Eccleston and published by CRC Press. This book was released on 1991-09-01 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: Insulating Films on Semiconductors 1991 covers the fundamental aspects of the properties of dielectrics/semiconductor structures, the study of high field/hot electron/radiation induced phenomena, and the developments in measurement techniques for looking at interfaces and surfaces on semiconductor materials. The volume is written for researchers in physics, materials science, electronics, and electrical engineering.

Characterization Methods for Submicron MOSFETs

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Publisher : Springer Science & Business Media
ISBN 13 : 1461313554
Total Pages : 240 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Characterization Methods for Submicron MOSFETs by : Hisham Haddara

Download or read book Characterization Methods for Submicron MOSFETs written by Hisham Haddara and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.

Design of System on a Chip

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Publisher : Springer Science & Business Media
ISBN 13 : 140207929X
Total Pages : 258 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Design of System on a Chip by : Ricardo Reis

Download or read book Design of System on a Chip written by Ricardo Reis and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Design of System on a Chip is the first of two volumes addressing the design challenges associated with new generations of the semiconductor technology. The various chapters are the compilations of tutorials presented at workshops in Brazil in the recent years by prominent authors from all over the world. In particular the first book deals with components and circuits. Device models have to satisfy the conditions to be computationally economical in addition to be accurate and to scale over various generations of technology. In addition the book addresses issues of the parasitic behavior of deep sub-micron components, such as parameter variations and sub-threshold effects. Furthermore various authors deal with items like mixed signal components and memories. We wind up with an exposition of the technology problems to be solved if our community wants to maintain the pace of the "International Technology Roadmap for Semiconductors" (ITRS).