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Epitaxial Growth Part A
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Book Synopsis Epitaxial Growth Part A by : J Matthews
Download or read book Epitaxial Growth Part A written by J Matthews and published by Elsevier. This book was released on 2012-12-02 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.
Book Synopsis Epitaxial Growth by : J. W. Matthews
Download or read book Epitaxial Growth written by J. W. Matthews and published by Elsevier. This book was released on 2013-10-22 with total page 315 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Growth Part B is the second part of a collection of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The topics discussed are the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The methods used to prepare and examine thin films are described and a list of the overgrowth-substrate combinations studied so far is given.
Book Synopsis Handbook of Crystal Growth by : Peter Rudolph
Download or read book Handbook of Crystal Growth written by Peter Rudolph and published by Elsevier. This book was released on 2014-11-04 with total page 1420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vol 2A: Basic TechnologiesHandbook of Crystal Growth, Second Edition Volume IIA (Basic Technologies) presents basic growth technologies and modern crystal cutting methods. Particularly, the methodical fundamentals and development of technology in the field of bulk crystallization on both industrial and research scales are explored. After an introductory chapter on the formation of minerals, ruling historically the basic crystal formation parameters, advanced basic technologies from melt, solution, and vapour being applied for research and production of the today most important materials, like silicon, semiconductor compounds and oxides are presented in detail. The interdisciplinary and general importance of crystal growth for human live are illustrated.Vol 2B: Growth Mechanisms and DynamicsHandbook of Crystal Growth, Second Edition Volume IIB (Growth Mechanisms and Dynamics) deals with characteristic mechanisms and dynamics accompanying each bulk crystal growth method discussed in Volume IIA. Before the atoms or molecules pass over from a position in the fluid medium (gas, melt or solution) to their place in the crystalline face they must be transported in the fluid over macroscopic distances by diffusion, buoyancy-driven convection, surface-tension-driven convection, and forced convection (rotation, acceleration, vibration, magnetic mixing). Further, the heat of fusion and the part carried by the species on their way to the crystal by conductive and convective transport must be dissipated in the solid phase by well-organized thermal conduction and radiation to maintain a stable propagating interface. Additionally, segregation and capillary phenomena play a decisional role for chemical composition and crystal shaping, respectively. Today, the increase of high-quality crystal yield, its size enlargement and reproducibility are imperative conditions to match the strong economy. Volume 2A Presents the status and future of Czochralski and float zone growth of dislocation-free silicon Examines directional solidification of silicon ingots for photovoltaics, vertical gradient freeze of GaAs, CdTe for HF electronics and IR imaging as well as antiferromagnetic compounds and super alloys for turbine blades Focuses on growth of dielectric and conducting oxide crystals for lasers and non-linear optics Topics on hydrothermal, flux and vapour phase growth of III-nitrides, silicon carbide and diamond are explored Volume 2B Explores capillarity control of the crystal shape at the growth from the melt Highlights modeling of heat and mass transport dynamics Discusses control of convective melt processes by magnetic fields and vibration measures Includes imperative information on the segregation phenomenon and validation of compositional homogeneity Examines crystal defect generation mechanisms and their controllability Illustrates proper automation modes for ensuring constant crystal growth process Exhibits fundamentals of solution growth, gel growth of protein crystals, growth of superconductor materials and mass crystallization for food and pharmaceutical industries
Book Synopsis Epitaxial Growth of Thin Films by : Daniel Rasic
Download or read book Epitaxial Growth of Thin Films written by Daniel Rasic and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial thin film heterostructures are critical for integrating multi-functionality on a chip and creating smart structures for next-generation solid-state devices. Here, we discuss the traditional lattice matching epitaxy (LME) for small lattice misfit and domain matching epitaxy (DME), which handles epitaxial growth across the misfit scale, where lattice misfit strain is predominant and can be relaxed completely, meaning that only the thermal and defect strains remain upon cooling. In low misfit systems, all three sources contribute to the residual strain upon cooling, as result of incomplete lattice relaxation. In the second part of the chapter, we will discuss the two critical contributors to the stress of the epitaxial film: the thermal coefficient of expansion mismatch and the lattice plane misfit. In the last part of the chapter, we will focus on unique cases where room temperature epitaxial growth is possible in nitride and oxide thin films.
Book Synopsis Crystal Growth for Beginners by : Ivan V. Markov
Download or read book Crystal Growth for Beginners written by Ivan V. Markov and published by World Scientific. This book was released on 2003 with total page 566 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first-ever textbook on the fundamentals of nucleation, crystal growth and epitaxy. It has been written from a unified point of view and is thus a non-eclectic presentation of this interdisciplinary topic in materials science. The reader is required to possess some basic knowledge of mathematics and physics. All formulae and equations are accompanied by examples that are of technological importance. The book presents not only the fundamentals but also the state of the art in the subject. The second revised edition includes two separate chapters dealing with the effect of the Enrich-Schwoebel barrier for down-step diffusion, as well as the effect of surface active species, on the morphology of the growing surfaces. In addition, many other chapters are updated accordingly. Thus, it serves as a valuable reference book for both graduate students and researchers in materials science.
Book Synopsis Epitaxial Growth Part by : J.W. Matthews
Download or read book Epitaxial Growth Part written by J.W. Matthews and published by . This book was released on with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxy written by Marian A. Herman and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 530 pages. Available in PDF, EPUB and Kindle. Book excerpt: In a uniform and comprehensive manner the authors describe all the important aspects of the epitaxial growth processes of solid films on crystalline substrates, e.g. processes in which atoms of the growing film mimic the arrangement of the atoms of the substrate. Emphasis is put on sufficiently fundamental and unequivocal presentation of the subject in the form of an easy-to-read review. A large part of this book focuses on the problems of heteroepitaxy. The most important epitaxial growth techniques which are currently widely used in basic research as well as in manufacturing processes of devices are presented and discussed in detail.
Book Synopsis Multiscale Modeling in Epitaxial Growth by : Axel Voigt
Download or read book Multiscale Modeling in Epitaxial Growth written by Axel Voigt and published by Springer Science & Business Media. This book was released on 2006-03-30 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxy is relevant for thin film growth and is a very active area of theoretical research since several years. Recently powerful numerical techniques have been used to link atomistic effects at the film's surface to its macroscopic morphology. This book also serves as an introduction into this highly active interdisciplinary field of research for applied mathematicians, theoretical physicists and computational materials scientists.
Book Synopsis Epitaxial Silicon Technology by : B Baliga
Download or read book Epitaxial Silicon Technology written by B Baliga and published by Elsevier. This book was released on 2012-12-02 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
Book Synopsis Epitaxial Crystal Growth by : E. Lendvay
Download or read book Epitaxial Crystal Growth written by E. Lendvay and published by Trans Tech Publications Ltd. This book was released on 1991-01-01 with total page 979 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the 1st International Conference on Epitaxial Crystal Growth, Budapest, Hungary, April 1990
Book Synopsis Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates by : K. Eberl
Download or read book Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates written by K. Eberl and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the NATO Advanced Research Workshop, Ringberg in Rottach Egern, Germany, February 20--24, 1995
Book Synopsis Morphological Organization In Epitaxial Growth And Removal by : Max G Lagally
Download or read book Morphological Organization In Epitaxial Growth And Removal written by Max G Lagally and published by World Scientific. This book was released on 1999-01-29 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a critical assessment of the current status and the likely future directions of thin-film growth, an area of exceptional technological importance. Its emphasis is on descriptions of the atomic-scale mechanisms controlling the dynamics and thermodynamics of the morphological evolution of the growth front of thin films in diverse systems of fundamental and technological significance. The book covers most of the original and important conceptual developments made in the 1990s. The articles, written by leading experts, are arranged in five major categories — the theoretical basis, semiconductor-on-semiconductor growth, metal-on-metal growth, metal-on-semiconductor growth, and removal as the inverse process of growth. This book, the only one of its kind in this decade, will prove to be an indispensable reference source for active researchers, those having peripheral interest, and graduate students starting out in the field.
Book Synopsis III-Nitride Electronic Devices by : Rongming Chu
Download or read book III-Nitride Electronic Devices written by Rongming Chu and published by Academic Press. This book was released on 2019-10 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field
Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Book Synopsis Handbook of Crystal Growth by : Peter Rudolph
Download or read book Handbook of Crystal Growth written by Peter Rudolph and published by . This book was released on 2015 with total page 1346 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Atomistic Aspects of Epitaxial Growth by : Miroslav Kotrla
Download or read book Atomistic Aspects of Epitaxial Growth written by Miroslav Kotrla and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring. The contributions to Atomistic Aspects of Epitaxial Growth are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field.
Book Synopsis Morphological Organization in Epitaxial Growth and Removal by : Zhenyu Zhang
Download or read book Morphological Organization in Epitaxial Growth and Removal written by Zhenyu Zhang and published by World Scientific. This book was released on 1998 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a critical assessment of the current status and the likely future directions of thin-film growth, an area of exceptional technological importance. Its emphasis is on descriptions of the atomic-scale mechanisms controlling the dynamics and thermodynamics of the morphological evolution of the growth front of thin films in diverse systems of fundamental and technological significance. The book covers most of the original and important conceptual developments made in the 1990s. The articles, written by leading experts, are arranged in five major categories ? the theoretical basis, semiconductor-on-semiconductor growth, metal-on-metal growth, metal-on-semiconductor growth, and removal as the inverse process of growth. This book, the only one of its kind in this decade, will prove to be an indispensable reference source for active researchers, those having peripheral interest, and graduate students starting out in the field.
