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Epitaxial Growth Of Ge On Si By Magnetron Sputtering
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Book Synopsis Epitaxial Growth of Ge on Si by Magnetron Sputtering by : Ziheng Liu
Download or read book Epitaxial Growth of Ge on Si by Magnetron Sputtering written by Ziheng Liu and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial growth of Ge on Si has received considerable attention for its compatibility with Si process flow and the scarcity of Ge compared with Si. Applications that drive the efforts for integrating Ge with Si include high mobility channel in metal-oxide-semiconductor field-effect transistors, infrared photodetector in Si-based optical devices, and template for III-V growth to fabricate high-efficiency solar cells. Epitaxy Ge on Si can be used as a virtual Ge substrate for fabrication of III-V solar cells, which has advantages of superior mechanical properties and low cost over Ge wafers. This work investigates the epitaxial growth of Ge on Si using magnetron sputtering, which is an environment-friendly, inexpensive, high throughput, and simple deposition technique. The effects of substrate temperature on the properties of Ge are analyzed. A novel method to epitaxially grow Ge on Si by magnetron sputtering at low temperature is developed using one-step aluminum-assisted crystallization. By applying an in-situ low temperature (50-150°C) heat treatment in between Al and Ge sputter depositions, the epitaxial growth of Ge on Si is achieved. This method significantly lowers the required temperature for and therefore the cost of epitaxial growth of Ge on Si.
Download or read book Epitaxy written by Miao Zhong and published by BoD – Books on Demand. This book was released on 2018-03-07 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: The edited volume "Epitaxy" is a collection of reviewed and relevant research chapters, offering a comprehensive overview of recent developments in the field of materials science. The book comprises single chapters authored by various researchers and edited by an expert active in this research area. All chapters are complete in themselves but are united under a common research study topic. This publication aims at providing a thorough overview of the latest research efforts by international authors in the field of materials science as well as opening new possible research paths for further developments.
Book Synopsis Heteroepitaxial Growth of Silicon and Germanium Thin Films on Flexible Metal Substrate by Magnetron Sputtering by : Renjie Wang
Download or read book Heteroepitaxial Growth of Silicon and Germanium Thin Films on Flexible Metal Substrate by Magnetron Sputtering written by Renjie Wang and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: High mobility single-crystalline-like Ge thin films have been demonstrated on inexpensive polycrystalline metallic substrates buffered with oxide buffer layer. Doped films of p-type and n-type were fabricated using radio frequency magnetron sputtering on flexible epitaxial templates produced by ion beam assisted deposition (IBAD). Ideal conditions for fabricating p-type and n-type Ge thin films have been optimized based on their structure and Hall mobility. As defect density in Ge is directly related to the CeO2 buffer, the effect of CeO2 layer thickness and quality has been evaluated. A structural design of a p-i-n junction is proposed for solar cells on our flexible substrate based on electrical and crystal properties of Si and Ge thin films fabricated. In order to achieve an efficient harvesting of photo-generated free carriers, fabrication of substrates terminated with epitaxial conductive layers is studied.
Book Synopsis Low Temperature Epitaxial Growth of Ge-C and Ge-Si-C Alloy Thin Films by : Bi-Ke Yang
Download or read book Low Temperature Epitaxial Growth of Ge-C and Ge-Si-C Alloy Thin Films written by Bi-Ke Yang and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis "Epitaxial growth of cerium dioxide on Si (1,0,0) by magnetron sputtering". by : François Ronin
Download or read book "Epitaxial growth of cerium dioxide on Si (1,0,0) by magnetron sputtering". written by François Ronin and published by . This book was released on 1988 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices by : John D. Cressler
Download or read book SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Book Synopsis Lateral Epitaxial Growth of Ge Films on Si Via a Vapor-liquid-solid Mechanism by : Weizhen Wang
Download or read book Lateral Epitaxial Growth of Ge Films on Si Via a Vapor-liquid-solid Mechanism written by Weizhen Wang and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: "In recent years, there has been an increasing interest in developing alternative semiconductor materials since traditional Si-based devices have approached their physical limits. Given that Si has many advantages over other materials as substrate, the use of Si wafer is expected to continue. It is therefore important to grow high-quality semiconductor materials, e.g., thin films or nanowires, epitaxially on Si. The past thirty years have seen rapid advances in the field of heteroepitaxial Ge growth on Si because Ge-based devices can add functionality to Si chips and may be the key to enable next-generation computer systems or solar cells. The direct growth of Ge on Si, however, suffers from high-density threading dislocations that are formed during the growth process; these defects act as scattering and recombination centers that degrade the device performance. In this thesis, a novel growth approach, metal-catalyzed, lateral epitaxial growth, is demonstrated to grow Ge films on Si with reduced threading dislocation density (TDD). In contrast to the traditional blanketed film growth on Si, this technique starts with a small crystal nucleation at a specific position on Si followed by a Ge lateral growth in the horizontal direction. It has been hypothesized that during the lateral growth process the lattice mismatch between Si and Ge can be accommodated by the extension of the preexisting misfit dislocations from the initial growth region or the nucleation of dislocations from the film sidewalls instead of generating additional threading dislocations from the film surface. In this thesis, SEM and TEM were two primary characterization techniques to study the film morphologies, the growth process, and the relaxation mechanisms. One important finding was that the first nucleation areas of the films often have a higher Si concentration or may be thinner compared to the lateral overgrowth areas. This is important because such differences made it possible to figure out where the first growth occurred in electron microscopy. From here we could compare the dislocation morphologies in different areas. In plan-view and cross-sectional TEM micrographs, high-density threading dislocations were found to be present in the initial growth areas while the lateral overgrowth areas demonstrated substantially reduced TDD or even defect-free areas. Moreover, the XRD results showed that the Ge films were almost fully relaxed with little Si incorporation. Given that the growth occurred at a low temperature, 375-500 °C, we suggest the presence of new relaxation mechanism since the previous mechanism, dislocation nucleation and glide, would require a much higher temperature to fully relax the lattice mismatch strain. Therefore, we hypothesize that the strain induced by the lattice mismatch can be relaxed by extending the preexisting misfit dislocations and that lateral growth can "build in" dislocations as it grows. Furthermore, this thesis proposes a simple model to describe the relation between the catalyst (Au) area and the area of the film in plan-view SEM; a film's size can thus be estimated by the size and shape of the Au catalyst. It has been found that a large Au catalyst can absorb more Ge due to its larger vapor-liquid interface, but more Ge is required to saturate the Au. This thesis also presents a study of the optimum growth condition of Ge lateral growth. The results show that high temperature and high GeH4 partial pressure can boost the growth rate and thus increase the film size within a specified period of time. However, high growth rate can cause more uncatalyzed, vapor-solid Ge growth on Si as well. A relatively lower growth rate and a longer growth time are thus required to simultaneously increase the size of the films and reduce the uncatalyzed growth." --
Book Synopsis High Mobility Single-crystalline-like Si and Ge Thin Films on Flexible Substrates by Roll-to-roll Vapor Deposition Processes by : Ying Gao
Download or read book High Mobility Single-crystalline-like Si and Ge Thin Films on Flexible Substrates by Roll-to-roll Vapor Deposition Processes written by Ying Gao and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The widespread use of high efficiency III–V multi-junction solar cells is limited by the cost and brittleness of Ge wafers that are used as templates for epitaxial growth. In order to provide an affordable and scalable bottom template, this work aims to achieve epitaxial growth of Ge and Si films on inexpensive and flexible substrates by roll-to-roll continuous deposition. These single-crystalline-like Si and Ge thin films on metal substrates can also be utilized in high mobility thin film transistors (TFTs) well beyond the realm of present-day TFTs based on amorphous Si and organic materials. The strategy of “seed and epitaxy” was employed for epitaxial growth of Ge and Si films. It consists of an initial growth of biaxially-textured seed layer on a flexible non-crystalline substrate by ion beam assisted deposition (IBAD) followed by a deposition of lattice and thermally-matched epitaxial layers. In epi-Ge growth, the epitaxial buffer stack of “CeO2/LaMnO3/MgO” was grown on IBAD MgO seed template by roll-to-roll magnetron sputtering. Single-crystalline-like Ge films was epitaxially grown on the CeO2-buffered templates by medium frequency magnetron sputtering or plasma enhanced chemical vapor deposition with carrier mobility values as high as 1100 cm2/V·s, which is about 1000 times higher than that of amorphous Ge. These epi-Ge templates were successfully utilized to grown n- or p-type single-crystalline GaAs thin films by metal organic chemical vapor deposition which have been used to fabricate solar cells. Moreover, the epi-Si thin films were also grown on this Ge template. The resulting n-type Si film is highly oriented along (004) direction with an electron mobility of 230 cm2/V-s. High performance TFTs fabricated on both single-crystalline-like n-Si channel on flexible metal substrate, and p-Ge on flexible glass substrate confirm the superior electronic quality of the grown films. The flexible TFT of n-Si (p-Ge) exhibits an on/off ratio of ~10E6 (10E6), a field-effect mobility of ~200 (105) cm2/V-s, and a threshold voltage of -0.7 (1.0) V. These devices with superior performance open up a new era toward the next-generation flexible electronics and optoelectronics.
Book Synopsis Epitaxial Growth of Si and Ge Mediated by Au Overlayers by : Glen David Wilk
Download or read book Epitaxial Growth of Si and Ge Mediated by Au Overlayers written by Glen David Wilk and published by . This book was released on 1995 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low-temperature Hetero-epitaxial Growth of Ge on Si by High Density Plasma Chemical Vapor Deposition by :
Download or read book Low-temperature Hetero-epitaxial Growth of Ge on Si by High Density Plasma Chemical Vapor Deposition written by and published by . This book was released on 2006 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Heterostructures on Silicon: One Step Further with Silicon by : Y. Nissim
Download or read book Heterostructures on Silicon: One Step Further with Silicon written by Y. Nissim and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10" e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C so that numerous metallurgical operations (oxydation, diffusion, annealing ... ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985.
Book Synopsis STM Study of Si-Ge Heterostructures Grown by Magnetron Sputter Epitaxy by : Bernhard Vögeli
Download or read book STM Study of Si-Ge Heterostructures Grown by Magnetron Sputter Epitaxy written by Bernhard Vögeli and published by . This book was released on 1998 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Epitaxial Growth of Ge on Si(100) Using Te as a Surfactant by :
Download or read book The Epitaxial Growth of Ge on Si(100) Using Te as a Surfactant written by and published by . This book was released on 1993 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial growth of Ge on Si using Te as a surfactant was studied with high resolution photoemission, low energy electron diffraction and cross-sectional transmission electron microscopy. The growth mode of Ge on Si changed from Stranski-Krastanov to layer-by-layer mode when 1/4 ML Te atoms were on the surface. During the growth, Te atoms segregated to the top of the surface. If the growth temperature is too high (above (approximately) 450C), the Te coverage was less than the necessary coverage to keep the layer by layer growth, and the growth mode of Ge on Si is still S-K.
Book Synopsis Epitaxial Growth of Relaxed Ge Buffers on (111) and (110) Si Substrates Using RP-CVD. by : Van H. Nguyen
Download or read book Epitaxial Growth of Relaxed Ge Buffers on (111) and (110) Si Substrates Using RP-CVD. written by Van H. Nguyen and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The continued scaling of Si metal oxide semiconductor field effect transistor (MOSFET) devices to enhance performance is reaching its fundamental limits and the need for new device architecture and/or new materials is driving research and development within the semiconductor industry. Germanium, with its much higher intrinsic carrier mobilities, has a considerable advantage over Si as a channel material and its compatibility with current complementary metal oxide semiconductor (CMOS) technology makes it a very promising candidate. There is currently significant technological interest in the epitaxial growth of high quality relaxed Ge layers directly on Si substrates for potential applications including: high-mobility metal-oxide-semiconductor field-effect-transistors (MOSFETs), infrared photodetectors, solar cells and III-V integration. The crystallographic orientation of the substrate also influences the inversion layer mobility in transistors; compared to (100) orientation, Ge grown on (111) and (110) substrates can considerably enhance the carrier mobilities for electrons and holes. The 4.2% mismatch between Ge and Si is, however, a major drawback for the growth of high quality epitaxial layers, as 3-dimensional islanding, surface roughening and the generation of a high density of defects can occur which are all detrimental to performance of prospective devices. In particular, epitaxial growth on (110) and (111) surfaces is more susceptible to the formation of extended stacking faults as the gliding sequence of the dissociated 30° and 90° partial dislocations is reversed with respect to that for the (100) surface. This means that the concept of a thick graded buffer for gradual strain relaxation is not as easily applicable in the case of (111) and (110) substrates. In this work, we have investigated the growth of relaxed Ge films on (111) and (110) Si substrates by reduced-pressure chemical vapour deposition (RP-CVD) in an ASM Epsilon 2000 reactor using the high temperature/ low temperature growth technique, which comprises of a thin low temperature (LT) Ge seed, a thick high temperature (HT) Ge layer and subsequent in-situ high temperature H2 anneal. We will show how the growth conditions influence both the presence and nature of defects within the Ge layers, their surface morphology and also the state of relaxation using transmission electron microscopy (TEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques. Formation of islands in the 10 nm Ge seed layer has led to a significant enhancement in the quality of the buffer by providing a effective way to relax the layers, reducing the densities of stacking faults and threading dislocations by at least a decade compared to previous studies and also producing a smooth surface around 2 nm rms.
Book Synopsis Limited-area Growth of Ge and SiGe on Si by : Meekyung Kim (Ph. D.)
Download or read book Limited-area Growth of Ge and SiGe on Si written by Meekyung Kim (Ph. D.) and published by . This book was released on 2011 with total page 159 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of this thesis is to develop and understand processing conditions that improve the surface morphology and reduce the dislocation density in limited-area heteroepitaxy of Ge and SiGe on Si (100) substrates. Low pressure chemical vapor deposition was investigated for two limiting cases of strain states: thin, strained, high Ge content SiGe films for transistor applications, and thick, relaxed Ge films, for potential optoelectronic applications. Selective epitaxial growth of thin, high Ge-content, strained SiGe on oxide-patterned silicon was studied, specifically the effect of growth area on the critical thickness. The critical thickness of Sio.33Geo.67 formed by selective epitaxial growth in areas of 2.3 x 2.3 [mu]m was found to be 8.5 nm, which is an increase of 2x compared to the critical thickness observed for growth in large areas (i.e. for non-selective epitaxy). The sources of misfit dislocation nucleation in selective growth were analyzed, and misfit generation from the SiGe pattern edges, due to effects such as local strain concentration, Si surface shape near the oxide boundary, and preferential SiGe growth near the pattern edge were investigated. Thin, smooth Ge-on-Si films were developed and the effect of growth conditions on film morphology was examined to find an optimum temperature and pressure for smooth film surface (365 °C and 60 torr). A period of delayed epitaxial growth, or "incubation time" was observed, and a Si surface treatment technique, consisting of a short SiGe pulse, with negligible SiGe thickness, was employed to realize uniform Ge films with low surface roughness (RMS
Book Synopsis Epitaxial Growth of Ge on In0.51Ga0.49P/GaAs (100) Substrate by Ultra-high Vacuum Chemical Vapor Deposition by :
Download or read book Epitaxial Growth of Ge on In0.51Ga0.49P/GaAs (100) Substrate by Ultra-high Vacuum Chemical Vapor Deposition written by and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of Epitaxial Ge on As-passivated (211)Si by Chemical Vapor Deposition for HgCdTe Based Infrared Detector Applications by : Shashidhar S. Shintri
Download or read book Growth and Characterization of Epitaxial Ge on As-passivated (211)Si by Chemical Vapor Deposition for HgCdTe Based Infrared Detector Applications written by Shashidhar S. Shintri and published by . This book was released on 2011 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:
