Electronic Structure of Semiconductor Surfaces, Clean and with Adsorbed Overlayers, Studied with Angle-resolved Photoemission

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ISBN 13 : 9789178701230
Total Pages : 60 pages
Book Rating : 4.7/5 (12 download)

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Book Synopsis Electronic Structure of Semiconductor Surfaces, Clean and with Adsorbed Overlayers, Studied with Angle-resolved Photoemission by : Per Mårtensson

Download or read book Electronic Structure of Semiconductor Surfaces, Clean and with Adsorbed Overlayers, Studied with Angle-resolved Photoemission written by Per Mårtensson and published by . This book was released on 1986 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electronis Structure of Semiconductor Surfaces, Clean and with Absorbed Overlayers, Studied with Angle-resolved Photoemission

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ISBN 13 : 9789178715923
Total Pages : 15 pages
Book Rating : 4.7/5 (159 download)

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Book Synopsis Electronis Structure of Semiconductor Surfaces, Clean and with Absorbed Overlayers, Studied with Angle-resolved Photoemission by :

Download or read book Electronis Structure of Semiconductor Surfaces, Clean and with Absorbed Overlayers, Studied with Angle-resolved Photoemission written by and published by . This book was released on 1986 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Studies of the Electronic Structure of Some Clean and As-covered Semiconductor Surfaces Using Angle-resolved Photoelectron Spectroscopy

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ISBN 13 : 9789170325526
Total Pages : 32 pages
Book Rating : 4.3/5 (255 download)

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Book Synopsis Studies of the Electronic Structure of Some Clean and As-covered Semiconductor Surfaces Using Angle-resolved Photoelectron Spectroscopy by : Hua Qu

Download or read book Studies of the Electronic Structure of Some Clean and As-covered Semiconductor Surfaces Using Angle-resolved Photoelectron Spectroscopy written by Hua Qu and published by . This book was released on 1991 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electronic Structure of the Clean and Hydrogen-chemisorbed Si(100)2x1 Surface Studied with Angle-resolved Photoemission

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ISBN 13 : 9789178704132
Total Pages : 82 pages
Book Rating : 4.7/5 (41 download)

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Book Synopsis Electronic Structure of the Clean and Hydrogen-chemisorbed Si(100)2x1 Surface Studied with Angle-resolved Photoemission by : Lars Johansson

Download or read book Electronic Structure of the Clean and Hydrogen-chemisorbed Si(100)2x1 Surface Studied with Angle-resolved Photoemission written by Lars Johansson and published by . This book was released on 1988 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Structural Studies of Clean Semiconductor Surfaces and Metal-semiconductor Interfaces by Photoemission Extended X-ray Absorption Fine Structure Spectroscopy

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Publisher :
ISBN 13 :
Total Pages : 272 pages
Book Rating : 4.:/5 (241 download)

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Book Synopsis Structural Studies of Clean Semiconductor Surfaces and Metal-semiconductor Interfaces by Photoemission Extended X-ray Absorption Fine Structure Spectroscopy by : Pawitterjit Singh Mangat

Download or read book Structural Studies of Clean Semiconductor Surfaces and Metal-semiconductor Interfaces by Photoemission Extended X-ray Absorption Fine Structure Spectroscopy written by Pawitterjit Singh Mangat and published by . This book was released on 1991 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Spectroscopic Studies of the Electronic Structure of Metal-Semiconductor and Vacuum-Semiconductor Interfaces

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Publisher :
ISBN 13 :
Total Pages : 37 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis Spectroscopic Studies of the Electronic Structure of Metal-Semiconductor and Vacuum-Semiconductor Interfaces by : Dean E. Eastman

Download or read book Spectroscopic Studies of the Electronic Structure of Metal-Semiconductor and Vacuum-Semiconductor Interfaces written by Dean E. Eastman and published by . This book was released on 1980 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt: The electronic structure and properties of semiconductor interfaces including both vacuum-semiconductor and metal-semiconductor interfaces as well as relevant metal and semiconductor materials have been investigated under this contract. The emphasis has been on elucidating the electronic properties of these materials and their interfaces, e.g., metal-semiconductor Schottky barriers, which are of far reaching importance in such semiconductor devices as MOSFETS, CCD devices, photovoltaic devices, etc. Extensive studies of the electronic structure of semiconductor surfaces and interfaces and related metal surfaces have been performed as a function of surface preparation (include laser annealing), doping, thickness of adsorbed overlayers, etc. The principle technique used has been photoelectron spectroscopy (XPS and UPS - with an emphasis on angle-resolved studies using synchrotron radiation and yield spectroscopy); other techniques include electron energy loss spectroscopy, low energy electron diffraction and theoretical band structure methods. Major achievements of our research program includes world-leading contributions to: (1) the electronic structure of cleaned and annealed Si(111) surfaces; (2) accurate experimental determinations of electron energy vs momentum band dispersions E(k) of selected materials (such E(K) dispersions are of central importance in solid state physics in understanding the electronic, physical and chemical properties of materials); and (3) the development and application of surface core level spectroscopy, a promising new photoemission technique.

Modern Techniques of Surface Science

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Publisher : Cambridge University Press
ISBN 13 : 9780521424981
Total Pages : 612 pages
Book Rating : 4.4/5 (249 download)

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Book Synopsis Modern Techniques of Surface Science by : D. P. Woodruff

Download or read book Modern Techniques of Surface Science written by D. P. Woodruff and published by Cambridge University Press. This book was released on 1994-03-03 with total page 612 pages. Available in PDF, EPUB and Kindle. Book excerpt: Revised and expanded second edition of the standard work on new techniques for studying solid surfaces.

Electronic Structure and Quantized Surface Electron Accumulation of Narrow Band Gap Semiconductors

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ISBN 13 :
Total Pages : 308 pages
Book Rating : 4.:/5 (69 download)

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Book Synopsis Electronic Structure and Quantized Surface Electron Accumulation of Narrow Band Gap Semiconductors by : Leyla Colakerol

Download or read book Electronic Structure and Quantized Surface Electron Accumulation of Narrow Band Gap Semiconductors written by Leyla Colakerol and published by . This book was released on 2009 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Narrow band gap semiconductors play a crucial role in thin film photovoltaic cells and optoelectronics devices operating in the infrared region of visible spectrum. The interactions between the valence and conduction bands due to the narrow band gap have a big influence on the electronic structure and the device performance of these materials. The surface and bulk electronic properties of narrow band gap semiconductors were investigated using angle resolved photoelectron spectroscopy (ARPES), x-ray absorption spectroscopy and x-ray emission spectroscopy. Comparisons were made between the experimental results and density functional theory band structure calculations. Intrinsic electron accumulation near the surface of clean InN was directly observed by ARPES. The accumulation layer is discussed in terms of the bulk Fermi level (E F) lying below the pinned surface E F, with a confining potential formed normal to surface due to the downward band bending facilitated by donor type surface states or nitrogen vacancies. Various spectroscopic techniques were used to measure this band bending. The energy of the Fermi level and the size of the Fermi surface for these quantum well states could be controlled by varying the method of surface preparation and by the adsorption of potassium on the surface. Intermixing between the heavy and light hole valence bands in the intrinsic quantum well potential associated with the surface electron accumulation layer results in an inverted band structure, with the valence band maximum lying away from the Brillouin zone center. Similarly, the electronic band structure of CdO was investigated and quantized electron subbands were observed above the valence band maximum. The origin of the accumulation layer is discussed in terms of the bulk band structure of CdO calculated using quasi particle corrected density functional theory. High electron density at the surface of these materials provides new opportunities for potential device structures such as sensors, high frequency transmitters and field effect transistors. Therefore the study of their near surface electron accumulation and electronic structure is of importance in understanding the properties of these materials and discovering new application areas.

Semiconductor Surfaces and Interfaces

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ISBN 13 :
Total Pages : 484 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Semiconductor Surfaces and Interfaces by : Friedhelm Bechstedt

Download or read book Semiconductor Surfaces and Interfaces written by Friedhelm Bechstedt and published by . This book was released on 1988 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Study of the Electronic Surface States of III-V Compounds and Silicon

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ISBN 13 :
Total Pages : 158 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis Study of the Electronic Surface States of III-V Compounds and Silicon by : W. E. Spicer

Download or read book Study of the Electronic Surface States of III-V Compounds and Silicon written by W. E. Spicer and published by . This book was released on 1982 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work performed over the four year span of this contract comprises a large body of research. Its results are summarized in this document. The technical problem was to study the electronic and atomic structure of the surfaces of several semiconductors. The III-V compound semiconductors, especially GaAs, InP, and GaSb, and the column IV semiconductor Si were emphasized, but some work on GE and HgCdTe was also performed. The predominant methodology used was laboratory experimentation: photoemission spectroscopy excited by synchrotron radiation was utilized heavily, along with angle-resolved photoemission, photoemission excited by conventional ultraviolet and x-ray illumination, low energy electron diffraction, Auger electron spectroscopy, contact potential difference (Kelvin probe) measurements, as well as other techniques which are detailed in the publications.

Surface and Interface Studies of Organic Semiconductors

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ISBN 13 :
Total Pages : 574 pages
Book Rating : 4.:/5 (66 download)

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Book Synopsis Surface and Interface Studies of Organic Semiconductors by : Huanjun Ding

Download or read book Surface and Interface Studies of Organic Semiconductors written by Huanjun Ding and published by . This book was released on 2010 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt: "In recent decades, research and development of organic based semiconductor devices have attracted intense interest. One of the most essential elements is the understanding of the electronic structures at various interfaces involved in these devices, as the interface properties control many of the critical electronic processes. However, the conventional theories developed for inorganic semiconductors are often adopted without further experimental confirmation in the design of innovative organic electronic devices. It is, thus, necessary to study the electronic properties of organic semiconductors with surface analytical tools, in order to improve our understanding of the fundamental mechanism involved in the interface formation. This thesis covers experimental investigations on some of the most interesting topics raised in the recent development of organic electronic devices. The intent of this thesis is to reveal the physical processes at the interface and their contributions to the device performance with photoemission and inverse photoemission investigations on the evolution of the occupied and unoccupied electronic structures. The topics include alkali metal doping, insertion layers, spin injection and organic single crystal studies. The electronic structure modification induced by alkali metal doping in tris-(8-hydroxyquinoline) aluminum (Alq) and copper phthalocyanine (CuPc) will be discussed. Based on the experimental observations, I propose a two-stage model to describe the doping effect in organic materials, which differs significantly from the classical theories used for inorganic semiconductors. I investigate the electronic structure of a number of insertion layers used in organic electronic devices, and the mechanisms of the induced performance improvement are discussed based on the observed interface properties. Next, I examine the spin injection and dynamics for organic thin films. Efficient spin injection for the hot electrons across the interface is demonstrated with spin and time-resolved two photon photoemission (STR-2PPE). Finally, I describe my studies about a particularly interesting organic material -- rubrene. The band structure measurement of rubrene single crystal samples is presented with angle-resolved photoemission spectroscopy (AR-PES). The energy level alignment at the interfaces between the rubrene thin film and various metal substrates and the morphology of the amorphous films prepared under various growth conditions are also discussed"--leaves viii-ix.

Electronic Structure of Clean and Oxygen Covered Aluminium and Magnesium Surfaces Studied by Photoelectron Spectroscopy

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ISBN 13 : 9789173720281
Total Pages : 167 pages
Book Rating : 4.7/5 (22 download)

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Book Synopsis Electronic Structure of Clean and Oxygen Covered Aluminium and Magnesium Surfaces Studied by Photoelectron Spectroscopy by : S. Anders Flodström

Download or read book Electronic Structure of Clean and Oxygen Covered Aluminium and Magnesium Surfaces Studied by Photoelectron Spectroscopy written by S. Anders Flodström and published by . This book was released on 1975 with total page 167 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Surface Electronic Structure of Si(110)5x1, Si(111) 3x 3 - In and Ge(111)2x1 Studied with Angle Resolved Photoelectron Spectroscopy

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ISBN 13 : 9789173728942
Total Pages : pages
Book Rating : 4.7/5 (289 download)

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Book Synopsis Surface Electronic Structure of Si(110)5x1, Si(111) 3x 3 - In and Ge(111)2x1 Studied with Angle Resolved Photoelectron Spectroscopy by : Per Mårtensson

Download or read book Surface Electronic Structure of Si(110)5x1, Si(111) 3x 3 - In and Ge(111)2x1 Studied with Angle Resolved Photoelectron Spectroscopy written by Per Mårtensson and published by . This book was released on 1985 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Theoretical studies of structural and electronic properties of overlay semiconductor surfaces

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ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (142 download)

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Book Synopsis Theoretical studies of structural and electronic properties of overlay semiconductor surfaces by : Mehmet Cakmak

Download or read book Theoretical studies of structural and electronic properties of overlay semiconductor surfaces written by Mehmet Cakmak and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Physics at Surfaces

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Publisher : Cambridge University Press
ISBN 13 : 1316583260
Total Pages : 470 pages
Book Rating : 4.3/5 (165 download)

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Book Synopsis Physics at Surfaces by : Andrew Zangwill

Download or read book Physics at Surfaces written by Andrew Zangwill and published by Cambridge University Press. This book was released on 1988-03-24 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: Physics at Surfaces is a unique graduate-level introduction to the physics and chemical physics of solid surfaces, and atoms and molecules that interact with solid surfaces. A subject of keen scientific inquiry since the last century, surface physics emerged as an independent discipline only in the late 1960s as a result of the development of ultra-high vacuum technology and high speed digital computers. With these tools, reliable experimental measurements and theoretical calculations could at last be compared. Progress in the last decade has been truly striking. This volume provides a synthesis of the entire field of surface physics from the perspective of a modern condensed matter physicist with a healthy interest in chemical physics. The exposition intertwines experiment and theory whenever possible, although there is little detailed discussion of technique. This much-needed text will be invaluable to graduate students and researchers in condensed matter physics, physical chemistry and materials science working in, or taking graduate courses in, surface science.

Metals Abstracts

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ISBN 13 :
Total Pages : 1162 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Metals Abstracts by :

Download or read book Metals Abstracts written by and published by . This book was released on 1980 with total page 1162 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Spectroscopy of Complex Oxide Interfaces

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Publisher : Springer
ISBN 13 : 3319749897
Total Pages : 326 pages
Book Rating : 4.3/5 (197 download)

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Book Synopsis Spectroscopy of Complex Oxide Interfaces by : Claudia Cancellieri

Download or read book Spectroscopy of Complex Oxide Interfaces written by Claudia Cancellieri and published by Springer. This book was released on 2018-04-09 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the most recent and compelling experimental results for complex oxide interfaces. The results of this book were obtained with the cutting-edge photoemission technique at highest energy resolution. Due to their fascinating properties for new-generation electronic devices and the challenge of investigating buried regions, the book chiefly focuses on complex oxide interfaces. The crucial feature of exploring buried interfaces is the use of soft X-ray angle-resolved photoemission spectroscopy (ARPES) operating on the energy range of a few hundred eV to increase the photoelectron mean free path, enabling the photons to penetrate through the top layers – in contrast to conventional ultraviolet (UV)-ARPES techniques. The results presented here, achieved by different research groups around the world, are summarized in a clearly structured way and discussed in comparison with other photoemission spectroscopy techniques and other oxide materials. They are complemented and supported by the most recent theoretical calculations as well as results of complementary experimental techniques including electron transport and inelastic resonant X-ray scattering.