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ISBN 13 :
Total Pages : 278 pages
Book Rating : 4.:/5 (931 download)
Download or read book Electron Microscopy of Defects in Ultra-wide Band Gap Nitrides written by and published by . This book was released on 2005 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : A. Hangleiter
Publisher :
ISBN 13 :
Total Pages : 440 pages
Book Rating : 4.3/5 (91 download)
Download or read book Nitrides and Related Wide Band Gap Materials written by A. Hangleiter and published by . This book was released on 1999-08-19 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Symposium on 'Nitrides and related wide band gap materials' at the 1998 Spring Meeting of the European Materials Research Society (E-MRS) in Strasbourg, France, was the third Symposium of its kind at an E-MRS meeting. Beginning in 1996, these Symposia enjoyed a steadily increasing popularity among European and international nitride researchers. Contributions covered the areas of hetero-epitaxy, bulk growth, structural, electrical and optical characterisation and device fabrication. Researchers from about 20 different countries presented their work at this symposium. Naturally, most papers were from within Europe (Germany, France, Russia and the United Kingdom) but there was also a remarkable number of contributions from overseas (USA, Japan and Korea.) For about 5 years now, semiconducting group-III nitrides have attracted an enormous level of research activity all over the world. Essentially this was triggered by the breakthroughs achieved by Shuji Nakamura and his group in Japan, who succeeded in making highly efficient blue, green and yellow light emitting diodes as well as violet laser diodes based on A1GaInN. Since then, intensive research related to material growth, device development, as well as to the fundamental properties of these materials is being carried out. The outstanding contribution of Shuji Nakamura to this field was underlined by his plenary lecture during this E-MRS meeting. He presented his most recent progress towards amber LED's and long-lived violet laser diodes.
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ISBN 13 :
Total Pages : 6 pages
Book Rating : 4.:/5 (713 download)
Download or read book First-Principles Investigations of Defects and Surfaces and Their Impact on Nitride Devices written by and published by . This book was released on 2010 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project was aimed at elucidating the electronic structure of nitride semiconductor surfaces, defects, and impurities through first-principles calculations. Density functional theory is the standard approach, but in its routine implementation it has major deficiencies because the band gap of semiconductors is severely underestimated. A new approach based on "hybrid functionals" was used to overcome this problem. Two main topics were pursued. (1) Behavior of fluorine in nitride semiconductors. A through understanding of the behavior of interstitial flooring were developed. It was proposed that flouring deceptors may be useful for p-type doping of wide-band-gap semiconductors. (2) Effects of surfaces on the two-dimensional electron gas. It was determined that oxidized surfac3es, which represent the realistic condition of the surface are most relevant.
Author : Karen Andre Mkhoyan
Publisher :
ISBN 13 :
Total Pages : 420 pages
Book Rating : 4.E/5 ( download)
Download or read book Scanning Transmission Electron Microscopy Study of III-V Nitrides written by Karen Andre Mkhoyan and published by . This book was released on 2004 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Meiyong Liao
Publisher : Elsevier
ISBN 13 : 0128172568
Total Pages : 503 pages
Book Rating : 4.1/5 (281 download)
Download or read book Ultra-wide Bandgap Semiconductor Materials written by Meiyong Liao and published by Elsevier. This book was released on 2019-06-18 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
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ISBN 13 :
Total Pages : 398 pages
Book Rating : 4.F/5 ( download)
Download or read book Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards written by and published by . This book was released on 2009 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Masataka Higashiwaki
Publisher : Springer Nature
ISBN 13 : 3030371530
Total Pages : 768 pages
Book Rating : 4.0/5 (33 download)
Download or read book Gallium Oxide written by Masataka Higashiwaki and published by Springer Nature. This book was released on 2020-04-23 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.
Author : Mark Edward Little
Publisher :
ISBN 13 :
Total Pages : 260 pages
Book Rating : 4.:/5 (486 download)
Download or read book Growth and Characterization of Electronic and Optical Properties of Wide Band Gap Amorphous Nitride Alloys written by Mark Edward Little and published by . This book was released on 2001 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : C. J. Kiely
Publisher : CRC Press
ISBN 13 : 9780750305778
Total Pages : 1320 pages
Book Rating : 4.3/5 (57 download)
Download or read book Electron Microscopy and Analysis 1999 written by C. J. Kiely and published by CRC Press. This book was released on 1999-12-01 with total page 1320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron Microscopy and Analysis 1999 provides an overview of recent developments and outlines opportunities for future research in electron microscopy. The book presents the wide-ranging applications of these techniques in materials science, metallurgy, and surface science. It is an authoritative reference for academics and researchers working in materials science, instrumentation, electron optics, and condensed matter physics.
Author : Debdeep Jena
Publisher : Springer Science & Business Media
ISBN 13 : 0387368310
Total Pages : 523 pages
Book Rating : 4.3/5 (873 download)
Download or read book Polarization Effects in Semiconductors written by Debdeep Jena and published by Springer Science & Business Media. This book was released on 2008 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
Author : P. C. Chang
Publisher : The Electrochemical Society
ISBN 13 : 9781566774628
Total Pages : 500 pages
Book Rating : 4.7/5 (746 download)
Download or read book State-of-the-Art Program on Compound Semiconductors : (SOTAPOCS XLII) and Processes at the Compound-Semiconductor/Solution Interface written by P. C. Chang and published by The Electrochemical Society. This book was released on 2005 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yuji Zhao
Publisher : Elsevier
ISBN 13 : 0128228709
Total Pages : 480 pages
Book Rating : 4.1/5 (282 download)
Download or read book Ultrawide Bandgap Semiconductors written by Yuji Zhao and published by Elsevier. This book was released on 2021-08-17 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored. Contains the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization, as well as design and performance characterization of state-of-the-art UWBG materials, structures, and devices Presents an in-depth discussion on electronic, photonic, thermal, and quantum technologies based on UWBG materials
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ISBN 13 :
Total Pages : 528 pages
Book Rating : 4.:/5 (318 download)
Download or read book EPJ AP written by and published by . This book was released on 2004 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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Publisher : Academic Press
ISBN 13 : 0128019409
Total Pages : 458 pages
Book Rating : 4.1/5 (28 download)
Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors
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ISBN 13 :
Total Pages : 490 pages
Book Rating : 4.3/5 (129 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1993 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Antonio Facchetti
Publisher : John Wiley & Sons
ISBN 13 : 9780470710593
Total Pages : 470 pages
Book Rating : 4.7/5 (15 download)
Download or read book Transparent Electronics written by Antonio Facchetti and published by John Wiley & Sons. This book was released on 2010-03-25 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: The challenge for producing “invisible” electronic circuitry and opto-electronic devices is that the transistor materials must be transparent to visible light yet have good carrier mobilities. This requires a special class of materials having “contra-indicated properties” because from the band structure point of view, the combination of transparency and conductivity is contradictory. Structured to strike a balance between introductory and advanced topics, this monograph juxtaposes fundamental science and technology / application issues, and essential materials characteristics versus device architecture and practical applications. The first section is devoted to fundamental materials compositions and their properties, including transparent conducting oxides, transparent oxide semiconductors, p-type wide-band-gap semiconductors, and single-wall carbon nanotubes. The second section deals with transparent electronic devices including thin-film transistors, photovoltaic cells, integrated electronic circuits, displays, sensors, solar cells, and electro-optic devices. Describing scientific fundamentals and recent breakthroughs such as the first “invisible” transistor, Transparent Electronics: From Synthesis to Applications brings together world renowned experts from both academia, national laboratories, and industry.
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ISBN 13 :
Total Pages : 2540 pages
Book Rating : 4.3/5 (91 download)
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
