Electron Induced Depassivation Of H And D Terminated Si Sio2 Interfaces

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Electron Induced Depassivation of H and D Terminated Si/SiO2 Interfaces

Author :
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ISBN 13 :
Total Pages : 8 pages
Book Rating : 4.:/5 (893 download)

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Download or read book Electron Induced Depassivation of H and D Terminated Si/SiO2 Interfaces written by and published by . This book was released on 1997 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: The authors have performed electron spin resonance and electrical measurements on SiO2/Si structures subjected to anneals in 5% H2/N2 or 5% D2/N2 gases and subsequently injected with electrons using corona ions and ultra-violet radiation. Threshold voltage and transconductance measurements have also been made on 0.25 [mu]m metal-oxide-semiconductor transistors subjected to 400 C anneals in the same gases and subsequently aged by hot electron injection. The electrical data on SiO2/Si structures indicates that the density of interface states increases as a result of electron injection but that there are only minor differences between H and D passivated interfaces. The data on P{sub b}, trivalent Si dangling bond, centers at the same interfaces observed by electron spin resonance is insufficiently accurate to enable them to observe any significant differences. The hot electron injection experiments on transistors, consistent with other authors, indicate that, for the limited number of measurements they have made, the transistor aging resulting from the generation of interface states is significantly reduced for devices annealed in the D containing gas as compared to those annealed in the H containing gas. The origins of some potential differences in annealing behavior between the SiO2/Si structures and the 0.25 [mu]m transistors are suggested.

Electron Induced Depassivation of H and D Terminated Si/SiO[sub 2] Interfaces

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (684 download)

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Download or read book Electron Induced Depassivation of H and D Terminated Si/SiO[sub 2] Interfaces written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The authors have performed electron spin resonance and electrical measurements on SiO[sub 2]/Si structures subjected to anneals in 5% H[sub 2]/N[sub 2] or 5% D[sub 2]/N[sub 2] gases and subsequently injected with electrons using corona ions and ultra-violet radiation. Threshold voltage and transconductance measurements have also been made on 0.25[micro]m metal-oxide-semiconductor transistors subjected to 400 C anneals in the same gases and subsequently aged by hot electron injection. The electrical data on SiO[sub 2]/Si structures indicates that the density of interface states increases as a result of electron injection but that there are only minor differences between H and D passivated interfaces. The data on P[sub b], trivalent Si dangling bond, centers at the same interfaces observed by electron spin resonance is insufficiently accurate to enable them to observe any significant differences. The hot electron injection experiments on transistors, consistent with other authors, indicate that, for the limited number of measurements they have made, the transistor aging resulting from the generation of interface states is significantly reduced for devices annealed in the D containing gas as compared to those annealed in the H containing gas. The origins of some potential differences in annealing behavior between the SiO[sub 2]/Si structures and the 0.25[micro]m transistors are suggested.

Amorphous and Crystalline Insulating Thin Films - 1996: Volume 446

Author : William L. Warren
Publisher :
ISBN 13 :
Total Pages : 464 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Amorphous and Crystalline Insulating Thin Films - 1996: Volume 446 by : William L. Warren

Download or read book Amorphous and Crystalline Insulating Thin Films - 1996: Volume 446 written by William L. Warren and published by . This book was released on 1997-06-30 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is devoted to the continuing research and development of thin-dielectric films for optical and microelectronic applications. Although thermal SiO2 has been the dominant dielectric for thin films in microelectronic applications for many years, there is a growing need for low-dielectric constant materials for interlevel dielectrics (less capacitive cross-talk and reduced delay) and high-dielectric constant materials to minimize the space and maximize the capacitance of storage devices such as DRAMs. With the demands put forth by the microelectronics community, this field is expected to develop significantly in the near future. Also featured is the growing area involving the structure and characteriza-tion of buried a-SiO2 layers formed by O+ ion implantation or the Smart Cut Unibond® process. These techniques are evolving into viable methods for producing commercial silicon-on-insulator substrates for device applications requiring radiation hardness, high-speed and low-power performance, and high-temperature operation.

Chemical Abstracts

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Publisher :
ISBN 13 :
Total Pages : 2540 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Other Emerging Diele[c]trics VIII

Author : Ram Ekwal Sah
Publisher : The Electrochemical Society
ISBN 13 : 9781566774598
Total Pages : 606 pages
Book Rating : 4.7/5 (745 download)

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Book Synopsis Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Other Emerging Diele[c]trics VIII by : Ram Ekwal Sah

Download or read book Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Other Emerging Diele[c]trics VIII written by Ram Ekwal Sah and published by The Electrochemical Society. This book was released on 2005 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Carbide Nanostructures

Author : Jiyang Fan
Publisher : Springer
ISBN 13 : 3319087266
Total Pages : 336 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Silicon Carbide Nanostructures by : Jiyang Fan

Download or read book Silicon Carbide Nanostructures written by Jiyang Fan and published by Springer. This book was released on 2014-07-26 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together the most up-to-date information on the fabrication techniques, properties, and potential applications of low dimensional silicon carbide (SiC) nanostructures such as nanocrystallites, nanowires, nanotubes, and nanostructured films. It also summarizes the tremendous achievements acquired during the past three decades involving structural, electronic, and optical properties of bulk silicon carbide crystals. SiC nanostructures exhibit a range of fascinating and industrially important properties, such as diverse polytypes, stability of interband and defect-related green to blue luminescence, inertness to chemical surroundings, and good biocompatibility. These properties have generated an increasing interest in the materials, which have great potential in a variety of applications across the fields of nanoelectronics, optoelectronics, electron field emission, sensing, quantum information, energy conversion and storage, biomedical engineering, and medicine. SiC is also a most promising substitute for silicon in high power, high temperature, and high frequency microelectronic devices. Recent breakthrough pertaining to the synthesis of ultra-high quality SiC single-crystals will bring the materials closer to real applications. Silicon Carbide Nanostructures: Fabrication, Structure, and Properties provides a unique reference book for researchers and graduate students in this emerging field. It is intended for materials scientists, physicists, chemists, and engineers in microelectronics, optoelectronics, and biomedical engineering.

Advanced Nanomaterials for Solar Cells and Light Emitting Diodes

Author : Feng Gao
Publisher : Elsevier
ISBN 13 : 0128136472
Total Pages : 550 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Advanced Nanomaterials for Solar Cells and Light Emitting Diodes by : Feng Gao

Download or read book Advanced Nanomaterials for Solar Cells and Light Emitting Diodes written by Feng Gao and published by Elsevier. This book was released on 2019-04-26 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Nanomaterials for Solar Cells and Light Emitting Diodes discusses the importance of nanomaterials as the active layers in solar cells and light emitting diodes (LEDs), along with the progress of nanomaterials as the electron and hole transporting layers. Specifically, the book reviews the use of nano-morphology of polymers, small molecules, and the organic-inorganic perovskites as the active layers in solar cells and LEDs. The design, fabrication and properties of metal-oxide-based nano-structures as electron and hole transporting layers are also reviewed. In addition, the development of plasmonic nanomaterials for solar cells and LEDs is discussed. Each topic in this book includes an overview of the materials system from principles to process. The advantages, disadvantages and related methodologies are highlighted. The book includes applications based on materials and emphasize how to improve the performance of solar cells and LEDs by the materials design, with a focus on nanomaterials. Provides latest research on nanostructured materials including small molecules, polymers, organic-inorganic perovskites, and many other relevant materials systems for solar cells and LEDs Addresses each promising materials system from principles to process, detailing the advantages and disadvantages of the most relevant methods of processing and fabrication Looks ahead to most likely techniques to improve performance of solar cells and light emitting diodes

Electrical & Electronics Abstracts

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Publisher :
ISBN 13 :
Total Pages : 1948 pages
Book Rating : 4.3/5 (243 download)

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Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1948 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Brilliant Light in Life and Material Sciences

Author : Vasili Tsakanov
Publisher : Springer Science & Business Media
ISBN 13 : 1402057245
Total Pages : 483 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Brilliant Light in Life and Material Sciences by : Vasili Tsakanov

Download or read book Brilliant Light in Life and Material Sciences written by Vasili Tsakanov and published by Springer Science & Business Media. This book was released on 2007-09-18 with total page 483 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains an excellent overview of the status and highlights of brilliant light facilities and their applications in biology, chemistry, medicine, materials and environmental sciences. Overview papers on diverse fields of research by leading experts are accompanied by the highlights in the near and long-term perspectives of brilliant X-Ray photon beam usage for fundamental and applied research.

Ionizing Radiation Effects in MOS Devices and Circuits

Author : T. P. Ma
Publisher : John Wiley & Sons
ISBN 13 : 9780471848936
Total Pages : 616 pages
Book Rating : 4.8/5 (489 download)

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Book Synopsis Ionizing Radiation Effects in MOS Devices and Circuits by : T. P. Ma

Download or read book Ionizing Radiation Effects in MOS Devices and Circuits written by T. P. Ma and published by John Wiley & Sons. This book was released on 1989-04-18 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.

Physics Briefs

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Publisher :
ISBN 13 :
Total Pages : 888 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 888 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Physics of Surfaces and Interfaces

Author : Harald Ibach
Publisher : Springer Science & Business Media
ISBN 13 : 3540347100
Total Pages : 653 pages
Book Rating : 4.5/5 (43 download)

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Book Synopsis Physics of Surfaces and Interfaces by : Harald Ibach

Download or read book Physics of Surfaces and Interfaces written by Harald Ibach and published by Springer Science & Business Media. This book was released on 2006-11-18 with total page 653 pages. Available in PDF, EPUB and Kindle. Book excerpt: This graduate-level textbook covers the major developments in surface sciences of recent decades, from experimental tricks and basic techniques to the latest experimental methods and theoretical understanding. It is unique in its attempt to treat the physics of surfaces, thin films and interfaces, surface chemistry, thermodynamics, statistical physics and the physics of the solid/electrolyte interface in an integral manner, rather than in separate compartments. It is designed as a handbook for the researcher as well as a study-text for graduate students. Written explanations are supported by 350 graphs and illustrations.

Proceedings of the 19th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces

Author : Thomas C. MacGill
Publisher :
ISBN 13 :
Total Pages : 450 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Proceedings of the 19th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces by : Thomas C. MacGill

Download or read book Proceedings of the 19th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces written by Thomas C. MacGill and published by . This book was released on 1992 with total page 450 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Activity report

Author : Brookhaven National Laboratory. National Synchrotron Light Source
Publisher :
ISBN 13 :
Total Pages : 244 pages
Book Rating : 4.:/5 (89 download)

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Book Synopsis Activity report by : Brookhaven National Laboratory. National Synchrotron Light Source

Download or read book Activity report written by Brookhaven National Laboratory. National Synchrotron Light Source and published by . This book was released on 2006 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Science Abstracts

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ISBN 13 :
Total Pages : 1990 pages
Book Rating : 4.3/5 (243 download)

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Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1990 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Internal Photoemission Spectroscopy

Author : Valeri V. Afanas'ev
Publisher : Elsevier
ISBN 13 : 0080999301
Total Pages : 404 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Internal Photoemission Spectroscopy by : Valeri V. Afanas'ev

Download or read book Internal Photoemission Spectroscopy written by Valeri V. Afanas'ev and published by Elsevier. This book was released on 2014-02-22 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well. Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. First complete model description of the internal photoemission phenomena Overview of the most reliable energy barrier determination procedures and trap characterization methods Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals

Atomic Layer Deposition for Semiconductors

Author : Cheol Seong Hwang
Publisher : Springer Science & Business Media
ISBN 13 : 146148054X
Total Pages : 266 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Atomic Layer Deposition for Semiconductors by : Cheol Seong Hwang

Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.