Guide to State-of-the-Art Electron Devices

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Publisher : John Wiley & Sons
ISBN 13 : 1118517539
Total Pages : 637 pages
Book Rating : 4.1/5 (185 download)

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Book Synopsis Guide to State-of-the-Art Electron Devices by : Joachim N. Burghartz

Download or read book Guide to State-of-the-Art Electron Devices written by Joachim N. Burghartz and published by John Wiley & Sons. This book was released on 2013-03-19 with total page 637 pages. Available in PDF, EPUB and Kindle. Book excerpt: Winner, 2013 PROSE Award, Engineering and Technology Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field. Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society Contributed by internationally respected members of the electron devices community A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered A valuable resource R&D managers; engineers in the semiconductor industry; applied scientists; circuit designers; Masters students in power electronics; and members of the IEEE Electron Device Society.

ESD

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Publisher : John Wiley & Sons
ISBN 13 : 0470012900
Total Pages : 420 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis ESD by : Steven H. Voldman

Download or read book ESD written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2005-12-13 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon. In addition it also addresses ESD in advanced CMOS with discussions on shallow trench isolation (STI), Copper and Low K materials. Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena. Analyses the behaviour of semiconductor devices under ESD conditions. Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits. Covers ESD testing, failure criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time. Discusses the design and development implications of ESD in semiconductor technologies. An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design. Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.

Handbook of Thin Film Deposition

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Author :
Publisher : William Andrew
ISBN 13 : 1437778747
Total Pages : 411 pages
Book Rating : 4.4/5 (377 download)

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Book Synopsis Handbook of Thin Film Deposition by : Krishna Seshan

Download or read book Handbook of Thin Film Deposition written by Krishna Seshan and published by William Andrew. This book was released on 2012-12-06 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Thin Film Deposition is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, new materials for memory applications and methods for thin film optical processes. In a major restructuring, this edition of the handbook lays the foundations with an up-to-date treatment of lithography, contamination and yield management, and reliability of thin films. The established physical and chemical deposition processes and technologies are then covered, the last section of the book being devoted to more recent technological developments such as microelectromechanical systems, photovoltaic applications, digital cameras, CCD arrays, and optical thin films. - A practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance and applications - Covers core processes and applications in the semiconductor industry and new developments in the photovoltaic and optical thin film industries - The new edition takes covers the transition taking place in the semiconductor world from Al/SiO2 to copper interconnects with low-k dielectrics - Written by acknowledged industry experts from key companies in the semiconductor industry including Intel and IBM - Foreword by Gordon E. Moore, co-founder of Intel and formulator of the renowned 'Moore's Law' relating to the technology development cycle in the semiconductor industry

The ESD Handbook

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Author :
Publisher : John Wiley & Sons
ISBN 13 : 1119233135
Total Pages : 1172 pages
Book Rating : 4.1/5 (192 download)

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Book Synopsis The ESD Handbook by : Steven H. Voldman

Download or read book The ESD Handbook written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2021-03-25 with total page 1172 pages. Available in PDF, EPUB and Kindle. Book excerpt: A practical and comprehensive reference that explores Electrostatic Discharge (ESD) in semiconductor components and electronic systems The ESD Handbook offers a comprehensive reference that explores topics relevant to ESD design in semiconductor components and explores ESD in various systems. Electrostatic discharge is a common problem in the semiconductor environment and this reference fills a gap in the literature by discussing ESD protection. Written by a noted expert on the topic, the text offers a topic-by-topic reference that includes illustrative figures, discussions, and drawings. The handbook covers a wide-range of topics including ESD in manufacturing (garments, wrist straps, and shoes); ESD Testing; ESD device physics; ESD semiconductor process effects; ESD failure mechanisms; ESD circuits in different technologies (CMOS, Bipolar, etc.); ESD circuit types (Pin, Power, Pin-to-Pin, etc.); and much more. In addition, the text includes a glossary, index, tables, illustrations, and a variety of case studies. Contains a well-organized reference that provides a quick review on a range of ESD topics Fills the gap in the current literature by providing information from purely scientific and physical aspects to practical applications Offers information in clear and accessible terms Written by the accomplished author of the popular ESD book series Written for technicians, operators, engineers, circuit designers, and failure analysis engineers, The ESD Handbook contains an accessible reference to ESD design and ESD systems.

Device Modeling for Analog and RF CMOS Circuit Design

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Author :
Publisher : John Wiley & Sons
ISBN 13 : 0470864346
Total Pages : 306 pages
Book Rating : 4.4/5 (78 download)

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Book Synopsis Device Modeling for Analog and RF CMOS Circuit Design by : Trond Ytterdal

Download or read book Device Modeling for Analog and RF CMOS Circuit Design written by Trond Ytterdal and published by John Wiley & Sons. This book was released on 2003-08-01 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bridges the gap between device modelling and analog circuit design. Includes dedicated software enabling actual circuit design. Covers the three significant models: BSIM3, Model 9 &, and EKV. Presents practical guidance on device development and circuit implementation. The authors offer a combination of extensive academic and industrial experience.

High Permittivity Gate Dielectric Materials

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 3642365353
Total Pages : 515 pages
Book Rating : 4.6/5 (423 download)

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Book Synopsis High Permittivity Gate Dielectric Materials by : Samares Kar

Download or read book High Permittivity Gate Dielectric Materials written by Samares Kar and published by Springer Science & Business Media. This book was released on 2013-06-25 with total page 515 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .

Advanced Microwave Circuits and Systems

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Author :
Publisher : BoD – Books on Demand
ISBN 13 : 9533070870
Total Pages : 502 pages
Book Rating : 4.5/5 (33 download)

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Book Synopsis Advanced Microwave Circuits and Systems by : Vitaliy Zhurbenko

Download or read book Advanced Microwave Circuits and Systems written by Vitaliy Zhurbenko and published by BoD – Books on Demand. This book was released on 2010-04-01 with total page 502 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is based on recent research work conducted by the authors dealing with the design and development of active and passive microwave components, integrated circuits and systems. It is divided into seven parts. In the first part comprising the first two chapters, alternative concepts and equations for multiport network analysis and characterization are provided. A thru-only de-embedding technique for accurate on-wafer characterization is introduced. The second part of the book corresponds to the analysis and design of ultra-wideband low- noise amplifiers (LNA).

Insulated Gate Bipolar Transistor IGBT Theory and Design

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Author :
Publisher : John Wiley & Sons
ISBN 13 : 047166099X
Total Pages : 648 pages
Book Rating : 4.4/5 (716 download)

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Book Synopsis Insulated Gate Bipolar Transistor IGBT Theory and Design by : Vinod Kumar Khanna

Download or read book Insulated Gate Bipolar Transistor IGBT Theory and Design written by Vinod Kumar Khanna and published by John Wiley & Sons. This book was released on 2004-04-05 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.

CMOS and Beyond

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Author :
Publisher : Cambridge University Press
ISBN 13 : 1316148025
Total Pages : 439 pages
Book Rating : 4.3/5 (161 download)

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Book Synopsis CMOS and Beyond by : Tsu-Jae King Liu

Download or read book CMOS and Beyond written by Tsu-Jae King Liu and published by Cambridge University Press. This book was released on 2015-02-05 with total page 439 pages. Available in PDF, EPUB and Kindle. Book excerpt: Get up to speed with the future of logic switch design with this indispensable overview of the most promising successors to modern CMOS transistors. Learn how to overcome existing design challenges using novel device concepts, presented using an in-depth, accessible, tutorial-style approach. Drawing on the expertise of leading researchers from both industry and academia, and including insightful contributions from the developers of many of these alternative logic devices, new concepts are introduced and discussed from a range of different viewpoints, covering all the necessary theoretical background and developmental context. Covering cutting-edge developments with the potential to overcome existing limitations on transistor performance, such as tunneling field-effect transistors (TFETs), alternative charge-based devices, spin-based devices, and more exotic approaches, this is essential reading for academic researchers, professional engineers, and graduate students working with semiconductor devices and technology.

Silicon-on-Insulator Technology: Materials to VLSI

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 1441991069
Total Pages : 375 pages
Book Rating : 4.4/5 (419 download)

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Book Synopsis Silicon-on-Insulator Technology: Materials to VLSI by : J.-P. Colinge

Download or read book Silicon-on-Insulator Technology: Materials to VLSI written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis.

Microlithography

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Publisher : CRC Press
ISBN 13 : 1351643444
Total Pages : 913 pages
Book Rating : 4.3/5 (516 download)

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Book Synopsis Microlithography by : Bruce W. Smith

Download or read book Microlithography written by Bruce W. Smith and published by CRC Press. This book was released on 2020-05-01 with total page 913 pages. Available in PDF, EPUB and Kindle. Book excerpt: The completely revised Third Edition to the bestselling Microlithography: Science and Technology provides a balanced treatment of theoretical and operational considerations, from fundamental principles to advanced topics of nanoscale lithography. The book is divided into chapters covering all important aspects related to the imaging, materials, and processes that have been necessary to drive semiconductor lithography toward nanometer-scale generations. Renowned experts from the world’s leading academic and industrial organizations have provided in-depth coverage of the technologies involved in optical, deep-ultraviolet (DUV), immersion, multiple patterning, extreme ultraviolet (EUV), maskless, nanoimprint, and directed self-assembly lithography, together with comprehensive descriptions of the advanced materials and processes involved. New in the Third Edition In addition to the full revision of existing chapters, this new Third Edition features coverage of the technologies that have emerged over the past several years, including multiple patterning lithography, design for manufacturing, design process technology co-optimization, maskless lithography, and directed self-assembly. New advances in lithography modeling are covered as well as fully updated information detailing the new technologies, systems, materials, and processes for optical UV, DUV, immersion, and EUV lithography. The Third Edition of Microlithography: Science and Technology authoritatively covers the science and engineering involved in the latest generations of microlithography and looks ahead to the future systems and technologies that will bring the next generations to fruition. Loaded with illustrations, equations, tables, and time-saving references to the most current technology, this book is the most comprehensive and reliable source for anyone, from student to seasoned professional, looking to better understand the complex world of microlithography science and technology.

75th Anniversary of the Transistor

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Publisher : John Wiley & Sons
ISBN 13 : 139420244X
Total Pages : 469 pages
Book Rating : 4.3/5 (942 download)

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Book Synopsis 75th Anniversary of the Transistor by : Arokia Nathan

Download or read book 75th Anniversary of the Transistor written by Arokia Nathan and published by John Wiley & Sons. This book was released on 2023-08-01 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: 75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.

Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 3709105978
Total Pages : 576 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by : Peter Pichler

Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Planar Double-Gate Transistor

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 1402093411
Total Pages : 215 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Planar Double-Gate Transistor by : Amara Amara

Download or read book Planar Double-Gate Transistor written by Amara Amara and published by Springer Science & Business Media. This book was released on 2009-01-16 with total page 215 pages. Available in PDF, EPUB and Kindle. Book excerpt: Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.

New Materials and Devices Enabling 5G Applications and Beyond

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Author :
Publisher : Elsevier
ISBN 13 : 0128234504
Total Pages : 369 pages
Book Rating : 4.1/5 (282 download)

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Book Synopsis New Materials and Devices Enabling 5G Applications and Beyond by : Nadine Collaert

Download or read book New Materials and Devices Enabling 5G Applications and Beyond written by Nadine Collaert and published by Elsevier. This book was released on 2024-01-24 with total page 369 pages. Available in PDF, EPUB and Kindle. Book excerpt: New Materials and Devices for 5G Applications and Beyond focuses on the materials, device architectures and enabling integration schemes for 5G applications and emerging technologies. It gives a comprehensive overview of the trade-offs, challenges and unique properties of novel upcoming technologies. Starting from the application side and its requirements, the book examines different technologies under consideration for the different functions, both more conventional to exploratory, and within this context the book provides guidance to the reader on how to possibly optimize the system for a particular application. This book aims at guiding the reader through the technologies required to enable 5G applications, with the main focus on mm-wave frequencies, up to THz. New Materials and Devises for 5G Applications and Beyond is suitable for industrial researchers and development engineers, and researchers in materials science, device engineering and circuit design. - Reviews challenges and emerging opportunities for materials, devices, and integration to enable 5G technologies - Includes discussion of technologies such as RF-MEMs, RF FINFETs, and transistors based on current and emerging materials (InP, GaN, etc.) - Focuses on mm-wave frequencies up to the terahertz regime

EDA for IC Implementation, Circuit Design, and Process Technology

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Author :
Publisher : CRC Press
ISBN 13 : 1351837583
Total Pages : 704 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis EDA for IC Implementation, Circuit Design, and Process Technology by : Luciano Lavagno

Download or read book EDA for IC Implementation, Circuit Design, and Process Technology written by Luciano Lavagno and published by CRC Press. This book was released on 2018-10-03 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presenting a comprehensive overview of the design automation algorithms, tools, and methodologies used to design integrated circuits, the Electronic Design Automation for Integrated Circuits Handbook is available in two volumes. The second volume, EDA for IC Implementation, Circuit Design, and Process Technology, thoroughly examines real-time logic to GDSII (a file format used to transfer data of semiconductor physical layout), analog/mixed signal design, physical verification, and technology CAD (TCAD). Chapters contributed by leading experts authoritatively discuss design for manufacturability at the nanoscale, power supply network design and analysis, design modeling, and much more. Save on the complete set.

Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond

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Author :
Publisher : Springer Nature
ISBN 13 : 9811500460
Total Pages : 127 pages
Book Rating : 4.8/5 (115 download)

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Book Synopsis Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond by : Guilei Wang

Download or read book Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond written by Guilei Wang and published by Springer Nature. This book was released on 2019-09-20 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.