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Electromigration In Cu Interconnects
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Book Synopsis Fundamentals of Electromigration-Aware Integrated Circuit Design by : Jens Lienig
Download or read book Fundamentals of Electromigration-Aware Integrated Circuit Design written by Jens Lienig and published by Springer. This book was released on 2018-02-23 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.
Book Synopsis Copper Interconnect Technology by : Tapan Gupta
Download or read book Copper Interconnect Technology written by Tapan Gupta and published by Springer Science & Business Media. This book was released on 2010-01-22 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.
Book Synopsis Electromigration in ULSI Interconnections by : Cher Ming Tan
Download or read book Electromigration in ULSI Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electro migration in integrated circuits. It is intended for both beginner and advanced readers on electro migration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electro migration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electro migration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electro migration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electro migration are presented in a concise and rigorous manner.Methods of numerical modeling for the interconnect electro migration and their applications to the understanding of electro migration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electro migration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electro migration are outlined and discussed.
Book Synopsis Electromigration in Cu Interconnects by : Dr. Arijit Roy
Download or read book Electromigration in Cu Interconnects written by Dr. Arijit Roy and published by LAP Lambert Academic Publishing. This book was released on 2011-07 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work is intended for the beginners and the advanced readers. Electromigration is VLSI/ULSI interconnection remains one of the major failure issues in microelectronics and electromigration remains an attractive research area in last few decades. This work attempts to explore the driving force formalism of the electromigration phenomenon.The prime interest of this work is to investigate the physics of failure in submicron (down to 100 nm wide) Cu interconnections including the effect of surrounding materials. A combined driving force model, including the forces from the stress and temperature gradients is presented. In order to develop the combined driving force model, commercial finite element analysis package is used. Plenty of experiments on Cu damascene interconnects are conducted, and extensive failure analyses are performed to investigate the root causes of electromigration failure. Good correlations between the model predictions and experiments are obtained. The future challenges on the study of electromigration are also discussed.
Book Synopsis Analysis of Electromigration in Single- and Dual-inlaid Cu Interconnects by : Patrick Ryan Justison
Download or read book Analysis of Electromigration in Single- and Dual-inlaid Cu Interconnects written by Patrick Ryan Justison and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis 2018 IEEE International Reliability Physics Symposium (IRPS) by : IEEE Staff
Download or read book 2018 IEEE International Reliability Physics Symposium (IRPS) written by IEEE Staff and published by . This book was released on 2018-03-11 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Reliability issues associated with semiconductors, foundries, IoT and other areas
Book Synopsis Graphene and VLSI Interconnects by : Cher-Ming Tan
Download or read book Graphene and VLSI Interconnects written by Cher-Ming Tan and published by CRC Press. This book was released on 2021-11-24 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt: Copper (Cu) has been used as an interconnection material in the semiconductor industry for years owing to its best balance of conductivity and performance. However, it is running out of steam as it is approaching its limits with respect to electrical performance and reliability. Graphene is a non-metal material, but it can help to improve electromigration (EM) performance of Cu because of its excellent properties. Combining graphene with Cu for very large-scale integration (VLSI) interconnects can be a viable solution. The incorporation of graphene into Cu allows the present Cu fabrication back-end process to remain unaltered, except for the small step of “inserting” graphene into Cu. Therefore, it has a great potential to revolutionize the VLSI integrated circuit (VLSI-IC) industry and appeal for further advancement of the semiconductor industry. This book is a compilation of comprehensive studies done on the properties of graphene and its synthesis methods suitable for applications of VLSI interconnects. It introduces the development of a new method to synthesize graphene, wherein it not only discusses the method to grow graphene over Cu but also allows the reader to know how to optimize graphene growth, using statistical design of experiments (DoE), on Cu interconnects in order to obtain good-quality and reliable interconnects. It provides a basic understanding of graphene–Cu interaction mechanism and evaluates the electrical and EM performance of graphenated Cu interconnects.
Book Synopsis Advanced Interconnects for ULSI Technology by : Mikhail Baklanov
Download or read book Advanced Interconnects for ULSI Technology written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2012-02-17 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
Book Synopsis Harsh Environment Electronics by : Ahmed Sharif
Download or read book Harsh Environment Electronics written by Ahmed Sharif and published by John Wiley & Sons. This book was released on 2019-08-05 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides in-depth knowledge on novel materials that make electronics work under high-temperature and high-pressure conditions This book reviews the state of the art in research and development of lead-free interconnect materials for electronic packaging technology. It identifies the technical barriers to the development and manufacture of high-temperature interconnect materials to investigate into the complexities introduced by harsh conditions. It teaches the techniques adopted and the possible alternatives of interconnect materials to cope with the impacts of extreme temperatures for implementing at industrial scale. The book also examines the application of nanomaterials, current trends within the topic area, and the potential environmental impacts of material usage. Written by world-renowned experts from academia and industry, Harsh Environment Electronics: Interconnect Materials and Performance Assessment covers interconnect materials based on silver, gold, and zinc alloys as well as advanced approaches utilizing polymers and nanomaterials in the first section. The second part is devoted to the performance assessment of the different interconnect materials and their respective environmental impact. -Takes a scientific approach to analyzing and addressing the issues related to interconnect materials involved in high temperature electronics -Reviews all relevant materials used in interconnect technology as well as alternative approaches otherwise neglected in other literature -Highlights emergent research and theoretical concepts in the implementation of different materials in soldering and die-attach applications -Covers wide-bandgap semiconductor device technologies for high temperature and harsh environment applications, transient liquid phase bonding, glass frit based die attach solution for harsh environment, and more -A pivotal reference for professionals, engineers, students, and researchers Harsh Environment Electronics: Interconnect Materials and Performance Assessment is aimed at materials scientists, electrical engineers, and semiconductor physicists, and treats this specialized topic with breadth and depth.
Download or read book אהל חי written by and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electromigration in Thin Films and Electronic Devices by : Choong-Un Kim
Download or read book Electromigration in Thin Films and Electronic Devices written by Choong-Un Kim and published by Elsevier. This book was released on 2011-08-28 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: Understanding and limiting electromigration in thin films is essential to the continued development of advanced copper interconnects for integrated circuits. Electromigration in thin films and electronic devices provides an up-to-date review of key topics in this commercially important area.Part one consists of three introductory chapters, covering modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation and x-ray microbeam studies of electromigration. Part two deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure. Finally, part three covers electromigration in solder, with chapters discussing topics such as electromigration-induced microstructural evolution and electromigration in flip-chip solder joints.With its distinguished editor and international team of contributors, Electromigration in thin films and electronic devices is an essential reference for materials scientists and engineers in the microelectronics, packaging and interconnects industries, as well as all those with an academic research interest in the field. Provides up-to-date coverage of the continued development of advanced copper interconnects for integrated circuits Comprehensively reviews modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation, and x-ray microbeam studies of electromigration Deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure
Book Synopsis Investigation of electromigration reliability in Al(Cu) interconnects by : Martin Gall
Download or read book Investigation of electromigration reliability in Al(Cu) interconnects written by Martin Gall and published by . This book was released on 1999 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Diffusion Phenomena in Thin Films and Microelectronic Materials by : Devendra Gupta
Download or read book Diffusion Phenomena in Thin Films and Microelectronic Materials written by Devendra Gupta and published by William Andrew. This book was released on 1988 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive review of diffusion phenomena in thin films and microelectronic materials -- theory and technology.
Book Synopsis Electromigration In Ulsi Interconnections by : Cher Ming Tan
Download or read book Electromigration In Ulsi Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010-06-25 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained.The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.
Book Synopsis Experimanetal Study of Electromigration in Nanometer Al and Al-Cu Interconnects by : Xun Pang
Download or read book Experimanetal Study of Electromigration in Nanometer Al and Al-Cu Interconnects written by Xun Pang and published by . This book was released on 2002 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Copper Interconnects, New Contact Metallurgies/structures, and Low-k Interlevel Dielectrics by :
Download or read book Copper Interconnects, New Contact Metallurgies/structures, and Low-k Interlevel Dielectrics written by and published by The Electrochemical Society. This book was released on 2003 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Statistical Analysis of Electromigration Lifetimes and Void Evolution in Cu Interconnects by : Meike Hauschildt
Download or read book Statistical Analysis of Electromigration Lifetimes and Void Evolution in Cu Interconnects written by Meike Hauschildt and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
