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Electrical Properties Of Hydrogen Related Defects In Crystalline Silicon
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Book Synopsis Properties of Crystalline Silicon by : Robert Hull
Download or read book Properties of Crystalline Silicon written by Robert Hull and published by IET. This book was released on 1999 with total page 1054 pages. Available in PDF, EPUB and Kindle. Book excerpt: A unique and well-organized reference, this book provides illuminating data, distinctive insight and expert guidance on silicon properties.
Book Synopsis Science and Technology of Defects in Silicon by : C.A.J. Ammerlaan
Download or read book Science and Technology of Defects in Silicon written by C.A.J. Ammerlaan and published by Elsevier. This book was released on 2014-01-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
Book Synopsis Defects in Microelectronic Materials and Devices by : Daniel M. Fleetwood
Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
Download or read book Hydrogen in Semiconductors II written by and published by Academic Press. This book was released on 1999-05-05 with total page 541 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. - Provides the most in-depth coverage of hydrogen in silicon available in a single source - Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors - Combines both experimental and theoretical studies to form a comprehensive reference
Book Synopsis Crystalline Silicon by : Sukumar Basu
Download or read book Crystalline Silicon written by Sukumar Basu and published by BoD – Books on Demand. This book was released on 2011-07-27 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: The exciting world of crystalline silicon is the source of the spectacular advancement of discrete electronic devices and solar cells. The exploitation of ever changing properties of crystalline silicon with dimensional transformation may indicate more innovative silicon based technologies in near future. For example, the discovery of nanocrystalline silicon has largely overcome the obstacles of using silicon as optoelectronic material. The further research and development is necessary to find out the treasures hidden within this material. The book presents different forms of silicon material, their preparation and properties. The modern techniques to study the surface and interface defect states, dislocations, and so on, in different crystalline forms have been highlighted in this book. This book presents basic and applied aspects of different crystalline forms of silicon in wide range of information from materials to devices.
Book Synopsis Dopants and Defects in Semiconductors by : Matthew D. McCluskey
Download or read book Dopants and Defects in Semiconductors written by Matthew D. McCluskey and published by CRC Press. This book was released on 2018-02-19 with total page 373 pages. Available in PDF, EPUB and Kindle. Book excerpt: Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ―Materials Today "... well written, with clear, lucid explanations ..." ―Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.
Book Synopsis Defects in Electronic Materials II: Volume 442 by : Jürgen Michel
Download or read book Defects in Electronic Materials II: Volume 442 written by Jürgen Michel and published by . This book was released on 1997-05-02 with total page 744 pages. Available in PDF, EPUB and Kindle. Book excerpt: The pervasive role of defects in determining the thermal, mechanical, electrical, optical and magnetic properties of materials is significant as is the knowledge and operation of generation and control of defects in electronic materials. Developing novel semiconductor materials, however, requires new insights into the role of defects to achieve new properties. New experimental techniques must be developed to study defects in small structures. Research groups come together in this book from MRS to provide a vivid picture of the current problems, progress and methods in defect studies in electronic materials. Topics include new techniques in defect studies; processing induced defects, plasma-induced point defects; processing induced defects -defects and gate-oxide integrity; point defects and reaction; point defects and interactions in Si; impurity diffusion and hydrogen in Si; dislocations in group IV semiconductors; point defects and defect interactions in SiGe; point defects in III-V compounds; compensation and structural defects in III-V compounds and layers and structures.
Book Synopsis Proceedings of the Third International Symposium on Defects in Silicon by : Takao Abe
Download or read book Proceedings of the Third International Symposium on Defects in Silicon written by Takao Abe and published by The Electrochemical Society. This book was released on 1999 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical characterization of transition metals in silicon: by : Leopold Scheffler
Download or read book Electrical characterization of transition metals in silicon: written by Leopold Scheffler and published by Cuvillier Verlag. This book was released on 2015-04-28 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silizium ist ein wichtiger Rohstoff unserer modernen Welt. Mikroelektronik, Sensorik und Photovoltaik sind drei wichtige Anwendungsgebiete, die aus unserem täglichen Leben heute nicht mehr wegzudenken sind. Entscheidend für all diese Anwendungen ist das Verständnis der elektrischen Eigenschaften des Materials, welche durch Defekte und Verunreinigungen beeinflusst werden. Die Übergangsmetalle sind eine wichtige Klasse von Verunreinigungen im Silizium, da sie die elektrischen Eigenschaften stark beeinflussen. Auch ist bekannt, dass Wasserstoff, welcher in vielen Prozessen in Silizium eindringen kann, mit vielen Defekten reagiert. In der vorliegenden Dissertation wird die Wechselwirkung von Wasserstoff mit den Metallen Titan, Kobalt und Nickel mit Hilfe der kapazitiven Messmethoden DLTS und MCTS untersucht. Verschiedene elektrisch aktive Metall-Wasserstoff-Komplexe können nachgewiesen werden. Auch eine Passivierung der Metalle durch Wasserstoff wird beobachtet. Neben den Reaktionen mit den Metallen wird auch eine Wechselwirkung des Wasserstoffs mit im Silizium vorhandenem Kohlenstoff untersucht. Für eine Einordnung der Ergebnisse werden diese mit dem aus der Literatur bekannten Verhalten benachbarter Elemente verglichen.
Book Synopsis Extended Defects in Semiconductors by : D. B. Holt
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Book Synopsis C, H, N and O in Si and Characterization and Simulation of Materials and Processes by : A. Borghesi
Download or read book C, H, N and O in Si and Characterization and Simulation of Materials and Processes written by A. Borghesi and published by Newnes. This book was released on 2012-12-02 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.
Book Synopsis Microelectronic Materials and Processes by : Roland Levy
Download or read book Microelectronic Materials and Processes written by Roland Levy and published by Springer Science & Business Media. This book was released on 1989-01-31 with total page 1006 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Shallow-level Centers In Semiconductors - Proceedings Of The 7th International Conference by : C A J Ammerlaan
Download or read book Shallow-level Centers In Semiconductors - Proceedings Of The 7th International Conference written by C A J Ammerlaan and published by World Scientific. This book was released on 1997-04-19 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is devoted to the specific physical and chemical properties of centers in semiconductors with shallow energy levels and electronic distributions of an extended size. Reports are included on the most advanced experimental and theoretical methods for identifying and further characterizing these materials. Attention is given to such topics as shallow-level centers in host semiconductors of lower dimensionality, centers in wide-bandgap semiconductors, shallow excited states of centers with deep ground states, passivation of centers, and other aspects of impurity control during crystal growth and processing with its relevance to applications.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1995 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Printed Organic and Molecular Electronics by : Daniel R. Gamota
Download or read book Printed Organic and Molecular Electronics written by Daniel R. Gamota and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt: Printed Organic And Molecular Electronics was compiled to create a reference that included existing knowledge from the most renowned industry, academic, and government experts in the fields of organic semiconductor technology, graphic arts printing, micro-contact printing, and molecular electronics. It is divided into sections that consist of the most critical topics required for one to develop a strong understanding of the states of these technologies and the paths for taking them from R&D to the hands of consumers on a massive scale. As such, the book provides both theory as well as technology development results and trends.
Book Synopsis Electronic Transport in Hydrogenated Amorphous Semiconductors by : Harald Overhof
Download or read book Electronic Transport in Hydrogenated Amorphous Semiconductors written by Harald Overhof and published by Springer. This book was released on 2006-04-11 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: Currently this is the book providing a thorough introduction and a unified theoretical basis for the interpretation of equilibrium transport processes in amorphous hydrogenated tetrahydrally coordinated semiconductors - a topic of great interest to physicists and material scientists (first devices for practical applications are already being manufactured). Most of the relevant literature is reviewed with particular emphasis on the approach developed by the authors. It explains most of the experimental data and allows the extraction of information about microscopic transport processes and parameters from equilibrium transport data. This work treats electronic transport in the mentioned type of semiconductors and in particular in a-Si:H and a-Ge:H. From elementary concepts the theory is developed towards higher degrees of completeness and sophistication. Further refinements for coping with the complexity of real systems are given. The comparison of theory with experiment is an important part of the book.
