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Electrical Detection Of Spin Transport In Silicon Two Dimensional Electron Gas Systems
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Book Synopsis Electrical Detection of Spin Transport in Silicon Two-Dimensional Electron Gas Systems by : Li-Te Chang
Download or read book Electrical Detection of Spin Transport in Silicon Two-Dimensional Electron Gas Systems written by Li-Te Chang and published by . This book was released on 2015 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrical detection of spin transport in a semiconductor (SC) channel is one of the key requirements to realize spintronics devices. Among various SC materials, the high-mobility two-dimensional electron gas (2DEG) confined in a modulation doped quantum well structure (MODQW) is of particular interest for device applications. This is because the high mobility promises for a long spin diffusion length of coherent transport as well as large spin signal for easy sensing. Meanwhile, the effective spin manipulation is achievable either by enhanced Rashba spin-orbit interaction from an asymmetric E-field structure, or by direct control of discrete density of states (DOS) within the quantum well structure. Despite of these merits, very few studies of direct electrical spin injection into 2DEG have been reported so far, mainly because of the difficulty in making reliable ferromagnetic (FM) contacts to the buried 2DEG channel. In literature, only a few reports in Si/SiO2 and III-V matrices are available up to now; however, electrical detection of spin transport in the high-mobility 2DEG in a Si/SiGe MODQW has not been reported. To make continuous progress of Si-based spintronics and to take full advantage of current CMOS technology, there is an urgent need to develop Si-based spintronics devices. In this thesis we present two related projects: first is spin injection in Ge; second is spin injection in Si two-dimensional electron gas (2DEG) system. It is the knowledge built up from the Ge project helps us successfully demonstrate electrical spin injection in Si 2DEG in a Si/SiGe MODQW using FM Mn-germanosilicide (Mn(Si0.7Ge0.3)x) end contacts, which is a new approach to circumvent the difficulty of etching process adopted for the typical spin valve devices. The experiments show that the spin-polarized electrons could be laterally injected into one side of the 2DEG confined at the Si/SiGe interface, and subsequently detected from the other side by the magnetoresistance (MR) of a FM/2DEG/FM spin valve. Most important of all, symmetric resistance steps were clearly observed from a series of FM/2DEG/FM spin valve devices with different channel lengths (Lch = 1.5~3.5 m), by which the spin diffusion length and spin lifetime are calculated to be 4.5 um and 16 ns at 1.9 K, respectively.
Book Synopsis Spintronics Handbook, Second Edition: Spin Transport and Magnetism by : Evgeny Y. Tsymbal
Download or read book Spintronics Handbook, Second Edition: Spin Transport and Magnetism written by Evgeny Y. Tsymbal and published by CRC Press. This book was released on 2019-05-20 with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.
Book Synopsis All Electrical Spin Detection in III-V Semiconductors by :
Download or read book All Electrical Spin Detection in III-V Semiconductors written by and published by . This book was released on 2007 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt: The project goal, to demonstrate electrical detection of electron spin transport in a semiconductor, has been met. We have achieved a clear spin-valve effect in an in-plane magnetic field and coherent precession and Hanle effect in a perpendicular magnetic field using a silicon spin transport device.
Book Synopsis Spintronics Handbook, Second Edition: Spin Transport and Magnetism by : Evgeny Y. Tsymbal
Download or read book Spintronics Handbook, Second Edition: Spin Transport and Magnetism written by Evgeny Y. Tsymbal and published by CRC Press. This book was released on 2019-05-20 with total page 530 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.
Book Synopsis Handbook of Spin Transport and Magnetism by : Evgeny Y. Tsymbal
Download or read book Handbook of Spin Transport and Magnetism written by Evgeny Y. Tsymbal and published by CRC Press. This book was released on 2016-04-19 with total page 797 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past several decades, the research on spin transport and magnetism has led to remarkable scientific and technological breakthroughs, including Albert Fert and Peter Grunberg's Nobel Prize-winning discovery of giant magnetoresistance (GMR) in magnetic metallic multilayers. Handbook of Spin Transport and Magnetism provides a comprehensive, bal
Book Synopsis Spin Dependent Transport in a Silicon Two-dimensional Electron Gas by : Ruby Nandini Ghosh
Download or read book Spin Dependent Transport in a Silicon Two-dimensional Electron Gas written by Ruby Nandini Ghosh and published by . This book was released on 1991 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Introduction to Spintronics by : Supriyo Bandyopadhyay
Download or read book Introduction to Spintronics written by Supriyo Bandyopadhyay and published by CRC Press. This book was released on 2015-09-18 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to Spintronics provides an accessible, organized, and progressive presentation of the quantum mechanical concept of spin and the technology of using it to store, process, and communicate information. Fully updated and expanded to 18 chapters, this Second Edition:Reflects the explosion of study in spin-related physics, addressing seven
Book Synopsis Spin Electronics by : David D. Awschalom
Download or read book Spin Electronics written by David D. Awschalom and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: The history of scientific research and technological development is replete with examples of breakthroughs that have advanced the frontiers of knowledge, but seldom does it record events that constitute paradigm shifts in broad areas of intellectual pursuit. One notable exception, however, is that of spin electronics (also called spintronics, magnetoelectronics or magnetronics), wherein information is carried by electron spin in addition to, or in place of, electron charge. It is now well established in scientific and engineering communities that Moore's Law, having been an excellent predictor of integrated circuit density and computer performance since the 1970s, now faces great challenges as the scale of electronic devices has been reduced to the level where quantum effects become significant factors in device operation. Electron spin is one such effect that offers the opportunity to continue the gains predicted by Moore's Law, by taking advantage of the confluence of magnetics and semiconductor electronics in the newly emerging discipline of spin electronics. From a fundamental viewpoine, spin-polarization transport in a material occurs when there is an imbalance of spin populations at the Fermi energy. In ferromagnetic metals this imbalance results from a shift in the energy states available to spin-up and spin-down electrons. In practical applications, a ferromagnetic metal may be used as a source of spin-polarized electronics to be injected into a semiconductor, a superconductor or a normal metal, or to tunnel through an insulating barrier.
Book Synopsis Spin-transport in Two-dimensional Electron and Hole Gases by : Tobias Dollinger
Download or read book Spin-transport in Two-dimensional Electron and Hole Gases written by Tobias Dollinger and published by Universitatsverlag Regensburg. This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation focuses on spin based phenomena of transport in low-dimensional mesoscopic systems. The work contains the theoretical discussion of an experimentally verified spin-transistor concept, which is based on controlling adiabaticity of spin evolution in dilute magnetic semiconductors. Furthermore the effect of spin dephasing on the weak localization and the weak antilocalization conductance corrections is investigated. In this context, the influence of spin-orbit interaction that scales cubically with the momentum on n- and p-type charge transport is examined. The analyses presented here are based on numerical transport simulations and semiclassical frameworks.
Book Synopsis Extrinsic Spin Relaxation in Silicon Spin Transport Devices by : Jing Li
Download or read book Extrinsic Spin Relaxation in Silicon Spin Transport Devices written by Jing Li and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon is one promising semiconductor material to realize spin-based devices and circuits, not only because of its entrenchment in present-day charge-based microelectronics industry, but also due to its exceptionally long electron spin lifetime. This intrinsic spin lifetime of conduction electrons in bulk silicon was estimated by Yafet's theory assuming that intravalley electron-acoustic phonon scattering is the dominant spin-flip mechanism at equilibrium, which agrees with experimental results from early electron spin resonance measurements and recent spin transport measurements using ballistic hot-electron injection and detection. This dissertation details experimental observations of substantial electron spin relaxation in silicon due to extrinsic effects which do not originate from intravalley electron-acoustic phonon scattering. Spin transport in high electric field demonstrates a field-induced spin relaxation by phonon emission process during which electrons are scattered between conduction band valleys that reside on different crystal axes. Charge and spin transport measurements below 25 K demonstrate the existence of anomalous spin relaxation which stems from electron spin exchange interaction with bulk neutral donor spin. Using a two-dimensional finite-difference modeling scheme, spin relaxation during lateral spin transport near Si/SiO 2 electrostatic gate interface is confirmed to be a result of enhanced momentum scattering and exchange coupling related to interfacial defects. These findings of extrinsic spin relaxation mechanisms are important to the design of spin-based semiconductor devices where the condition of equilibrium and the symmetry of bulk silicon lattice are necessarily broken.
Book Synopsis Comprehensive Semiconductor Science and Technology by :
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Download or read book Spin Current written by Sadamichi Maekawa and published by Oxford University Press. This book was released on 2017 with total page 541 pages. Available in PDF, EPUB and Kindle. Book excerpt: In a new branch of physics and technology, called spin-electronics or spintronics, the flow of electrical charge (usual current) as well as the flow of electron spin, the so-called "spin current", are manipulated and controlled together. This book is intended to provide an introduction and guide to the new physics and applications of spin current.
Book Synopsis Single-Atom Nanoelectronics by : Enrico Prati
Download or read book Single-Atom Nanoelectronics written by Enrico Prati and published by CRC Press. This book was released on 2016-04-19 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single-Atom Nanoelectronics covers the fabrication of single-atom devices and related technology, as well as the relevant electronic equipment and the intriguing new phenomena related to single-atom and single-electron effects in quantum devices. It also covers the alternative approaches related to both silicon- and carbon-based technologies, also
Book Synopsis Theory of Intrinsic Spin-dependent Transport in Semiconductors and Two-dimensional Membranes by : Yang Song
Download or read book Theory of Intrinsic Spin-dependent Transport in Semiconductors and Two-dimensional Membranes written by Yang Song and published by . This book was released on 2013 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt: "A reliable theoretical framework is developed for spin-dependent transport in the presence of electron-phonon interactions. The centerpiece of the theory explores the symmetry of the studied systems and processes. In addition, microscopic kinetic processes are incorporated. Rigorous numerical methods are employed in order to verify our predictions. Applying the theory to potential key semiconductors for spintronics, such as silicon and germanium, and to the nascent material family of two-dimensional membranes, one obtains physical clarity as well as explicit analytical results. Following the construction of electronic and phonon states, we derive spin-dependent electronphonon scattering matrix elements for all processes induced by acoustic or optical phonons (including transparent derivations of important two-phonon processes in two-dimensional membranes), intravalley or intervalley scattering for multivalley conduction bands, and interband scattering for the gapless graphene. The resulting expressions are explicit functions of electron wavevectors, spin orientation, phonon modes and valley positions. Using the acquired insights, remarkable physical consequences are discovered. These include optimal spin transport in Si by combining strain and geometrical constrains, extremely long room-temperature spin lifetime in strained Ge when the spin is oriented parallel to a [111] strain (~1 [mu]s), and ultrafast electron spin relaxation in single-layer transition-metal dichalcogenides. By the unique properties of two-dimensional membranes inherited from their mirror symmetry and out-of-plane softness, we notice decoupling between spin and momentum transport due to scattering with out-of-plane acoustic phonons (the most populous branch). By symmetry analysis of orbital configurations, contrasting spin splitting and spin flip constants are predicted for the conduction bands of various single-layer transition-metal dichalcogenides. In addition to transport phenomena, we also apply the theory to optical excitation of hot excitons. Incorporating microscopic spin-flip results into Boltzmann transport equations, one can explore spin communication applications. Apart from spin relaxation, spin injection and detection are also key phases. We study tunnel-barrier profiles that are complicated by doping inhomogeneity, and quantify the limitations on the applied bias due to detrimental spin relaxation of hot electrons in zinc-blende semiconductors. Importantly, we elaborate dynamic signals of high-frequency devices, and noncollinear magnetization configurations of the electrodes to discuss optimal information density"--Page vii-viii.
Book Synopsis Electrical Manipulation of Spin-orbit Coupling in Semiconductor Heterostructures by : Vanessa Sih
Download or read book Electrical Manipulation of Spin-orbit Coupling in Semiconductor Heterostructures written by Vanessa Sih and published by . This book was released on 2006 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum and provides a pathway for electrically initializing and manipulating electron spins. This coupling creates momentum-dependent spin-splittings related to the inversion asymmetries of the semiconductor heterostructure. We demonstrate that we can regulate these spin-splittings in bulk semiconductor epilayers with strain and in semiconductor heterostructures using quantum confinement and orbital quantization. Using spatially- and time-resolved optical spectroscopy, we can map these spin-splittings and observe their effects on the electron spin dynamics. In addition, we study electrically-generated spin polarization in bulk semiconductors and quantum wells. Measurements of the spin Hall effect in a two-dimensional electron gas confined in (110) AlGaAs quantum wells reveal a complex structure to the spin accumulation, which is in contrast to measurements on bulk epilayers. In addition, the current-induced spin polarization for the (110) quantum wells is oriented out-of-plane. The experiments map the strong dependence of the current-induced spin polarization to the crystal axis along which the electric field is applied, reflecting the anisotropy of the spin-orbit interaction. Finally, we have performed measurements of the spin Hall effect in structures patterned on GaAs epilayers that allow us to separate the effects of the sample boundary from the boundary of the electric field. These channels with transverse arms allow us to determine that the spin Hall effect produces a transverse bulk spin current and that this spin current can drive spin transport over macroscopic distances in bulk GaAs.
Book Synopsis Interactions Between Spin Transport and Dynamics Studied Using Spatially Resolved Imaging and Magnetic Resonance by : Michael Roy Page
Download or read book Interactions Between Spin Transport and Dynamics Studied Using Spatially Resolved Imaging and Magnetic Resonance written by Michael Roy Page and published by . This book was released on 2016 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this dissertation, I explore the interactions that occur between transported spins and magnetization dynamics using spatially resolved imaging and magnetic resonance. The integration of spin transport and dynamics will be a crucial aspect of realizing spintronic devices, which seek to improve upon current charge based electronics. Rather than focusing on the charge degree of freedom as in traditional electronics, spintronics seeks to utilize the properties of the electron spin degree of freedom to revolutionize the fundamental operating principles of data processing and storage devices. Spintronics promises greater functionality and energy efficiency in devices based on electron spin. However, improved understanding and control of the spin degree of freedom is required for spintronics to reach its full potential. The work in this dissertation represents efforts towards addressing these requirements. I discuss my work relating to the development of a custom scanned probe microscope allowing simultaneous spatially resolved imaging while imposing transport in electrically active spintronic devices. Using this microscope, I correlate the switching of magnetic electrodes in a graphene spin valve to the resistance states by directly imaging the electrode magnetization configuration while simultaneously measuring the non-local magnetoresistance. I investigate interactions between a ferromagnet driven into resonance and proximal nitrogen vacancy centers in diamond. Spinwaves generated during the decay of the uniform mode driven to ferromagnetic resonance relax the diamond nitrogen vacancy center spins resulting in a change in the fluorescence intensity. This technique allows the study of transport of angular momentum between two separated spin systems, as well as the possibility for the nanoscale imaging of magnetization dynamics. I demonstrate Heusler alloy ferromagnetic materials as high spin polarization spin injectors for device applications by studying their magnetoresistive output as a function of composition at room and low temperatures. Spin injection efficiency is another important aspect in the performance of spintronic devices, and optimization of spin injection will be of importance in creating realistic devices. Another promising avenue for spin injection relies on the spin Hall effect. I discuss efforts at using the spin Hall effect in platinum to inject spins into an aluminum channel to be detected in another platinum electrode by the inverse spin Hall effect without the need for a ferromagnet, thus reducing complications resulting from the stray field of typical ferromagnetic injectors. I discuss exploration of spin pumping devices based on metallic and insulating ferromagnet/graphene bilayers using ferromagnetic resonance and electrical detection of the inverse spin Hall effect. Spin pumping represents another opportunity to study interactions of spin transport and magnetization dynamics, in this case leveraged for efficient spin injection. Finally, I perform magnetic resonance measurements of thin film iron germanium skyrmionic candidate materials. Skrymions are a candidate for high density and low power magnetic recording. Measuring the dynamics of these materials will be important for a full characterization of their properties. I demonstrate detection of multiple magnetic phases in this material, and show evidence of large internal fields, which may be of interest in stabilizing skrymions in thin films.
Download or read book Low Temperature Spintronics written by and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis is based on two low temperature experiments in spintronics - physics and engineering of electronic spins. The measurements were performed on a GaAs/AlGaAs two-dimensional electron gas with geometries defined by tunable surface gates. The first experiment is about detection of electrons in a quantum dot. A quantum point contact (QPC) and a quantum wire (QW) is coupled to a single-lead few-electron quantum dot. By measuring the conductance of the QPC and the QW, one can gain information on the average number of electrons in the dot as well as energy-level structure of the dot. The second experiment investigates anisotropy of spin-orbit interaction in GaAs/AlGaAs heterostructure by measuring spin polarization in a narrow channel. Polarized electrons are injected into the channel through a spin-selective injector QPC and diffuse towards the end of the channel. This diffusion generates a pure spin current and the spin polarization 25 microns away is measured by a detector QPC. A periodic spin-orbit field induced by motion of the electrons in the channel causes the spins to resonate with external magnetic field. Spin-orbit anisotropy is demonstrated by the different resonance strength observed in channels aligned along two different crystal axes.
