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Author : Kirk Raphael Osborne
Publisher :
ISBN 13 :
Total Pages : 262 pages
Book Rating : 4.:/5 (3 download)
Download or read book Electrical Characterization of Beta Silicon Carbide written by Kirk Raphael Osborne and published by . This book was released on 1987 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Christopher Marcos Schnabel
Publisher :
ISBN 13 :
Total Pages : 202 pages
Book Rating : 4.:/5 (452 download)
Download or read book Optical and Electrical Characterization of Silicon Carbide written by Christopher Marcos Schnabel and published by . This book was released on 2000 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:
![Download Photoelectrochemical Etching of Beta Silicon Carbide ([beta]-SIC) and Its Characterization PDF Online Free](https://books.google.com/books/content/images/frontcover/FQ72tgAACAAJ?fife=w200-h370)
Author : Kern Anthony Dass
Publisher :
ISBN 13 :
Total Pages : 196 pages
Book Rating : 4.:/5 (42 download)
Download or read book Photoelectrochemical Etching of Beta Silicon Carbide ([beta]-SIC) and Its Characterization written by Kern Anthony Dass and published by . This book was released on 1996 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Stephen E. Lempner
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (315 download)
Download or read book Electrical Characterization of 6H Crystalline Silicon Carbide written by Stephen E. Lempner and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Nitya Nand Singh
Publisher :
ISBN 13 :
Total Pages : 360 pages
Book Rating : 4.:/5 (375 download)
Download or read book Electrical Characterization of Silicon Carbide Semiconductor and SiC-SiO2 Interfaces written by Nitya Nand Singh and published by . This book was released on 1997 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Christian P. Morath (2LT, USAF.)
Publisher :
ISBN 13 :
Total Pages : 292 pages
Book Rating : 4.:/5 (132 download)
Download or read book Electrical Characterization of Ion-implanted 4H-silicon Carbide written by Christian P. Morath (2LT, USAF.) and published by . This book was released on 1999 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Fredrik Allerstam
Publisher :
ISBN 13 : 9789173850889
Total Pages : 74 pages
Book Rating : 4.8/5 (58 download)
Download or read book Electrical Characterization of Thermally Oxidized Silicon Carbide written by Fredrik Allerstam and published by . This book was released on 2008 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Tomasz Śledziewski
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (17 download)
Download or read book Electrical Characterization of N-type 4H Silicon Carbide with Improved Material and Interface Properties Using Advanced Doping Techniques written by Tomasz Śledziewski and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Victor Homer Charles Watt
Publisher :
ISBN 13 :
Total Pages : 214 pages
Book Rating : 4.:/5 (299 download)
Download or read book Characterization of Beta Silicon Carbide and Nickel-gold Contact to Beta Silicon Carbide Using Auger Electron Spectroscopy and Contact Resistance Measurement written by Victor Homer Charles Watt and published by . This book was released on 1987 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Tsunenobu Kimoto
Publisher : John Wiley & Sons
ISBN 13 : 1118313550
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author : Konstantinos Zekentes
Publisher : Materials Research Forum LLC
ISBN 13 : 1945291842
Total Pages : 250 pages
Book Rating : 4.9/5 (452 download)
Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-25 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Author : Gary Lynn Harris
Publisher : IET
ISBN 13 : 9780852968703
Total Pages : 312 pages
Book Rating : 4.9/5 (687 download)
Download or read book Properties of Silicon Carbide written by Gary Lynn Harris and published by IET. This book was released on 1995 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: This well structured and fully indexed book helps to understand and fully characterize the SiC system.
Author : Richard Scott Kern
Publisher :
ISBN 13 :
Total Pages : 648 pages
Book Rating : 4.:/5 (349 download)
Download or read book Microstructural and Electrical Characterization of Silicon Carbide and Aluminum Nitride Thin Films Grown by Gas-source Molecular Beam Epitaxy written by Richard Scott Kern and published by . This book was released on 1996 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Rosario Gerhardt
Publisher : BoD – Books on Demand
ISBN 13 : 9533072016
Total Pages : 550 pages
Book Rating : 4.5/5 (33 download)
Download or read book Properties and Applications of Silicon Carbide written by Rosario Gerhardt and published by BoD – Books on Demand. This book was released on 2011-04-04 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, we explore an eclectic mix of articles that highlight some new potential applications of SiC and different ways to achieve specific properties. Some articles describe well-established processing methods, while others highlight phase equilibria or machining methods. A resurgence of interest in the structural arena is evident, while new ways to utilize the interesting electromagnetic properties of SiC continue to increase.
Author : Joseph J. Comer
Publisher :
ISBN 13 :
Total Pages : 30 pages
Book Rating : 4.3/5 (91 download)
Download or read book Electron Optical Studies of Heteroepitaxial Growth of Beta Silicon Carbide Layers Through Molten Metal Intermediates written by Joseph J. Comer and published by . This book was released on 1970 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt: Beta silicon carbide has the potential of becoming an important semiconductor device material for hazardous military environments such as high temperature and radiation. This report is concerned with a study of the growth of thin single crystal films of beta silicon carbide through molten metal intermediates. Thin films of nickel, cobalt, chromium and iron were deposited by vacuum deposition on to the (0001) faces of single crystals of alpha silicon carbide. Then heteroepitaxial layers of beta silicon carbide were deposited through the molten metal films by the hydrogen reduction of methyltrichlorosilane. The deposited films were studied by electron microscopy, electron diffraction and electron beam microprobe analysis to determine the growth mechanism and to arrive at optimum conditions for heteroepitaxial growth. From the results obtained it was concluded that nickel and cobalt were equally effective in promoting epitaxial growth. Films of nickel only 20A in thickness were as effective as those up to 300A. Results with chromium and iron were disappointing for different reasons. Chromium did not etch the substrate surface uniformly because of poor wetting. With iron, whisker growth of beta silicon carbide occurred at the surface. Although in many respects the growth of mechanism resembled that of the vapor-liquid-solid method, certain differences were observed which make the actual growth mechanism using nickel and cobalt films still uncertain. (Author).
Author : Kobchat Wongchotigul
Publisher :
ISBN 13 :
Total Pages : 224 pages
Book Rating : 4.:/5 (29 download)
Download or read book Fabrication and Characterization of Beta Silicon Carbide Discrete Devices and Integrated Circuit written by Kobchat Wongchotigul and published by . This book was released on 1992 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Christian Morath
Publisher :
ISBN 13 : 9781423546870
Total Pages : 166 pages
Book Rating : 4.5/5 (468 download)
Download or read book Electrical Characterization of Ion-Implanted 4H-Silicon Carbide written by Christian Morath and published by . This book was released on 1999-03-01 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrical characterization has been performed on ion-implanted p- type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantation/annealing scheme. Low doped (Na - Nd = 5x10(exp 15)/cu cm) epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1x10(exp 13) to 1x10(exp 14)/sq cm at room temperature or 500 deg. C. The electrical technique of Temperature Dependent Hall Effect (TDHE) indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of ^252 and ^285 meV, respectively. The highest activation efficiency for Al and B implanted samples was found to occur at anneal temperatures of ^1650 deg C and ^1550 deg C, respectively. The implantation dose resulting in the highest concentration for Al and B implantation was found to be 3x10(exp 13)/sq cm. An average peak mobility of ^200 sq cm/ V s was found for an Al implanted sample; this is considerably higher than the average peak mobility for the B implanted samples, ^100 sq cm/ V s. No significant gains in activation efficiency or mobility were evident with high temperature implantation compared to the room temperature implantation. Overall, Al implantation of 4H-SiC appears superior with regard to these properties compared to B implantation.
