Electrical And Optical Characterization Of Intrinsic And Ion Implantation Induced Defects In 6h And 4h Sic

Download Electrical And Optical Characterization Of Intrinsic And Ion Implantation Induced Defects In 6h And 4h Sic full books in PDF, epub, and Kindle. Read online Electrical And Optical Characterization Of Intrinsic And Ion Implantation Induced Defects In 6h And 4h Sic ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!

Electrical and Optical Characterization of Intrinsic and Ion- Implantation Induced Defects in 6H- And 4H-SiC

Download Electrical and Optical Characterization of Intrinsic and Ion- Implantation Induced Defects in 6H- And 4H-SiC PDF Online Free

Author : Michael B. Scott
Publisher :
ISBN 13 : 9781423541486
Total Pages : 257 pages
Book Rating : 4.5/5 (414 download)

Book Synopsis Electrical and Optical Characterization of Intrinsic and Ion- Implantation Induced Defects in 6H- And 4H-SiC by : Michael B. Scott

Download or read book Electrical and Optical Characterization of Intrinsic and Ion- Implantation Induced Defects in 6H- And 4H-SiC written by Michael B. Scott and published by . This book was released on 1999-11-01 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: Deep level transient spectroscopy (DLTS), Hall effect, and cathodolummescence (CL) measurements are used to characterize the intrinsic and ion-implantation induced defects in high-temperature (475 and 500 deg C) ion- implanted epitaxial n-type 6H- and 4H-SiC, ion-implanted with Cr, Mg, Ar, N, and P atoms. Comparison of room-temperature and high-temperature ion-implanted 6H- SiC:Mg and :Cr indicate the significance of high-temperature ion implantation on the activation of the ion-implanted atoms and damage-recovery of the crystalline lattice. The effects of high-temperature annealing on both damage-recovery and implanted ion activation are detected and analyzed, from 1200 to 1800 degrees C. Trap parameters 0 both damage-related and species-related defects are determined by curve-fitting of DLTS rate window plots, including the identification of a 615 meV silicon-vacancy-substitutional-nitrogen defect. Double-correlated DLTS measurements indicate a one-dimensional distribution of various defects along the implantation axis and slight surface diffusion of ion-implanted magnesium during high-temperature annealing. Current-voltage-temperature measurements of 6H-SiC:Mg :Cr indicate the effect of annealing temperature and ion species on the concentration of near midgap defects. Optimum anneal temperatures are determined for activation of ion-implanted nitrogen and phosphorus. CL measurements indicate the formation of deep radiative centers in 500 degrees C ion-implanted 4H-SiC:P and :N. CL measurements also indicate the presence of a 130 meV higher energy level conduction band minimum.

Silicon Carbide 2004 - Materials, Processing and Devices: Volume 815

Download Silicon Carbide 2004 - Materials, Processing and Devices: Volume 815 PDF Online Free

Author : Materials Research Society. Meeting
Publisher :
ISBN 13 :
Total Pages : 344 pages
Book Rating : 4.:/5 (318 download)

Book Synopsis Silicon Carbide 2004 - Materials, Processing and Devices: Volume 815 by : Materials Research Society. Meeting

Download or read book Silicon Carbide 2004 - Materials, Processing and Devices: Volume 815 written by Materials Research Society. Meeting and published by . This book was released on 2004-08-24 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Radiation Effects in Advanced Semiconductor Materials and Devices

Download Radiation Effects in Advanced Semiconductor Materials and Devices PDF Online Free

Author : C. Claeys
Publisher : Springer Science & Business Media
ISBN 13 : 3662049740
Total Pages : 424 pages
Book Rating : 4.6/5 (62 download)

Book Synopsis Radiation Effects in Advanced Semiconductor Materials and Devices by : C. Claeys

Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.

Dissertation Abstracts International

Download Dissertation Abstracts International PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 782 pages
Book Rating : 4.3/5 (91 download)

Book Synopsis Dissertation Abstracts International by :

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2003 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Carbide and Related Materials 1995, Proceedings of the Sixth INT Conference, Kyoto, Japan, 18-21 September 1995

Download Silicon Carbide and Related Materials 1995, Proceedings of the Sixth INT Conference, Kyoto, Japan, 18-21 September 1995 PDF Online Free

Author : Shin-ichi Nakashima
Publisher : CRC Press
ISBN 13 :
Total Pages : 1158 pages
Book Rating : 4.X/5 (4 download)

Book Synopsis Silicon Carbide and Related Materials 1995, Proceedings of the Sixth INT Conference, Kyoto, Japan, 18-21 September 1995 by : Shin-ichi Nakashima

Download or read book Silicon Carbide and Related Materials 1995, Proceedings of the Sixth INT Conference, Kyoto, Japan, 18-21 September 1995 written by Shin-ichi Nakashima and published by CRC Press. This book was released on 1996 with total page 1158 pages. Available in PDF, EPUB and Kindle. Book excerpt: The special advantages of silicon carbide and related materials such as III-V nitrides in applications in hostile environments and for blue-light-emitting diodes continue to stimulate research and development activity. The International Conference on Silicon Carbide and related Materials is now the established forum for exchanging information on advances in this subject. This volume includes both invited and contributed papers covering the whole field of silicon carbide and related materials research, from the fundamental physics of these materials, through their growth, control of properties, characterization, surface and interface modification, device processing and fabrication, to simulation and modelling. Materials scientists, electronic engineers and solid state physicists who work with these materials, as well as those who are contemplating research in this expanding field, will find this a unique single source of information.

Electrical Characterization of Ion Implanted 6H Silicon Carbide P-N Junctions

Download Electrical Characterization of Ion Implanted 6H Silicon Carbide P-N Junctions PDF Online Free

Author : Sharon E. Cole
Publisher :
ISBN 13 :
Total Pages : 234 pages
Book Rating : 4.:/5 (314 download)

Book Synopsis Electrical Characterization of Ion Implanted 6H Silicon Carbide P-N Junctions by : Sharon E. Cole

Download or read book Electrical Characterization of Ion Implanted 6H Silicon Carbide P-N Junctions written by Sharon E. Cole and published by . This book was released on 1994 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Diffusion and Defect Data

Download Diffusion and Defect Data PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 712 pages
Book Rating : 4.E/5 ( download)

Book Synopsis Diffusion and Defect Data by :

Download or read book Diffusion and Defect Data written by and published by . This book was released on 2004 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Carbide and Related Materials

Download Silicon Carbide and Related Materials PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 1160 pages
Book Rating : 4.:/5 (44 download)

Book Synopsis Silicon Carbide and Related Materials by :

Download or read book Silicon Carbide and Related Materials written by and published by . This book was released on 1996 with total page 1160 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Ion Implantation in Diamond, Graphite and Related Materials

Download Ion Implantation in Diamond, Graphite and Related Materials PDF Online Free

Author : M.S. Dresselhaus
Publisher : Springer Science & Business Media
ISBN 13 : 3642771718
Total Pages : 212 pages
Book Rating : 4.6/5 (427 download)

Book Synopsis Ion Implantation in Diamond, Graphite and Related Materials by : M.S. Dresselhaus

Download or read book Ion Implantation in Diamond, Graphite and Related Materials written by M.S. Dresselhaus and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbon has always been a unique and intriguing material from a funda mental standpoint and, at the same time, a material with many technological uses. Carbon-based materials, diamond, graphite and their many deriva tives, have attracted much attention in recent years for many reasons. Ion implantation, which has proven to be most useful in modifying the near surface properties of many kinds of materials, in particular semiconductors, has also been applied to carbon-based materials. This has yielded, mainly in the last decade, many scientifically interesting and technologically impor tant results. Reports on these studies have been published in a wide variety of journals and topical conferences, which often have little disciplinary overlap, and which often address very different audiences. The need for a review to cover in an integrated way the various diverse aspects of the field has become increasingly obvious. Such a review should allow the reader to get an overview of the research that has been done thus far, to gain an ap preciation of the common features in the response of the various carbon to ion impact, and to become aware of current research oppor allotropes tunities and unresolved questions waiting to be addressed. Realizing this, and having ourselves both contributed to the field, we decided to write a review paper summarizing the experimental and theoretical status of ion implantation into diamond, graphite and related materials.

American Doctoral Dissertations

Download American Doctoral Dissertations PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 848 pages
Book Rating : 4.F/5 ( download)

Book Synopsis American Doctoral Dissertations by :

Download or read book American Doctoral Dissertations written by and published by . This book was released on 1999 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electrical & Electronics Abstracts

Download Electrical & Electronics Abstracts PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 1860 pages
Book Rating : 4.3/5 (243 download)

Book Synopsis Electrical & Electronics Abstracts by :

Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1860 pages. Available in PDF, EPUB and Kindle. Book excerpt:

A Study of Implantation and Irradiation Induced Deep-Level Defects in 6h-Sic

Download A Study of Implantation and Irradiation Induced Deep-Level Defects in 6h-Sic PDF Online Free

Author : Min Gong
Publisher : Open Dissertation Press
ISBN 13 : 9781374703025
Total Pages : pages
Book Rating : 4.7/5 (3 download)

Book Synopsis A Study of Implantation and Irradiation Induced Deep-Level Defects in 6h-Sic by : Min Gong

Download or read book A Study of Implantation and Irradiation Induced Deep-Level Defects in 6h-Sic written by Min Gong and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "A Study of Implantation and Irradiation Induced Deep-level Defects in 6H-SiC" by Min, Gong, 龔敏, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3123849 Subjects: Ion implantation Electron beams Irradiation Silicon carbide

Ceramic Abstracts

Download Ceramic Abstracts PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 252 pages
Book Rating : 4.3/5 (91 download)

Book Synopsis Ceramic Abstracts by :

Download or read book Ceramic Abstracts written by and published by . This book was released on 1998 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt:

International Aerospace Abstracts

Download International Aerospace Abstracts PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 920 pages
Book Rating : 4.F/5 ( download)

Book Synopsis International Aerospace Abstracts by :

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 920 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fundamentals of Silicon Carbide Technology

Download Fundamentals of Silicon Carbide Technology PDF Online Free

Author : Tsunenobu Kimoto
Publisher : John Wiley & Sons
ISBN 13 : 1118313526
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)

Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Characterization of Electrical Properties of 4H-SiC by Imaging Techniques

Download Characterization of Electrical Properties of 4H-SiC by Imaging Techniques PDF Online Free

Author : John Österman
Publisher :
ISBN 13 :
Total Pages : 42 pages
Book Rating : 4.:/5 (186 download)

Book Synopsis Characterization of Electrical Properties of 4H-SiC by Imaging Techniques by : John Österman

Download or read book Characterization of Electrical Properties of 4H-SiC by Imaging Techniques written by John Österman and published by . This book was released on 2004 with total page 42 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Defect Characterization After Si and C Implantation in 4H-SiC.

Download Defect Characterization After Si and C Implantation in 4H-SiC. PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 37 pages
Book Rating : 4.:/5 (958 download)

Book Synopsis Defect Characterization After Si and C Implantation in 4H-SiC. by :

Download or read book Defect Characterization After Si and C Implantation in 4H-SiC. written by and published by . This book was released on 2011 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt: