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Effects Of Silicides And Device Structure On The Characteristics And Circuit Performance Of Poly Silicon Thin Film Transistors For Active Matrix Liquid Crystal Displays
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Book Synopsis Effects of Silicides and Device Structure on the Characteristics and Circuit Performance of Poly-silicon Thin Film Transistors for Active-matrix Liquid-crystal Displays by : Greg Sarcona
Download or read book Effects of Silicides and Device Structure on the Characteristics and Circuit Performance of Poly-silicon Thin Film Transistors for Active-matrix Liquid-crystal Displays written by Greg Sarcona and published by . This book was released on 1996 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1995 with total page 896 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Morphological and Electrical Variance in Polysilicon Thin Film Transistors Crystallized by Flash Lamp Annealing by : Glenn Packard
Download or read book Morphological and Electrical Variance in Polysilicon Thin Film Transistors Crystallized by Flash Lamp Annealing written by Glenn Packard and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This work is a wide-reaching study of the factors that impact the in-situ crystallization of thin films of amorphous silicon into low-temperature polycrystalline silicon (LTPS) by flash lamp annealing (FLA) on glass substrates, which is used to develop thin film transistors (TFTs) with an eye towards display applications. The body of research surrounding FLA LTPS is thus advanced by identifying several challenges towards industrial integration and exploring solutions involving device configuration, novel methods of dopant introduction and activation, and novel TFT material systems. It is unlikely that FLA will ever produce LTPS superior to the laser-annealing techniques currently dominating the market, but its significant improvements in throughput and roll-to-roll compatibility make it an attractive complementary technology. In this work, existing FLA LTPS TFT research is expanded into complementary metal-oxide-semiconductor (CMOS) logic to take advantage of the n- and p- channel compatibility of LTPS over competing amorphous oxide technology. A processing alternative is developed for scaling these devices down to current dimensions of liquid crystal display (LCD) transistor backplanes and then further improved by exploring a silicon ion self-implant to preamorphize the polycrystalline lattice structure, allowing enhanced dopant activation at temperatures compatible with thermally-fragile substrates. This method is also shown to be compatible with a self-aligned device configuration for ease of processing and reduced parasitic capacitance. Additionally, a new strategy for producing bottom-gate LTPS devices (a consistent challenge for laser-annealed LTPS) is presented by incorporating a transparent conductive oxide as a gate structure. The increased thermal mass provided by the bottom gate is harnessed to improve the impact of channel crystallization at lower pulse intensity, producing devices with extremely high channel mobility at low drain voltage. Monolayer Doping (MLD) is demonstrated to be compatible with FLA LTPS, utilizing a simultaneous anneal to both crystallize amorphous silicon and activate selectively self-assembled MLD-adhered dopants. MLD phosphorus n-channel TFTs are presented with activation on par with that of ultra-shallow MLD junctions on bulk silicon. Further, Gallium MLD is demonstrated for the first time, successfully producing p-channel TFTs with FLA. The material system of FLA-crystallized silicon on chromium, already well established in the micrometer-thick film range for PV applications, is given an in-depth investigation in the nanometer thin film range for TFT applications. A unique set of crystallization patterns and texture on the nanometer scale is revealed and characterized to determine the extent, cause, and impact of chromium redistribution in this material, which is also explored as a predictable and edge-directed morphology of FLA LTPS for a wide variety of device configurations. Finally, the individual advancements in this work are explored in many combinations in a wide multi-process study to determine their efficacy as techniques for producing FLA LTPS TFTs. Using this broad information, the field of flash-lamp crystallized TFTs is advanced and several challenges are more specifically identified as a foundation for future research."--Abstract.
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Polycrystalline Silicon for Integrated Circuit Applications by : Ted Kamins
Download or read book Polycrystalline Silicon for Integrated Circuit Applications written by Ted Kamins and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor mance. As device performance improves, however, some of the proper ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili con also need to be better understood to minimize potential degradation of circuit behavior.
Book Synopsis Polysilicon Thin-film-transistor Liquid-crystal-display Peripheral Circuits by : Myunghee Lee
Download or read book Polysilicon Thin-film-transistor Liquid-crystal-display Peripheral Circuits written by Myunghee Lee and published by . This book was released on 1990 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicide/silicon Heterointerfaces, Reaction Kinetics and Ultra-short Channel Devices by : Wei Tang
Download or read book Silicide/silicon Heterointerfaces, Reaction Kinetics and Ultra-short Channel Devices written by Wei Tang and published by . This book was released on 2012 with total page 103 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nickel silicide is one of the electrical contact materials widely used on very large scale integration (VLSI) of Si devices in microelectronic industry. This is because the silicide/silicon interface can be formed in a highly controlled manner to ensure reproducibility of optimal structural and electrical properties of the metal-Si contacts. These advantages can be inherited to Si nanowire (NW) field-effect transistors (FET) device. Due to the technological importance of nickel silicides, fundamental materials science of nickel silicides formation (Ni-Si reaction), especially in nanoscale, has raised wide interest and stimulate new insights and understandings. In this dissertation, in-situ transmission electron microscopy (TEM) in combination with FET device characterization will be demonstrated as useful tools in nano-device fabrication as well as in gaining insights into the process of nickel silicide formation. The shortest transistor channel length (17 nm) fabricated on a vapor-liquid-solid (VLS) grown silicon nanowire (NW) has been demonstrated by controlled reaction with Ni leads on an in-situ transmission electron microscope (TEM) heating stage at a moderate temperature of 400 ðC. NiSi2 is the leading phase, and the silicide-silicon interface is an atomically sharp type-A interface. At such channel lengths, high maximum on-currents of 890 (uA/um) and a maximum transconductance of 430 ([mu]S/[mu]m) were obtained, which pushes forward the performance of bottom-up Si NW Schottky barrier field-effect transistors (SB-FETs). Through accurate control over the silicidation reaction, we provide a systematic study of channel length dependent carrier transport in a large number of SB-FETs with channel lengths in the range of (17 nm - 3.6 [mu]m). Our device results corroborate with our transport simulations and reveal a characteristic type of short channel effects in SB-FETs, both in on- and off-state, which is different from that in conventional MOSFETs, and that limits transport parameter extraction from SB-FETs using the conventional field-effect transconductance measurements. In addition to application of silicide in Si NW devices, the fundamental materials science of Ni-Si reaction is also of interest, and in-situ TEM has been shown to be a useful tool in obtaining dynamical phase transformation information and therefore providing insights into the new phase formation process. By using in-situ TEM techniques, a new gold catalyzed solid-liquid-solid (SLS) silicide phase growth mechanism in Si NWs is observed for the first time, which shows the liquid mediating growth can be also used in synthesis of metallic silicide nanowires. SLS is analogous to the VLS in both being liquid-mediated, but is fundamentally different in terms of nucleation and mass transport. In our SLS growth at 700 ðC, the Ni atoms are supplied from remote Ni particles by interstitial diffusion through Si NW into the pre-existing Au particle at the tip. Upon supersaturation of both Ni and Si in Au, octahedral shape of Ni disilicide phase nucleates in the middle of the Au liquid alloy, which thereafter sweeps through the Si NW and transform Si into NiSi2. Dissolution of Si by Au(Si, Ni) liquid mediating layer and growth of NiSi2 are shown to proceed in different manners. Using in-situ TEM technique, we also have the chance to present direct evidence that Si (111) twin boundaries and Si grain boundaries on Si NW surface can be efficient heterogeneous nucleation site for the silicide growth. By analyzing the nucleation site favorability, unlike other typical FCC materials like Cu or Si, we infer (111) twin defects in NiSi2 may have high interfacial energy. These results may provide valuable insights into the MOSFET source/drain (S/D) contact silicide formation process when defects are either unintentionally formed during the process or intentionally introduced to engineering the strain along the channel.
Book Synopsis Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2007: by : Virginia Chu
Download or read book Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2007: written by Virginia Chu and published by Cambridge University Press. This book was released on 2014-06-05 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin films of amorphous nano-, micro- and polycrystalline silicon, and related alloys, are used in active-matrix liquid crystal displays, solar cells, digital imagers and scanners. These products make large-area electronics the fastest growing semiconductor technology today and are encouraging further research on materials and devices. The success of amorphous silicon and polysilicon materials in commercial products is the driving force for the topic being one of the longest-running symposia and proceedings series of the Materials Research Society, providing excellent forums for reporting research results, exchanging ideas, and discussing scientific and technological issues. This volume, the most recent in the series, focuses on: defects and metastability; solar cells; alloys; crystallization and crystallization techniques; micro- and nanocrystalline silicon; thin-film growth; flexible substrates; novel applications; thin-film transistors; imagers and sensors; electronics and flexible substrates; electronic properties and metastability; structural properties; and nanocrystals, nanoclusters and nanowires.
Download or read book Conference Papers Index written by and published by . This book was released on 1987 with total page 950 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Polymer-dispersed Liquid Crystal Applied in Active-matrix Thin-film Transistor Transparent Liquid Crystal Display by : 蘇峻緯
Download or read book Polymer-dispersed Liquid Crystal Applied in Active-matrix Thin-film Transistor Transparent Liquid Crystal Display written by 蘇峻緯 and published by . This book was released on 2021 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Introduction to Thin Film Transistors by : S.D. Brotherton
Download or read book Introduction to Thin Film Transistors written by S.D. Brotherton and published by Springer Science & Business Media. This book was released on 2013-04-16 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.
Download or read book Ceramic Abstracts written by and published by . This book was released on 1998 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicides on Silicon by : Albert E. Fischer
Download or read book Silicides on Silicon written by Albert E. Fischer and published by . This book was released on 1988 with total page 95 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Atomic Layer Deposition for Semiconductors by : Cheol Seong Hwang
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Book Synopsis ESD in Silicon Integrated Circuits by : E. Ajith Amerasekera
Download or read book ESD in Silicon Integrated Circuits written by E. Ajith Amerasekera and published by John Wiley & Sons. This book was released on 2002-05-22 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: * Examines the various methods available for circuit protection, including coverage of the newly developed ESD circuit protection schemes for VLSI circuits. * Provides guidance on the implementation of circuit protection measures. * Includes new sections on ESD design rules, layout approaches, package effects, and circuit concepts. * Reviews the new Charged Device Model (CDM) test method and evaluates design requirements necessary for circuit protection.
Download or read book Silicon written by Paul Siffert and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: With topics ranging from epitaxy through lattice defects and doping to quantum computation, this book provides a personalized survey of the development and use of silicon, the basis for the revolutionary changes in our lives sometimes called "The Silicon Age." Beginning with the very first developments more than 50 years ago, this reports on all aspects of silicon and silicon technology up to its use in exciting new technologies, including a glance at possible future developments.
